JP3923379B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP3923379B2
JP3923379B2 JP2002182099A JP2002182099A JP3923379B2 JP 3923379 B2 JP3923379 B2 JP 3923379B2 JP 2002182099 A JP2002182099 A JP 2002182099A JP 2002182099 A JP2002182099 A JP 2002182099A JP 3923379 B2 JP3923379 B2 JP 3923379B2
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Japan
Prior art keywords
wire
semiconductor chip
pad
lead terminal
ball
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Expired - Fee Related
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JP2002182099A
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JP2004031451A5 (ja
JP2004031451A (ja
Inventor
和子 鳴瀧
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Renesas Technology Corp
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Renesas Technology Corp
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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【０００１】
【発明の属する技術分野】
この発明は、半導体装置、特にパッケージの厚さを薄くするための構成に関するものである。
【０００２】
【従来の技術】
図６及び図７は、従来の半導体装置の構成を示すもので、図６はパッケージの概略構造を示す断面図、図７は半導体チップとリード端子とを接続するワイヤの形状を示す概略側面図である。これらの図において、１はダイパッド、２はダイパッド１にダイボンド材３を介して裏面が固着された半導体チップ、４は半導体チップ２の回路面に設けられた接続用のパッド、６は半導体チップ２と外部回路とを接続するリード端子、７は半導体チップのパッド４とリード端子６とを接続する金線等のワイヤで、金線の先端を溶融して生成した金ボール７Ａをキャピラリー（図示せず）を介してパッド４にボンディングすると共に、キャピラリーをリバース動作させて図６及び図７に７Ｂで示すように屈曲部を形成し、更に必要があればキャピラリーを再度リバース動作させて、図７に７Ｃで示すように第２の屈曲部を形成した後、リード端子６に接続されている。
【０００３】
このように、パッド４からワイヤ７の屈曲部７Ｂまでの高さを持たせるのは、ワイヤ７と半導体チップ２のエッジとの接触を回避するためである。また、８はダイパッド１、半導体チップ２、リード端子６の内端部及びワイヤ７を封止する封止樹脂である。なお、上述した従来の半導体装置は、半導体チップ２の回路面からワイヤ７の屈曲部７Ｂまでの高さが150μｍ程度以上とされていたため、パッケージを薄くしたり、多機能化を図るためにパッケージ内に複数個の半導体チップを搭載することが困難であった。このための改良案として図８〜図１０に示す構成あるいは方法が提案されている。以下、これらの改良案について説明する。
図８〜図１０において、図６、図７と同一または相当部分にはそれぞれ同一符号を付して説明を省略する。
【０００４】
図８に示す改良案は、バンプ５上にワイヤ７を接続する際、キャピラリー９からはみ出したワイヤ７のテール７１を、その長さが50μｍ以下となるように抑えた状態で、かつ先端にボールを生成せずに線径のワイヤのままバンプ５に当接し、キャピラリー９で超音波熱圧着する。その後、キャピラリー９をリバース動作させずにクランパー１０を緩めて所定量のワイヤ７を繰り出した後、キャピラリー９を円弧運動させてリード端子６の上に位置させ、ワイヤ７をリード端子６に超音波熱圧着する。このような構成とすることにより、ワイヤ７のループ高さを50μｍ以下に抑えることが可能となる。
【０００５】
また、図９に示す改良案は、半導体チップ２のパッド４上に設けられていたバンプ５を除去し、パッド４上に直接ワイヤ７を圧着するものである。
圧着の手順は図８の場合と同様である。このようにすると、バンプ５の高さ分だけ更にワイヤのループ高さを抑えることができる。
【０００６】
また、図１０に示す改良案は、図６、図７と同様に、ワイヤ７の先端にボール７Ａを生成し半導体チップ２のパッド４上にボールボンドする構成で、図６、図７の場合よりワイヤ７のループ高さを抑えようとするものである。即ち、この場合には、半導体チップ２のパッド４にワイヤ７をボールボンドした後、キャピラリー９をリバース動作させずに、そのままリード端子６上に移動させ、ワイヤ７をリード端子６に超音波熱圧着させるものである。
【０００７】
【発明が解決しようとする課題】
従来の半導体装置及び従来の改良案は以上のように構成され、図６、図７の構成に比してワイヤのループ高さをある程度低く抑えることが可能となったが、パッケージの更なる薄型化と多機能化を図ることが求められているため、従来の改良案では、なお十分とは云えないという問題点があった。
この発明は、このような問題点に対処するためになされたもので、ワイヤのループ高さを更に低く抑えることができる半導体装置を提供することを目的とする。
【０００８】
【課題を解決するための手段】
この発明に係る半導体装置は、ダイパッドに装着された半導体チップ、この半導体チップと外部回路とを接続するリード端子、上記半導体チップのパッドにボール部が接続され、他端が上記リード端子に接続されると共に、上記パッドよりも、反リード端子側で折り返され、上記折り返された部分と、上記他端との間で、上記ボール部の上に固定されたワイヤ及び上記半導体チップ、パッド、リード端子の一部並びにワイヤを封止する封止樹脂を備えたものである。
【０００９】
この発明に係る半導体装置は、また、上記半導体チップが、複数個の半導体チップの積層体とされるものである。
【００１０】
【発明の実施の形態】
参考の形態１．
以下、この発明の実施の形態の説明に先立って参考の形態を図にもとづいて説明する。図１は、参考の形態１の構成及び製造方法を説明するための概略図で、封止樹脂は省略している。
この図において、図７と同一または相当部分にはそれぞれ同一符号を付して説明を省略する。この形態は、ワイヤ７の半導体チップ側の接続をボールボンドによって行なうもので、図１（ａ）に示すように、半導体チップ２のパッド４にワイヤ７の一端をボールボンドした後、キャピラリー９を破線矢印で示すように、上方に向けてＡまで移動させ、その後、Ａからリード端子６側、即ち図１において右方へ破線矢印で示すように、Ｂまでリバース動作させる。
この結果、ワイヤ７はパッド４にボールボンドした位置とＢとを結ぶ形で傾斜する。その後、キャピラリー９を破線矢印で示すように、Ｂから更に上方に向けてＣまで移動させ、その後、Ｃから反リード端子側、即ち図１において左方へ破線矢印で示すように、Ｄまでリバース動作させる。この結果、ワイヤ７はＢで屈曲してＢとＤとを結ぶ形で傾斜する。その後、キャピラリー９を図１において右下方に移動させて、リード端子６にワイヤ７の他端を超音波熱圧着すると、ワイヤ７は図１（ｂ）に示すように、２個所で屈曲してループ高さが更に低く抑えられるものである。なお、以上の説明では、ワイヤ７の一端を半導体チップのパッド４にボールボンドする例を示したが、ワイヤ７の一端にボールを生成せず、線径のワイヤのままパッド４に当接して圧着してもよい。また、パッド４上にバンプを設け、このバンプにワイヤをボールボンドあるいは線径のワイヤのまま圧着するようにしてもよい。
【００１１】
参考の形態２．
次に、この発明の参考の形態２を図にもとづいて説明する。図２は、参考の形態２の構成及び製造方法を説明するための概略図で、封止樹脂は省略している。
この図において、図１と同一または相当部分にはそれぞれ同一符号を付して説明を省略する。この形態は、参考の形態１と同様に、ワイヤの半導体チップ側の接続をボールボンドによって行なうもので、図２（ａ）に示すように、半導体チップ２のパッド４にワイヤ７の一端をボールボンドした後、キャピラリー９を破線矢印で示すように、上方に向けてＡまで移動させ、その後、Ａからリード端子６側、即ち図２において右方へ破線矢印で示すように、Ｂまでリバース動作させる。この結果、ワイヤ７はパッド４にボールボンドした位置とＢとを結ぶ形で傾斜する。その後、キャピラリー９を破線矢印で示すように、Ｂから更に上方に向けてＣまで移動させ、その後、Ｃから更にリード端子側、即ち図２において右方へ破線矢印で示すように、Ｅまでリバース動作させる。
この結果、ワイヤ７はＢで屈曲してＢとＥとを結ぶ形で傾斜する。その後、キャピラリー９を図２において右下方に移動させて、リード端子６にワイヤ７の他端を超音波熱圧着すると、ワイヤ７は図２（ｂ）に示すように、２個所で屈曲してループ高さが更に低く抑えられる。なお、以上の説明では、ワイヤ７の一端を半導体チップのパッド４にボールボンドする例を示したが、ワイヤ７の一端にボールを生成せず、線径のワイヤのままパッド４に当接して圧着してもよい。
また、パッド４上にバンプを設け、このバンプにワイヤをボールボンドあるいは線径のワイヤのまま圧着するようにしてもよい。
【００１２】
参考の形態３．
次に、この発明の参考の形態３を図にもとづいて説明する。図３は、参考の形態３の構成及び製造方法を説明するための概略図で、封止樹脂は省略している。
この図において、図１と同一または相当部分にはそれぞれ同一符号を付して説明を省略する。図３に示すように、この形態は、半導体チップ２のパッド４上にワイヤ７の一端をボールボンドした後、キャピラリー（図示せず）を反リード端子６側に大きくリバース動作させ、その後、ルーピングを行なって、ワイヤ７の他端をリード端子６に超音波熱圧着するものである。
この結果、ワイヤ７はパッド４の反リード端子側、即ち図３においてパッドの左方で図示のように折り返され、そのままリード端子６に向けて延在するため、ループ高さを更に低くすることができる。なお、以上の説明では、ワイヤ７の一端を半導体チップのパッド４にボールボンドする例を示したが、ワイヤ７の一端にボールを生成せず、線径のワイヤのままパッド４に当接して圧着してもよい。 また、パッド４上にバンプを設け、このバンプにワイヤをボールボンドあるいは線径のワイヤのまま圧着するようにしてもよい。
【００１３】
実施の形態
次に、この発明の実施の形態を図にもとづいて説明する。図４は、実施の形態の構成及び製造方法を説明するための概略図で、封止樹脂は省略している。この図において、図３と同一または相当部分にはそれぞれ同一符号を付して説明を省略する。図４に示すように、この実施の形態は、半導体チップ２のパッド４上にワイヤ７の一端をボールボンドした後、キャピラリー（図示せず）を反リード端子６側、即ち図４においてパッド４の左方に大きくリバース動作させ、その後、ルーピングを行なって、ワイヤ７の他端をリード端子６に超音波熱圧着し、その後、パッド４の上にバンプ５をボンドしてワイヤ７を固定するようにしたものである。この結果、参考の形態３と同様に、ワイヤ７のループ高さを更に低くすることができる。なお、以上の説明では、ワイヤ７の一端を半導体チップのパッド４上にボールボンドする例を示したが、ワイヤ７の一端にボールを生成せず、線径のワイヤのままパッド４に当接して圧着してもよい。また、パッド４上にバンプ５を設け、このバンプにワイヤをボールボンドあるいは線径のワイヤのまま圧着するようにしてもよい。
【００１４】
上述した実施の形態にもとづいてワイヤ７のループ高さを低くすることにより、半導体チップ２を複数個搭載することが可能となり、更に、多機能化を図ることが可能となる。図５は、上述した実施の形態の実施により、半導体チップ２を４個積層して搭載した例を示すものである。
この図において、２２はダイパッド１の一面にダイボンド材３によって裏面が固着された第１の半導体チップ、７２は第１の半導体チップとリード端子６とを接続するワイヤ、２３は第１の半導体チップ２２の回路面にダイボンド材３によって裏面が固着された第２の半導体チップ、７３は第２の半導体チップとリード端子６とを接続するワイヤ、２４はダイパッド１の他面にダイボンド材３によって裏面が固着された第３の半導体チップ、７４は第３の半導体チップとリード端子６とを接続するワイヤ、２５は第３の半導体チップ２４の回路面にダイボンド材３によって裏面が固着された第４の半導体チップ、７５は第４の半導体チップとリード端子６とを接続するワイヤである。
【００１５】
【発明の効果】
この発明に係る半導体装置は、ダイパッドに装着された半導体チップ、この半導体チップと外部回路とを接続するリード端子、上記半導体チップのパッドにボール部が接続され、他端が上記リード端子に接続されると共に、上記パッドよりも、反リード端子側で折り返され、上記折り返された部分と、上記他端との間で、上記ボール部の上に固定されたワイヤ及び上記半導体チップ、パッド、リード端子の一部並びにワイヤを封止する封止樹脂を備えたものであるため、ワイヤのループ高さを低く抑えることができ、パッケージの薄型化が容易となる。
【図面の簡単な説明】
【図１】 この発明の参考の形態１の構成及び製造方法を説明するための概略図である。
【図２】 この発明の参考の形態２の構成及び製造方法を説明するための概略図である。
【図３】 この発明の参考の形態３の構成及び製造方法を説明するための概略図である。
【図４】 この発明の実施の形態の構成及び製造方法を説明するための概略図である。
【図５】 実施の形態にもとづいて複数個の半導体チップを搭載した例を示す構成図である。
【図６】 従来の半導体装置の概略構成を示す断面図である。
【図７】 従来の半導体装置のワイヤの形状を示す概略側面図である。
【図８】 従来の半導体装置の改良案の構成の一例を示す概略図である。
【図９】 従来の半導体装置の改良案の構成の他の一例を示す概略図である。
【図１０】 従来の半導体装置の改良案の構成の更に他の一例を示す概略図である。
【符号の説明】
１ ダイパッド、 ２ 半導体チップ、 ３ ダイボンド材、 ４ パッド、 ５ バンプ、 ６ リード端子、 ７ ワイヤ、 ８ 封止樹脂、 ９キャピラリー。

Claims (2)

  1. ダイパッドに装着された半導体チップ、この半導体チップと外部回路とを接続するリード端子、上記半導体チップのパッドにボール部が接続され、他端が上記リード端子に接続されると共に、上記パッドよりも、反リード端子側で折り返され、上記折り返された部分と、上記他端との間で、上記ボール部の上に固定されたワイヤ及び上記半導体チップ、パッド、リード端子の一部並びにワイヤを封止する封止樹脂を備えた半導体装置。
  2. 上記半導体チップは、複数個の半導体チップの積層体であることを特徴とする請求項１記載の半導体装置。
JP2002182099A 2002-06-21 2002-06-21 半導体装置 Expired - Fee Related JP3923379B2 (ja)

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JP4298665B2 (ja) 2005-02-08 2009-07-22 株式会社新川 ワイヤボンディング方法
JP2011023768A (ja) * 2010-11-05 2011-02-03 Fuji Electric Systems Co Ltd 半導体装置の製造方法
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