KR970008531A - 반도체 장치의 패드 설계 방법 - Google Patents

반도체 장치의 패드 설계 방법 Download PDF

Info

Publication number
KR970008531A
KR970008531A KR1019950020642A KR19950020642A KR970008531A KR 970008531 A KR970008531 A KR 970008531A KR 1019950020642 A KR1019950020642 A KR 1019950020642A KR 19950020642 A KR19950020642 A KR 19950020642A KR 970008531 A KR970008531 A KR 970008531A
Authority
KR
South Korea
Prior art keywords
slit
semiconductor device
pad
metal wiring
molding compound
Prior art date
Application number
KR1019950020642A
Other languages
English (en)
Other versions
KR0170316B1 (ko
Inventor
김홍범
이성민
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950020642A priority Critical patent/KR0170316B1/ko
Priority to JP15987696A priority patent/JP4095123B2/ja
Priority to US08/679,450 priority patent/US5804883A/en
Publication of KR970008531A publication Critical patent/KR970008531A/ko
Application granted granted Critical
Publication of KR0170316B1 publication Critical patent/KR0170316B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05556—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01011—Sodium [Na]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0504—14th Group
    • H01L2924/05042—Si3N4
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Abstract

슬릿을 구비하는 반도체 장치의 패드에 관해 기재되어 있다. 본딩 패드 및 금속 배선을 덮고 있는 패시베이션층을 포함하는 반도체 장치에서, 상기 금속 배선을 반도체 장치의 외부 리드에 전기적으로 연결하는 본딩 패드상에 슬릿을 형성하는 것을 특징으로 하는 반도체 패드 설계 방법을 제공한다.
따라서, 패드의 가장 자리에 슬릿을 만들어 줄 경우 와이어 본딩에 의해 패드에 가해지는 스트레스는 슬릿에 채워진 몰딩 화합물에 의해 스트레스가 어느 정도 수용될 수 있기 때문에 스트레스에 의해 부식을 억제하여 PCT 신뢰성을 개선할 수 있다.

Description

반도체 장치의 패드 설계 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 의해 슬릿(Slit)을 구비한 패드 평면도들.

Claims (6)

  1. 본딩 패드 및 금속 배선을 덮고 있는 패시베이션 층을 포함하는 반도체 장치에서, 상기 금속 배선을 반도체 장치의 외부 리드에 전기적으로 연결하는 상기 본딩 패드상에 슬릿을 형성하는 것을 특징으로 하는 반도체 패드 설계 방법.
  2. 제1항에 있어서, 상기 슬릿은 패드의 가장자리를 따라 슬릿형태가 곡선인 것을 특징으로 하는 반도체 패드 설계 방법.
  3. 제1항에 있어서, 상기 슬릿의 곡선은 연속적 및 불연속적인 형태중 어느 하나로 형성된 것을 특징으로 하는 반도체 패드 설계 방법.
  4. 제1항에 있어서, 상기 슬릿의 갯수가 1개 및 그 이상인 것을 특징으로 하는 반도체 패드 설계 방법.
  5. 슬릿이 형성된 본딩 패드 및 금속 배선을 덮고 있는 패시베이션층을 포함하는 반도체 장치에서, 상기 슬릿을 채우는 형태로 몰딩 화합물이 형성된 것을 특징으로 하는 반도체 장치의 패드.
  6. 제5항에 있어서, 상기 몰딩화합물은 수지 몰딩 화합물로 구성된 것을 특징으로 하는 반도체 장치의 패드.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950020642A 1995-07-13 1995-07-13 반도체 장치의 패드 설계 방법 KR0170316B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019950020642A KR0170316B1 (ko) 1995-07-13 1995-07-13 반도체 장치의 패드 설계 방법
JP15987696A JP4095123B2 (ja) 1995-07-13 1996-06-20 ボンディングパット及び半導体装置の製造方法
US08/679,450 US5804883A (en) 1995-07-13 1996-07-12 Bonding pad in semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950020642A KR0170316B1 (ko) 1995-07-13 1995-07-13 반도체 장치의 패드 설계 방법

Publications (2)

Publication Number Publication Date
KR970008531A true KR970008531A (ko) 1997-02-24
KR0170316B1 KR0170316B1 (ko) 1999-02-01

Family

ID=19420555

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950020642A KR0170316B1 (ko) 1995-07-13 1995-07-13 반도체 장치의 패드 설계 방법

Country Status (3)

Country Link
US (1) US5804883A (ko)
JP (1) JP4095123B2 (ko)
KR (1) KR0170316B1 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6090696A (en) * 1999-10-20 2000-07-18 Taiwan Semicondutor Manufacturing Company Method to improve the adhesion of a molding compound to a semiconductor chip comprised with copper damascene structures
US6803302B2 (en) * 1999-11-22 2004-10-12 Freescale Semiconductor, Inc. Method for forming a semiconductor device having a mechanically robust pad interface
US20030122258A1 (en) * 2001-12-28 2003-07-03 Sudhakar Bobba Current crowding reduction technique using slots
JP4525143B2 (ja) * 2004-04-02 2010-08-18 パナソニック株式会社 半導体装置
DE112004003008T5 (de) * 2004-10-29 2007-10-25 Spansion Llc, Sunnyvale Halbleiterbauelement und Verfahren zur Herstellung desselben
US20060207790A1 (en) * 2005-03-15 2006-09-21 Jayoung Choi Bonding pads having slotted metal pad and meshed via pattern
JP4533804B2 (ja) * 2005-06-02 2010-09-01 セイコーエプソン株式会社 半導体装置及びその製造方法
JP5452064B2 (ja) * 2009-04-16 2014-03-26 ルネサスエレクトロニクス株式会社 半導体集積回路装置
JP5926988B2 (ja) * 2012-03-08 2016-05-25 ルネサスエレクトロニクス株式会社 半導体装置
US9312193B2 (en) 2012-11-09 2016-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Stress relief structures in package assemblies
JP6493665B2 (ja) * 2015-03-13 2019-04-03 セイコーエプソン株式会社 Ｍｅｍｓデバイス、液体噴射ヘッド及び液体噴射装置
JP7140314B2 (ja) * 2018-09-05 2022-09-21 住友電工デバイス・イノベーション株式会社 半導体装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745259A (en) * 1980-09-01 1982-03-15 Hitachi Ltd Resin sealing type semiconductor device
JPS6010645A (ja) * 1983-06-30 1985-01-19 Toshiba Corp 樹脂封止型半導体装置
US4558345A (en) * 1983-10-27 1985-12-10 Rca Corporation Multiple connection bond pad for an integrated circuit device and method of making same
JPS6094765A (ja) * 1983-10-28 1985-05-27 Sharp Corp 半導体素子の外部取り出し金属電極部の窓開け形状
JPS60242631A (ja) * 1985-05-07 1985-12-02 Sanyo Electric Co Ltd 集積回路の多量製造方法
JPS63141330A (ja) * 1986-12-03 1988-06-13 Nec Corp 半導体集積回路装置
JP2621420B2 (ja) * 1988-09-28 1997-06-18 日本電気株式会社 半導体装置のボンディングパッド
JPH02168656A (ja) * 1988-12-21 1990-06-28 Nec Corp 樹脂封止型半導体集積回路
JPH02285649A (ja) * 1989-04-27 1990-11-22 Toshiba Corp 半導体装置
US5291060A (en) * 1989-10-16 1994-03-01 Shinko Electric Industries Co., Ltd. Lead frame and semiconductor device using same
JP2867488B2 (ja) * 1989-11-07 1999-03-08 セイコーエプソン株式会社 半導体装置
JPH0648700B2 (ja) * 1990-12-27 1994-06-22 インターナショナル・ビジネス・マシーンズ・コーポレイション 導電性層の剥離防止構造を有するｔａｂテープ
US5289036A (en) * 1991-01-22 1994-02-22 Nec Corporation Resin sealed semiconductor integrated circuit
JP3004083B2 (ja) * 1991-06-21 2000-01-31 沖電気工業株式会社 半導体装置及びその製造装置
JPH05175191A (ja) * 1991-10-22 1993-07-13 Mitsubishi Electric Corp 積層導電配線
JPH05226405A (ja) * 1992-02-14 1993-09-03 Toshiba Corp 半導体装置
CH686325A5 (de) * 1992-11-27 1996-02-29 Esec Sempac Sa Elektronikmodul und Chip-Karte.

Also Published As

Publication number Publication date
JP4095123B2 (ja) 2008-06-04
KR0170316B1 (ko) 1999-02-01
JPH0936166A (ja) 1997-02-07
US5804883A (en) 1998-09-08

Similar Documents

Publication Publication Date Title
KR920015496A (ko) 반도체장치
KR950024313A (ko) 고 열방출용 반도체 패키지
KR970008531A (ko) 반도체 장치의 패드 설계 방법
KR840005921A (ko) 전자 장치
KR910007118A (ko) 핀과 반도체 칩사이에 개선된 연결을 갖는 집적 장치 및 그의 제조 방법
KR910001956A (ko) 반도체장치
KR910007094A (ko) 수지밀봉형 반도체장치
KR960019621A (ko) 수지 봉합형 반도체장치의 구조
KR910007117A (ko) 수지밀봉형 반도체장치
KR850002676A (ko) 집적회로 칩팩키지
KR910017598A (ko) 반도체 장치의 실장 구조
KR870009468A (ko) 반도체 장치
KR910003775A (ko) 반도체장치의 땜납 도포방법
KR910001924A (ko) 반도체 장치
KR930003333A (ko) 반도체 디바이스
EP0771027A4 (en) SEMICONDUCTOR ARRANGEMENT
KR940010281A (ko) 반도체 소자
KR970013275A (ko) 관통홀이 형성된 리드프레임을 갖는 반도체 칩 패키지
KR910700542A (ko) 칩 캐리어
KR970023921A (ko) 신뢰성의 향상을 위한 반도체 소자의 전극 구조
KR920007152A (ko) 반도체 장치의 수지밀봉방법
KR970023618A (ko) 노이즈 감소를 위한 도전층을 구비한 반도체 장치
KR960035996A (ko) 칩홀딩 리드 온 칩타입 반도체 패키지
KR930001398A (ko) 반도체 패키지
KR970053680A (ko) 접지층이 형성된 내부 리드를 갖는 반도체 칩 패키지

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20071001

Year of fee payment: 10

LAPS Lapse due to unpaid annual fee