KR950034719A - 리드 프레임 및 이 리드 프레임을 포함한 패키지 디바이스 제조 방법 - Google Patents
리드 프레임 및 이 리드 프레임을 포함한 패키지 디바이스 제조 방법 Download PDFInfo
- Publication number
- KR950034719A KR950034719A KR1019950007155A KR19950007155A KR950034719A KR 950034719 A KR950034719 A KR 950034719A KR 1019950007155 A KR1019950007155 A KR 1019950007155A KR 19950007155 A KR19950007155 A KR 19950007155A KR 950034719 A KR950034719 A KR 950034719A
- Authority
- KR
- South Korea
- Prior art keywords
- lead frame
- cavity
- thickness
- support
- supports
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
다수의 디바이스 지지체를 구비한 리드 프레임이 기재되어 있다. 리드 프레임은 캐비티를 형성한다. 다수의 지지체는 리드 프레임으로부터 리드 프레임에 의해 형성된 캐비티내로 연장한다. 지지체는 캐비티의 공간내에서 서로 접속하지 않는다. 지지체는 두개 이상의 위치에서 리드 프레임 캐비티의 주변부에 결합되지 않는다. 디바이스는 종래의 기술을 이용한 리드 프레임의 와이어 리드선에 결합된 와이어 및 지지체에 고정된다. 지지체의 방향과 그들상에 장착되는 디바이스 크기에 대한 작은 크기 때문에 다수의 디바이스 지지체는 양호하게 패키지되어 보호되는 디바이스를 제공하고 보다 작은 패키지 디바이스를 제공할 수 있는 장점을 제공한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 리드 프레임(lead frame)을 도시한 도면, 제2도는 본 발명의 실시예인 리드 프레임을 도시한 도면, 제3도는 본 발명의 실시예인 패키지(package)로서 제2도에 도시된 리드 프레임의 선(3-3)을 따라 취한 측단면도.
Claims (12)
- 캐비티를 구비한 리드 프레임(lead frame)과, 리드 프레임으로부터 캐비티내로 돌출하고, 각각 캐비티내에서 다른 지지체와 비연속적이며 그리고 각각 리드 프레임 캐비티의 주변부상의 두개 이상의 위치에서 리드프레임에 결합되지 않는 다수의 지지체와, 지지체 태브와 고정된 태브와 고정된 디바이스(device)와, 직접 회로를 둘러싸는 몰딩 합성물을 포함한 것을 특징으로 하는 패키지 디바이스.
- 제1항에 있어서, 상기 리드 프레임은 캐비티 둘레의 주변부를 형성하며, 상기 지지체는 리드 프레임에 의해 형성된 주변부상에서 결합되지 않는 것을 특지으로 하는 패키지 디바이스.
- 제1항에 있어서, 상기 디바이스가 직접 회로인 것을 특징으로 하는 패키지 디바이스.
- 제1항에 있어서, 상기 지지체의 두께가 리드 프레임의 두께는 80% 또는 그 이하이며, 디바이스의 적어도 일부분은 평면내에서 리드 프레임에 의해 형성되는 것을 특징으로 하는 패키지 디바이스.
- 캐비티를 구비한 리드 프레임과, 캐비티내로 돌출한 다수의 디바이스 지지체를 포함하며, 각각의 지지체는 캐비티내에서 서로 비연속적이며, 디바이스는 다수의 지지체에 고정되고, 몰딩 합성물은 디바이스를 에워싸며, 지지체의 표면적은 태브가 고정되는 디바이스의 표면적보다 작으며, 디바이스의 적어도 일부분은 평면내에서 리드 프레임에 의해 형성되는 것을 특징으로 하는 패키지 디바이스.
- 디바이스를 패키징하는 방법에 있어서, 리드 프레임에 결합되고 리드 프레임의 캐비티내로 돌출한 다수의 지지체의 두께를 리드 프레임의 두께보다 작게 감소시키는 단계와, 다수의 지지체에 디바이스를 고정하는 단계와, 몰딩 합성물로 디바이스를 캡슐화하는 단계를 포함하는 것을 특징으로 하는 패키지 디바이스.
- 제6항에 있어서, 상기 지지체의 두께 단조(forging)에 의해 감소되는 것을 특징으로 하는 패키징 방법.
- 제7항에 있어서, 상기 지지체의 두께가 리드 프레임 두께의 80%또는 그 이하까지 감소되는 것을 특징으로 하는 패키징 방법.
- 제7항에 있어서, 상기 지지체의 두께가 리드 프레임 두께의 20%까지 감소되는 것을 특징으로 하는 패키징 방법.
- 다수의 리드선(leads)을 구비한 프레임을 포함하도록 형성된 전도성 금속 재료와, 프레임에 의해 형성된 캐비티와, 프레임으로부터 프레임에 의해 형성된 캐비티내로 연장하고 그리고 각각 캐비티내의 다른 지지체와 비연속적인 다수의 디바이스 지지체를 포함한 것을 특징으로 하는 패키징 방법.
- 제10항에 있어서, 상기 지지체 두께가 리드 프레임 두께의 80% 또는 그 이하까지 감소되는 것을 특징으로 하는 리드 프레임.
- 제10항에 있어서, 상기 지지체 두께가 리드 프레임 두께의 20% 또는 그 이하까지 감소되는 것을 특징으로 하는 리드 프레임.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22690594A | 1994-04-13 | 1994-04-13 | |
US226,905 | 1994-04-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR950034719A true KR950034719A (ko) | 1995-12-28 |
Family
ID=22850924
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950007155A KR950034719A (ko) | 1994-04-13 | 1995-03-31 | 리드 프레임 및 이 리드 프레임을 포함한 패키지 디바이스 제조 방법 |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0677873A1 (ko) |
JP (1) | JPH07283358A (ko) |
KR (1) | KR950034719A (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69635518T2 (de) | 1996-09-30 | 2006-08-17 | Stmicroelectronics S.R.L., Agrate Brianza | Kunststoffpackung für elektronische Anordnungen |
TW525274B (en) | 2001-03-05 | 2003-03-21 | Samsung Electronics Co Ltd | Ultra thin semiconductor package having different thickness of die pad and leads, and method for manufacturing the same |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63293963A (ja) * | 1987-05-27 | 1988-11-30 | Hitachi Ltd | 樹脂封止型半導体装置 |
JPH0222851A (ja) * | 1988-07-11 | 1990-01-25 | Hitachi Cable Ltd | 半導体装置用リードフレームおよびその製造方法 |
JP2602076B2 (ja) * | 1988-09-08 | 1997-04-23 | 三菱電機株式会社 | 半導体装置用リードフレーム |
JP2758677B2 (ja) * | 1989-12-21 | 1998-05-28 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
US5249354A (en) * | 1991-09-25 | 1993-10-05 | American Telephone & Telegraph Co. | Method of making electronic component packages |
JPH05190750A (ja) * | 1992-01-13 | 1993-07-30 | Toshiba Corp | 半導体装置 |
-
1995
- 1995-03-31 KR KR1019950007155A patent/KR950034719A/ko not_active Application Discontinuation
- 1995-04-04 EP EP95302238A patent/EP0677873A1/en not_active Withdrawn
- 1995-04-10 JP JP7107776A patent/JPH07283358A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPH07283358A (ja) | 1995-10-27 |
EP0677873A1 (en) | 1995-10-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR960009136A (ko) | 반도체 패키지 및 그 제조방법 | |
EP1089335A4 (en) | SEMICONDUCTOR DEVICE | |
KR890007410A (ko) | 반도체 장치 | |
KR980006174A (ko) | 버틈 리드 패키지 | |
KR960702178A (ko) | 플라스틱으로 캡슐봉입된 집적회로 패키지 및 그 제조방법(palstic encapsulated integrated circuit package and method of manufacturing the same) | |
KR950034719A (ko) | 리드 프레임 및 이 리드 프레임을 포함한 패키지 디바이스 제조 방법 | |
JPS63296252A (ja) | 樹脂封止型半導体装置 | |
KR960002775A (ko) | 수지-봉합(resin-sealed) 반도체 소자 | |
KR920007155A (ko) | 반도체 장치 및 그 제조 방법 | |
KR910001949A (ko) | 무플래그 리드프레임, 피키지 및 방법 | |
JPS6325958A (ja) | 半導体装置 | |
KR950025970A (ko) | 반도체 패키지용 리드 프레임 | |
JPS61276245A (ja) | 半導体集積回路装置 | |
KR200295664Y1 (ko) | 적층형반도체패키지 | |
KR200331874Y1 (ko) | 반도체의다핀형태패키지 | |
KR930011188A (ko) | 반도체 장치용 리이드 프레임 | |
KR970072338A (ko) | 리드프레임에 금속판이 부착된 리드 온 칩형 반도체 칩 패키지 | |
JPH0228353A (ja) | 樹脂封止型半導体装置 | |
KR930014851A (ko) | 리이드 프레임을 갖춘 반도체 패키지 | |
JPH0728001B2 (ja) | 半導体装置 | |
KR980006213A (ko) | 반도체 패키지 | |
KR970024106A (ko) | 업셋 조정된 리드 프레임 및 그를 이용한 반도체 칩 패키지 | |
KR970018465A (ko) | 반도체 패키지의 리드 프레임 | |
KR930017160A (ko) | 반도체 패키지 | |
JPH04206559A (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |