KR910001924A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR910001924A
KR910001924A KR1019900009536A KR900009536A KR910001924A KR 910001924 A KR910001924 A KR 910001924A KR 1019900009536 A KR1019900009536 A KR 1019900009536A KR 900009536 A KR900009536 A KR 900009536A KR 910001924 A KR910001924 A KR 910001924A
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KR
South Korea
Prior art keywords
semiconductor devices
film
semiconductor substrate
insulating oxide
oxide film
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KR1019900009536A
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English (en)
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KR930011456B1 (ko
Inventor
다카아키 오노
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
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Publication of KR910001924A publication Critical patent/KR910001924A/ko
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Publication of KR930011456B1 publication Critical patent/KR930011456B1/ko

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용 없음

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일 실시예에 관계한 반도제장치를 나타낸 단면도.
제2도는 상기 제1도의 반도제장치를 사용하여 동계(銅系) 와이어(wire)를 본딩했을 때의 반도체칩을 나타낸 단면도.

Claims (1)

  1. 반도체소자(13)의 전극을 금속막(15)에 의해 끄집어내고, 이 금속막(15)으로 본딩패드를 형성하는 반도체 장치에 있어서, 반도체기판(11)과, 이 반도체기판(11) 위에 형성되는 절연산화막(12), 이 절연산화막(12)위에 형성되며 상기 절연산화막(12)보다도 딱딱한 질소 또는 탄소를 포함하는 규소화합물로 이루어진 막(20), 이 규소화합물로 이루어진 막(20) 위에 형성되며 상기 금속막으로 이루어진 본딩패드(15)를 구비하여 구성된 것을 특징으로 하는 반도제장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900009536A 1989-06-27 1990-06-27 반도체장치 KR930011456B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1-164533 1989-06-27
JP1164533A JPH0682704B2 (ja) 1989-06-27 1989-06-27 半導体装置
JP89-164533 1989-06-27

Publications (2)

Publication Number Publication Date
KR910001924A true KR910001924A (ko) 1991-01-31
KR930011456B1 KR930011456B1 (ko) 1993-12-08

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Application Number Title Priority Date Filing Date
KR1019900009536A KR930011456B1 (ko) 1989-06-27 1990-06-27 반도체장치

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Country Link
EP (1) EP0405501B1 (ko)
JP (1) JPH0682704B2 (ko)
KR (1) KR930011456B1 (ko)
DE (1) DE69034071T2 (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW318321B (ko) 1995-07-14 1997-10-21 Matsushita Electric Ind Co Ltd
US6875687B1 (en) 1999-10-18 2005-04-05 Applied Materials, Inc. Capping layer for extreme low dielectric constant films
EP1094506A3 (en) * 1999-10-18 2004-03-03 Applied Materials, Inc. Capping layer for extreme low dielectric constant films
US7612457B2 (en) 2007-06-21 2009-11-03 Infineon Technologies Ag Semiconductor device including a stress buffer

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JPS57113235A (en) * 1980-12-29 1982-07-14 Nec Corp Semiconductor device
JPS5886733A (ja) * 1981-11-18 1983-05-24 Nec Corp 半導体装置
JPS6031243A (ja) * 1983-08-01 1985-02-18 Nec Corp 半導体装置
JPS61196552A (ja) * 1985-02-26 1986-08-30 Nec Corp 半導体集積回路装置
JPS6218060A (ja) * 1985-07-16 1987-01-27 Nec Corp 半導体装置
JPS6232617A (ja) * 1985-08-02 1987-02-12 Matsushita Electronics Corp 半導体装置およびその製造方法
US4949150A (en) * 1986-04-17 1990-08-14 Exar Corporation Programmable bonding pad with sandwiched silicon oxide and silicon nitride layers
JPS63148646A (ja) * 1986-12-12 1988-06-21 Toshiba Corp 半導体装置
JPS6484724A (en) * 1987-09-28 1989-03-30 Nec Corp Semiconductor device

Also Published As

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EP0405501A2 (en) 1991-01-02
EP0405501B1 (en) 2003-05-14
KR930011456B1 (ko) 1993-12-08
EP0405501A3 (en) 1991-07-24
JPH0330347A (ja) 1991-02-08
DE69034071D1 (de) 2003-06-18
DE69034071T2 (de) 2004-01-08
JPH0682704B2 (ja) 1994-10-19

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