KR920020658A - 반도체 장치의 칩 본딩 방법 - Google Patents

반도체 장치의 칩 본딩 방법 Download PDF

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Publication number
KR920020658A
KR920020658A KR1019910006053A KR910006053A KR920020658A KR 920020658 A KR920020658 A KR 920020658A KR 1019910006053 A KR1019910006053 A KR 1019910006053A KR 910006053 A KR910006053 A KR 910006053A KR 920020658 A KR920020658 A KR 920020658A
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South Korea
Prior art keywords
ball
bonding
bonding method
semiconductor device
chip bonding
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KR1019910006053A
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English (en)
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KR940001149B1 (ko
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김구성
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김광호
삼성전자 주식회사
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Priority to KR1019910006053A priority Critical patent/KR940001149B1/ko
Priority to US07/756,911 priority patent/US5186381A/en
Priority to JP3233342A priority patent/JPH0758722B2/ja
Priority to DE4131413A priority patent/DE4131413C2/de
Publication of KR920020658A publication Critical patent/KR920020658A/ko
Application granted granted Critical
Publication of KR940001149B1 publication Critical patent/KR940001149B1/ko

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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
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Abstract

내용 없음

Description

반도체 장치의 칩 본딩 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 이 발명에 따른 칩 본딩방법을 나타낸 도면.

Claims (2)

  1. 칩의 진극상에 와이어 볼 본딩장비로서 Au와이어 볼 본딩을 실시하여 제1Au볼을 형성하는 단계와. 상기 제1Au볼상에 Au와이어 볼 본딩을 재차 실시하여 또다른 제2Au볼을 적층시키는 단계와, 상기 제2Au볼 상에 와이어 볼 본딩장비로서 Pb와이어 볼 본딩을 실시하여 Pb볼을 형성하는 단계와, 상기 Pb볼에 열을 가해 Pb볼을 녹이면서 칩을 기판상에 부착시켜 칩본딩하는 단계로 이루어지는 반도체 장치의 칩 본딩방법.
  2. 제1항에 있어서, 상기 Pb볼 형성은, H2또는 Ar+H2분위기하에서 형성되는 반도체 장치의 칩 본딩방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910006053A 1991-04-16 1991-04-16 반도체 장치의 칩 본딩 방법 KR940001149B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019910006053A KR940001149B1 (ko) 1991-04-16 1991-04-16 반도체 장치의 칩 본딩 방법
US07/756,911 US5186381A (en) 1991-04-16 1991-09-09 Semiconductor chip bonding process
JP3233342A JPH0758722B2 (ja) 1991-04-16 1991-09-12 半導体装置のチップボンディング方法
DE4131413A DE4131413C2 (de) 1991-04-16 1991-09-20 Bondierungsverfahren für Halbleiterchips

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Application Number Priority Date Filing Date Title
KR1019910006053A KR940001149B1 (ko) 1991-04-16 1991-04-16 반도체 장치의 칩 본딩 방법

Publications (2)

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KR920020658A true KR920020658A (ko) 1992-11-21
KR940001149B1 KR940001149B1 (ko) 1994-02-14

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DE4131413A1 (de) 1992-10-22
JPH04326534A (ja) 1992-11-16
KR940001149B1 (ko) 1994-02-14
JPH0758722B2 (ja) 1995-06-21
DE4131413C2 (de) 1999-07-29
US5186381A (en) 1993-02-16

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