KR870009468A - 반도체 장치 - Google Patents
반도체 장치 Download PDFInfo
- Publication number
- KR870009468A KR870009468A KR860009524A KR860009524A KR870009468A KR 870009468 A KR870009468 A KR 870009468A KR 860009524 A KR860009524 A KR 860009524A KR 860009524 A KR860009524 A KR 860009524A KR 870009468 A KR870009468 A KR 870009468A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor devices
- ultraviolet
- semiconductor
- semiconductor chip
- resin
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 230000002000 scavenging effect Effects 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/18—Circuits for erasing optically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Semiconductor Memories (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이 발명의 한 실시예에 의한 반도체 장치를 표시한 단면도.
제2도는 다른 실시예 장치를 표시하는 단면도.
제3도는 종래의 반복 소거 가능형의 자외선 소지형 반도체 장치의 조립단면도.
Claims (1)
- 자외선 소기형 반도체 기억장치를 탑제시킨 반도체 칩을 수지 밀봉하여서 되는 반도체 장치에 있어서 상기 반도체 칩의 와이어본딩용 전극부를 제외한 표면의 일부 또는 전부가 자외선 투과형 수지로 피복된 것을 특징으로 하는 반도체 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5746886A JPH0783075B2 (ja) | 1986-03-14 | 1986-03-14 | 半導体装置の製造方法 |
JP57468 | 1986-03-14 | ||
JP61-57468 | 1986-03-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR870009468A true KR870009468A (ko) | 1987-10-27 |
KR900007758B1 KR900007758B1 (ko) | 1990-10-19 |
Family
ID=13056518
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019860009524A KR900007758B1 (ko) | 1986-03-14 | 1986-11-12 | 반도체 장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4853761A (ko) |
JP (1) | JPH0783075B2 (ko) |
KR (1) | KR900007758B1 (ko) |
DE (1) | DE3708251A1 (ko) |
GB (1) | GB2189646B (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5045918A (en) * | 1986-12-19 | 1991-09-03 | North American Philips Corp. | Semiconductor device with reduced packaging stress |
US5171716A (en) * | 1986-12-19 | 1992-12-15 | North American Philips Corp. | Method of manufacturing semiconductor device with reduced packaging stress |
JPH02105418A (ja) * | 1988-10-14 | 1990-04-18 | Mitsubishi Electric Corp | 樹脂封止型半導体装置 |
JPH04261049A (ja) * | 1991-01-31 | 1992-09-17 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP5147249B2 (ja) * | 2007-01-31 | 2013-02-20 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置の製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3622419A (en) * | 1969-10-08 | 1971-11-23 | Motorola Inc | Method of packaging an optoelectrical device |
US4001872A (en) * | 1973-09-28 | 1977-01-04 | Rca Corporation | High-reliability plastic-packaged semiconductor device |
JPS55156343A (en) * | 1979-05-25 | 1980-12-05 | Hitachi Ltd | Manufacture of semiconductor device |
JPS56137658A (en) * | 1980-03-31 | 1981-10-27 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor device |
JPS5763831A (en) * | 1980-10-06 | 1982-04-17 | Nec Corp | Semiconductor device |
DE3125284A1 (de) * | 1981-06-26 | 1983-01-13 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von bauelementen aus halbleiterscheiben |
US4460915A (en) * | 1981-12-28 | 1984-07-17 | Intel Corporation | Plastic package for radiation sensitive semiconductor devices |
JPS58126645A (ja) * | 1982-01-22 | 1983-07-28 | Toshiba Corp | 偏向ヨ−ク装置 |
US4574465A (en) * | 1982-04-13 | 1986-03-11 | Texas Instruments Incorporated | Differing field oxide thicknesses in dynamic memory device |
JPS58182837A (ja) * | 1982-04-21 | 1983-10-25 | Hitachi Ltd | 樹脂封止半導体装置の製造方法 |
JPS59110174A (ja) * | 1982-12-15 | 1984-06-26 | Hitachi Ltd | 固体撮像装置 |
JPS6083338A (ja) * | 1983-10-14 | 1985-05-11 | Oki Electric Ind Co Ltd | Eprom装置の製造方法 |
JPS6083337A (ja) * | 1983-10-14 | 1985-05-11 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS6083351A (ja) * | 1983-10-14 | 1985-05-11 | Oki Electric Ind Co Ltd | Eprom装置 |
-
1986
- 1986-03-14 JP JP5746886A patent/JPH0783075B2/ja not_active Expired - Lifetime
- 1986-11-12 KR KR1019860009524A patent/KR900007758B1/ko not_active IP Right Cessation
-
1987
- 1987-03-13 GB GB8706061A patent/GB2189646B/en not_active Expired - Fee Related
- 1987-03-13 US US07/025,824 patent/US4853761A/en not_active Expired - Lifetime
- 1987-03-13 DE DE19873708251 patent/DE3708251A1/de active Granted
Also Published As
Publication number | Publication date |
---|---|
GB2189646B (en) | 1990-07-11 |
GB8706061D0 (en) | 1987-04-15 |
KR900007758B1 (ko) | 1990-10-19 |
GB2189646A (en) | 1987-10-28 |
US4853761A (en) | 1989-08-01 |
JPS62214649A (ja) | 1987-09-21 |
JPH0783075B2 (ja) | 1995-09-06 |
DE3708251A1 (de) | 1987-09-17 |
DE3708251C2 (ko) | 1992-06-04 |
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Legal Events
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20061011 Year of fee payment: 17 |
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EXPY | Expiration of term |