JPS5763831A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5763831A
JPS5763831A JP13958280A JP13958280A JPS5763831A JP S5763831 A JPS5763831 A JP S5763831A JP 13958280 A JP13958280 A JP 13958280A JP 13958280 A JP13958280 A JP 13958280A JP S5763831 A JPS5763831 A JP S5763831A
Authority
JP
Japan
Prior art keywords
resin
insulating film
thermal expansion
package
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13958280A
Other languages
Japanese (ja)
Other versions
JPS6258530B2 (en
Inventor
Kimiyoshi Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13958280A priority Critical patent/JPS5763831A/en
Publication of JPS5763831A publication Critical patent/JPS5763831A/en
Publication of JPS6258530B2 publication Critical patent/JPS6258530B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Abstract

PURPOSE:To prevent deformation and breakage of wirings and the like on a semiconductor chip which is incorporated in a resin package due to stress caused by thermal expansion and shrinkage of the raw material resin of the package accompanied by the temperature cycle of low temperatures and high temperatures. CONSTITUTION:A metallic wiring layer 8 is formed on an insulating film 7 on a semiconductor substrate 6. A protective insulating film 9 is formed to protect said layer 8. The thickness of said protective insulating film 9 is thick. Then it is etched to obtained a thin thickness, and the layer is formed again. Or polyimide resin is applied. In such a method, the surface of the film 9 is smoothed so as not to have convenx and concave parts. A buffer insulating film 10 comprising polyimide having a thermal expansion coefficient of 150-450X10<-7>/ deg.C is provided thereon. Therefore, in the semiconductor chip while is sealed by the package resin 5, the stress caused by the thermal expansion and shrinkage of the resin 5 is eased, and the deformation and breakage of the metallic wirings due to said stress is prevented.
JP13958280A 1980-10-06 1980-10-06 Semiconductor device Granted JPS5763831A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13958280A JPS5763831A (en) 1980-10-06 1980-10-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13958280A JPS5763831A (en) 1980-10-06 1980-10-06 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5763831A true JPS5763831A (en) 1982-04-17
JPS6258530B2 JPS6258530B2 (en) 1987-12-07

Family

ID=15248611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13958280A Granted JPS5763831A (en) 1980-10-06 1980-10-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5763831A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60117633A (en) * 1983-11-30 1985-06-25 Toshiba Corp Semiconductor device
DE3708251A1 (en) * 1986-03-14 1987-09-17 Mitsubishi Electric Corp SEMICONDUCTOR COMPONENT
WO2013058232A1 (en) * 2011-10-17 2013-04-25 ローム株式会社 Chip diode and diode package

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0481336U (en) * 1990-11-26 1992-07-15

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5258469A (en) * 1975-11-10 1977-05-13 Hitachi Ltd Resin-molded type semiconductor device
JPS5352359A (en) * 1976-10-25 1978-05-12 Hitachi Ltd Resin mold type semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5258469A (en) * 1975-11-10 1977-05-13 Hitachi Ltd Resin-molded type semiconductor device
JPS5352359A (en) * 1976-10-25 1978-05-12 Hitachi Ltd Resin mold type semiconductor device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60117633A (en) * 1983-11-30 1985-06-25 Toshiba Corp Semiconductor device
DE3708251A1 (en) * 1986-03-14 1987-09-17 Mitsubishi Electric Corp SEMICONDUCTOR COMPONENT
US4853761A (en) * 1986-03-14 1989-08-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
WO2013058232A1 (en) * 2011-10-17 2013-04-25 ローム株式会社 Chip diode and diode package
JP2014029975A (en) * 2011-10-17 2014-02-13 Rohm Co Ltd Chip diode and diode package
US9054072B2 (en) 2011-10-17 2015-06-09 Rohm Co., Ltd. Chip diode and diode package
US9385093B2 (en) 2011-10-17 2016-07-05 Rohm Co., Ltd. Chip diode and diode package
US9659875B2 (en) 2011-10-17 2017-05-23 Rohm Co., Ltd. Chip part and method of making the same
US9773925B2 (en) 2011-10-17 2017-09-26 Rohm Co., Ltd. Chip part and method of making the same
US10164125B2 (en) 2011-10-17 2018-12-25 Rohm Co., Ltd. Semiconductor device having first and second electrode layers electrically disconnected from each other by a slit
US10593814B2 (en) 2011-10-17 2020-03-17 Rohm Co., Ltd. Semiconductor device having first and second electrode layers electrically disconnected from each other by a slit

Also Published As

Publication number Publication date
JPS6258530B2 (en) 1987-12-07

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