KR880005678A - 반도체장치용 리드프레임 - Google Patents
반도체장치용 리드프레임 Download PDFInfo
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- KR880005678A KR880005678A KR1019870008766A KR870008766A KR880005678A KR 880005678 A KR880005678 A KR 880005678A KR 1019870008766 A KR1019870008766 A KR 1019870008766A KR 870008766 A KR870008766 A KR 870008766A KR 880005678 A KR880005678 A KR 880005678A
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- semiconductor devices
- lead frame
- thin film
- lead frames
- film metal
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
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- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49121—Beam lead frame or beam lead device
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도∼제 3 도는 본 발명의 일실시예를 표시단 것으로서,
제 1 도는 러드프레임의 사시도.
제 2 도는 요부의 단면도.
제 3a 도, 제 3b 도는 수지봉지공정을 표시한 설명도.
* 도면의 주요부분에 대한 부호의 설명
1 : 타이 바 2 : 아우터리드
3 : 인너리드 4 : 다이패드
8 : 수지 13 : 납도금층
Claims (3)
- 수지봉지령 반도체장치의 조립공정에 사용되는 리드프레임애 있어서 봉지수지에서 외부의 아우터리드및 타이 바 부에 난용용성이면서 변형하기 쉬운 엷은 막 금속층을 형성한 것을 특정으로 하는 반도체장치용 리드프레임 .
- 제 1 항에 있어서 엷은막 금속층은 납도금에 의하여 형성된 반도체장치용 리드프레임.
- 제 1 항 또는 제 2 항에 있어서 엶은막 금속출의 두께는1μ∼20μ으로 된 반도체창치용 리드프레임.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61-243612 | 1986-10-13 | ||
JP61243612A JPS6396947A (ja) | 1986-10-13 | 1986-10-13 | 半導体装置用リ−ドフレ−ム |
JP243612 | 1986-10-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR880005678A true KR880005678A (ko) | 1988-06-30 |
KR900007230B1 KR900007230B1 (ko) | 1990-10-05 |
Family
ID=17106405
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870008766A KR900007230B1 (ko) | 1986-10-13 | 1987-08-10 | 반도체 장치용 리드프레임 |
Country Status (5)
Country | Link |
---|---|
US (2) | US4942455A (ko) |
JP (1) | JPS6396947A (ko) |
KR (1) | KR900007230B1 (ko) |
GB (1) | GB2195826B (ko) |
SG (1) | SG52991G (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100464752B1 (ko) * | 2002-11-29 | 2005-01-05 | 한국섬유개발연구원 | 의마섬유 및 그 제조방법 |
Families Citing this family (30)
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JPH02103941A (ja) * | 1988-10-13 | 1990-04-17 | Mitsubishi Electric Corp | 半導体素子の樹脂封止方法およびこれに用いる真空式樹脂封止装置と長尺リードフレーム |
US5336272A (en) * | 1988-10-13 | 1994-08-09 | Mitsubishi Denki Kabushiki Kaisha | Method for molding a semiconductor package on a continuous leadframe |
US5271148A (en) * | 1988-11-17 | 1993-12-21 | National Semiconductor Corporation | Method of producing a leadframe |
EP0408779B1 (en) * | 1989-07-18 | 1993-03-17 | International Business Machines Corporation | High density semiconductor memory module |
JP2748592B2 (ja) * | 1989-09-18 | 1998-05-06 | セイコーエプソン株式会社 | 半導体装置の製造方法および半導体封止用成形金型 |
IT1233008B (it) * | 1989-09-21 | 1992-03-14 | Sgs Thomson Microelectronics | Dispositivo integrato con connessioni perfezionate fra i terminali e la piastrina di materiale semiconduttore integrante componenti elettronici |
AU627076B2 (en) * | 1990-03-13 | 1992-08-13 | Sumitomo Electric Industries, Ltd. | Optical module and process of producing the same |
JPH0760839B2 (ja) * | 1990-03-15 | 1995-06-28 | 株式会社東芝 | 半導体装置 |
JP2585830B2 (ja) * | 1990-03-28 | 1997-02-26 | 株式会社東芝 | 樹脂封止型半導体装置及びその製造方法 |
JPH0595079A (ja) * | 1991-10-02 | 1993-04-16 | Ibiden Co Ltd | リードフレーム、半導体集積回路搭載用基板及び半導体装置並びにそれらの製造方法 |
US5328552A (en) * | 1993-03-30 | 1994-07-12 | At&T Bell Laboratories | Leadframe processing for molded package arrangements |
TW256946B (ko) * | 1993-03-30 | 1995-09-11 | At & T Corp | |
US6033934A (en) * | 1997-12-09 | 2000-03-07 | Orient Semiconductor Electronics Ltd. | Semiconductor chip fabrication method and apparatus therefor |
US6087712A (en) * | 1997-12-26 | 2000-07-11 | Samsung Aerospace Industries, Ltd. | Lead frame containing leads plated with tin alloy for increased wettability and method for plating the leads |
US5930604A (en) * | 1998-02-02 | 1999-07-27 | Delco Electronics Corporation | Encapsulation method for fine-pitch chip-on-board |
JP3085278B2 (ja) | 1998-05-01 | 2000-09-04 | 日本電気株式会社 | 半導体装置の製造方法および半導体製造装置 |
DE19921867C2 (de) | 1999-05-11 | 2001-08-30 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleiterbauelements mit mindestens einem verkapselten Chip auf einem Substrat |
JP3878781B2 (ja) * | 1999-12-27 | 2007-02-07 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US6396129B1 (en) * | 2001-03-05 | 2002-05-28 | Siliconware Precision Industries Co., Ltd. | Leadframe with dot array of silver-plated regions on die pad for use in exposed-pad semiconductor package |
JP4626919B2 (ja) * | 2001-03-27 | 2011-02-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7323765B2 (en) * | 2004-10-13 | 2008-01-29 | Atmel Corporation | Die attach paddle for mounting integrated circuit die |
US7192809B2 (en) * | 2005-02-18 | 2007-03-20 | Texas Instruments Incorporated | Low cost method to produce high volume lead frames |
JP5259978B2 (ja) * | 2006-10-04 | 2013-08-07 | ローム株式会社 | 半導体装置の製造方法 |
KR100789419B1 (ko) | 2006-11-27 | 2007-12-28 | (주)원일사 | 리드프레임 모재 가공방법 |
JP5252819B2 (ja) * | 2007-03-26 | 2013-07-31 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP2010056372A (ja) * | 2008-08-29 | 2010-03-11 | Sanyo Electric Co Ltd | 樹脂封止型半導体装置とその製造方法 |
JP2011233811A (ja) * | 2010-04-30 | 2011-11-17 | Renesas Electronics Corp | リードフレーム及びそれを用いた半導体装置の製造方法 |
JP5632047B2 (ja) * | 2012-06-27 | 2014-11-26 | 大日本印刷株式会社 | リードフレームおよびその製造方法、樹脂付リードフレームおよびその製造方法、ならびにledパッケージおよびその製造方法 |
JP6095997B2 (ja) * | 2013-02-13 | 2017-03-15 | エスアイアイ・セミコンダクタ株式会社 | 樹脂封止型半導体装置の製造方法 |
CN104795377B (zh) * | 2014-01-17 | 2019-02-19 | 恩智浦美国有限公司 | 具有引线网的半导体器件 |
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JPS5242372A (en) * | 1975-09-30 | 1977-04-01 | Mitsubishi Electric Corp | Process for production of semiconductor device |
JPS5332675A (en) * | 1976-09-07 | 1978-03-28 | Matsushita Electronics Corp | Production of semiconductor device |
JPS53145473A (en) * | 1977-05-24 | 1978-12-18 | Nec Corp | Lead frame for electronic parts |
JPS5779653A (en) * | 1980-11-06 | 1982-05-18 | Nec Corp | Lead frame for resin-sealed semiconductor device |
JPS57139952A (en) * | 1981-02-25 | 1982-08-30 | Toshiba Corp | Resin sealing type semiconductor device |
JPS57202766A (en) * | 1981-06-05 | 1982-12-11 | Nec Kyushu Ltd | Lead frame for semiconductor device |
JPS59108335A (ja) * | 1982-12-14 | 1984-06-22 | Nec Home Electronics Ltd | 半導体装置の製造方法 |
US4441118A (en) * | 1983-01-13 | 1984-04-03 | Olin Corporation | Composite copper nickel alloys with improved solderability shelf life |
JPS59175130A (ja) * | 1983-03-25 | 1984-10-03 | Toshiba Corp | 樹脂封止型半導体装置の製造法 |
DE3343251A1 (de) * | 1983-11-30 | 1985-06-05 | W.C. Heraeus Gmbh, 6450 Hanau | Systemtraeger fuer elektrische bauelemente |
JPS60154650A (ja) * | 1984-01-25 | 1985-08-14 | Nec Corp | 半導体装置用リ−ドフレ−ム |
JPS6160846A (ja) * | 1984-08-31 | 1986-03-28 | Tamagawa Kikai Kinzoku Kk | 半導体装置用銅合金リ−ド材 |
JPS6285453A (ja) * | 1985-10-09 | 1987-04-18 | Sumitomo Metal Mining Co Ltd | Ic用リ−ドフレ−ム材 |
US4768077A (en) * | 1986-02-20 | 1988-08-30 | Aegis, Inc. | Lead frame having non-conductive tie-bar for use in integrated circuit packages |
-
1986
- 1986-10-13 JP JP61243612A patent/JPS6396947A/ja active Pending
-
1987
- 1987-08-10 KR KR1019870008766A patent/KR900007230B1/ko not_active IP Right Cessation
- 1987-10-13 GB GB8724006A patent/GB2195826B/en not_active Expired - Fee Related
- 1987-10-13 US US07/108,907 patent/US4942455A/en not_active Expired - Fee Related
-
1989
- 1989-02-24 US US07/315,054 patent/US5026669A/en not_active Expired - Fee Related
-
1991
- 1991-07-09 SG SG52991A patent/SG52991G/en unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100464752B1 (ko) * | 2002-11-29 | 2005-01-05 | 한국섬유개발연구원 | 의마섬유 및 그 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
US5026669A (en) | 1991-06-25 |
SG52991G (en) | 1991-08-23 |
GB2195826B (en) | 1990-01-10 |
GB8724006D0 (en) | 1987-11-18 |
US4942455A (en) | 1990-07-17 |
GB2195826A (en) | 1988-04-13 |
JPS6396947A (ja) | 1988-04-27 |
KR900007230B1 (ko) | 1990-10-05 |
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