JP6286320B2 - パワーモジュール - Google Patents
パワーモジュール Download PDFInfo
- Publication number
- JP6286320B2 JP6286320B2 JP2014160942A JP2014160942A JP6286320B2 JP 6286320 B2 JP6286320 B2 JP 6286320B2 JP 2014160942 A JP2014160942 A JP 2014160942A JP 2014160942 A JP2014160942 A JP 2014160942A JP 6286320 B2 JP6286320 B2 JP 6286320B2
- Authority
- JP
- Japan
- Prior art keywords
- power module
- power semiconductor
- base plate
- side wall
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60L—PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES; SUPPLYING ELECTRIC POWER FOR AUXILIARY EQUIPMENT OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRODYNAMIC BRAKE SYSTEMS FOR VEHICLES IN GENERAL; MAGNETIC SUSPENSION OR LEVITATION FOR VEHICLES; MONITORING OPERATING VARIABLES OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRIC SAFETY DEVICES FOR ELECTRICALLY-PROPELLED VEHICLES
- B60L50/00—Electric propulsion with power supplied within the vehicle
- B60L50/50—Electric propulsion with power supplied within the vehicle using propulsion power supplied by batteries or fuel cells
- B60L50/51—Electric propulsion with power supplied within the vehicle using propulsion power supplied by batteries or fuel cells characterised by AC-motors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02K—DYNAMO-ELECTRIC MACHINES
- H02K11/00—Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection
- H02K11/30—Structural association with control circuits or drive circuits
- H02K11/33—Drive circuits, e.g. power electronics
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K5/00—Casings, cabinets or drawers for electric apparatus
- H05K5/0017—Casings, cabinets or drawers for electric apparatus with operator interface units
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/20218—Modifications to facilitate cooling, ventilating, or heating using a liquid coolant without phase change in electronic enclosures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4037—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink
- H01L2023/405—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink heatsink to package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/37124—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/3754—Coating
- H01L2224/37599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T10/00—Road transport of goods or passengers
- Y02T10/60—Other road transportation technologies with climate change mitigation effect
- Y02T10/70—Energy storage systems for electromobility, e.g. batteries
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Transportation (AREA)
- Mechanical Engineering (AREA)
- Thermal Sciences (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Inverter Devices (AREA)
Description
[電力変換装置]
以下、図を参照して、本発明に係る電力変換装置の一実施の形態を説明する。
図3ないし図10及び図14ないし図18を参照してパワーモジュール100について説明する。
図16及び図17に図示されるように、パワー半導体モジュール30の表面側には、交流出力側の導体板33と直流負極側の導体板34とが同一平面上に配置されている。
[パワーモジュール100の作製方法]
図13及び図14に示されるように、パワー半導体ユニット10Aとパワー半導体ユニット10Bを第1封止樹脂6で封止し、パワー半導体モジュール30を形成する。
図11は、図6に示すパワーモジュールの変形例を示すもので、図6の符号と同符号は同一構成部品を示すので、再度の詳細な説明は省略する。
図12は、図6に示す電力変換装置のパワーモジュールのさらに別の変形例を示すもので、図6の符号と同符号は同一構成部品を示すので、再度の詳細な説明は省略する。
Claims (7)
- パワー半導体素子を有する回路体と、
前記回路体を収納するケースと、を備え、
前記ケースは、前記回路体の一方の面と対向する第1ベース板を含んで構成される第1ケース部材と、前記回路体の一方の面とは反対側の他方の面と対向する第2ベース板を含んで構成される第2ケース部材と、を有し、
前記第1ケース部材は、前記第1ベース板と前記第2ベース板の配列方向に沿って形成された第1側壁部を有し、
前記第2ケース部材は、前記配列方向に沿って形成されるとともに前記第1側壁部と接続される第2側壁部を有し、
前記第1側壁部と前記第2側壁部は、前記配列方向における当該第1側壁部と当該第2側壁部の長さの和が前記回路体の厚さより小さくなるように形成され、
前記第1ケース部材は、前記第1ベース板及び前記第2ベース板よりも剛性が小さい変形部と有するパワーモジュール。 - 請求項1に記載のパワーモジュールであって、
前記変形部の厚みは、前記第1ベース板の厚みより小さいパワーモジュール。 - 請求項1又は2に記載のパワーモジュールであって、
前記変形部は、前記第1ベース板の厚さ方向の中心から離れた位置に接続されるパワーモジュール。 - 請求項3に記載のパワーモジュールであって、
前記第1ベース板は、前記回路体が配置された側の面にフィンが形成され、
前記変形部と前記第1ベース板との接続位置は、前記フィンが形成された当該第1ベース板の面に近い側となるパワーモジュール。 - 請求項1又は2に記載のパワーモジュールであって、
前記変形部は、前記第1ベース板の厚さ方向の中心位置に接続されるパワーモジュール。 - 請求項1ないし5に記載のいずれかのパワーモジュールであって、
前記第1側壁部と前記第2側壁部は、前記第1ベース板と前記第2ベース板の表面間の距離が当該第1側壁部と当該第2側壁部の長さの和よりも大きくなるように、形成されるパワーモジュール。 - 請求項1ないし6に記載のいずれかのパワーモジュールであって、
前記第1側壁部は、前記回路体から離れる方向に突出する第1突出部を有し、
前記第2側壁部は、前記回路体から離れる方向に突出するとともに前記第1突出部と接触する第2突出部を有し、
前記第1突出部は、前記第2突出部と接合されるパワーモジュール。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014160942A JP6286320B2 (ja) | 2014-08-07 | 2014-08-07 | パワーモジュール |
PCT/JP2015/068937 WO2016021341A1 (ja) | 2014-08-07 | 2015-07-01 | パワーモジュール |
US15/325,310 US9912248B2 (en) | 2014-08-07 | 2015-07-01 | Power module |
DE112015003141.3T DE112015003141T5 (de) | 2014-08-07 | 2015-07-01 | Leistungsmodul |
CN201580042025.0A CN106663678B (zh) | 2014-08-07 | 2015-07-01 | 功率模块 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014160942A JP6286320B2 (ja) | 2014-08-07 | 2014-08-07 | パワーモジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016039224A JP2016039224A (ja) | 2016-03-22 |
JP6286320B2 true JP6286320B2 (ja) | 2018-02-28 |
Family
ID=55263616
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014160942A Expired - Fee Related JP6286320B2 (ja) | 2014-08-07 | 2014-08-07 | パワーモジュール |
Country Status (5)
Country | Link |
---|---|
US (1) | US9912248B2 (ja) |
JP (1) | JP6286320B2 (ja) |
CN (1) | CN106663678B (ja) |
DE (1) | DE112015003141T5 (ja) |
WO (1) | WO2016021341A1 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108886029B (zh) * | 2016-04-07 | 2021-12-07 | 日立安斯泰莫株式会社 | 盒体、半导体装置、盒体的制造方法 |
USD821325S1 (en) * | 2016-09-02 | 2018-06-26 | Corning Optical Communications LLC | 1×4 distribution point unit with surface ornamentation |
USD835040S1 (en) * | 2016-09-09 | 2018-12-04 | Corning Research & Development Corporation | 1×4 distribution point unit |
JP6815207B2 (ja) * | 2017-01-19 | 2021-01-20 | 日立オートモティブシステムズ株式会社 | パワー半導体装置及びその製造方法 |
JP6762271B2 (ja) | 2017-06-26 | 2020-09-30 | 三菱電機株式会社 | 半導体装置 |
JP6928092B2 (ja) * | 2017-07-25 | 2021-09-01 | 日立Astemo株式会社 | 電気回路装置、電力変換装置および回路体収容ケースの製造方法 |
JP6771447B2 (ja) | 2017-09-29 | 2020-10-21 | 日立オートモティブシステムズ株式会社 | パワー半導体装置およびそれを用いた電力変換装置 |
JP6979864B2 (ja) | 2017-11-30 | 2021-12-15 | 日立Astemo株式会社 | パワー半導体装置及びその製造方法 |
CN109861556A (zh) * | 2018-02-06 | 2019-06-07 | 台达电子企业管理(上海)有限公司 | 电源转换装置 |
US10887982B2 (en) * | 2018-03-22 | 2021-01-05 | Tesla, Inc. | Voltage regulator module with cooling structure |
JP7326717B2 (ja) * | 2018-10-05 | 2023-08-16 | ニデック株式会社 | モータ、および、電動車両 |
JP7100569B2 (ja) | 2018-11-22 | 2022-07-13 | 日立Astemo株式会社 | 半導体モジュール、電力変換装置および半導体モジュールの製造方法 |
EP3703117B1 (en) | 2019-02-28 | 2022-11-23 | Audi Ag | Electric power converter device with improved integration of cooler frame |
JP7193395B2 (ja) * | 2019-03-27 | 2022-12-20 | 日立Astemo株式会社 | パワー半導体装置 |
JP7326859B2 (ja) * | 2019-05-15 | 2023-08-16 | 三菱マテリアル株式会社 | 半導体モジュール部品 |
CN113075520A (zh) * | 2020-01-06 | 2021-07-06 | 广州汽车集团股份有限公司 | 针对Pin-Fin功率模块K-factor的测试工装和方法 |
US20230371216A1 (en) * | 2022-05-14 | 2023-11-16 | Hamilton Sundstrand Corporation | Cooling for power distribution systems |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR970005712B1 (ko) | 1994-01-11 | 1997-04-19 | 삼성전자 주식회사 | 고 열방출용 반도체 패키지 |
JP4538359B2 (ja) * | 2005-03-31 | 2010-09-08 | 株式会社日立産機システム | 電気回路モジュール |
JP4979909B2 (ja) * | 2005-08-19 | 2012-07-18 | 株式会社日立製作所 | 電力変換装置 |
JP4436843B2 (ja) * | 2007-02-07 | 2010-03-24 | 株式会社日立製作所 | 電力変換装置 |
JP5557585B2 (ja) | 2010-04-26 | 2014-07-23 | 日立オートモティブシステムズ株式会社 | パワーモジュール |
JP5588895B2 (ja) | 2011-02-28 | 2014-09-10 | 日立オートモティブシステムズ株式会社 | パワー半導体モジュール,パワー半導体モジュールの製造方法及び電力変換装置 |
JP5995417B2 (ja) | 2011-08-31 | 2016-09-21 | 日立オートモティブシステムズ株式会社 | 半導体モジュールおよびその製造方法 |
JP5690752B2 (ja) * | 2012-01-10 | 2015-03-25 | 日立オートモティブシステムズ株式会社 | パワー半導体モジュールおよびパワー半導体モジュールの製造方法 |
JP5634429B2 (ja) * | 2012-03-30 | 2014-12-03 | 日立オートモティブシステムズ株式会社 | パワー半導体モジュール |
JP5941787B2 (ja) * | 2012-08-09 | 2016-06-29 | 日立オートモティブシステムズ株式会社 | パワーモジュールおよびパワーモジュールの製造方法 |
JP5739956B2 (ja) * | 2013-09-09 | 2015-06-24 | 日立オートモティブシステムズ株式会社 | 半導体モジュールおよびこれを用いた電力変換装置 |
-
2014
- 2014-08-07 JP JP2014160942A patent/JP6286320B2/ja not_active Expired - Fee Related
-
2015
- 2015-07-01 DE DE112015003141.3T patent/DE112015003141T5/de not_active Withdrawn
- 2015-07-01 CN CN201580042025.0A patent/CN106663678B/zh not_active Expired - Fee Related
- 2015-07-01 WO PCT/JP2015/068937 patent/WO2016021341A1/ja active Application Filing
- 2015-07-01 US US15/325,310 patent/US9912248B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
DE112015003141T5 (de) | 2017-04-27 |
CN106663678B (zh) | 2019-02-26 |
WO2016021341A1 (ja) | 2016-02-11 |
CN106663678A (zh) | 2017-05-10 |
JP2016039224A (ja) | 2016-03-22 |
US20170187300A1 (en) | 2017-06-29 |
US9912248B2 (en) | 2018-03-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6286320B2 (ja) | パワーモジュール | |
JP6215151B2 (ja) | 電力変換装置 | |
JP5206822B2 (ja) | 半導体装置 | |
JP5502805B2 (ja) | パワーモジュールおよびそれを用いた電力変換装置 | |
JP6979864B2 (ja) | パワー半導体装置及びその製造方法 | |
US10177675B2 (en) | Electric power conversion device | |
WO2014083976A1 (ja) | インバータ装置 | |
JP5659938B2 (ja) | 半導体ユニットおよびそれを用いた半導体装置 | |
WO2018131301A1 (ja) | パワー半導体装置 | |
WO2019003718A1 (ja) | パワー半導体装置及びそれを用いた電力変換装置 | |
JPWO2017187781A1 (ja) | 電力変換装置 | |
JP5879292B2 (ja) | 電力変換装置 | |
WO2019142543A1 (ja) | パワー半導体装置 | |
CN108886029B (zh) | 盒体、半导体装置、盒体的制造方法 | |
JP7151638B2 (ja) | パワーモジュールの製造方法 | |
WO2017119286A1 (ja) | パワー半導体モジュール | |
JP2014187149A (ja) | パワーモジュール | |
JP7549520B2 (ja) | パワーモジュールおよび電力変換装置 | |
JP2014045014A (ja) | パワー半導体モジュール、電力変換装置、およびパワー半導体モジュールの製造方法 | |
JP7171516B2 (ja) | パワー半導体モジュール、電力変換装置およびパワー半導体モジュールの製造方法 | |
JP2022188312A (ja) | パワーモジュールおよびパワーモジュールの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20170117 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20170124 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170213 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170213 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20171024 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171127 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180109 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180205 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6286320 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |