CN102576684B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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CN102576684B
CN102576684B CN201080045152.3A CN201080045152A CN102576684B CN 102576684 B CN102576684 B CN 102576684B CN 201080045152 A CN201080045152 A CN 201080045152A CN 102576684 B CN102576684 B CN 102576684B
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closing line
pad
reflex part
bulb
semiconductor device
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CN102576684A (zh
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濑野良太
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Nichia Chemical Industries Ltd
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Nichia Chemical Industries Ltd
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Abstract

本发明提供一种半导体装置及其制造方法，该半导体装置具备焊接有多个接合线的半导体元件，且接合线的接合强度高，并能够实现充分的接合可靠性。所述半导体装置，其特征在于，包括：第一接合线，其一端被焊接在电极上，另一端被焊接在所述电极外的第二焊接点；和第二接合线，其一端被焊接在所述电极上的所述第一接合线上，另一端被焊接在所述电极外的第三焊接点。并且，所述第二接合线的所述一端的焊接部，覆盖所述第一接合线的上面及侧面的至少一部分。

Description

半导体装置及其制造方法
技术领域
本发明涉及一种半导体装置及其制造方法，更详细地，涉及一种具备使半导体装置内部或与其它半导体元件之间被接合线接合的半导体元件的半导体装置及其制造方法。
背景技术
在使用发光二极管等半导体元件的现有半导体装置中，有一种在一个封装内搭载有多个半导体元件的半导体装置，已提出将这样的多个半导体元件间由接合线接合进行连接的方法(例如，专利文献1)。根据该方法，对多个半导体发光元件间进行接合线连接(接合线接合)时，首先，作为第一接合线从封装的电极图形的端子上楔形焊接到半导体发光元件的上部电极上。接着，在此楔形焊接部上将第二接合线重叠地进行球形焊接。由此，成为在半导体发光元件的上部电极上连接有由球形焊接所形成的球的结构，可防止该部分的接合线的薄膜化，实现接合线接合的接合强化。
另外，已提出了一种将通过球形焊接所形成的第一接合线的球颈由毛细管前端压碎，再将其上所折叠的第一接合线侧面压在压碎的球颈上，进而在其上焊接第二接合线的方法(例如，专利文献2)。根据该方法，在焊接第二接合线时，利用压在球颈的接合线的变形来缓和焊接的冲击。由此，降低了半导体受到的损伤。另外，在焊接第二接合线时，利用毛细管的按压力使第一接合线变形为进入毛细管中心孔的凸部，在进入毛细管中心孔的凸部和毛细管的内倒角部之间使第二接合线夹住地进行压缩。
专利文献1日本特开2002-353267号公报
专利文献2日本特开2009-76783号公报
在专利文献1记载的方法中，存在这样的课题，即，当在半导体元件的电极上直接进行楔形焊接时，因上述电极的膜厚较薄而得不到稳定的接合。这是因为在电极的膜厚较薄的情况下，由于焊接时施加的负荷的作用，而使半导体损坏之虞存在。此外，在形成该半导体元件的半导体层的一面侧具有正负双方电极的类型的半导体元件的情况，由于一电极面的高度低于发光元件表面的高度，所以当在上述一电极面上进行上述楔形焊接时，由毛细管的前端部对半导体元件的阶梯表面造成损伤这样的不良情况会产生。另外，在专利文献1记载的方法中，从楔形焊接部上重叠而进行球形焊接。因此，接合线的楔形焊接部和半导体元件表面的间隔变窄，在楔形焊接部和半导体元件之间，周边部件等的散热效率降低这样的问题存在。
在专利文献2记载的方法中，由于毛细管的中心为使接合线材料被供给的部分，因此，在焊接第二接合线时不能通过毛细管的中心进行按压。因此，就第二接合线而言，由于成为在球颈的周边部之上被接合的状态，所以不能确保良好的接合状态之虞存在。另外，就上述凸部周边的第一接合线而言，由于在毛细管的面部和球部之间被压缩，成为被压碎得很薄的状态，因此，在该部位接合线容易断线这样的问题存在。
发明内容
于是，本发明的目的在于提供一种具备多个焊接有接合线的半导体元件的半导体装置，尤其提供接合线的接合强度高、且能够实现充分的接合可靠性的半导体装置及其制造方法。
本发明涉及一种半导体装置，该半导体装置包含：第一接合线，其一端被焊接在电极上，另一端被焊接在上述电极外的第二焊接点；第二接合线，其一端被焊接在电极上的第一接合线上，另一端被焊接在该电极外的第三焊接点，并且第二接合线的一端的焊接部覆盖第一接合线的上面及侧面的至少一部分。根据该结构，不管半导体元件的电极位置，都能够减少接合线数及长度，并且，能够确保接合线的充分的接合面积，因此，能够提高接合线的接合强度。
另外，优选的是，第一接合线具有：一端被焊接在上述电极上的球部；从该球部向与第二焊接点不同的方向延伸后在上述球部上折回的折回部，第二接合线的一端被焊接在上述折回部上，且第二接合线覆盖折回部的与第二焊接点相反侧的侧面的至少一部分。
根据该结构能够进一步提高接合线的接合强度。
另外，优选的是，折回部具有：从球部上向与接合线的延伸方向相反方向引出的下部、和从下部伸出的接合线在球部上被折回而成的上部，第二接合线的前端，至少覆盖第二接合线的延伸方向相反侧的折回部的下部。根据该结构，能够提高接合线的接合强度。
优选的是，第二接合线的前端至少覆盖球部。另外，优选的是，第二接合线的前端至少覆盖球部。根据该结构，能够提高接合线的接合强度。
优选的是，第二接合线在第二接合线的延伸方向侧的折回部上以大致水平的方式设置。根据该结构，能够降低接合线上的应力，因此，能够防止接合线的断线等。
另外，本发明涉及一种半导体装置的制造方法，具有：在电极上焊接第一接合线而形成球部，且在球部上形成折回部，从折回部向规定的方向使其延伸的第一工序；以及在折回部上对第二接合线进行焊接的第二工序，在第二工序中，至少在比折回部的中心(图4(c)中的虚线)更靠与第二接合线延伸的方相反侧对第二接合线施加外力而将其压碎，且使其接合在折回部上。根据该结构，由于能够确保接合线的充分的接合面积，因此，能够实现接合线的充分的接合可靠性。
优选的是，折回部具有从球部上向与接合线的延伸方向相反方向拉出的下部、和从该下部延伸的接合线向上述球部上被折回而形成的上部，使上述第二接合线的压碎部分至少接合在与上述第二接合线的延伸方向相反侧的上述折回部的下部。根据该结构，由于能够确保充分的接合面积，因此，能够提高接合线的接合强度。
另外，优选的是，折回部具有从球部上向与接合线的延伸方向相反方向拉出的下部、和从下部延伸的接合线向球部上被折回而形成的上部，使第二接合线的前端至少接合在与第二接合线的延伸方向相反侧的折回部的下部。根据该结构，能够提高接合线的接合强度。
优选的是，使第二接合线的压碎部分至少接合在球部。根据该结构，能够提高接合线的接合强度。
优选的是，第二接合线在第二接合线的延伸方向侧的折回部上以大致水平的方式设置。根据该结构，由于能够降低施加在接合线上的应力，因此，能够防止接合线的断线等。
另外，本发明涉及一种半导体元件的制造方法，具有在电极上球形焊接第一接合线的第一工序、和在第一接合线的球部上焊接第二接合线的第二工序，并且在第二工序中，第二接合线按照覆盖第一接合线的球部的中心点(图4(c)的虚线)上的方式被焊接。根据该结构，能够确保接合线的充分的接合强度。
根据本发明，能够提供一种半导体装置及其制造方法，所半导体装置具备焊接有多根接合线的半导体元件，不管半导体元件的电极位置，都能够减少接合线数及其长度，并且，接合线的接合强度高，能够实现充分的接合可靠性。
附图说明
图1是表示本发明实施方式的半导体装置的概略平面图；
图2是表示本发明实施方式的半导体装置的接合线接合的概略立体图；
图3是用于说明从图1的y轴方向看到的接合线接合的概略工序图；
图4是用于说明从图1的x轴方向看到的接合线接合的概略工序图；
图5是用于说明本发明实施方式的半导体装置的接合线接合的概略侧面图；
图6是表示本发明的实施方式的半导体装置的变形例的概略平面图；
图7是用于说明比较例的半导体装置的接合线接合的概略立体图；
图8是用于说明接合线的强度试验的平面图；
图9是表示折回部的详细的剖面图；
图10是表示在第一接合线的折回部上所焊接的第二接合线的详细的剖面图。
具体实施方式
下面，参照附图对用于实施本发明的方式(以下称为“实施方式”)进行详细说明。但是，本发明并不限定于此实施方式。
图1是表示本发明实施方式的半导体装置10的概略平面图。图2是表示本发明实施方式的半导体装置10的接合线接合的概略立体图。图5是用于说明本发明实施方式的半导体装置10的接合线接合的概略侧面图。
本实施方式的半导体装置10，按照至少包含半导体元件11和接合线的方式构成。通常，接合线将半导体元件11间或金属部件12和半导体元件11之间进行连接。接合线至少具有第一接合线14和第二接合线15。
第一接合线14具有通过在半导体元件11的电极16上球形焊接所形成的球部141、和在球部141上形成的折回部142，并且从其折回部142向规定的方向延伸地形成。第二接合线15被焊接在第一接合线的折回部上。第二接合线的前端覆盖与第二接合线的延伸方向相反侧的折回部(第一接合线14的折回部142的侧面的、且与第二接合线15的延伸方向相反侧的侧面的至少一部分，被第二接合线15的前端部覆盖)。由此，能够确保接合线的充分接合状态。
优选的是，第二接合线的前端至少覆盖球部(球部141的至少一部分)。由此，能够提高接合线的接合强度。
作为优选，本实施方式的半导体装置中，半导体元件、接合线及金属部件等被一体地由树脂成型或密封。就成型树脂而言，只要对于半导体元件等能够确保绝缘性，用什么样的材料形成都可以。另外，就密封树脂而言，只要对于半导体元件等能够确保绝缘性且具有透光性，用什么样的材料形成都可以。成型或密封树脂的大小及形状没有特别限定。
下面，对各构成部件进行详述。
(半导体元件)
本发明中使用的半导体元件是由半导体层叠所形成的元件，只要是接合线被焊接在电极上的元件，就不作特别限定。
本发明所使用的半导体元件可以是在半导体层的对向的面(例如上面和下面)上分别形成正及负的电极，也可以是在半导体层的同一面侧使正及负的电极均形成。在后者的情况下的一对电极，通常具有高低差，但也可以按照通过调节凸起等的高度而成为相同高度(距半导体层大致相同的距离)的方式配置。在具有高低差时，就直接在电极上进行楔形焊接而言，由于接合线和电极的接合面积比在由球形焊接进行接合时的球部和电极的接合面积小，因此接合状态差、因向小片(dice)的毛细管接触所引起的损伤产生，所以本发明的效果更明显地体现出来。另外，该情况下的正及负的电极未必各形成一个，也可以分别形成两个以上。
电极16在其材料、膜厚、构造方面没有特别地限定，但根据后述的接合线的种类，可以是金、铜、铅、铝或包含它们的合金的单层构造、层叠构造的任意一种。电极的膜厚没有特别限定，但优选其中最终层(最表面侧)配置Au，其膜厚为100nm程度以上。在该电极的最终层即最表面层上焊接有接合线。
在半导体装置中，就半导体元件而言，在一个半导体装置中可以仅搭载一个，也可以搭载多个。在搭载有多个半导体元件的情况下，这些半导体元件可以是并联、串联或串并联的组合等，连接方式不作特别限定。
(金属部件)
金属部件起到作为用于与半导体元件电连接的电极及搭载半导体元件的基板的作用，实质上是板状即可，也可以是波形板状、具有凹凸的板状。其膜厚既可以是均匀的，也可以局部地为厚膜或薄膜。材料不作特别限定，优选用热传导率比较大的材料(例如，200W/(m·K)程度以上)、具有比较大的机械强度的材料、或者冲压加工或蚀刻加工等容易的材料形成。通过用这样的材料形成，能够有效地释放半导体元件产生的热。具体地，可以举出铜、铝、金、银、钨、铁、镍等金属或铁-镍合金、磷青铜等的合金等。另外，为了高效地取出来自搭载的半导体元件的光，优选对金属部件的表面实施反射电镀。
就金属部件而言，通常在一个半导体装置中具备两根以上。另外，半导体元件的数为+1根以上也可以。
就金属部件而言，除具有搭载半导体元件且与半导体元件连接的区域外，还可以具有作为与外部连接的引线端子而延长(延伸)的区域。引线端子能够按照本发明的半导体装置的安装类型(例如，发光面垂直于引线端子的安装面的类型侧视类型、发光面平行于引线端子的安装面的类型顶视类型等)、使用形式，适当进行弯曲、变形。
在半导体装置中，优选按照第一接合线的延伸方向和第二接合线的延伸方向所成的角度为45度～135度的范围的方式，配置半导体元件及金属部件。由此，第二接合线在第一接合线的折回部的上面及侧面、即遍及不同的两个面被更可靠地接合，因此能够显著提高接合强度。
(接合线)
就接合线而言，其是为了将在半导体元件的表面所形成的电极和金属部件之间、半导体元件间、半导体元件内的电极间等进行电连接(焊接)而使用的导电部件。
在本发明中，在两个点间的接合线中，将作为始点而接合的点称为第一焊接点，将作为终点而接着连接的点称为第二焊接点。
就第一焊接点而言，在半导体元件的电极上焊接有由接合线熔化所形成的球。将这样所球形焊接的接合线的连接部分称为球部。球只要是球状的球、或一部分缺口的球、椭圆球状即可。
另外，就球部而言，在暂时成形为这些形状后、由例如在上部连接第二接合线时的按压力而变形的形态也包含在内。
另外，在第二焊接点中，接合线在不经由球的状态下被连接。将该第二焊接点中的接合线的连接部分称为楔形接合部144。另外，优选将第二焊接点(或楔形接合部)按照与金属部件接触的方式配置在金属部件的正上方。另外，就第二焊接点而言，在半导体元件的电极上配置的情况下，优选至少经由球部来配置，并且优选按照与半导体元件的电极接触的方式不直接连接楔形接合部。
所谓焊接点，通常是指半导体元件的电极表面或构成半导体装置的金属部件表面的一部分区域，但在形成有多个接合线的情况(例如，被焊接的接合线上还焊接有其它的接合线的情况)，也包含被焊接的区域，例如接合线上或球部上。
在本发明中，接合线至少具有第一接合线和第二接合线。第一接合线意思是连接第一焊接点和第二焊接点的接合线。另外，第二接合线意思是将在与通过第一焊接点及第二焊接点这两点的直线上不同的位置所配置的第三焊接点和第一接合线的球部上的接合线加以连接。这样的第一及第二接合线所对应的焊接点在一个半导体装置中可以形成多个。
如上所述，第一接合线14具有在半导体元件的电极上所球形焊接的球部141、并且在球部上具有折回部142。
图9是表示折回部142的详细的剖面图。图9中，省略了第二接合线15的记载，以便容易地理解折回部142的详细情况。
球部141的直径可根据半导体装置及其所搭载的电极的大小来适当地调节，例如为50μm～100μm左右。就折回部142而言，从球部141上起在接合线的延伸方向(有成为接合线终点的点即第二焊接点的方向)的相反方向引出接合线，进一步在成为接合线终点的点的方向折回，所折回的接合线压在球部141上，由此形成折回部142。
在此，将折回部142内、从球部141上在接合线的延伸方向的相反方向所引出的部分作为折回部的下部142a，将从折回部的下部142a延伸的接合线折回到球部141上的部分作为折回部的上部142b。即，在折回部的下部142b上折回部的上部142以与折回部的下部142b相接触(接合)的方式被配置。
优选的是，就折回部的上部142b而言，在其上面具备平坦部。图9所示的实施方式中，具有由椭圆A及椭圆B表示的两个平坦部。平坦部相对于形成有球部141的电极16的表面，具有30°以下的角度。例如由椭圆A表示的平坦部具有5°左右的角度，由椭圆B表示的角度具有20～30°左右的角度。另外，平坦部的倾斜方向(图9中向右上方向，或向左上方向)可以为任意方向。
优选的是，折回部142从球部141上向接合线的延伸方向的相反方向(与第二焊接点相对的方向)突出。即，优选的是，折回部142的水平方向的长度比球部141的半径长。由此，能够提高在折回部142上所接合的第二接合线的接合强度。优选的是，就折回部142而言，从球部141的中心点在接合线的延伸方向的相反方向具有30μm～100μm程度的长度。
从折回部142起、朝向成为接合线终点的点的方向而接合线大致水平地延伸。在此，大致水平是指相对于与球形焊接有接合线的面(例如电极表面)而为大致平行。就该情况下的大致水平而言，包含相对于球形焊接有接合线的面而接合线的轴所成的角度在30°以内的范围。
另外，优选的是，在自接合线的折回部142延伸的接合线与球部141的周边部之间设有空隙31。由此，能够确保充分的接合状态，并且，成为散热良好的状态。在该空隙31的部分，也可以存在密封树脂。
就第二接合线而言，其一侧被焊接在第三焊接点，另一侧被焊接在第一接合线的折回部142上。在第三焊接点为半导体元件的电极的情况下，优选的是具有在第三焊接点所球形焊接的球部。
图10是表示在第一接合线的折回部142上所焊接的第二接合线15的详细的剖面图。第一接合线从折回部142沿与图纸垂直的方向延伸。
这样，通过在半导体元件的电极16的表面经由第一接合线的球部141而形成第二接合线15，而使最下层的球部141相对于金属部件或电极16的表面(特别是电极16的表面)作为衬底(下地)起作用(介设于金属部件或电极表面与第二接合线之间)，因此，能够有效地防止在接合线接合时的接合不良及半导体元件的损伤等。
第三焊接点配置在与通过第一焊接点及第二焊接点这两点的直线上不同的位置。即，第二接合线与第一接合线的延伸方向相交叉。
第二接合线15按照覆盖在第一接合线的球部141的中心点上的方式(位于球部141的中心点的上部的方式)被接合于第一接合线的折回部142。另外，第二接合线15的前端沿着折回部延伸、且覆盖第二接合线的延伸方向的相反侧的折回部(覆盖折回部142的第三焊接点的相反侧的侧面(图10中的折回部142的左侧的侧面)的至少一部分)。该情况下，如图5所示，优选的是，第二接合线15的前端以覆盖折回部142的下部142a的侧面的至少一部分的方式被接合。由此，能够提高接合线的折回部附近的接合强度。另外，第二接合线的前端也可以按照覆盖第一接合线的球部(球部141的至少一部分)的方式被接合。由此，能够进一步提高接合线的折回部附近的接合强度。
另外，这种通过第二接合线15覆盖第一接合线14的侧面(优选第二接合线延伸的方向的相反侧的侧面)的至少一部分所带来的第一接合线和第二接合线的接合强度的强化，也可适用于未形成有折回部142的第一接合线的焊接部(与电极16的焊接部)和第二接合线的接合。即，在第二接合线的与第一接合线的焊接部(接合部)，第二接合线的焊接部不仅覆盖第一接合线的上面而且覆盖第一接合线的侧面(优选第二接合线延伸的方向的相反侧的侧面)的至少一部分的实施方式，无论有没有折回部142，都包含在本申请发明中。
优选的是，第二接合线15在第二接合线的延伸方向侧的与折回部之间设有空隙32。另外，优选的是，第二接合线在第二接合线的延伸方向侧的折回部上大致水平地设置，例如如图10所示，相对于电极16的表面设于30°以内。由此，能够减少在接合线上所施加的应力，因此，能够防止接合线的断线等。
就接合线而言，优选的是，与半导体元件的电极的欧姆性良好、机械连接性良好、电传导性及热传导性良好。作为热传导率，优选为0.01cal/(S)(cm2)(℃/cm)程度以上，更优选为0.5cal/(S)(cm2)(℃/cm)程度以上。如果考虑作业性等，接合线的直径优选为10μm～45μm程度。作为这种接合线的材料，例如可以举出金、铜、铂、铝等金属及它们的合金。其中，基于接合可靠性、接合后的应力缓和等观点，优选金。
(制造方法)
图3是用于说明本发明实施方式的半导体装置的接合线接合的概略工序图，是从图1的y轴方向看到的概略工序图。图4是用于说明本发明实施方式的半导体装置的接合线接合的概略工序图，是从图1的x轴方向看到的概略工序图。
本实施方式的半导体装置的制造方法具有：将第一接合线球形焊接在半导体元件的电极上的第一工序(图3)；和将第二接合线焊接在第一接合线的球部上的第二工序(图4)。
作为为了实现本实施方式的接合线连接而使用的接合线接合法，没有特别的限定，但通常可以恰当地利用热压接接合线接合、超声波并用热压接接合线接合等。
下面，对各工序进行详述。
(第一工序)
在第一焊接点即半导体元件的电极上，压接由接合线的熔化所形成的球。将从该压接球延长的接合线进一步压接在上述压接球上，向第二焊接点的方向拉伸上述接合线，并与第二焊接点连接。
该第一工序中，首先将接合线穿过毛细管等夹具，且利用由瞬间放电等产生的高温，而使其前端熔化以生成由接合线所产生的球。温度不作特别限定，可根据使用的接合线的材料、粗细等进行调节。例如，可以举出360℃程度以下的温度。球的大小不作特别限定，通常可以设定为接合线直径的2～20倍程度，进而可设定为2～10倍程度的直径。
接着，将该球压接在金属部件或电极表面而形成球部。在本发明中，如上所述，该压接点成为第一焊接点。此时的负荷例如能够考虑金属部件或电极表面的球的直径的扩展而进行适当调节。另外，此时也可以边施加超声波边进行压接。
接着，为了向成为第一接合线的延伸方向的点(即第二焊接点)的相反方向拉伸，使毛细管向相反方向移动。这时的相反方向包含相对于存在第二焊接点的方向150～210°程度的范围。此时的拉伸量也就是毛细管的移动长度，优选为10～100μm程度。
此后，通过使毛细管任意上升且向上述球部的正上方移动、然后再下降，而使毛细管压接在上述球部上。由此，从球部延长的第一接合线在上述球部上被折回并被压接。其结果，能够在上述球部上形成折回部，且使折回部的表面及位于其附近的接合线的表面大致平坦。该情况下，也可以边施加超声波边进行压接，但优选的是不施加超声波而进行压接。这是因为由于超声波的施加，接合线被挤压变细，会导致接合可靠性的下降。另外，通过在压接球上将接合线的另一部分压接，而使接合线向上方向的延伸(占有的空间)减少，例如，距压接球底面为接合线直径的1.0～5.0倍程度的高度，从其它观点来看，可抑制在压接球的1倍至3倍程度以内的高度。
接着，将接合线从上述压接球的正上方、向位于与上述第一焊接点不同的位置的第二焊接点拉伸，并与第二焊接点接合。该情况的接合能够边施加超声波或不施加超声波而进行接合。
(第二工序)
第一工序后，在第一接合线的折回部142上焊接第二接合线。此时，至少在比第一接合线的折回部142的中心更靠第二接合线的延伸方向的相反侧(图4的左方向)，对第二接合线施加外力并压碎，使其与折回部接合。
第二接合线被球形焊接在第三焊接点上后，也可以向第一焊接点的方向拉伸并焊接在第一焊接点上。
该第二工序中，首先与第一工序相同，使穿过毛细管等夹具的接合线的前端熔化而使球生成。
接着，将该球压接在金属部件或电极表面而形成球部(图4(a))。在本发明中，如上所述，该压接点成为第三焊接点。此时的负荷例如可以考虑金属部件或电极表面的球的直径的扩展而进行适当调节。另外，此时，也可以边施加超声波边进行压接。另外，也可以和第一工序相同，在第二接合线的球部上形成折回部，在该折回部的表面及位于其附近的接合线的表面形成平坦部(图4(b))。
接着，使毛细管从第三焊接点上向第一接合线的折回部上移动。此时，优选将毛细管的中心(图4(c)中的单点划线)，从第一接合线的球部的中心点(图4(c)中的虚线)的正上方、向与第二接合线的延伸方向(具有第三焊接点的方向)的相反方向偏移。该情况的相反方向包含从第一接合线的球部的中心点相对于第三焊接点为150～210°程度的范围。这样，在使毛细管移动到第一接合线的折回部上的状态中、从第一接合线的球部的中心点到毛细管的中心的水平方向的距离L，被称为毛细管的位移量。该情况下，毛细管的位移量优选设为30～50μm程度。
接着，通过使毛细管下降，使毛细管压接在第一接合线的折回部142上，并对第二接合线进行焊接。通过这样在使毛细管的中心偏移的状态下进行压接，能够相对位于第一接合线的球部的中心点上的折回部将毛细管50的面部51推压，因此，能够防止在折回部的周边部施加过多的负荷。另外，当使毛细管50压接在第一接合线的折回部142上时，在毛细管和第一接合线的折回部之间所夹住的第二接合线被压碎，截面积变小。而且，第二接合线15在截面积变小的部分被切断。如上所述，由于在使毛细管的中心向与第二接合线的延伸方向相反方向偏移的状态下进行压接，因此，第二接合线按照覆盖第一接合线的折回部的中心点(中心)上的方式被接合，第二接合线的切断面156优选在比第一接合线的球部的中心更靠第二接合线的延伸方向的相反侧被形成。
另外，切断面意思是为了将由于焊接而被压碎的接合线15和毛细管50内的接合线15相分离而进行切断时产生的面。
另外，由于被压碎的第二接合线的前端(或前端附近)以覆盖第二接合线的延伸方向的相反侧的第一接合线的折回部的状态(覆盖折回部142的侧面、即与第三焊接点相反侧的侧面的至少一部分的状态)被接合，因此，能够提高第二接合线的接合强度。该焊接时的负载优选为40～80gf。由此，能够确保良好的接合状态。另外，使毛细管压接时，也可以通过使毛细管进一步下降，来向第一接合线的折回部142推压第二接合线的前端部分。由此，能够进一步提高接合线的接合强度。另外也可以将第二接合线的压碎部分接合在第二接合线的延伸方向的相反侧的球部(球部141的侧面、第三焊接点的相反侧的侧面)。
另外，当在毛细管的中心位于第一接合线的球部的中心点上的状态、即毛细管的位移量为0的状态下进行焊接时，由于毛细管的中心是供给有接合线材料的部分，因此，不能利用毛细管推压球部的中心。另外，由于在球部的周边部上施加毛细管的压力，例如图7所示，会成为接合线被推压在球部的周边部上的状态，而本申请发明中可回避这样的状态。
在本发明的半导体装置中，虽然在互不相同的任意两点间可两次以上应用从上述球部的生成到向第二焊接点的接合为止的一连串方法，但优选按照所搭载的半导体元件的数目、半导体元件的电极的形态、半导体元件的连接形态等，进行三次、四次、甚至其以上的一连串方法。另外，从其它观点出发，优选对于一个半导体元件，将第一焊接点和/或第二焊接点总计设定三点以上，更优选分别各设定两点以上。该情况下，也可以在一个焊接点上的接合线的球部上，连接两根以上的从其它焊接点延伸的接合线。
在本发明的半导体装置中，第一接合线的延伸方向与第二接合线的延伸方向所成的角度，能够按照半导体装置的大小、半导体元件的电极及金属部件的位置进行适当地变更。另外，如图6所示，在半导体装置内，也可以在局部具有使两根以上的接合线连接在一条直线上的部位。
下面，根据附图详细说明本发明的半导体装置的实施例。
实施例
图6是表示本实施例的半导体装置的概略平面图。图3及图4是用于说明本实施例的半导体装置的接合线接合的概略剖面工序图。
如图6所示，该实施例的半导体装置10具备半导体元件11、板状的金属部件12、将半导体元件11和金属部件12之间及半导体元件11间分别电连接的接合线、将它们一体地进行树脂密封的成型体19而构成。在该半导体装置10中还搭载有与金属部件12电连接的保护元件13。
金属部件12是由铝合金制成的板状体，且具备搭载半导体元件11的区域、和从此处向一方向延长的区域。
成型体19夹持金属部件12的一部分而一体地以接近长方体的形状(纵3.5mm×横3.5mm×高0.85mm)而成型。就成型体而言，在其中央附近具有大致圆角四边形(纵2.9mm×横2.9mm)的窗部19a。在窗部19a内，露出金属部件12的一部分，在露出的金属部件12上搭载有半导体元件11。另外，在窗部19a内，埋设有具有透光性的密封树脂18。
半导体元件11在其表面形成有两个电极，各电极利用接合线分别与金属部件12或其它电极电连接。
就接合线而言，通过接合线接合而被接合在金属部件表面或电极表面。在第一焊接部(第一焊接点)即半导体元件11的电极上，由接合线熔化所形成的球被压接在电极16的表面(球部141)，自该压接球延长(延伸)的接合线进一步在压接球上折回(折回部142)，向作为第二焊接点的金属部件12的方向延长(延伸)，且被接合在金属部件12的表面(楔形接合部)。也就是说，在第一焊接点P1中，在第二焊接点的相反侧形成由接合线形成的环形状，其折回部的表面/顶上部分是包含接合线的一部分而被弄碎的状态，成为比较平坦化的形状。
就该第一接合线14的接合而言，首先，将接合线穿过毛细管，利用由瞬间放电产生的高温，使其前端熔化而使由接合线所产生的球生成。
接着，将该球压接接合在电极表面(图3(a))。该压接点成为第一焊接点。接合线使用直径为25μm的，球141的直径设定为701μm。
接着，按照图3(a)的箭头，从压接点使毛细管50上升，放出接合线，为了向第二焊接点的相反方向拉伸，使毛细管向相反方向移动(图3(b))。
此后，使毛细管50上升(图3(c))，移动到球的正上方并放出接合线，将毛细管压接在球上(图3(d))。由此，自压接球延长的(连接的)接合线(第一接合线14)的另一部分在球上被折回，该折回部的表面及位于其附近的接合线变得大致平坦(图3(e))。
接着，按照图3(e)的箭头，使毛细管(未图示)上升并放出接合线，使毛细管向第二焊接点的相反方向水平移动，再次使其上升并放出接合线，通过压接球的正上方而向第二焊接点水平移动并且边下降边拉伸接合线，与第二焊接点接合。由此，形成跨接第一焊接点和第二焊接点的第一接合线14。
在该半导体装置中，在电极16的第一焊接点P1上设有将该电极16和另一电极17(第三焊接点P3)之间进行电连接的第二接合线15。第二接合线15与第一接合线14的延伸方向相交叉。
就该第二接合线15的接合而言，和接合第一接合线14的工序一样，首先，使在毛细管等夹具中通过的接合线的前端熔化而使球生成。
接着，将该球压接在金属部件或电极表面而形成球部(图4(a))。该压接点成为第三焊接点。和第一接合线一样，也可以在第二接合线的球部上形成折回部，在该折回部的表面及位于其附近的接合线的表面形成平坦部(图4(b))。
接着，使毛细管从第三焊接点上向第一接合线的折回部上移动。此时，使毛细管的中心(图4(c)中的一点划线)从第一接合线的球部的中心点(图4(c)中的虚线)的正上方移动到向第二接合线的延伸方向(具有第三焊接点的方向)的相反方向偏移的位置。
接着，通过使毛细管下降，使毛细管压接在第一接合线的折回部上，焊接第二接合线(图4(d))。当将毛细管压接在第一接合线的折回部上时，在毛细管和第一接合线的折回部之间所夹住的第二接合线被压碎，截面积变小。而且，第二接合线在截面积变小的部分被切断(图4(e))。
在本实施例中，将第二接合线15向第一接合线14的球部上接合时，将毛细管的位移量设定为40μm，利用40gf的负荷进行焊接。
在这样构成的半导体装置10中，第二接合线15接合在第一接合线14的折回部142上，另外，第二接合线15的前端覆盖第二接合线的延伸方向的相反侧的折回部142。
在本实施例的半导体装置10中，能够使接合线的接合状态成为良好的状态。
比较例
图7是将比较例的半导体装置的一部分放大后的概略剖面图。
在将第二接合线25向第一接合线24上焊接时，以毛细管的中心位于第一接合线24的球部241的中心点上的状态、即毛细管的位移量设定为0而进行焊接，除此变更以外，用实质上和实施例1相同的制造方法制作相同的半导体装置。
其结果，第二接合线25成为被接合在处于第二接合线的延伸方向侧的第一接合线的折回部的周边部的状态。
比较例的半导体装置与实施例1的半导体装置相比较，在可靠性试验中存在接合线容易断线的趋势。
制作和实施例及比较例一样的半导体装置各十个，拉伸各自的第二接合线进行强度试验，调查接合线断裂时的负荷(gf)和断裂的部位。将其结果示于表1。另外，在表1中，由A、B符号所示的部分表示在图8所示的A、B部分断裂的部位。各符号如下。
A：第二接合线的折回部附近
B：第二接合线的前端附近
另外，在图8中，附带X符号而表示的部分，表示在进行强度试验时拉伸接合线的位置。
表1
实施例的强度试验的平均值约为9.04gf。另外，就实施例的半导体装置而言，其十个均未在第二接合线的前端附近(B)断线，而在第二接合线的折回部附近(A)断线。另一方面，比较例的强度试验的平均值约为7.46gf。并且，就比较例的半导体装置而言，其十个中的九个在第二接合线的前端附近(B)断线。
从该结果可以确认，由于实施例的半导体装置未在第二接合线的前端附近(B)断线，因此，第一接合线和第二接合线的接合强度高。
另外，可以确认实施例的半导体装置的接合线的接合强度比比较例的半导体装置更高。
产业上的可利用性
就本发明的半导体装置而言，通过搭载半导体元件，不仅能用于传真机、复印机、人工扫描仪等图像读取装置中所使用的照明装置，还能用于照明用光源、LED显示器、移动电话机等的背光光源、信号机、照明式开关、车载用刹车灯、各种传感器及各种指示器等各种各样的照明装置。
另外，不仅在半导体装置中，而且在IC、存储器等各种半导体装置的接合线接合中也能够广泛地适用。
符号说明
10半导体装置
11、21半导体元件
12金属部件
13保护元件
14、24第一接合线
141、241第一接合线的球部
142、242第一接合线的折回部
142a折回部的下部
142b折回部的上部
144楔形接合部
15、25第二接合线
151第一接合线的球部
152第一接合线的折回部
16、17、26电极
18密封树脂
19成型体
19a  窗部
50毛细管
51表面部

Claims (16)

1.一种半导体装置，其特征在于，
包含：
第一接合线，其一端被焊接在电极上，另一端被焊接在所述电极外的第二焊接点；
第二接合线，其一端被焊接在所述电极上的所述第一接合线上，另一端被焊接在所述电极外的第三焊接点，
并且，所述第二接合线的所述一端的焊接部覆盖从所述第二焊接点向所述电极延伸的所述第一接合线的上面及侧面的至少一部分，
所述第二接合线从所述第三焊接点向所述焊接部延伸的方向，与所述第一接合线从所述第二焊接点向所述电极延伸的方向交叉，
所述第一接合线的所述一端形成被焊接在所述电极上的球部，所述第一接合线具有折回部，所述折回部具有：从所述球部上向与所述第二焊接点相反方向所延伸的折回下部；和在该折回下部上所配置的、且在所述球部上折回的折回上部，
所述第二接合线的所述一端被焊接于所述折回部，且覆盖所述折回部的与所述第三焊接点相反侧的侧面的至少一部分。
2.如权利要求1所述的半导体装置，其特征在于，
所述第二接合线的所述一端覆盖所述折回下部的与所述第三焊接点相反侧的侧面的至少一部分。
3.如权利要求1所述的半导体装置，其特征在于，
所述第二接合线的所述一端覆盖所述球部的至少一部分。
4.如权利要求2所述的半导体装置，其特征在于，
所述第二接合线的所述一端覆盖所述球部的至少一部分。
5.如权利要求1所述的半导体装置，其特征在于，
所述第二接合线在所述折回部上以大致水平的方式被配置。
6.如权利要求2所述的半导体装置，其特征在于，
所述第二接合线在所述折回部上以大致水平的方式被配置。
7.如权利要求3所述的半导体装置，其特征在于，
所述第二接合线在所述折回部上以大致水平的方式被配置。
8.如权利要求4所述的半导体装置，其特征在于，
所述第二接合线在所述折回部上以大致水平的方式被配置。
9.一种半导体装置的制造方法，其特征在于，包括以下工序：
是将第一接合线的一端进行焊接而在电极上形成球部、将所述第一接合线的另一端在所述电极外的第二焊接点进行焊接的工序，该工序中通过设置使所述第一接合线从所述球部上向与所述第二焊接点相反方向所延伸的折回下部、和在该折回下部上所接合的从所述相反方向在所述球部上所延伸的折回上部，而形成折回部；
是将第二接合线的一端焊接在所述折回部上、将所述第二接合线的另一端焊接在所述电极外的第三焊接点的工序，该工序中在比所述折回部的中心更靠所述第三焊接点的相反侧使所述第二接合线变形，且使所述第二接合线的端部覆盖所述折回部的与所述第三焊接点相反侧的侧面的至少一部分，并且所述第二接合线从所述第三焊接点向所述焊接部延伸的方向与所述第一接合线从所述第二焊接点向所述电极延伸的方向交叉。
10.如权利要求9所述的半导体装置的制造方法，其特征在于，
在所述第二接合线的焊接工序中，利用所述第二接合线的所述变形，所述第二接合线的前端覆盖所述折回下部的与所述第二焊接点相反侧的侧面的至少一部分。
11.如权利要求9所述的半导体装置的制造方法，其特征在于，
使所述第二接合线通过所述变形而与所述球部的至少一部分接合。
12.如权利要求10所述的半导体装置的制造方法，其特征在于，
使所述第二接合线通过所述变形而与所述球部的至少一部分接合。
13.如权利要求9所述的半导体装置的制造方法，其特征在于，
所述第二接合线在所述折回部上以大致水平的方式接合。
14.如权利要求10所述的半导体装置的制造方法，其特征在于，
所述第二接合线在所述折回部上以大致水平的方式接合。
15.如权利要求11所述的半导体装置的制造方法，其特征在于，
所述第二接合线在所述折回部上以大致水平的方式接合。
16.如权利要求12所述的半导体装置的制造方法，其特征在于，
所述第二接合线在所述折回部上以大致水平的方式接合。
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