KR920010803A - 와이어본딩방식 반도체장치 - Google Patents

와이어본딩방식 반도체장치 Download PDF

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Publication number
KR920010803A
KR920010803A KR1019910021071A KR910021071A KR920010803A KR 920010803 A KR920010803 A KR 920010803A KR 1019910021071 A KR1019910021071 A KR 1019910021071A KR 910021071 A KR910021071 A KR 910021071A KR 920010803 A KR920010803 A KR 920010803A
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KR
South Korea
Prior art keywords
semiconductor device
wire bonding
pad electrode
bonding semiconductor
corner portions
Prior art date
Application number
KR1019910021071A
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English (en)
Inventor
미츠유키 구니에다
이쿠오 츠치야
준코 마루야마
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
다케다이 마사다카
도시바 마이크로 일렉트로닉스 가부시키가이샤
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Application filed by 아오이 죠이치, 가부시키가이샤 도시바, 다케다이 마사다카, 도시바 마이크로 일렉트로닉스 가부시키가이샤 filed Critical 아오이 죠이치
Publication of KR920010803A publication Critical patent/KR920010803A/ko

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    • H—ELECTRICITY
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    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Abstract

내용 없음

Description

와이어본딩방식 반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 따른 와이어본딩방식 반도체장치의 평면도,
제2도는 제1도의 주요부분을 나타낸 도면.

Claims (1)

  1. 반도체칩(100)상이 본딩패드전극(102)과 리드프레임의 내부리드부(106)를 금속세선(104)으로 결선하는 와이어본딩방식 반도체장치에 있어서, 상기 패드전극(102) 또는 패드전극(102)상의 보호막개구부가 갖는 각부중, 상기 칩(100)단면에 부착된 각부의 적어도 1개가 둔각인 것을 특징으로 하는 와이어본딩방식 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019910021071A 1990-11-29 1991-11-25 와이어본딩방식 반도체장치 KR920010803A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2333073A JP2768822B2 (ja) 1990-11-29 1990-11-29 ワイヤボンディグ方式半導体装置
JP90-333073 1990-11-29

Publications (1)

Publication Number Publication Date
KR920010803A true KR920010803A (ko) 1992-06-27

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ID=18261964

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910021071A KR920010803A (ko) 1990-11-29 1991-11-25 와이어본딩방식 반도체장치

Country Status (3)

Country Link
EP (1) EP0488186A1 (ko)
JP (1) JP2768822B2 (ko)
KR (1) KR920010803A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100334053B1 (ko) * 1999-11-05 2002-04-25 신원식 폐수 처리제 및 그 제조방법

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5309025A (en) * 1992-07-27 1994-05-03 Sgs-Thomson Microelectronics, Inc. Semiconductor bond pad structure and method
JP3022819B2 (ja) * 1997-08-27 2000-03-21 日本電気アイシーマイコンシステム株式会社 半導体集積回路装置
KR100443121B1 (ko) 2001-11-29 2004-08-04 삼성전자주식회사 반도체 공정의 수행 방법 및 반도체 공정 장치
JP3790995B2 (ja) * 2004-01-22 2006-06-28 有限会社ボンドテック 接合方法及びこの方法により作成されるデバイス並びに接合装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5555541A (en) * 1978-10-20 1980-04-23 Hitachi Ltd Semiconductor element
FR2616964B1 (fr) * 1987-06-19 1990-03-02 Thomson Composants Militaires Puce de circuit integre avec plots d'entree-sortie allonges
US4959706A (en) * 1988-05-23 1990-09-25 United Technologies Corporation Integrated circuit having an improved bond pad

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100334053B1 (ko) * 1999-11-05 2002-04-25 신원식 폐수 처리제 및 그 제조방법

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Publication number Publication date
JPH04199721A (ja) 1992-07-20
JP2768822B2 (ja) 1998-06-25
EP0488186A1 (en) 1992-06-03

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