JP5481769B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP5481769B2 JP5481769B2 JP2006315090A JP2006315090A JP5481769B2 JP 5481769 B2 JP5481769 B2 JP 5481769B2 JP 2006315090 A JP2006315090 A JP 2006315090A JP 2006315090 A JP2006315090 A JP 2006315090A JP 5481769 B2 JP5481769 B2 JP 5481769B2
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Description
この方法によれば、複数のチップ間をワイヤ接続する場合、まず第1のワイヤとして電極パターンの端子上(第1ボンディング点)からチップの上部電極上(第2ボンディング点)にウェッジボンディングする。次に、そのウェッジボンディング部の上に、第2のワイヤを重ねてボールボンディングする。
これにより、チップの上部電極上に、ボールボンディングで形成されたボールが接続されることとなり、この部分におけるワイヤの薄膜化を防止して、ワイヤボンディングの接合の強化を実現している。
本発明はこのような課題を解決するためになされたもので、半導体素子内の同極間、または、複数の半導体素子間等においてワイヤボンディングされた半導体素子を備える半導体装置であって、半導体素子の電極位置にかかわらず、ワイヤ数及び長さを低減するとともに、各接合部位における十分な接合信頼性を実現することができる半導体装置及びその製造方法を提供することを目的とする。
一方の端部が半導体発光素子の電極上の第1ボンディング点にボールボンディングされ、他方の端部が第2ボンディング点にボンディングされてなる第1のワイヤループを有する半導体装置であって、
前記第2ボンディング点は、金属部材上又はボールボンディングされた半導体発光素子の電極上に存在し、
前記第1のワイヤループは、前記第1ボンディング点のボールボンディング上面において、第2ボンディング点と反対側に第1ループ形状を有し、前記第1ループ形状の頂上部分がワイヤの一部を含めて潰された略平坦な状態であり、
半導体発光素子の電極上の第3ボンディング点にボールボンディングされ、前記第3のボンディング点と、潰された略平坦な状態の前記第1ループ形状の上面とを架橋する第2のワイヤループを有し、
前記第2のワイヤループは、前記第3ボンディング点のボールボンディング上面に第2ループ形状を有し、前記第2ループ形状の頂上部分がワイヤの一部を含めて潰された略平坦な状態であり、
第2ワイヤループは、略平坦な面上間を架橋していることを特徴とする。
また、前記第1又は第2ワイヤループのボール部の上面は、さらに第4のボンディング点と架橋する第3のワイヤループを有していてもよい。
一方の端部が半導体発光素子の電極上の第1ボンディング点にボールボンディングされ、他方の端部が第2ボンディング点にボンディングされてなる第1のワイヤループを有する半導体装置での製造方法であって、
(a)第1ボンディング点に、ワイヤの溶融により形成されたボールを圧着した後、該ボールから延長するワイヤを、金属部材上又はボールボンディングされた半導体発光素子の電極上に存在する第2ボンディング点とは逆方向に引き伸ばし、第2ボンディング点方向に前記ワイヤを引き伸ばして前記第2ボンディング点にボンディングして、前記第1ボンディング点のボールボンディング上面において、前記第2ボンディング点と反対側に第1ループ形状を形成し、かつ、前記第1ループ形状の頂上部分を、前記ワイヤの一部を含めて潰して略平坦な状態とする工程と、
(b)半導体発光素子の電極上の第3ボンディング点にボールボンディングし、前記第3ボンディング点の前記ボールボンディング上面に第2ループ形状を形成し、前記第2ループ形状の頂上部分をワイヤの一部を含めて潰された略平坦な状態として、第3ボンディング点と、前記第1ボンディング点上であって、潰された略平坦な面上間をワイヤボンディングして架橋する第2のワイヤループを形成する工程とを含むことを特徴とする。
また、前記工程(b)の後、
(c)第4ボンディング点と前記1ボンディング点または第2ボンディング点上とをワイヤボンディングする工程を有していることが好ましい。
また、本発明の半導体装置の製造方法では、上述した半導体装置を簡便な方法で確実に製造することが可能となる。
(半導体素子)
本発明で用いられる半導体素子は、半導体によって構成される素子であれば特に限定されることなく、例えば、各種トランジスタ、スイッチングダイオード、ツェナーダイオード、可変容量ダイオード、半導体発光素子などが挙げられる。なかでも、半導体発光素子の場合、基板上に、InN、AlN、GaN、InGaN、AlGaN、InGaAlN等の窒化物半導体、III−V族化合物半導体、II−VI族化合物半導体等、種々の半導体によって、半導体層を含む積層構造が形成されたものが挙げられる。
金属部材は、半導体素子と電気的に接続するための電極及び半導体素子を搭載する基板としての役割を果たすものであり、実質的に板状であればよく、波形板状、凹凸を有する板状であってもよい。その膜厚は均一であってもよいし、部分的に厚膜又は薄膜であってもよい。材料は特に限定されず、熱伝導率の比較的大きな材料(例えば、200W/(m・K)程度以上)、比較的大きい機械的強度を有するもの、あるいは打ち抜きプレス加工又はエッチング加工等が容易な材料で形成することが好ましい。このような材料で形成することにより、半導体素子で発生する熱を効率的に逃がすことができる。具体的には、銅、アルミニウム、金、銀、タングステン、鉄、ニッケル等の金属又は鉄−ニッケル合金、燐青銅等の合金等が挙げられる。また、金属部材の表面には、搭載される半導体素子からの光を効率よく取り出すために反射メッキが施されていることが好ましい。
金属部材は、半導体素子を搭載し、半導体素子と接続される領域の他に、外部と接続するリード端子として延長する領域を有していてもよい。リード端子は、本発明の半導体装置の実装タイプ(例えば、サイドビュータイプ、トップビュータイプ等)、使用態様に応じて、適宜屈曲、変形させることができる。
ワイヤは、半導体素子の表面に形成された電極と金属部材との間、半導体素子間、半導体素子内の電極間などを電気的に接続する(ボンディングする)ために用いられる導電部材である。特に、半導体素子間を接続する場合には、半導体素子の同極の電極間を接続していることが好ましい。そのため、ワイヤは、半導体素子の電極とのオーミック性が良好であるか、機械的接続性が良好であるか、電気伝導性及び熱伝導性が良好なものであることが好ましい。熱伝導率としては、0.01cal/S・cm2・℃/cm程度以上が好ましく、さらに0.5cal/S・cm2・℃/cm程度以上がより好ましい。作業性などを考慮すると、ワイヤの直径は、10μm〜45μm程度であることが好ましい。このようなワイヤの材料としては、例えば、金、銅、白金、アルミニウム等の金属及びそれらの合金が挙げられる。なかでも、接合信頼性、接合後の応力緩和等の観点から、金が好ましい。
この工程(a)を行うために、ワイヤをキャピラリ等の治具にとおし、スパーク等による高温を利用して、その先端を溶融させてワイヤによるボールを生成させる。温度は、特に限定されることなく、用いるワイヤの材料、太さ等によって調整することができる。例えば、360℃程度以下の温度が挙げられる。ボールの大きさは特に限定されることなく、通常、ワイヤの2〜20倍程度、さらに2〜10倍程度の直径とすることができる。
次いで、ワイヤを接続の終点となる点(つまり、第2ボンディング点)とは逆方向に引き伸ばすために、キャピラリを逆方向に移動させる。この場合の逆方向は、第2ボンディング点に対して、150〜210°程度の範囲が含まれる。この際の引き伸ばし量、つまりキャピラリの移動長さは、10〜100μm程度とすることが適している。
工程(a)の後、(b)第3ボンディング点と第1ボンディング点とのワイヤボンディングを行なう。さらに、工程(b)の後、(c)第4のボンディング点と前記1ボンディング点上とをワイヤボンディングする工程を有していてもよい。また、工程(b)は、前記第1のボンディング点上に、ワイヤの溶融により形成されたボールを圧着した後、このボールから延長するワイヤの別の一部をさらにこのボール上に圧着し、第3ボンディング点方向にワイヤを引き伸ばして第3ボンディング点にボンディングしていてもよい。この工程は、第1ボンディング点及び第2ボンディング点の位置が異なる以外、工程(a)とほぼ同様である。
これを実現するために、上述した、工程(a)と(b)との間に、第1の金属部材表面又は電極表面に形成された圧着ボールに対して、第1及び/又は第2ボンディング点における1つ又は複数のワイヤを接続してもよい。
また、成形/封止樹脂には、拡散剤又は蛍光物質を含有させてもよい。拡散剤は、光を拡散させるものであり、半導体素子(特に、発光素子)からの指向性を緩和させ、視野角を増大させることができる。蛍光物質は、半導体素子からの光を変換させるものであり、半導体素子から封止部材の外部へ出射される光の波長を変換することができる。半導体素子からの光がエネルギーの高い短波長の可視光の場合、有機蛍光物質であるペリレン系誘導体、ZnCdS:Cu、YAG:Ce、Eu及び/又はCrで賦活された窒素含有CaO−Al2O3−SiO2などの無機蛍光物質など、種々好適に用いられる。
実施例1
図1に示すように、この実施例の半導体装置10は、半導体素子11と、板状の金属部材12と、半導体素子11と金属部材12との間及び半導体素子11間をそれぞれ電気的に接続するワイヤ14と、これらを一体的に樹脂封止する封止樹脂15とを備えて構成されている。また、この半導体装置10には、封止樹脂15の内部において、金属部材12に電気的に接続された保護素子13がさらに搭載されている。
封止樹脂15の成形体は、金属部材12の一部を挟持して一体的に、直方体に近い形状(10×5×1mm)で成形されている。成形体は、その中央付近に、略円形(直径3mm)の半導体窓15aを有している。半導体窓15a内では、金属部材12の一部が露出しており、露出した金属部材12上に半導体素子11が搭載されている。なお、半導体窓15a内には、透光性樹脂(図示せず)が埋設されている。
ワイヤ14は、ワイヤボンディングにより、金属部材表面又は電極表面に接合されている。図2(a)に示すように、第1ボンディング部A1である半導体素子12の電極16上において、ワイヤ14の溶融により形成されたボールが電極16表面に圧着されており、この圧着ボールから延長するワイヤの別の一部がさらに圧着ボール上に圧着されており(ボール部)、第2ボンディング点B2である金属部材12の方向に延長し、金属部材12の表面に接合されている(ウェッジボンド部)。つまり、第1ボンディング部A1において、第2ボンディング部B2と反対側に、ワイヤによるループ形状が形成されており、その圧着ボール表面/頂上部分はワイヤの一部を含めて潰された状態であり、比較的平坦化された形状となっている。
続いて、そのボールを電極16表面に圧着し、接合する。この圧着点が第1ボンディング点A1となる。
次いで、図2(a)の点線矢印に従って、圧着点からキャピラリを上昇させ、ワイヤ14を繰り出し、第2ボンディング点B2とは逆方向に引き伸ばすために、キャピラリを逆方向に水平移動させる。
続いて、図2(a)の実線矢印に従って、キャピラリを上昇させて、ワイヤ14を繰り出し、第2ボンディング点B2とは逆方向にキャピラリを水平移動させ、再度上昇させてワイヤ14を繰り出し、圧着ボールの直上を通り、第2ボンディング点B2へ水平移動及び下降しながらワイヤ14を引き伸ばし、第2ボンディング点に接合する。
さらに、ワイヤボンド部の上方には、余分なワイヤが存在することなく、ワイヤ自体の長さを短くすることができるとともに、ワイヤボンド部に重ねてワイヤボンディングを行っても、ボンディング部分の高さに起因する不都合を解消することができる。
しかも、ワイヤボンド部に重ねてワイヤボンディングを行うことができるために、ワイヤボンドによる複数の接合を整理して、接合数を低減することができる。
また、生産性を向上させることができる。
さらに、ワイヤの数及び長さの低減に起因して、ワイヤ周辺における絶縁性確保のための領域及び空間を縮小することができるために、半導体装置のより小型化を実現することができる。
この結果、第2ボンディング点を半導体素子の電極表面に直接配置したため、電極の薄さに起因して安定した接合を行うことができず、さらに、電極周辺の半導体素子に損傷が見られた。
この結果、1回目のワイヤボンディングでは良好な接合を行うことができたが、2回目以降においては、パンプ電極上に、第1ボンディング点のワイヤボールが圧着されるため、その合計高さが増大し、接合状態にもばらつきが見られ、良好な接合を確保することができなかった。
また、ボール上は平坦化されていないため、第1ボンディング点の上にさらに第1及び第2ボンディング点を接続させることができなかった。
この実施例の半導体装置20は、図4に示すように、表面に電極が4つ形成された半導体素子21が2つ搭載されており、第1ボンディング点及び第2ボンディング点が、実施例1のA1〜D2に準じてA1〜H2・・・と設定されている以外、実質的に実施例1と同様の構造を有している。なお、同じ構成についてはその説明を省略している(以下の実施例でも同様)。
これにより、実施例1と同様の効果を得ることができる。
また、2つの半導体素子における4つのn電極又は4つのp電極のそれぞれに対して金属部材との配線を行わずにすみ、n電極を一連に連結することができるため、ワイヤの長さを大幅に短縮することができる。さらに、半導体素子の上方において、余分なワイヤによる空間の占有がないため、ワイヤ同士の接触を防止することができるとともに、より小型化を図ることができる。
この実施例の半導体装置30は、図5に示すように、表面に電極が2つ形成された半導体素子31が6つ搭載されており、第1ボンディング点及び第2ボンディング点が、実施例1のA1〜D2に準じてA1〜D2・・・と設定されている以外、実質的に実施例1と同様の構造を有している。
この半導体装置30では、実施例1と同様に、図2(b)に示したようなワイヤ接続が行われている。
これにより、実施例1及び実施例2と同様の効果が得られる。
この実施例の半導体装置40は、図6に示すように、表面に電極が2つ形成された半導体素子41が6つ搭載されており、第1ボンディング点及び第2ボンディング点が、実施例1のA1〜D2に準じてA1〜F2・・・と設定されている以外、実質的に実施例1と同様の構造を有している。
この半導体装置40では、実施例1と同様に、図2(b)に示したようなワイヤ接続が行われている。
これにより、実施例1及び実施例2と同様の効果が得られる。
この実施例の半導体装置50は、図7に示すように、表面に電極が2つ形成された半導体素子51が3つ搭載されており、第1ボンディング点及び第2ボンディング点が、実施例1のA1〜D2に準じてA1〜F2・・・と設定されている以外、実質的に実施例1と同様の構造を有している。
これにより、実施例1及び実施例2と同様の効果が得られる。
この実施例の半導体装置は、図9(a)に示すように、半導体素子11の電極16aと金属部材12aとの間、つまり、第1ボンディング点A1と第2ボンディング点B2との間でワイヤボンディングが行われており、さらに、図9(b)に示すように、同じ半導体素子11の同じ電極16aと別の金属部材12bとの間、つまり、第1ボンディング点C1と第2ボンディング点D2との間で別のワイヤボンディングが行われている。従って、第1ボンディング点A1及びC1では、圧着ボールが2層積層されている。そして、さらに、別の電極16b(第1ボンディング点E1)と、電極16a(第2ボンディング点F2)との間で、さらに別のワイヤボンディングが行われることにより、その2層構造の圧着ボールの表面に、第2ボンディングによるワイヤが接続されている。
このような構成においても、実施例1及び実施例2と同様の効果が得られる。
また、半導体装置のみならず、IC、メモリ等の種々の半導体装置のワイヤボンディングにおいても広く利用することができる。
11、21、31、41、51 半導体素子
12 金属部材
13 保護素子
14、83 ワイヤ
15 封止樹脂
15a 半導体窓
16、16a、16b、17、81 電極
15a、15b、15c 半導体素子
82 バンプ電極
A1、C1、E1、G1 第1ボンディング点
B2、D2、F2、H2 第2ボンディング点
Claims (11)
- 一方の端部が半導体発光素子の電極上の第1ボンディング点にボールボンディングされ、他方の端部が第2ボンディング点にボンディングされてなる第1のワイヤループを有する半導体装置であって、
前記第2ボンディング点は、金属部材上又はボールボンディングされた半導体発光素子の電極上に存在し、
前記第1のワイヤループは、前記第1ボンディング点のボールボンディング上面において、第2ボンディング点と反対側に第1ループ形状を有し、前記第1ループ形状の頂上部分がワイヤの一部を含めて潰された略平坦な状態であり、
半導体発光素子の電極上の第3ボンディング点にボールボンディングされ、前記第3のボンディング点と、潰された略平坦な状態の前記第1ループ形状の上面とを架橋する第2のワイヤループを有し、
前記第2のワイヤループは、前記第3ボンディング点のボールボンディング上面に第2ループ形状を有し、前記第2ループ形状の頂上部分がワイヤの一部を含めて潰された略平坦な状態であり、
第2ワイヤループは、略平坦な面上間を架橋していることを特徴とする半導体装置。 - 前記第1又は第2ボンディング点上のボールボンディング上面は、さらに第4ボンディング点と架橋する第3のワイヤループを有し、前記第4ボンディング点は、金属基板上又はボールボンディングされた半導体発光素子の電極上に存在する請求項1に記載の半導体装置。
- 前記ワイヤループはワイヤで形成され、該ワイヤは、熱伝導率が0.01cal/S・cm2・℃/cm以上である請求項1又は2に記載の半導体装置。
- 前記ワイヤループはワイヤで形成され、該ワイヤの直径は、10μm〜45μmである請求項1〜3のいずれか1つに記載の半導体装置。
- 前記第1又は第2ワイヤループは、ボール底面からワイヤ径の1.0〜5.0倍の高さである請求項1〜4のいずれか1つに記載の半導体装置。
- 1つの半導体発光素子に対して、少なくとも前記第1ボンディング点及び第2ボンディング点のいずれか一方が、3点以上設けられている請求項1〜5のいずれか1つに記載の半導体装置。
- 一方の端部が半導体発光素子の電極上の第1ボンディング点にボールボンディングされ、他方の端部が第2ボンディング点にボンディングされてなる第1のワイヤループを有する半導体装置での製造方法であって、
(a)第1ボンディング点に、ワイヤの溶融により形成されたボールを圧着した後、該ボールから延長するワイヤを、金属部材上又はボールボンディングされた半導体発光素子の電極上に存在する第2ボンディング点とは逆方向に引き伸ばし、第2ボンディング点方向に前記ワイヤを引き伸ばして前記第2ボンディング点にボンディングして、前記第1ボンディング点のボールボンディング上面において、前記第2ボンディング点と反対側に第1ループ形状を形成し、かつ、前記第1ループ形状の頂上部分を、前記ワイヤの一部を含めて潰して略平坦な状態とする工程と、
(b)半導体発光素子の電極上の第3ボンディング点にボールボンディングし、前記第3ボンディング点の前記ボールボンディング上面に第2ループ形状を形成し、前記第2ループ形状の頂上部分をワイヤの一部を含めて潰された略平坦な状態として、第3ボンディング点と、前記第1ボンディング点上であって、潰された略平坦な面上間をワイヤボンディングして架橋する第2のワイヤループを形成する工程とを含むことを特徴とする半導体装置の製造方法。 - 前記工程(b)の後、
(c)第4ボンディング点と前記1ボンディング点または第2ボンディング点上とをワイヤボンディングする工程を有している請求項7に記載の半導体装置の製造方法。 - 前記工程(b)は、前記第1ボンディング点上に、ワイヤの溶融により形成されたボールを圧着した後、該ボールから延長するワイヤの別の一部をさらに前記ボール上に圧着し、前記第3ボンディング点方向に前記ワイヤを引き伸ばして前記第3ボンディング点にボンディングしている請求項7又は8に記載の半導体装置の製造方法。
- 前記工程(b)は、前記第3のボンディング点上に、ワイヤの溶融により形成されたボールを圧着した後、該ボールから延長するワイヤの別の一部をさらに前記ボール上に圧着し、前記第1ボンディング点方向に前記ワイヤを引き伸ばして前記第1ボンディング点にボンディングしている請求項7又は8のいずれか1つに記載の半導体装置の製造方法。
- 前記工程(a)は、
キャピラリに通したワイヤの先端を溶融させてワイヤによるボールを生成し、該ボールを第1ボンディング点に圧着して接合する工程と、
前記第1ボンディング点からキャピラリを上昇させ、第2ボンディング点とは逆方向にキャピラリを水平移動させ、その後、キャピラリを上昇させ、ボール直上に移動させて、ボール上にキャピラリを圧着することにより、圧着ボールから延長するワイヤの別の一部を圧着ボール上に圧着させる工程と、
キャピラリを上昇させて、第2ボンディングとは逆方向にキャピラリを水平移動させ、再度上昇させて、圧着ボールの直上を通り、第2ボンディング点へ水平移動及び下降しながらワイヤを引き伸ばし、第2ボンディング点に接合する工程とを有する請求項7〜10のいずれか1つに記載の半導体装置の製造方法。
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