KR970053752A - 엘.오.씨(LOC:Lead On Chip) 패키지 및 그 제조방법 - Google Patents

엘.오.씨(LOC:Lead On Chip) 패키지 및 그 제조방법 Download PDF

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KR970053752A
KR970053752A KR1019950051426A KR19950051426A KR970053752A KR 970053752 A KR970053752 A KR 970053752A KR 1019950051426 A KR1019950051426 A KR 1019950051426A KR 19950051426 A KR19950051426 A KR 19950051426A KR 970053752 A KR970053752 A KR 970053752A
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package
double
semiconductor chip
lead frame
sided tape
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KR1019950051426A
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KR0167297B1 (ko
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조재원
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문정환
Lg 반도체 주식회사
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Priority to KR1019950051426A priority Critical patent/KR0167297B1/ko
Priority to US08/588,789 priority patent/US5834830A/en
Priority to JP1764496A priority patent/JP2826718B2/ja
Priority to CN96120356A priority patent/CN1129186C/zh
Publication of KR970053752A publication Critical patent/KR970053752A/ko
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Publication of KR0167297B1 publication Critical patent/KR0167297B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/4951—Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73215—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

본 발명은 엘.오.씨(LOC) 패키지 및 그 제조방법에 관한 것이다. 본 발명의 엘.오.씨(LOC) 반도체 패키지는 반도체 칩과, 반도체 칩의 소정부위에 층(Layer)의 형태로 부착되는 복수개의 양면 테이프와, 양면 테이프의 형태와 부합되게 단차를 갖도록 형성된 리드 프레임과, 리드 프레임의 인너리드와 반도체 칩의 패드를 전기적으로 연결하기 위한 와이어와, 반도체 칩과, 리드 프레임 및 와이어를 둘러싸는 코팅액으로 구성된다. 또한, 엘.오.씨(LOC) 패키지 제조방법은, 칩사이즈 패키지용 엘.오.씨(LOC) 리드 프레임을 제공하는 공정과; 리드 프레임의 소정부위에 복수개의 양면 테이프를 부착시키는 공정과; 양면 테이프에 반도체 칩을 부착시키는 공정과; 반도체 칩의 패드와 리드 프레임의 인너리드를 도전수단으로 와이 본딩하는 공정과; 리드 프레임들의 내부에 코팅액을 주사하는 포팅공정으로 구성된다. 이와 같이 구성된 엘.오.씨(LOC) 패키지 및 그 제조방법은 제조공정을 단순화함과 아울러 패키지의 원가를 절감할 수 있다.

Description

엘.오.씨(LOC:Lead On Chip) 패키지 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명의 일 실시예에 따른 엘.오.씨(LOC) 패키지의 리드 프레임을 나타낸 평면도.

Claims (7)

  1. 반도체 칩과; 상기 반도체 칩의 소정부위에 층(Layer)의 형태로 부착되는 복수개의 양면 테이프와; 상기 양면 테이프의 형태와 부합되게 단차를 갖도록 형성된 리드 프레임과; 상기 리드 프레임의 인너리드와 반도체 칩의 패드를 전기적으로 연결하기 위한 와이어와; 상기 반도체 칩과, 리드 프레임 및 와이어를 둘러싸는 코팅액으로 구성된 것을 특징으로 하는 엘.오.씨(LOC) 패키지.
  2. 제1항에 있어서, 상기 양면 테이프는 서로 다른 크기로 형성되는 것을 특징으로 하는 엘.오.씨(LOC) 패키지.
  3. 제1항에 있어서, 상기 양면 테이프의 양단에는 코팅액의 흐름을 방지하기 위하여 양면 테이프 댐바가 형성되는 것을 특징으로 하는 엘.오.씨(LOC) 패키지.
  4. 제1항에 있어서, 상기 코팅액은 폴리이미드 계열 중의 하나로 이루어진 것을 특징으로 하는 엘.오.씨(LOC) 패키지.
  5. 칩사이즈 패키지용 엘.오.씨(LOC) 리드 프레임을 제공하는 공정과; 상기 리드 프레임의 소정부위에 복수개의 양면 테이프를 부착시키는 공정과; 상기 양면 테이프에 반도체 칩을 부착시키는 공정과; 상기 반도체 칩의 패드와 리드 프레임의 인너리드를 도전수단으로 와이 본딩하는 공정과; 상기 리드 프레임들의 내부에 코팅액을 주사하는 포팅공정으로 구성되는 것을 특징으로 하는 엘.오.씨(LOC) 패키지 제조방법.
  6. 제5항에 있어서, 상기 포팅공정후, 상기 코팅액을 소정시간 경화시키는 공정과; 양면 테이프 댐바를 절단하는 공정을 더 포함하는 것을 특징으로 하는 엘.오.씨(LOC) 패키지 제조방법.
  7. 제5항에 있어서, 상기 코팅액은 폴리이미드 계열중의 하나를 사용하는 것을 특징으로 하는 엘.오.씨(LOC) 패키지 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950051426A 1995-12-18 1995-12-18 엘.오.씨 패키지 및 그 제조방법 KR0167297B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019950051426A KR0167297B1 (ko) 1995-12-18 1995-12-18 엘.오.씨 패키지 및 그 제조방법
US08/588,789 US5834830A (en) 1995-12-18 1996-01-19 LOC (lead on chip) package and fabricating method thereof
JP1764496A JP2826718B2 (ja) 1995-12-18 1996-02-02 Ｌｏｃ半導体パッケージ及びその製造方法
CN96120356A CN1129186C (zh) 1995-12-18 1996-10-28 Loc半导体封装及其制造方法

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KR1019950051426A KR0167297B1 (ko) 1995-12-18 1995-12-18 엘.오.씨 패키지 및 그 제조방법

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KR970053752A true KR970053752A (ko) 1997-07-31
KR0167297B1 KR0167297B1 (ko) 1998-12-15

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Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3026426B2 (ja) * 1996-08-29 2000-03-27 沖電気工業株式会社 樹脂封止型半導体装置とその製造方法及びその金型構造
JP2908350B2 (ja) * 1996-10-09 1999-06-21 九州日本電気株式会社 半導体装置
US6005286A (en) * 1997-10-06 1999-12-21 Micron Technology, Inc. Increasing the gap between a lead frame and a semiconductor die
US6143981A (en) 1998-06-24 2000-11-07 Amkor Technology, Inc. Plastic integrated circuit package and method and leadframe for making the package
US6181569B1 (en) 1999-06-07 2001-01-30 Kishore K. Chakravorty Low cost chip size package and method of fabricating the same
US6387732B1 (en) 1999-06-18 2002-05-14 Micron Technology, Inc. Methods of attaching a semiconductor chip to a leadframe with a footprint of about the same size as the chip and packages formed thereby
KR100566781B1 (ko) 1999-11-10 2006-04-03 삼성전자주식회사 리드 온 칩 타입 반도체 패키지
US6322903B1 (en) 1999-12-06 2001-11-27 Tru-Si Technologies, Inc. Package of integrated circuits and vertical integration
US6639308B1 (en) 1999-12-16 2003-10-28 Amkor Technology, Inc. Near chip size semiconductor package
DE10014304B4 (de) * 2000-03-23 2007-08-02 Infineon Technologies Ag Halbleiterbauelement und Verfahren zu dessen Herstellung
US7042068B2 (en) 2000-04-27 2006-05-09 Amkor Technology, Inc. Leadframe and semiconductor package made using the leadframe
US6531335B1 (en) * 2000-04-28 2003-03-11 Micron Technology, Inc. Interposers including upwardly protruding dams, semiconductor device assemblies including the interposers, and methods
US6545345B1 (en) 2001-03-20 2003-04-08 Amkor Technology, Inc. Mounting for a package containing a chip
KR100369393B1 (ko) 2001-03-27 2003-02-05 앰코 테크놀로지 코리아 주식회사 리드프레임 및 이를 이용한 반도체패키지와 그 제조 방법
US6608366B1 (en) 2002-04-15 2003-08-19 Harry J. Fogelson Lead frame with plated end leads
US6905914B1 (en) 2002-11-08 2005-06-14 Amkor Technology, Inc. Wafer level package and fabrication method
US7723210B2 (en) 2002-11-08 2010-05-25 Amkor Technology, Inc. Direct-write wafer level chip scale package
US6798047B1 (en) 2002-12-26 2004-09-28 Amkor Technology, Inc. Pre-molded leadframe
US6750545B1 (en) 2003-02-28 2004-06-15 Amkor Technology, Inc. Semiconductor package capable of die stacking
US6927483B1 (en) 2003-03-07 2005-08-09 Amkor Technology, Inc. Semiconductor package exhibiting efficient lead placement
US6794740B1 (en) 2003-03-13 2004-09-21 Amkor Technology, Inc. Leadframe package for semiconductor devices
US6879034B1 (en) 2003-05-01 2005-04-12 Amkor Technology, Inc. Semiconductor package including low temperature co-fired ceramic substrate
US6921967B2 (en) 2003-09-24 2005-07-26 Amkor Technology, Inc. Reinforced die pad support structure
US7507603B1 (en) 2005-12-02 2009-03-24 Amkor Technology, Inc. Etch singulated semiconductor package
US7572681B1 (en) 2005-12-08 2009-08-11 Amkor Technology, Inc. Embedded electronic component package
US7902660B1 (en) 2006-05-24 2011-03-08 Amkor Technology, Inc. Substrate for semiconductor device and manufacturing method thereof
US7968998B1 (en) 2006-06-21 2011-06-28 Amkor Technology, Inc. Side leaded, bottom exposed pad and bottom exposed lead fusion quad flat semiconductor package
US7687893B2 (en) 2006-12-27 2010-03-30 Amkor Technology, Inc. Semiconductor package having leadframe with exposed anchor pads
US7829990B1 (en) 2007-01-18 2010-11-09 Amkor Technology, Inc. Stackable semiconductor package including laminate interposer
US7982297B1 (en) 2007-03-06 2011-07-19 Amkor Technology, Inc. Stackable semiconductor package having partially exposed semiconductor die and method of fabricating the same
US7977774B2 (en) 2007-07-10 2011-07-12 Amkor Technology, Inc. Fusion quad flat semiconductor package
US7687899B1 (en) 2007-08-07 2010-03-30 Amkor Technology, Inc. Dual laminate package structure with embedded elements
US7777351B1 (en) 2007-10-01 2010-08-17 Amkor Technology, Inc. Thin stacked interposer package
US8089159B1 (en) 2007-10-03 2012-01-03 Amkor Technology, Inc. Semiconductor package with increased I/O density and method of making the same
US7847386B1 (en) 2007-11-05 2010-12-07 Amkor Technology, Inc. Reduced size stacked semiconductor package and method of making the same
US7956453B1 (en) 2008-01-16 2011-06-07 Amkor Technology, Inc. Semiconductor package with patterning layer and method of making same
US7723852B1 (en) 2008-01-21 2010-05-25 Amkor Technology, Inc. Stacked semiconductor package and method of making same
US8067821B1 (en) 2008-04-10 2011-11-29 Amkor Technology, Inc. Flat semiconductor package with half package molding
US7768135B1 (en) 2008-04-17 2010-08-03 Amkor Technology, Inc. Semiconductor package with fast power-up cycle and method of making same
US7808084B1 (en) 2008-05-06 2010-10-05 Amkor Technology, Inc. Semiconductor package with half-etched locking features
US8125064B1 (en) 2008-07-28 2012-02-28 Amkor Technology, Inc. Increased I/O semiconductor package and method of making same
US8184453B1 (en) 2008-07-31 2012-05-22 Amkor Technology, Inc. Increased capacity semiconductor package
US7847392B1 (en) 2008-09-30 2010-12-07 Amkor Technology, Inc. Semiconductor device including leadframe with increased I/O
US7989933B1 (en) 2008-10-06 2011-08-02 Amkor Technology, Inc. Increased I/O leadframe and semiconductor device including same
US8008758B1 (en) 2008-10-27 2011-08-30 Amkor Technology, Inc. Semiconductor device with increased I/O leadframe
US8089145B1 (en) 2008-11-17 2012-01-03 Amkor Technology, Inc. Semiconductor device including increased capacity leadframe
US8072050B1 (en) 2008-11-18 2011-12-06 Amkor Technology, Inc. Semiconductor device with increased I/O leadframe including passive device
US7875963B1 (en) 2008-11-21 2011-01-25 Amkor Technology, Inc. Semiconductor device including leadframe having power bars and increased I/O
US7982298B1 (en) 2008-12-03 2011-07-19 Amkor Technology, Inc. Package in package semiconductor device
US8487420B1 (en) 2008-12-08 2013-07-16 Amkor Technology, Inc. Package in package semiconductor device with film over wire
US20170117214A1 (en) 2009-01-05 2017-04-27 Amkor Technology, Inc. Semiconductor device with through-mold via
US8680656B1 (en) 2009-01-05 2014-03-25 Amkor Technology, Inc. Leadframe structure for concentrated photovoltaic receiver package
US8058715B1 (en) 2009-01-09 2011-11-15 Amkor Technology, Inc. Package in package device for RF transceiver module
US8026589B1 (en) 2009-02-23 2011-09-27 Amkor Technology, Inc. Reduced profile stackable semiconductor package
US7960818B1 (en) 2009-03-04 2011-06-14 Amkor Technology, Inc. Conformal shield on punch QFN semiconductor package
US8575742B1 (en) 2009-04-06 2013-11-05 Amkor Technology, Inc. Semiconductor device with increased I/O leadframe including power bars
US8796561B1 (en) 2009-10-05 2014-08-05 Amkor Technology, Inc. Fan out build up substrate stackable package and method
US8937381B1 (en) 2009-12-03 2015-01-20 Amkor Technology, Inc. Thin stackable package and method
US9691734B1 (en) 2009-12-07 2017-06-27 Amkor Technology, Inc. Method of forming a plurality of electronic component packages
US8324511B1 (en) 2010-04-06 2012-12-04 Amkor Technology, Inc. Through via nub reveal method and structure
US8294276B1 (en) 2010-05-27 2012-10-23 Amkor Technology, Inc. Semiconductor device and fabricating method thereof
US8440554B1 (en) 2010-08-02 2013-05-14 Amkor Technology, Inc. Through via connected backside embedded circuit features structure and method
US8487445B1 (en) 2010-10-05 2013-07-16 Amkor Technology, Inc. Semiconductor device having through electrodes protruding from dielectric layer
US8791501B1 (en) 2010-12-03 2014-07-29 Amkor Technology, Inc. Integrated passive device structure and method
US8390130B1 (en) 2011-01-06 2013-03-05 Amkor Technology, Inc. Through via recessed reveal structure and method
US8648450B1 (en) 2011-01-27 2014-02-11 Amkor Technology, Inc. Semiconductor device including leadframe with a combination of leads and lands
TWI557183B (zh) 2015-12-16 2016-11-11 財團法人工業技術研究院 矽氧烷組成物、以及包含其之光電裝置
US8552548B1 (en) 2011-11-29 2013-10-08 Amkor Technology, Inc. Conductive pad on protruding through electrode semiconductor device
US9704725B1 (en) 2012-03-06 2017-07-11 Amkor Technology, Inc. Semiconductor device with leadframe configured to facilitate reduced burr formation
US9129943B1 (en) 2012-03-29 2015-09-08 Amkor Technology, Inc. Embedded component package and fabrication method
US9048298B1 (en) 2012-03-29 2015-06-02 Amkor Technology, Inc. Backside warpage control structure and fabrication method
KR101486790B1 (ko) 2013-05-02 2015-01-28 앰코 테크놀로지 코리아 주식회사 강성보강부를 갖는 마이크로 리드프레임
KR101563911B1 (ko) 2013-10-24 2015-10-28 앰코 테크놀로지 코리아 주식회사 반도체 패키지
US9673122B2 (en) 2014-05-02 2017-06-06 Amkor Technology, Inc. Micro lead frame structure having reinforcing portions and method
US9679831B2 (en) * 2015-08-13 2017-06-13 Cypress Semiconductor Corporation Tape chip on lead using paste die attach material

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60165742A (ja) * 1984-02-08 1985-08-28 Hitachi Tokyo Electronics Co Ltd 半導体装置
JPH0322465A (ja) * 1989-06-20 1991-01-30 Sumitomo Bakelite Co Ltd 樹脂封止型半導体装置
US5583375A (en) * 1990-06-11 1996-12-10 Hitachi, Ltd. Semiconductor device with lead structure within the planar area of the device
US5227661A (en) * 1990-09-24 1993-07-13 Texas Instruments Incorporated Integrated circuit device having an aminopropyltriethoxysilane coating
JP3238004B2 (ja) * 1993-07-29 2001-12-10 株式会社東芝 半導体装置の製造方法
US5585600A (en) * 1993-09-02 1996-12-17 International Business Machines Corporation Encapsulated semiconductor chip module and method of forming the same
JPH07297345A (ja) * 1994-04-28 1995-11-10 Hitachi Cable Ltd 半導体装置用リードフレーム

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US5834830A (en) 1998-11-10
JP2826718B2 (ja) 1998-11-18

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