KR960035835A - 반도체장치와 그 제조방법 - Google Patents

반도체장치와 그 제조방법 Download PDF

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KR960035835A
KR960035835A KR1019960006004A KR19960006004A KR960035835A KR 960035835 A KR960035835 A KR 960035835A KR 1019960006004 A KR1019960006004 A KR 1019960006004A KR 19960006004 A KR19960006004 A KR 19960006004A KR 960035835 A KR960035835 A KR 960035835A
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semiconductor device
interlayer insulating
insulating layer
forming
pads
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KR1019960006004A
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KR100403691B1 (ko
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가오루 이와부치
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이데이 노부유키
소니 가부시기가이샤
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Abstract

본 발명은 복수의 패드를 가지는 반도체소자를 포함하는 반도체장치와 그 제조방법에 관한 것이며, 복수의 패드를 가지는 반도체소자의 패드형성면에, 패드중의 하나에 도통하는 배선부가 복수 형성되고, 배선부위 소정 위치상에 범프가 복수 형성되어 이루어진다. 따라서, 반도체소자와 회로기판과의 선팽창계수의 차에 기인하는 문제를 해소하여 충분한 신뢰성을 확보하는 동시에, 플립칩화에 의한 고밀도화의 효과를 충분히 발휘할 수 있고, 또한 코스트업을 억제할 수 있다.

Description

반도체장치와 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2a도~제2c도는 본 발명의 반도체장치의 일실시예의 개략구성을 나타낸 도면.

Claims (3)

  1. 복수의 패드를 가지는 반도체소자의 패드형성면에, 상기 패드중의 하나에 도통하는 배선부가 복수형성되고, 이 배선부의 소정 위치상에 범프가 복수 형성되어 이루어지는 것을 특징으로 하는 반도체장치.
  2. 제1항에 있어서, 상기 범프는 2개의 군으로 분류되고, 상기 패드중의 신호핀으로 될 패드에 도통하는 군의 범프가 상기 패드형성면의 주변부에 배설되고, 상기 패드중의 전원핀으로 될 패드에 도통하는 다른 군의 범프가 상기 패드형성면의 내측에 배설되어 이루어지는 것을 특징으로 하는 반도체 장치.
  3. 패드를 가지는 반도체소자상에, 회로기판과 전기적·기계적으로 접속되는 범프를 형성하는 반도체 장치의 제조방법으로서, 상기 반도체소자상에 제1의 층간절연층을 형성하고, 또한 이 제1 층간절연층의, 상기 패드의 지상부를 개구하여 이 패드를 노출시키는 제1공정과, 상기 제1의 층간절연층상에, 상기 패드로부터 반도체소자상의 범프형성위치까지 연장된 패턴의 배선부를 형성하는 제2공정과, 상기 배선부를 덮어서 상기 제1의 층간절연층상에 제2의 층간절연층을 형성하고, 또한 이 제2의 층간절연층의, 상기 범프형성위치의 직상부에 개구하여 상기 배선부를 노출시키는 제3공정과, 상기 반도체소자의, 제2의 층간절연층을 형성한 측의 면에 도전층을 형성하는 제4공정과, 상기 도전층상에 도금레지스트층을 형성하고, 또한 상기 범프형성위치의 직상부를 개구하여 상기 도전층을 노출시키는 제5공정과, 상기 반도체소자의 도금레지스트층측을 전해액중에 침지하고, 통전함으로써 상기 범프형성위치의 직상부에 범프를 형성하는 제6공정을 가지는 것을 특징으로 하는 반도체장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960006004A 1995-03-09 1996-03-08 반도체장치와그제조방법 KR100403691B1 (ko)

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JP1995-49353 1995-03-09
JP4935395A JP3362545B2 (ja) 1995-03-09 1995-03-09 半導体装置の製造方法

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US6030890A (en) 2000-02-29

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