JP6851239B2 - 樹脂封止型半導体装置およびその製造方法 - Google Patents
樹脂封止型半導体装置およびその製造方法 Download PDFInfo
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- JP6851239B2 JP6851239B2 JP2017065909A JP2017065909A JP6851239B2 JP 6851239 B2 JP6851239 B2 JP 6851239B2 JP 2017065909 A JP2017065909 A JP 2017065909A JP 2017065909 A JP2017065909 A JP 2017065909A JP 6851239 B2 JP6851239 B2 JP 6851239B2
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Description
まず、第一面と前記第一面の反対側の第二面を有する樹脂封止体と、
前記樹脂封止体に埋め込まれた半導体チップと、
前記半導体チップの素子面上に設けられ、前記樹脂封止体に埋め込まれた外部端子と、
を備える樹脂封止型半導体装置であって、
前記外部端子上に設けられた積層膜は、前記第一面に露出し、
前記半導体チップの素子面の反対側の裏面は、前記第二面と同一面を成し、
前記半導体チップの裏面には、前記第二面よりも突出する金属層が設けられていることを特徴とする樹脂封止型半導体装置とした。
前記樹脂封止体に埋め込まれた半導体チップと、
前記半導体チップの素子面上に設けられ、前記樹脂封止体に埋め込まれた外部端子と、
を備える樹脂封止型半導体装置の製造方法であって、
第一主面と前記第一主面と反対側の第二主面とを有する基板を準備する工程と、
前記第一主面に導電層を形成する工程と、
前記半導体チップ上に設けられたバンプ電極と前記導電層を接合して前記外部端子を形成する工程と、
前記外部端子と前記半導体チップを樹脂で被覆して前記第一主面上に樹脂封止体を形成する工程と、
前記樹脂封止体が前記第一主面と接する面と反対側の面から、前記樹脂封止体および前記半導体チップを研削して、前記半導体チップの素子面と反対側の面を露出させる工程と、
前記半導体チップの露出面に金属層を形成する工程と、
前記外部端子と前記樹脂封止体の前記第一面を露出させる工程と、
隣接する前記半導体チップの間を切断して、樹脂封止型半導体装置に個片化する工程と、
を備えることを特徴とする樹脂封止型半導体装置の製造方法とした。
図1は、本発明の第1の実施形態に係る樹脂封止型半導体装置の平面図で、図1(1)は、外部端子の露出面(表面)から見た図であり、図1(2)は、外部端子の露出面と反対側の面(裏面)から透視した図である。
半導体チップ1の表面には複数のパッド電極(図示せず)上に形成されたバンプ電極2が設けられ、バンプ電極2上には半田(図示せず)を介して導電層3がフリップチップ接続されている。そして、半導体チップ1とバンプ電極2と導電層3からなる外部端子9は、樹脂封止体6によって封緘されている。樹脂封止体6は上面と下面を有し、上面側から導電層3、バンプ電極2、半導体チップ1の順に埋め込まれ、半導体チップ1は樹脂封止体6の下面(裏面)側に露出する構成となっている。導電層3がバンプ電極2と接する面と反対側に位置する導電層3の表面と樹脂封止体6の上面は同一面を成し、さらに、導電層3の表面には積層膜5が設けられ、該同一面から幾分突出するように形成されている。ここで、外部端子9は半導体チップ1の素子の外縁よりも内側に配置されているが、これは樹脂封止体6内において、半導体チップ1が外部端子9のアンカーになり、外部端子9が樹脂封止体6から容易に抜けないようにするためである。このように外部端子9の端子強度が確保されることで、樹脂封止型半導体装置100と実装基板との接続信頼性を確保することができる。
半導体チップ1を2つのパワーMOSFETからなる構成とし、半導体チップ1の厚さが50μm厚になるように設定してある。半導体チップ1の素子面側の各々の端子の上に50μm厚の銅の柱状バンプ電極2が形成され、半田(図示せず)を介して50μm厚の銅の柱状バンプ電極2と50μm厚の銅の柱状導電層3がフリップチップ接続されている。半導体チップ1、柱状バンプ電極2、柱状導電層3および半田が、導電層3の表面および反対側の半導体チップ1の裏面を除いて、エポキシタイプの樹脂封止体6で封緘される。樹脂封止体6から露出した半導体チップ1の素子面と反対側の面である半導体チップ1の裏面には、30μm厚さの銅の金属層4を設け、電気的に接続されている。この金属層4は2つのパワーMOSFETのドレイン側の共通電極として機能し、オン抵抗を下げるために30μm以上という厚膜に形成されるのが好ましい。そして、樹脂封止体6の下面から露出する金属層4の表面は積層膜5によって覆われている。積層膜5は半導体チップ1装置の裏面だけでなく、表面の外部端子9の表面にも形成されるが、この積層膜5は金属層4側および外部端子9側からニッケル/パラジウム/金の順に被着される構成である。積層膜5はニッケル/パラジウム/金に代えて、クロム/ニッケル/金、チタン/ニッケル/銅、チタン/ニッケル/金、チタン/ニッケル/銀という順に被着した積層構造でも構わない。
本発明の第1の実施形態に係る樹脂封止型半導体装置100との違いは、樹脂封止型半導体装置100の裏面全面に金属層4および積層膜5を設け、樹脂封止体6の外縁と金属層4の外縁を同一とし、平面視的に樹脂封止体6と金属層4を同じ大きさとした点である。第1の実施形態の場合は金属層4を所定の形状にパターニングする必要があったが、このような構成とすることでパターニングの必要がなくなり、工程を削減できるという効果がある。また、ここでは、外部端子9は半導体チップ1の外縁よりも内側に配置するようにされていることに加え、金属層4が半導体チップ1の外縁よりも張り出して樹脂封止体6の裏面と接触する構成となっている。このため、樹脂封止体6内において、半導体チップ1が外部端子9のアンカーになるだけでなく、金属層4もアンカーとなり、外部端子9が、樹脂封止体6から容易に抜けないようになる。外部端子3の端子強度が確保されることで、樹脂封止型半導体装置100と実装基板との接続信頼性を確保することができる。
本発明の第1の実施形態に係る樹脂封止型半導体装置100との違いは、積層膜5側面の外縁が樹脂封止体6に埋め込まれ、積層膜5の表面と樹脂封止体6の上面とが一つの平面を形成し、該平面に積層膜5が露出している点である。積層膜5が樹脂封止体6に埋め込まれながらも表面のみが露出する構成とすることで、第1の実施形態に係る樹脂封止型半導体装置100のような積層膜5が樹脂封止体6よりも突出するものに比べ、実装基板に実装したときに接合面積を幾分小さくできるという効果がある。また、樹脂封止体6の下面から露出する金属層4の表面は積層膜5によって覆われていない点も異なる。金属層4を覆う積層膜5は金属層4の保護膜としての役目を有するが、この樹脂封止型半導体装置100を実装基板へ実装する際に金属層4裏面が封止されれば何ら問題はない。
本発明の第2の実施形態に係る樹脂封止型半導体装置100との違いは、積層膜5側面の外縁が樹脂封止体6に埋め込まれ、積層膜5表面と樹脂封止体6上面とが一つの平面を形成し、該平面に積層膜5が露出している点である。積層膜5が樹脂封止体6に埋め込まれながらも表面のみが露出する構成とすることで、第1の実施形態に係る樹脂封止型半導体装置100のような積層膜5が樹脂封止体6よりも突出するものに比べ、実装基板に実装したときに接合面積を幾分小さくできるという効果がある。また、樹脂封止体6の下面よりも突出する金属層4の表面は積層膜5によって覆われていない点も異なる。金属層4を覆う積層膜5は金属層4の保護膜としての役目を有するが、この樹脂封止型半導体装置100を実装基板へ実装する際に金属層4の裏面が封止されれば何ら問題はない。
本発明の第1の実施形態に係る樹脂封止型半導体装置100との違いは、バンプ電極2と導電層3とを異径とした点である。図2においては、バンプ電極2と導電層3と積層膜5とを同一径で平面視的に重畳するように図示しているが、本構造ではバンプ電極2の外径を導電層3の外径よりも小さくしている。第1の実施形態の場合は、外部端子9は半導体チップ1の外周よりも内側に配置するようにされていることで樹脂封止体6内において、半導体チップ1が外部端子9のアンカーになり、図の上方向に外部端子9が樹脂封止体6から容易に抜けないようになっているが、本実施形態の場合は、バンプ電極2と導電層3とが平面視的に部分的に重畳し、かつバンプ電極2の断面積(外径)を導電層3の断面積(外径)よりも小さくしているため、図の下方向にも半導体チップ1が樹脂封止体6から容易に抜けないようになっている。このため、半導体チップ1のバンプ電極2や導電層3と樹脂封止体6との密着が強固なものとなり、樹脂封止体6によって十分にサポートされるので、樹脂封止型半導体装置100の反りが抑制され、ハンドリング性が向上するとともに、表面の平坦性が維持されるため、複数の外部端子9上の積層膜5の高さ均一性(コプラナリティ)が改善され、実装基板への実装品質を高めることができる。
図7(1)に示すとおり、まず、基板7を準備する。基板7は、長さ250mm、幅80mm、厚さ250μmの鉄系の鋼板とした。他の基板材料として銅をベースにした合金素材、または、ニッケルをベースにした合金素材、さらには、絶縁体であるセラミクスあるいは繊維強化プラスチック(FRP)の板を利用しても良い。図7(2)に示すとおり、基板7の一方の主面に、電解または無電解メッキ法で厚さ50μmの銅の柱状導電層3を形成する。導電層3の材質は、はんだ、金、銀、銅、アルミ、パラジウム、ニッケルの単層材料、もしくはこれらの金属を積層した多層材料や合金からなる。
図4および図5に示す樹脂封止型半導体装置100では、外部端子9上の積層膜5が樹脂封止体6に埋め込まれ、積層膜5の表面だけが露出して樹脂封止体6の表面と同一面を形成しているが、これを製造するためには図7(2)に示す工程に代えて、図10に示すような工程とすれば良い。基板7の一方の主面に、電解または無電解メッキ法で積層膜5と柱状導電層3とを連続して形成することで図4および図5に示すような外部端子9上の積層膜5が樹脂封止体6に埋め込まれた樹脂封止型半導体装置とすることができる。このようにすることで図9(1)に示す工程を削除することができる。本発明の第4の実施形態に係る樹脂封止型半導体装置の製造方法についても同様である。
2 バンプ電極
3 導電層
4 金属層
5 積層膜
6 樹脂封止体
7 基板
8 ダイシングエリア
9 外部端子
20 ソースバンプ電極
21 ゲートバンプ電極
22 ドレインバンプ電極
24 金属層
25 半導体チップ
100 樹脂封止型半導体装置
200 半導体装置
Claims (11)
- 第一面と前記第一面の反対側の第二面を有する樹脂封止体と、
前記樹脂封止体に埋め込まれた半導体チップと、
前記半導体チップの素子面上に設けられ、前記樹脂封止体に埋め込まれた外部端子と、
を備える樹脂封止型半導体装置であって、
前記外部端子上に設けられた第一積層膜は、前記第一面に露出し、
前記半導体チップの素子面の反対側の裏面は、前記第二面と同一面を成し、
同一面を成す前記第二面および前記半導体チップの裏面の全域には金属層が設けられ、
前記金属層の表面全域に第二積層膜が形成されていることを特徴とする樹脂封止型半導体装置。 - 前記第一積層膜の表面が前記第一面と同一面を成すことを特徴とする請求項1に記載の樹脂封止型半導体装置。
- 前記外部端子の表面が前記第一面と同一面を成し、前記第一積層膜が前記第一面よりも突出していることを特徴とする請求項1に記載の樹脂封止型半導体装置。
- 前記外部端子は、バンプ電極および前記バンプ電極上に設けられた導電層を備えることを特徴とする請求項1から3のいずれか1項に記載の樹脂封止型半導体装置。
- 平面視的に前記バンプ電極の断面積が前記導電層の断面積よりも小さいことを特徴とする請求項4に記載の樹脂封止型半導体装置。
- 第一面と前記第一面の反対側の第二面を有する樹脂封止体と、
前記樹脂封止体に埋め込まれた半導体チップと、
前記半導体チップの素子面上に設けられ、前記樹脂封止体に埋め込まれた外部端子と、
を備える樹脂封止型半導体装置の製造方法であって、
第一主面と前記第一主面と反対側の第二主面とを有する基板を準備する工程と、
前記第一主面に導電層を形成する工程と、
前記半導体チップ上に設けられたバンプ電極と前記導電層を接合して前記外部端子を形成する工程と、
前記外部端子と前記半導体チップを樹脂で被覆して前記第一主面上に樹脂封止体を形成する工程と、
前記樹脂封止体が前記第一主面と接する面と反対側の面から、前記樹脂封止体および前記半導体チップを研削して、前記半導体チップの素子面と反対側の面を露出させる工程と、
同一面を成す前記第二面および前記半導体チップの露出面の全域に金属層を形成する工程と、
前記金属層の表面全域に第二積層膜を形成する工程と、
前記外部端子と前記樹脂封止体の前記第一面を露出させる工程と、
隣接する前記半導体チップの間を切断して、樹脂封止型半導体装置に個片化する工程と、
を備えることを特徴とする樹脂封止型半導体装置の製造方法。 - 前記半導体チップの素子面と反対側の面を露出させる工程において、前記樹脂封止体および前記半導体チップを研削した後に化学機械研磨(CMP)処理することを特徴とする請求項6に記載の樹脂封止型半導体装置の製造方法。
- 前記隣接する半導体チップの間を切断して、樹脂封止型半導体装置に個片化する工程が、ダイシング法またはブレーキング法であることを特徴とする請求項6又7に記載の樹脂封止型半導体装置の製造方法。
- 前記外部端子と前記樹脂封止体の前記第一面を露出させる工程が、前記基板全てを除去する工程であることを特徴とする請求項6から8のいずれか1項に記載の樹脂封止型半導体装置の製造方法。
- 前記外部端子と前記樹脂封止体の前記第一面を露出させる工程が、前記基板を部分的に除去する工程であることを特徴とする請求項6から8のいずれか1項に記載の樹脂封止型半導体装置の製造方法。
- 前記外部端子と前記樹脂封止体の前記第一面を露出させる工程が、前記基板の外周部分以外を開口する工程であることを特徴とする請求項10に記載の樹脂封止型半導体装置の製造方法。
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