KR950024313A - 고 열방출용 반도체 패키지 - Google Patents

고 열방출용 반도체 패키지 Download PDF

Info

Publication number
KR950024313A
KR950024313A KR1019940000389A KR19940000389A KR950024313A KR 950024313 A KR950024313 A KR 950024313A KR 1019940000389 A KR1019940000389 A KR 1019940000389A KR 19940000389 A KR19940000389 A KR 19940000389A KR 950024313 A KR950024313 A KR 950024313A
Authority
KR
South Korea
Prior art keywords
semiconductor
heat dissipation
semiconductor package
metal cap
heat
Prior art date
Application number
KR1019940000389A
Other languages
English (en)
Other versions
KR970005712B1 (ko
Inventor
김구성
김종국
안승호
박재명
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019940000389A priority Critical patent/KR970005712B1/ko
Priority to DE19500422A priority patent/DE19500422A1/de
Priority to US08/370,389 priority patent/US5552635A/en
Priority to JP7002413A priority patent/JPH07254668A/ja
Publication of KR950024313A publication Critical patent/KR950024313A/ko
Application granted granted Critical
Publication of KR970005712B1 publication Critical patent/KR970005712B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01021—Scandium [Sc]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/15165—Monolayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

반도체 기판 하부에 다수개의 솔더 볼 형성에 의한 신호 입/출력단자의 다핀화가 용이하고 여러가지 형태의 히트 스프레터를 적용함으로써 열방출이 용이하며, 칩과 메탈캡 또는 칩과 히트 싱크가 부착된 메탈캡이 직접 연결될 수 있도록 하부에 형성된 솔더볼을 구비하는 반도체 기판과, 상기 반도체 기판과 상면부를 밀봉하는 메탈캡을 각각 구비하는 열방출용 반도체 패키지에 있어서; 상기 반도체 기판상에 실장되는 적어도 하나 이상의 반도체칩과; 상기 반도체 칩과 반도체 기판을 전기적으로 연결하는 본딩수단과; 상기 반도체 칩의 상면에 절연 접착체에 의해 실장되며 고열전도도를 갖는 히트 스프레더 및 상기 히트 스프레더의 상면에 도포되어 있는 서멀 컴파운드를 포함하는 열방출수단과; 상기 메탈캡의 상면에 탑재되어 있는 히트 싱크를 각각 구비하고 있다. 따라서 이와 같은 구성은 소자 동작시 발생되는 열을 효과적으로 방출하여 신뢰성을 향상시킬 수 있고 저가의 대량생산이 용이한 고열방출용 반도체 패키지에 유용하게 적용된 장점이 있다.

Description

고 열방출용 반도체 패키지
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제6도는 이 발명에 따른 고 열방출용 반도체 패키지의 일 실시예를 나타내는 단면도,
제7도는 이 발명에 따른 고 열방출용 반도체 패키지의 다른 실시예를 나타내는 단면도.

Claims (14)

  1. 열방출용 반도체 패키지에 있어서; 상기 반도체 기판상에 실장되는 적어도 하나 이상의 반도칩과; 상기 반도체 칩과 반도체 기판을 전기적으로 연결하는 본딩수단과; 상기 반도체 칩의 상면에 절연 접착제에 의해 실장되며 고열전도도를 갖는 히트 스프레더 및 상기 히트 스프레터의 상면에 도포되어 있는 서멀 컴파운드를 포함하는 열방출수단과; 상기 결과적 구조에 반도체 소자를 보호하기 의하여 밀봉된 메탈캡을 구비함을 특징으로 하는 고열방출용 반도체 패키지.
  2. 제1항에 있어서, 상기 열방출수단으로 적용되는 서멀 컴파운드는 반도체 칩의 상면에서 메탈캡까지 단층으로 두껍게 형성됨을 특징으로 하는 고 열방출용 반도체 패키지.
  3. 제1항에 있어서, 상기 열방출수단으로 적용되는 히트 스프레더는 반도체 칩의 접착제 상면과 메탈캡의 하면사이에 레디얼 핑커(radial finger)형상으로 탑재되는 고 열방출용 반도체 패키지.
  4. 제1항에 있어서, 상기 히트 스프레더는 플랫트 형상, 단면 폴드형상, 양면 폴드형상, S자형상중 임의의 군으로 선택되어 접착제와 서멀 컴파운드사이에 탑재되는 고 열방출용 반도체 패키지.
  5. 제1항에 있어서, 상기 와이어 본딩수단은 탭(TAB) 본딩수단을 더 구비함을 특징으로 하는 고 열방출용 반도체 패키지.
  6. 제1항에 있어서, 상기 접착제는 서멀 플라스틱 에폭시 재질로 되는 고 열방출용 반도체 패키지.
  7. 제1항에 있어서, 상기 서멀 컴파운드는 실리콘 젤 또는 에라스토머중 어느 하나의 재질로 되는 고 열방출용 반도체 패키지.
  8. 제1항에 있어서, 상기 히트 스프레더는 고열전도도를 갖는 카파, 카파 합금, 알루미늄, 알루미늄 합금, 스틸, 스텐레스 스틸중 임의의 군으로 선택되어 형성됨을 특징으로 하는 고 열방출용 반도체 패키지.
  9. 제1항이 있어서, 상기 메탈캡 상부에 히트싱크를 탑재함을 특징으로 하는 고 열방출용 반도체 패키지.
  10. 열방출용 반도체 패키지에 있어서; 상기 반도체 기판의 양측면에 마련되어 있는 유전체 충진용 비어 홀과; 상기 반도체 기판상에 실장되는 적어도 하나 이상의 반도체 칩과; 상기 반도체 칩과 반도체 기판을 적기적으로 연결하는 본딩수단과; 상기 반도체 기판과 메탈캡에 의해 형성되는 캐비티에 충진된 유전체; 상기 메탈캡의 일측에 형성되어 있는 열방출용 적어도 하나의 비어 홀과; 상기 결과적 구조에 반도체 소자를 보호하기 위하여 밀봉된 메탈캡을 구비함을 특징으로 하는 고 열방출용 반도체 패키지.
  11. 제10항에 있어서, 상기 메탈캡의 일측에 형성된 비어 홀을 통하여 유전체를 주입한 후 밀봉함을 특징으로 하는 고 열방출용 반도체 패키지.
  12. 제10항에 있어서, 상기 유전체는 고전도도 물질을 갖는 미네랄 오일됨을 특징으로 하는 고 열방출용 반도체 패키지.
  13. 제10항에 있어서, 상기 반도체 기판의 양측면에 마련된 비어 홀을 통하여 유전체를 주입한 후 밀봉합을 특징으로 하는 고 열방출용 반도체 패키지.
  14. 제10항에 있어서, 상기 메탈캡 상부에 히트싱크를 탑재함을 특징으로 하는 고 열방출용 반도체 패키지.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940000389A 1994-01-11 1994-01-11 고 열방출용 반도체 패키지 KR970005712B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019940000389A KR970005712B1 (ko) 1994-01-11 1994-01-11 고 열방출용 반도체 패키지
DE19500422A DE19500422A1 (de) 1994-01-11 1995-01-10 Halbleiterbaustein mit hoher thermischer Emission
US08/370,389 US5552635A (en) 1994-01-11 1995-01-10 High thermal emissive semiconductor device package
JP7002413A JPH07254668A (ja) 1994-01-11 1995-01-11 高熱放出用の半導体パッケージ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940000389A KR970005712B1 (ko) 1994-01-11 1994-01-11 고 열방출용 반도체 패키지

Publications (2)

Publication Number Publication Date
KR950024313A true KR950024313A (ko) 1995-08-21
KR970005712B1 KR970005712B1 (ko) 1997-04-19

Family

ID=19375506

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940000389A KR970005712B1 (ko) 1994-01-11 1994-01-11 고 열방출용 반도체 패키지

Country Status (4)

Country Link
US (1) US5552635A (ko)
JP (1) JPH07254668A (ko)
KR (1) KR970005712B1 (ko)
DE (1) DE19500422A1 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100632459B1 (ko) * 2004-01-28 2006-10-09 삼성전자주식회사 열방출형 반도체 패키지 및 그 제조방법
KR101332866B1 (ko) * 2012-02-16 2013-11-22 앰코 테크놀로지 코리아 주식회사 반도체 장치

Families Citing this family (143)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5572070A (en) * 1995-02-06 1996-11-05 Rjr Polymers, Inc. Integrated circuit packages with heat dissipation for high current load
JPH08316364A (ja) * 1995-05-16 1996-11-29 Toshiba Corp 半導体装置
JPH0955459A (ja) * 1995-06-06 1997-02-25 Seiko Epson Corp 半導体装置
US5572405A (en) * 1995-06-07 1996-11-05 International Business Machines Corporation (Ibm) Thermally enhanced ball grid array package
US5705851A (en) * 1995-06-28 1998-01-06 National Semiconductor Corporation Thermal ball lead integrated package
US5731709A (en) * 1996-01-26 1998-03-24 Motorola, Inc. Method for testing a ball grid array semiconductor device and a device for such testing
JPH09226280A (ja) * 1996-02-22 1997-09-02 Shinko Electric Ind Co Ltd カードモジュール
KR100192760B1 (ko) * 1996-02-29 1999-06-15 황인길 메탈 캐리어 프레임을 이용한 bag반도체 패키지의 제조방법 및 그반도체 패키지
US5866953A (en) * 1996-05-24 1999-02-02 Micron Technology, Inc. Packaged die on PCB with heat sink encapsulant
US5854512A (en) * 1996-09-20 1998-12-29 Vlsi Technology, Inc. High density leaded ball-grid array package
US5898219A (en) * 1997-04-02 1999-04-27 Intel Corporation Custom corner attach heat sink design for a plastic ball grid array integrated circuit package
US5977622A (en) * 1997-04-25 1999-11-02 Lsi Logic Corporation Stiffener with slots for clip-on heat sink attachment
US5898571A (en) * 1997-04-28 1999-04-27 Lsi Logic Corporation Apparatus and method for clip-on attachment of heat sinks to encapsulated semiconductor packages
US6011304A (en) * 1997-05-05 2000-01-04 Lsi Logic Corporation Stiffener ring attachment with holes and removable snap-in heat sink or heat spreader/lid
US5866943A (en) * 1997-06-23 1999-02-02 Lsi Logic Corporation System and method for forming a grid array device package employing electomagnetic shielding
US6285078B1 (en) * 1997-11-25 2001-09-04 Intel Corporation Thermal spreader cap and grease containment structure for semiconductor device
KR100253363B1 (ko) * 1997-12-02 2000-04-15 김영환 반도체 패키지용 기판과 그 기판을 이용한 랜드 그리드 어레이반도체 패키지 및 그들의 제조 방법
US5903436A (en) * 1997-12-30 1999-05-11 Intel Corporation Emulative lid/heatspreader for processor die attached to an organic substrate
US6351034B1 (en) 1998-06-01 2002-02-26 Micron Technology, Inc. Clip chip carrier
US6297548B1 (en) * 1998-06-30 2001-10-02 Micron Technology, Inc. Stackable ceramic FBGA for high thermal applications
US6297960B1 (en) 1998-06-30 2001-10-02 Micron Technology, Inc. Heat sink with alignment and retaining features
US6303986B1 (en) 1998-07-29 2001-10-16 Silicon Light Machines Method of and apparatus for sealing an hermetic lid to a semiconductor die
US6326687B1 (en) 1998-09-01 2001-12-04 Micron Technology, Inc. IC package with dual heat spreaders
US6117797A (en) * 1998-09-03 2000-09-12 Micron Technology, Inc. Attachment method for heat sinks and devices involving removal of misplaced encapsulant
TW388976B (en) * 1998-10-21 2000-05-01 Siliconware Precision Industries Co Ltd Semiconductor package with fully exposed heat sink
US6218730B1 (en) * 1999-01-06 2001-04-17 International Business Machines Corporation Apparatus for controlling thermal interface gap distance
US6162663A (en) * 1999-04-20 2000-12-19 Schoenstein; Paul G. Dissipation of heat from a circuit board having bare silicon chips mounted thereon
US6531771B1 (en) 1999-04-20 2003-03-11 Tyco Electronics Corporation Dissipation of heat from a circuit board having bare silicon chips mounted thereon
US6091603A (en) * 1999-09-30 2000-07-18 International Business Machines Corporation Customizable lid for improved thermal performance of modules using flip chips
US6504243B1 (en) * 2000-04-07 2003-01-07 Advanced Micro Devices, Inc. Removable heat transfer apparatus for a pin grid array (PGA) device, and associated installation and removal methods
US6512675B1 (en) * 2000-06-28 2003-01-28 Advanced Micro Devices, Inc. Heat sink grounded to a grounded package lid
US6292369B1 (en) 2000-08-07 2001-09-18 International Business Machines Corporation Methods for customizing lid for improved thermal performance of modules using flip chips
EP1346411A2 (en) * 2000-12-01 2003-09-24 Broadcom Corporation Thermally and electrically enhanced ball grid array packaging
US6906414B2 (en) * 2000-12-22 2005-06-14 Broadcom Corporation Ball grid array package with patterned stiffener layer
US20020079572A1 (en) 2000-12-22 2002-06-27 Khan Reza-Ur Rahman Enhanced die-up ball grid array and method for making the same
US7132744B2 (en) 2000-12-22 2006-11-07 Broadcom Corporation Enhanced die-up ball grid array packages and method for making the same
US7161239B2 (en) 2000-12-22 2007-01-09 Broadcom Corporation Ball grid array package enhanced with a thermal and electrical connector
US6853070B2 (en) * 2001-02-15 2005-02-08 Broadcom Corporation Die-down ball grid array package with die-attached heat spreader and method for making the same
TW490830B (en) * 2001-03-12 2002-06-11 Siliconware Precision Industries Co Ltd Heat sink with a shrinking mechanism and semiconductor device having the heat sink
US7060747B2 (en) * 2001-03-30 2006-06-13 Intel Corporation Chain extension for thermal materials
US7259448B2 (en) * 2001-05-07 2007-08-21 Broadcom Corporation Die-up ball grid array package with a heat spreader and method for making the same
US6747781B2 (en) 2001-06-25 2004-06-08 Silicon Light Machines, Inc. Method, apparatus, and diffuser for reducing laser speckle
TWI242584B (en) 2001-07-03 2005-11-01 Lord Corp High thermal conductivity spin castable potting compound
US6829092B2 (en) * 2001-08-15 2004-12-07 Silicon Light Machines, Inc. Blazed grating light valve
US6930364B2 (en) 2001-09-13 2005-08-16 Silicon Light Machines Corporation Microelectronic mechanical system and methods
US6617683B2 (en) * 2001-09-28 2003-09-09 Intel Corporation Thermal performance in flip chip/integral heat spreader packages using low modulus thermal interface material
JP3907461B2 (ja) * 2001-12-03 2007-04-18 シャープ株式会社 半導体モジュールの製造方法
US6879039B2 (en) 2001-12-18 2005-04-12 Broadcom Corporation Ball grid array package substrates and method of making the same
US6800238B1 (en) 2002-01-15 2004-10-05 Silicon Light Machines, Inc. Method for domain patterning in low coercive field ferroelectrics
US7550845B2 (en) * 2002-02-01 2009-06-23 Broadcom Corporation Ball grid array package with separated stiffener layer
US6861750B2 (en) 2002-02-01 2005-03-01 Broadcom Corporation Ball grid array package with multiple interposers
US6825108B2 (en) * 2002-02-01 2004-11-30 Broadcom Corporation Ball grid array package fabrication with IC die support structures
US7245500B2 (en) * 2002-02-01 2007-07-17 Broadcom Corporation Ball grid array package with stepped stiffener layer
US6882041B1 (en) * 2002-02-05 2005-04-19 Altera Corporation Thermally enhanced metal capped BGA package
US6876553B2 (en) 2002-03-21 2005-04-05 Broadcom Corporation Enhanced die-up ball grid array package with two substrates
US7196415B2 (en) 2002-03-22 2007-03-27 Broadcom Corporation Low voltage drop and high thermal performance ball grid array package
US6744640B2 (en) * 2002-04-10 2004-06-01 Gore Enterprise Holdings, Inc. Board-level EMI shield with enhanced thermal dissipation
US6839479B2 (en) * 2002-05-29 2005-01-04 Silicon Light Machines Corporation Optical switch
US6822797B1 (en) 2002-05-31 2004-11-23 Silicon Light Machines, Inc. Light modulator structure for producing high-contrast operation using zero-order light
JP3539952B2 (ja) * 2002-06-13 2004-07-07 沖電気工業株式会社 レベル識別回路
US6829258B1 (en) 2002-06-26 2004-12-07 Silicon Light Machines, Inc. Rapidly tunable external cavity laser
US6813059B2 (en) 2002-06-28 2004-11-02 Silicon Light Machines, Inc. Reduced formation of asperities in contact micro-structures
TW567563B (en) * 2002-10-02 2003-12-21 Advanced Semiconductor Eng Semiconductor package and manufacturing method thereof
US6922272B1 (en) * 2003-02-14 2005-07-26 Silicon Light Machines Corporation Method and apparatus for leveling thermal stress variations in multi-layer MEMS devices
US6967718B1 (en) 2003-02-28 2005-11-22 Silicon Light Machines Corportion Method and apparatus for monitoring WDM channels and for analyzing dispersed spectrum of light
US7046420B1 (en) 2003-02-28 2006-05-16 Silicon Light Machines Corporation MEM micro-structures and methods of making the same
US20070164424A1 (en) * 2003-04-02 2007-07-19 Nancy Dean Thermal interconnect and interface systems, methods of production and uses thereof
EP1478018A1 (en) * 2003-05-14 2004-11-17 Gainward Co., Ltd. Metal shield for protecting a chip against damage
KR20050001930A (ko) * 2003-06-28 2005-01-07 삼성전기주식회사 고밀도 칩 스케일 패키지 및 그 제조 방법
EP1515364B1 (en) * 2003-09-15 2016-04-13 Nuvotronics, LLC Device package and methods for the fabrication and testing thereof
US7209354B2 (en) * 2003-12-02 2007-04-24 Silicon Intergrated Systems Corp. Ball grid array package with heat sink device
JP3809168B2 (ja) * 2004-02-03 2006-08-16 株式会社東芝 半導体モジュール
KR100631922B1 (ko) * 2004-02-23 2006-10-04 삼성전자주식회사 개선된 열 확산 성능을 갖는 다층 회로 보오드 및 그에따른 제조방법
US7482686B2 (en) 2004-06-21 2009-01-27 Braodcom Corporation Multipiece apparatus for thermal and electromagnetic interference (EMI) shielding enhancement in die-up array packages and method of making the same
US7411281B2 (en) * 2004-06-21 2008-08-12 Broadcom Corporation Integrated circuit device package having both wire bond and flip-chip interconnections and method of making the same
US7432586B2 (en) 2004-06-21 2008-10-07 Broadcom Corporation Apparatus and method for thermal and electromagnetic interference (EMI) shielding enhancement in die-up array packages
US7786591B2 (en) 2004-09-29 2010-08-31 Broadcom Corporation Die down ball grid array package
TWI321342B (en) * 2004-11-05 2010-03-01 Altus Technology Inc An integrate circuit chip encapsulation and the method of manufacturing it
KR100657158B1 (ko) * 2004-12-31 2006-12-12 동부일렉트로닉스 주식회사 실장 높이가 감소된 반도체 패키지 소자 및 그 제조 방법
TW200631144A (en) * 2005-02-18 2006-09-01 Mitac Technology Corp Chip heat dissipation structure and manufacturing method thereof
TWI299976B (en) * 2005-03-02 2008-08-11 Mitac Technology Corp Air blown chip heat dissipation device and manufacturing method thereof
TWI290012B (en) * 2005-03-03 2007-11-11 Mitac Technology Corp Printed circuit board structure and manufacturing method thereof
DE102005012218B4 (de) * 2005-03-15 2012-12-06 Infineon Technologies Ag Halbleiterbauelement sowie Kühlkörperelement für ein Halbleiterbauelement
TW200634140A (en) * 2005-03-21 2006-10-01 Mitac Technology Corp Heat conduction interface structure and manufacturing process method thereof
KR100680910B1 (ko) 2005-04-08 2007-02-08 매그나칩 반도체 유한회사 반도체 패키지 및 그 제작방법
DE102005023129A1 (de) * 2005-05-19 2006-11-23 Infineon Technologies Ag Bauteil mit einer Hitzekrone
US20070051774A1 (en) * 2005-09-06 2007-03-08 Stipp John N Method of controlling solder deposition on heat spreader used for semiconductor package
DE102005054268B4 (de) 2005-11-11 2012-04-26 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauteils mit mindestens einem Halbleiterchip
JP4976688B2 (ja) * 2005-12-15 2012-07-18 富士電機株式会社 ヒートスプレッダと金属板との接合方法
US7262369B1 (en) 2006-03-09 2007-08-28 Laird Technologies, Inc. Combined board level EMI shielding and thermal management
DE102006007303A1 (de) * 2006-02-16 2007-08-30 Infineon Technologies Ag Leiterplatte
US20070199679A1 (en) * 2006-02-24 2007-08-30 Ming-Hang Hwang Chip Heat Dissipation System and Manufacturing Method and Structure of Heat Dissipation Device Thereof
US20070201207A1 (en) * 2006-02-24 2007-08-30 Ming-Hang Hwang Chip Heat Dissipation System and Structure of Heat Exchange Device and Manufacturing Method Thereof
US20070199681A1 (en) * 2006-02-24 2007-08-30 Ming-Hang Hwang Dissipation Heat Pipe Structure and Manufacturing Method Thereof
US20070199682A1 (en) * 2006-02-24 2007-08-30 Ming-Hang Hwang Dissipation Heat Pipe Structure and Manufacturing Method Thereof
US20070201203A1 (en) * 2006-02-24 2007-08-30 Ming-Hang Hwang Adhesion Material Structure and Process Method Thereof
US20070199678A1 (en) * 2006-02-24 2007-08-30 Ming-Hang Hwang Surface Coating Film Structure on Heat Dissipation Metal and Manufacturing Method Thereof
US20070199677A1 (en) * 2006-02-24 2007-08-30 Ming-Hang Hwang Heat Sink Fin Structure and Manufacturing Method Thereof
US7623360B2 (en) 2006-03-09 2009-11-24 Laird Technologies, Inc. EMI shielding and thermal management assemblies including frames and covers with multi-position latching
US7463496B2 (en) * 2006-03-09 2008-12-09 Laird Technologies, Inc. Low-profile board level EMI shielding and thermal management apparatus and spring clips for use therewith
US7317618B2 (en) * 2006-03-09 2008-01-08 Laird Technologies, Inc. Combined board level shielding and thermal management
US8183680B2 (en) 2006-05-16 2012-05-22 Broadcom Corporation No-lead IC packages having integrated heat spreader for electromagnetic interference (EMI) shielding and thermal enhancement
US8063482B2 (en) 2006-06-30 2011-11-22 Intel Corporation Heat spreader as mechanical reinforcement for ultra-thin die
US20080124840A1 (en) * 2006-07-31 2008-05-29 Su Michael Z Electrical Insulating Layer for Metallic Thermal Interface Material
US7544542B2 (en) * 2006-08-07 2009-06-09 Advanced Micro Devices, Inc. Reduction of damage to thermal interface material due to asymmetrical load
JP4984730B2 (ja) * 2006-08-09 2012-07-25 富士電機株式会社 半導体装置
US20080067669A1 (en) * 2006-09-18 2008-03-20 Buttel Nicole A Systems, devices and methods for controlling thermal interface thickness in a semiconductor die package
KR100810491B1 (ko) * 2007-03-02 2008-03-07 삼성전기주식회사 전자소자 패키지 및 그 제조방법
JP4333756B2 (ja) 2007-03-13 2009-09-16 セイコーエプソン株式会社 放熱部材、電気光学装置及び電子機器
US8178956B2 (en) * 2007-12-13 2012-05-15 Stats Chippac Ltd. Integrated circuit package system for shielding electromagnetic interference
SG142321A1 (en) * 2008-04-24 2009-11-26 Micron Technology Inc Pre-encapsulated cavity interposer
KR20090119187A (ko) * 2008-05-15 2009-11-19 삼성전자주식회사 연료전지를 포함하는 패키지, 그 제조 방법, 및 패키지를포함하는 카드 및 시스템
US20100052156A1 (en) * 2008-08-27 2010-03-04 Advanced Semiconductor Engineering, Inc. Chip scale package structure and fabrication method thereof
US8362607B2 (en) * 2009-06-03 2013-01-29 Honeywell International Inc. Integrated circuit package including a thermally and electrically conductive package lid
US7965514B2 (en) 2009-06-05 2011-06-21 Laird Technologies, Inc. Assemblies and methods for dissipating heat from handheld electronic devices
US8477499B2 (en) 2009-06-05 2013-07-02 Laird Technologies, Inc. Assemblies and methods for dissipating heat from handheld electronic devices
US8362609B1 (en) 2009-10-27 2013-01-29 Xilinx, Inc. Integrated circuit package and method of forming an integrated circuit package
US20110255850A1 (en) * 2010-04-19 2011-10-20 Richard Hung Minh Dinh Electronic subassemblies for electronic devices
US8810028B1 (en) 2010-06-30 2014-08-19 Xilinx, Inc. Integrated circuit packaging devices and methods
JP2012033559A (ja) 2010-07-28 2012-02-16 J Devices:Kk 半導体装置
TWI471988B (zh) * 2012-11-13 2015-02-01 矽品精密工業股份有限公司 半導體封裝件之製法
US9799592B2 (en) 2013-11-19 2017-10-24 Amkor Technology, Inc. Semicondutor device with through-silicon via-less deep wells
KR101366461B1 (ko) 2012-11-20 2014-02-26 앰코 테크놀로지 코리아 주식회사 반도체 디바이스 및 그 제조 방법
US9349628B2 (en) * 2013-02-25 2016-05-24 Advanced Micro Devices, Inc. Method and an alignment plate for engaging a stiffener frame and a circuit board
US10373891B2 (en) * 2013-06-14 2019-08-06 Laird Technologies, Inc. Methods for establishing thermal joints between heat spreaders or lids and heat sources
US20140368992A1 (en) * 2013-06-14 2014-12-18 Laird Technologies, Inc. Methods For Establishing Thermal Joints Between Heat Spreaders and Heat Generating Components Using Thermoplastic and/or Self-Healing Thermal Interface Materials
JP6038740B2 (ja) * 2013-07-04 2016-12-07 株式会社神戸製鋼所 電気素子冷却用ヒートシンク及び電気素子冷却用ヒートシンクの製造方法
US9576930B2 (en) 2013-11-08 2017-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Thermally conductive structure for heat dissipation in semiconductor packages
US9559064B2 (en) * 2013-12-04 2017-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. Warpage control in package-on-package structures
US9184104B1 (en) * 2014-05-28 2015-11-10 Stats Chippac, Ltd. Semiconductor device and method of forming adhesive layer over insulating layer for bonding carrier to mixed surfaces of semiconductor die and encapsulant
US9443744B2 (en) * 2014-07-14 2016-09-13 Micron Technology, Inc. Stacked semiconductor die assemblies with high efficiency thermal paths and associated methods
US9337119B2 (en) * 2014-07-14 2016-05-10 Micron Technology, Inc. Stacked semiconductor die assemblies with high efficiency thermal paths and associated systems
JP6286320B2 (ja) * 2014-08-07 2018-02-28 日立オートモティブシステムズ株式会社 パワーモジュール
JP6290758B2 (ja) * 2014-09-19 2018-03-07 ルネサスエレクトロニクス株式会社 半導体装置
JP6058225B1 (ja) * 2015-12-24 2017-01-11 三菱電機株式会社 高周波回路の電磁シールド構造及び高周波モジュール
US9960328B2 (en) 2016-09-06 2018-05-01 Amkor Technology, Inc. Semiconductor device and manufacturing method thereof
JP6724707B2 (ja) * 2016-10-11 2020-07-15 トヨタ自動車株式会社 半導体冷却装置
US10410942B2 (en) * 2017-11-27 2019-09-10 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method for manufacturing the same
US10319654B1 (en) 2017-12-01 2019-06-11 Cubic Corporation Integrated chip scale packages
JP7235752B2 (ja) * 2018-08-03 2023-03-08 ソニーセミコンダクタソリューションズ株式会社 半導体装置
WO2021010874A1 (en) 2019-07-16 2021-01-21 Telefonaktiebolaget Lm Ericsson (Publ) A cooling device, a receptacle assembly, a system and a printed board assembly
CN111354692A (zh) * 2020-03-10 2020-06-30 上海瞻芯电子科技有限公司 功率散热装置
US11901308B2 (en) * 2020-07-21 2024-02-13 UTAC Headquarters Pte. Ltd. Semiconductor packages with integrated shielding

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4415025A (en) * 1981-08-10 1983-11-15 International Business Machines Corporation Thermal conduction element for semiconductor devices
JPS6016452A (ja) * 1983-07-08 1985-01-28 Nec Corp 半導体集積回路
JPS63186453A (ja) * 1987-01-29 1988-08-02 Nec Corp Ｌｓｉ
JPH0360059A (ja) * 1989-07-27 1991-03-15 Nec Ic Microcomput Syst Ltd 半導体装置
JPH04192552A (ja) * 1990-11-27 1992-07-10 Nec Corp 半導体素子用パッケージ
US5216278A (en) * 1990-12-04 1993-06-01 Motorola, Inc. Semiconductor device having a pad array carrier package
JP2920702B2 (ja) * 1991-03-19 1999-07-19 株式会社ニコン 半導体装置
EP0512186A1 (en) * 1991-05-03 1992-11-11 International Business Machines Corporation Cooling structures and package modules for semiconductors
JPH0513627A (ja) * 1991-07-09 1993-01-22 Fujitsu Ltd 半導体装置と熱伝達機構
JP3013612B2 (ja) * 1992-07-09 2000-02-28 日本電気株式会社 半導体装置
JP2800605B2 (ja) * 1992-12-03 1998-09-21 日本電気株式会社 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100632459B1 (ko) * 2004-01-28 2006-10-09 삼성전자주식회사 열방출형 반도체 패키지 및 그 제조방법
US7202561B2 (en) 2004-01-28 2007-04-10 Samsung Electronics Co., Ltd. Semiconductor package with heat dissipating structure and method of manufacturing the same
KR101332866B1 (ko) * 2012-02-16 2013-11-22 앰코 테크놀로지 코리아 주식회사 반도체 장치

Also Published As

Publication number Publication date
JPH07254668A (ja) 1995-10-03
US5552635A (en) 1996-09-03
KR970005712B1 (ko) 1997-04-19
DE19500422A1 (de) 1995-07-13

Similar Documents

Publication Publication Date Title
KR950024313A (ko) 고 열방출용 반도체 패키지
US6411507B1 (en) Removing heat from integrated circuit devices mounted on a support structure
US5227663A (en) Integral dam and heat sink for semiconductor device assembly
US5175612A (en) Heat sink for semiconductor device assembly
KR960012449A (ko) 반도체장치
KR960026690A (ko) 반도체 패키지
JP2982713B2 (ja) 半導体素子の放熱構造
KR960019621A (ko) 수지 봉합형 반도체장치의 구조
KR950031665A (ko) 전자부품 냉각장치 및 방법
KR960032692A (ko) 멀티칩 실장을 위한 반도체 패키지
KR910001949A (ko) 무플래그 리드프레임, 피키지 및 방법
US20220293484A1 (en) Integrated circuit package system
JPH01217998A (ja) 半導体装置
KR970072361A (ko) Bga 반도체 패키지
JPS6129158A (ja) 半導体装置
JPH0778918A (ja) 半導体装置
KR100191854B1 (ko) 요철이 형성된 히트 싱크를 이용한 고 열방출용 반도체 칩 패키지
KR200238127Y1 (ko) 열방출형반도체패키지
JPH0395958A (ja) ヒートシンク付セラミックパッケージ
TWI231982B (en) Semiconductor package with runners on heat slug
JPH04207059A (ja) 半導体装置
KR870000753A (ko) 수지봉합형 반도체장치
KR970053682A (ko) 열전 소자를 이용한 고방열형 패키지
KR970024058A (ko) 메탈 리드(lid)로 봉지된 패키지
KR960026684A (ko) 반도체 패캐지

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20080701

Year of fee payment: 12

LAPS Lapse due to unpaid annual fee