CN202816916U - 一种倒装封装装置 - Google Patents
一种倒装封装装置 Download PDFInfo
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- CN202816916U CN202816916U CN201220518856.4U CN201220518856U CN202816916U CN 202816916 U CN202816916 U CN 202816916U CN 201220518856 U CN201220518856 U CN 201220518856U CN 202816916 U CN202816916 U CN 202816916U
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Abstract
本实用新型公开了一种倒装封装装置,包括一芯片,一基板和一组连接芯片和基板的连接装置。其中,该连接装置包括一组硬度较小的第一连接结构和一组硬度较大且导电性能较好的第二连接结构,通过第一连接结构来承担由于芯片和基板的热膨胀系数不同而导致焊球形变的热应力,有效的防止了焊球的疲劳断裂,提高了整个倒装封装装置热应力的可靠性,同时,通过第二连接结构同时实现了芯片和基板之间的良好的电性连接。
Description
技术领域
本实用新型涉及半导体器件领域,尤其涉及一种倒装封装装置。
背景技术
电子封装的发展趋势是体积更小,重量更轻,倒装封装技术正是顺应这一发展趋势而产生的。与传统的引线连接的封装方式相比,倒装封装技术具有封装密度高,电和热性能优良,可靠性高等优点。通常的倒装封装技术是将芯片倒置,中间通过焊点,将芯片放置于基板(PCB板)上,从而实现电气和机械连接。因此,焊点的制成是非常重要的一个工序。
参考图1,所示为一采用现有技术的倒装封装装置的示意图,其包括芯片11,基板12,芯片焊垫13,基板焊垫14和焊球15。其中,芯片焊垫13位于芯片11的上表面,以将芯片的电极性引出;焊球15位于芯片焊垫13和基板焊垫14之间,通过这种连接关系,将芯片11上的电极性通过基板12引出。
然而在实际应用中,由于芯片11和基板12的膨胀系数不同,因此,在温度变化时,焊球15很容易发生形变,形变的大小与焊球高度,芯片大小以及基板厚度等因素相关,焊球15的形变将导致焊球的疲劳断裂和电学上的开路或者短路,而造成系统的失效。
发明内容
有鉴于此,本实用新型的目的在于提供一种新型的倒装封装装置,以解决现有技术中焊球容易发生形变,倒装封装装置可靠性差的问题。
为解决上述技术问题,本实用新型采用如下技术方案:
依据本实用新型一实施例的倒装封装装置,包括一芯片,一基板,一组连接所述芯片和所述基板的连接装置,所述连接装置包括一组第一连接结构和一组第二连接结构,其中,
所述第一连接结构和所述第二连接结构相互间隔,排列于所述芯片和所述基板之间;
所述第一连接结构包括第一类金属,可以为金属金或者金属银;
所述第二连接结构包括第二类金属,可以为金属铜或者金属镍;
所述第一类金属的硬度小于所述第二类金属的硬度。
进一步地,所述连接装置可以位于所述芯片的第一表面上的焊垫上,也可以位于所述基板上。
所述第一连接结构为柱状或者球状。
所述第二连接结构为柱状或者球状。
所述第一连接结构或者所述第二连接结构可以通过电镀工艺形成,也可以通过超声焊工艺形成。
由此可见,依据本实用新型实施例的倒装封装装置,通过硬度较小的一组第一连接结构来承担由于芯片和基板的热膨胀系数不同而导致焊球形变的热应力,有效的防止了焊球的疲劳断裂,提高了整个倒装封装装置热应力的可靠性。并且,通过一组导电性能较好的第二连接结构同时实现了芯片和基板之间的良好的电性连接。
附图说明
图1所示为采用现有技术的一种倒装封装装置的示意图;
图2所示为依据本实用新型一实施例的倒装封装装置的示意图;
图3所示为依据本实用新型另一实施例的倒装封装装置的示意图。
具体实施方式
以下结合附图对本实用新型的几个优选实施例进行详细描述,但本实用新型并不仅仅限于这些实施例。本实用新型涵盖任何在本发明的精髓和范围上做的替代、修改、等效方法以及方案。为了使公众对本发明有彻底的了解,在以下本实用新型优选实施例中详细说明了具体的细节,而对本领域技术人员来说没有这些细节的描述也可以完全理解本发明。
实施例一
参考图2,所示为依据本实用新型一实施例的倒装封装装置的示意图。在该实施例中,倒装封装装置200包括芯片201,基板205(PCB板),一组连接所述芯片和所述基板的连接装置204;其中,连接装置204包括第一连接结构204-1和第二连接结构204-2。这里,
第一连接结构204-1和第二连接结构204-2相互间隔,排列于芯片201和基板205之间。具体的,第一连接结构204-1位于第二连接结构204-2之上。
其中,第一连接结构204-1可以由硬度较小的第一类金属构成,例如,可以为金或者银。
第二连接结构204-2可以由硬度较大、导电性能较好的第二类金属构成,例如,可以为铜或者镍。
当温度发生变化时,由于芯片201和基板205的热膨胀系数之间的差异,导致连接装置204发生形变。但是,由于第一连接结构204-1的硬度较小,因此,第一连接结构204-1通过自己的形变可以很好的承担此时的热应力形变,避免了连接装置204的断裂以及可能引起的电路的开路或者短路,很好的提高了系统的可靠性。同时,由于第二连接结构204-2的导电性能较好,因此,图2所示的倒装封装装置能够很好的实现芯片201与基板205之间的电气连接。
具体的,连接装置204可以位于芯片201的第一表面上的焊垫202上;当然,连接装置204也可以位于基板205的第一表面上的焊垫203上。
图2所示的依据本实用新型实施例的倒装封装装置,连接装置由两个叠加的球状的第一连接结构和第二连接结构组成,本领域技术人员根据本实用新型公开的实施例的基础上,可以轻易得知,连接装置可以由多个第一连接结构和第二连接结构依次间隔排列组成;第一连接结构和第二连接结构可以由不同类型的合适的金属构成;第一连接结构和第二连接结构的位置可以调换等。
在该实施例中,球状的第一连接结构或者第二连接结构可以通过超声焊工艺或者其他类型的制造工艺形成。
参考图3,所示为依据本实用新型另一实施例的倒装封装装置的示意图。在该实施例中,倒装封装装置300包括芯片301,基板305(PCB板),以及用以连接芯片301和基板305的连接装置304。其中,连接装置304可以进一步包括两个第一连接结构304-1和一个第二连接结构304-2。
第一连接结构304-1和第二连接结构304-2相互间隔,排列于芯片301和基板305之间。具体的,第二连接结构304-2位于两个第一连接结构304-1之间。
其中,第一连接结构304-1可以由硬度较小的第一类金属构成,例如,可以为金或者银。并且,两个第一连接结构304-1可以为同样的金属,也可以为不同的金属。
第二连接结构304-2可以由硬度较大、导电性能较好的第二类金属构成,例如,可以为铜或者镍。
当温度发生变化时,由于芯片301和基板305的热膨胀系数之间的差异,导致连接装置304发生形变。但是,由于第一连接结构304-1的硬度较小,因此,通过两个第一连接结构304-1很好的承担了此时的热应力形变,避免了连接装置304的断裂以及可能引起的电路的开路或者短路,很好的提高了系统的可靠性。同时,由于第二连接结构304-2的导电性能较好,因此,图3所示的倒装封装装置能够很好的实现芯片301与基板305之间的电气连接。
具体的,连接装置304可以位于芯片301的第一表面上的焊垫302上;当然,连接装置304也可以位于基板305的第一表面上的焊垫303上。
在该实施例中,柱状的第一连接结构或者第二连接结构可以通过电镀工艺或者其他类型的制造工艺形成。
以上详细说明了依据本实用新型实施例的倒装封装装置,根据本实用新型的教导,本领域技术人员可以得知其他合适形式的实施例,例如,第一连接结构和第二连接结构的数目和材料,第一连接结构和第二连接结构的形状以及制造工艺等。
依照本实用新型的实施例如上文所述,这些实施例并没有详尽叙述所有的细节,也不限制该实用新型仅为所述的具体实施例。显然,根据以上描述,可作很多的修改和变化。本说明书选取并具体描述这些实施例,是为了更好地解释本发明的原理和实际应用,从而使所属技术领域技术人员能很好地利用本实用新型以及在此基础上的修改使用。本发明仅受权利要求书及其全部范围和等效物的限制。
Claims (7)
1.一种倒装封装装置,包括一芯片,一基板,一组连接所述芯片和所述基板的连接装置,其特征在于,所述连接装置包括一组第一连接结构和一组第二连接结构,其中,
所述第一连接结构和所述第二连接结构相互间隔,排列于所述芯片和所述基板之间;
所述第一连接结构包括第一类金属;
所述第二连接结构包括第二类金属;所述第一类金属的硬度小于所述第二类金属的硬度。
2.根据权利要求1所述的倒装封装装置,其特征在于,所述第一连接结构为金属金或者金属银。
3.根据权利要求1所述的倒装封装装置,其特征在于,所述第二连接结构为金属铜或者金属镍。
4.根据权利要求1所述的倒装封装装置,其特征在于,所述连接装置位于所述芯片的第一表面上的焊垫上。
5.根据权利要求1所述的倒装封装装置,其特征在于,所述连接装置位于所述基板上。
6.根据权利要求1所述的倒装封装装置,其特征在于,所述第一连接结构为柱状或者球状。
7.根据权利要求1所述的倒装封装装置,其特征在于,所述第二连接结构为柱状或者球状。
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CN110233110B (zh) * | 2019-05-30 | 2021-04-27 | 同辉电子科技股份有限公司 | 一种GaN倒装芯片的焊接方法 |
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