TWM481486U - 倒裝封裝裝置 - Google Patents

倒裝封裝裝置 Download PDF

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Publication number
TWM481486U
TWM481486U TW102216151U TW102216151U TWM481486U TW M481486 U TWM481486 U TW M481486U TW 102216151 U TW102216151 U TW 102216151U TW 102216151 U TW102216151 U TW 102216151U TW M481486 U TWM481486 U TW M481486U
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TW
Taiwan
Prior art keywords
flip
connection structure
wafer
substrate
chip package
Prior art date
Application number
TW102216151U
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English (en)
Inventor
xiao-chun Tan
Original Assignee
Silergy Corp
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Publication date
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Publication of TWM481486U publication Critical patent/TWM481486U/zh

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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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Description

倒裝封裝裝置
本創作涉及半導體裝置領域，尤其涉及一種倒裝封裝裝置。
電子封裝的發展趨勢是體積更小，重量更輕，倒裝封裝技術正是順應這一發展趨勢而產生的。與傳統的引線連接的封裝方式相比，倒裝封裝技術具有封裝密度高，電和熱性能優良，可靠性高等優點。通常的倒裝封裝技術是將晶片倒置，中間透過焊點，將晶片放置於基板(PCB板)上，從而實現電氣和機械連接。因此，焊點的製成是非常重要的一個步驟。
參考圖1，所示為一採用現有技術的倒裝封裝裝置的示意圖，其包括晶片11，基板12，晶片焊墊13，基板焊墊14和焊球15。其中，晶片焊墊13位於晶片11的上表面，以將晶片的電極性引出；焊球15位於晶片焊墊13和基板焊墊14之間，透過這種連接關係，將晶片11上的電極性透過基板12引出。
然而在實際應用中，由於晶片11和基板12的膨脹係 數不同，因此，在溫度變化時，焊球15很容易發生形變，形變的大小與焊球高度，晶片大小以及基板厚度等因素相關，焊球15的形變將導致焊球的疲勞斷裂和電學上的開路或者短路，而造成系統的失效。
有鑑於此，本創作的目的在於提供一種新型的倒裝封裝裝置，以解決現有技術中焊球容易發生形變，倒裝封裝裝置可靠性差的問題。
為解決上述技術問題，本創作採用如下技術方案：依據本創作一實施例的倒裝封裝裝置，包括一晶片，一基板，一組連接所述晶片和所述基板的連接裝置，所述連接裝置包括一組第一連接結構和一組第二連接結構，其中，所述第一連接結構和所述第二連接結構相互間隔，排列於所述晶片和所述基板之間；所述第一連接結構包括第一類金屬，可以為金屬金或者金屬銀；所述第二連接結構包括第二類金屬，可以為金屬銅或者金屬鎳；所述第一類金屬的硬度小於所述第二類金屬的硬度。
進一步地，所述連接裝置可以位於所述晶片的第一表面上的焊墊上，也可以位於所述基板上。
所述第一連接結構為柱狀或者球狀。
所述第二連接結構為柱狀或者球狀。
所述第一連接結構或者所述第二連接結構可以透過電鍍程序形成，也可以透過超音波焊接程序形成。
由此可見，依據本創作實施例的倒裝封裝裝置，透過硬度較小的一組第一連接結構來承擔由於晶片和基板的熱膨脹係數不同而導致焊球形變的熱應力，有效的防止了焊球的疲勞斷裂，提高了整個倒裝封裝裝置熱應力的可靠性。並且，透過一組導電性能較好的第二連接結構同時實現了晶片和基板之間的良好的電性連接。
11‧‧‧晶片
12‧‧‧基板
13‧‧‧晶片焊墊
14‧‧‧基板焊墊
15‧‧‧焊球
200‧‧‧倒裝封裝裝置
201‧‧‧晶片
202‧‧‧焊墊
203‧‧‧焊墊
204‧‧‧連接裝置
204-1‧‧‧第一連接結構
204-2‧‧‧第二連接結構
205‧‧‧基板
300‧‧‧倒裝封裝裝置
301‧‧‧晶片
302‧‧‧焊墊
303‧‧‧焊墊
304‧‧‧連接裝置
304-1‧‧‧第一連接結構
304-2‧‧‧第二連接結構
305‧‧‧基板
圖1所示為採用現有技術的一種倒裝封裝裝置的示意圖；圖2所示為依據本創作一實施例的倒裝封裝裝置的示意圖；圖3所示為依據本創作另一實施例的倒裝封裝裝置的示意圖。
以下結合附圖對本創作的幾個較佳的實施例進行詳細描述，但本創作並不僅僅限於這些實施例。本創作涵蓋任何在本創作的精髓和範圍上做的替代、修改、等效方法以及方案。為了使公眾對本創作有徹底的瞭解，在以下本創作較佳的實施例中詳細說明了具體的細節，而對所屬技術 領域具有通常知識者來說沒有這些細節的描述也可以完全理解本創作。
實施例1
參考圖2，所示為依據本創作一實施例的倒裝封裝裝置的示意圖。在該實施例中，倒裝封裝裝置200包括晶片201，基板205(基板)，一組連接所述晶片和所述基板的連接裝置204；其中，連接裝置204包括第一連接結構204-1和第二連接結構204-2。
第一連接結構204-1和第二連接結構204-2相互間隔，排列於晶片201和基板205之間。具體的，第一連接結構204-1位於第二連接結構204-2之上。
其中，第一連接結構204-1可以由硬度較小的第一類金屬構成，例如，可以為金或者銀。
第二連接結構204-2可以由硬度較大、導電性能較好的第二類金屬構成，例如，可以為銅或者鎳。
當溫度發生變化時，由於晶片201和基板205的熱膨脹係數之間的差異，導致連接裝置204發生形變。但是，由於第一連接結構204-1的硬度較小，因此，第一連接結構204-1透過自己的形變可以很好的承擔此時的熱應力形變，避免了連接裝置204的斷裂以及可能引起的電路的開路或者短路，很好的提高了系統的可靠性。同時，由於第二連接結構204-2的導電性能較好，因此，圖2所示的倒裝封裝裝置能夠很好的實現晶片201與基板205之間的電 氣連接。
具體的，連接裝置204可以位於晶片201的第一表面上的焊墊202上；當然，連接裝置204也可以位於基板205的第一表面上的焊墊203上。
圖2所示的依據本創作實施例的倒裝封裝裝置，連接裝置由兩個疊加的球狀的第一連接結構和第二連接結構組成，所屬技術領域具有通常知識者根據本創作公開的實施例的基礎上，可以輕易得知，連接裝置可以由多個第一連接結構和第二連接結構依次間隔排列組成；第一連接結構和第二連接結構可以由不同類型的合適的金屬構成；第一連接結構和第二連接結構的位置可以調換等。
在該實施例中，球狀的第一連接結構或者第二連接結構可以透過超聲焊程序或者其他類型的製造程序形成。
參考圖3，所示為依據本創作另一實施例的倒裝封裝裝置的示意圖。在該實施例中，倒裝封裝裝置300包括晶片301，基板305(基板)，以及用以連接晶片301和基板305的連接裝置304。其中，連接裝置304可以進一步包括兩個第一連接結構304-1和一個第二連接結構304-2。
第一連接結構304-1和第二連接結構304-2相互間隔，排列於晶片301和基板305之間。具體的，第二連接結構304-2位於兩個第一連接結構304-1之間。
其中，第一連接結構304-1可以由硬度較小的第一類金屬構成，例如，可以為金或者銀。並且，兩個第一連接 結構304-1可以為同樣的金屬，也可以為不同的金屬。
第二連接結構304-2可以由硬度較大、導電性能較好的第二類金屬構成，例如，可以為銅或者鎳。
當溫度發生變化時，由於晶片301和基板305的熱膨脹係數之間的差異，導致連接裝置304發生形變。但是，由於第一連接結構304-1的硬度較小，因此，透過兩個第一連接結構304-1很好的承擔了此時的熱應力形變，避免了連接裝置304的斷裂以及可能引起的電路的開路或者短路，很好的提高了系統的可靠性。同時，由於第二連接結構304-2的導電性能較好，因此，圖3所示的倒裝封裝裝置能夠很好的實現晶片301與基板305之間的電氣連接。
具體的，連接裝置304可以位於晶片301的第一表面上的焊墊302上；當然，連接裝置304也可以位於基板305的第一表面上的焊墊303上。
在該實施例中，柱狀的第一連接結構或者第二連接結構可以透過電鍍程序或者其他類型的製造程序形成。
以上詳細說明了依據本創作實施例的倒裝封裝裝置，根據本創作的教導，所屬技術領域具有通常知識者可以得知其他合適形式的實施例，例如，第一連接結構和第二連接結構的數目和材料，第一連接結構和第二連接結構的形狀以及製造程序等。
依照本創作的實施例如上文所述，這些實施例並沒有詳盡敘述所有的細節，也不限制該創作僅為所述的具體實施例。顯然，根據以上描述，可作很多的修改和變化。本 說明書選取並具體描述這些實施例，是為了更好地解釋本創作的原理和實際應用，從而使所屬技術領域具有通常知識者能很好地利用本創作以及在本創作基礎上的修改使用。本創作僅受申請專利範圍及其全部範圍和等效物的限制。
200‧‧‧倒裝封裝裝置
201‧‧‧晶片
202‧‧‧焊墊
203‧‧‧焊墊
204‧‧‧連接裝置
204-1‧‧‧第一連接結構
204-2‧‧‧第二連接結構
205‧‧‧基板

Claims (7)

  1. 一種倒裝封裝裝置，包括一晶片，一基板，一組連接該晶片和該基板的連接裝置，其特徵在於，該連接裝置包括一組第一連接結構和一組第二連接結構，其中，該第一連接結構和該第二連接結構相互間隔，排列於該晶片和該基板之間；該第一連接結構包括第一類金屬；該第二連接結構包括第二類金屬；該第一類金屬的硬度小於該第二類金屬的硬度。
  2. 如申請專利範圍第1項所述的倒裝封裝裝置，其中，該第一連接結構為金屬金或者金屬銀。
  3. 如申請專利範圍第1項所述的倒裝封裝裝置，其中，該第二連接結構為金屬銅或者金屬鎳。
  4. 如申請專利範圍第1項所述的倒裝封裝裝置，其中，該連接裝置位於該晶片的第一表面上的焊墊上。
  5. 如申請專利範圍第1項所述的倒裝封裝裝置，其中，該連接裝置位於該基板上。
  6. 如申請專利範圍第1項所述的倒裝封裝裝置，其中，該第一連接結構為柱狀或者球狀。
  7. 如申請專利範圍第1項所述的倒裝封裝裝置，其中，該第二連接結構為柱狀或者球狀。
TW102216151U 2012-10-10 2013-08-28 倒裝封裝裝置 TWM481486U (zh)

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