DE60109339T2 - Verfahren zum Drahtbonden - Google Patents

Verfahren zum Drahtbonden Download PDF

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Publication number
DE60109339T2
DE60109339T2 DE60109339T DE60109339T DE60109339T2 DE 60109339 T2 DE60109339 T2 DE 60109339T2 DE 60109339 T DE60109339 T DE 60109339T DE 60109339 T DE60109339 T DE 60109339T DE 60109339 T2 DE60109339 T2 DE 60109339T2
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Prior art keywords
metal
copper
layer
bondable
demarcation
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Expired - Lifetime
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DE60109339T
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DE60109339D1 (de
Inventor
Howard R. Test
Gonzalo Amador
Willmar E. Subido
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Texas Instruments Inc
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Texas Instruments Inc
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Publication of DE60109339T2 publication Critical patent/DE60109339T2/de
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    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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Description

  • HINTERGRUND DER ERFINDUNG
  • Die vorliegende Erfindung betrifft allgemein das Gebiet von Halbleiterbauelementen und Prozessen und insbesondere den Prozeß des Drahtbondens an Bondkontaktstellen kupfermetallisierter integrierter Schaltkreise.
  • BESCHREIBUNG DES STANDS DER TECHNIK
  • Bei der Technologie integrierter Schaltkreise (IC) war reines oder dotiertes Aluminium über mehr als vier Jahrzehnte die Metallisierung der Wahl für Verbindungen und Bondkontaktstellen. Hauptvorteile von Aluminium sind das leichte Abscheiden und die leichte Strukturierung. Weiterhin wurde die Technologie des Bondens aus Gold, Kupfer oder Aluminium bestehender Drähte an die Aluminium-Bondkontaktstellen bis zu einem hohen Automatisierungs-, Miniaturisierungs- und Zuverlässigkeitsniveau entwickelt. Beispiele des hohen technischen Standards des Drahtbondens an Aluminium können den US-Patenten US-A-5 455 195, erteilt am 3. Oktober 1995 (Ramsey u. a., "Method for Obtaining Metallurgical Stability in Integrated Circuit Conductive Bonds"), US-A-5 244 140, erteilt am 14. September 1993 (Ramsey u. a., "Ultrasonic Bonding Process Beyond 125 kHz"), US-A-5 201 454, erteilt am 13. April 1993 (Alfaro u. a., "Process for Enhanced Intermetallic Growth in IC Interconnections") und US-A-5 023 697, erteilt am 11. Juni 1991 (Tsumura, "Semiconductor Device with Copper Wire Ball Bonding"), entnommen werden.
  • Bei dem andauernden Trend der Miniaturisierung der ICs bestimmt die RC-Zeitkonstante der Verbindung zwischen aktiven Schaltungselementen zunehmend das erreichbare Produkt aus der Geschwindigkeit und der Leistung des ICs. Folglich erscheint der verhältnismäßig hohe spezifische Widerstand des Verbindungsaluminiums nun als dem geringeren spezifischen Widerstand von Metallen, wie Kupfer, unterlegen. Überdies wird die ausgeprägte Empfindlichkeit von Aluminium gegenüber einer Elektromigration zu einem ernsten Hindernis. Folglich besteht daher nun in der Halbleiterindustrie ein starkes Bestreben, Kupfer wegen seiner höheren elektrischen Leitfähigkeit und seiner geringeren Elektromigrationsempfindlichkeit als das bevorzugte Verbindungsmetall zu verwenden. Angesichts der ausgereiften Aluminium-Verbindungstechnologie ist der Übergang zu Kupfer jedoch eine erhebliche technische Herausforderung.
  • Kupfer muß abgeschirmt und daran gehindert werden, in das Silicium-Grundmaterial der ICs zu diffundieren, um die Schaltungen vor den die Lebensdauer von Ladungsträgern beeinträchtigenden Eigenschaften von Kupferatomen, die sich in dem Siliciumgitter befinden, zu schützen. Für Bondkontaktstellen aus Kupfer muß die Bildung dünner Kupfer(I)oxidfilme während des Ablaufs des Herstellungsprozesses verhindert werden, weil diese Filme das zuverlässige Anbringen von Bonddrähten, insbesondere für das herkömmliche Golddraht-Kugelbonden, erheblich behindern. Im Gegensatz zu Aluminiumoxidfilmen, die über metallischem Aluminium liegen, können Kupferoxidfilme, die über metallischem Kupfer liegen, nicht leicht durch eine Kombination einer Thermokompression und beim Bondprozeß angewendeter Ultraschallenergie zerstört werden. Eine weitere Schwierigkeit besteht darin, daß blanke Kupfer-Bondkontaktstellen leicht korrodieren.
  • Zum Lösen dieser Probleme wurde ein Verfahren zum Verkappen der reinen Kupfer-Bondkontaktstelle mit einer Aluminiumschicht offenbart, wodurch die traditionelle Situation einer durch herkömmliches Golddraht-Kugelbonden zu bondenden Aluminiumkontaktstelle wiederhergestellt wird. Ein geeigneter Bondprozeß ist in US-A-5 785 236, erteilt am 28. Juli 1998 (Cheung u. a., "Advanced Copper Interconnect System that is Compatible with Existing IC Wire Bonding Technology"), beschrieben. Der beschriebene Ansatz weist jedoch mehrere Nachteile auf.
  • Erstens sind die Herstellungskosten der Aluminiumverkappung höher als erwünscht, weil bei dem Prozeß zusätzliche Schritte für das Aufbringen von Metall, das Strukturieren, das Ätzen und das Reinigen erforderlich sind. Zweitens muß die Verkappung dick genug sein, um zu verhindern, daß Kupfer durch das Verkappungsmetall diffundiert und möglicherweise die IC-Transistoren vergiftet. Drittens ist das für die Verkappung verwendete Aluminium weich und wird daher durch die Markierungen der Mehrfachsondenkontakte beim elektrischen Testen erheblich beschädigt. Diese Beschädigung wird wiederum bei der sich immer weiter verringernden Größe der Bondkontaktstellen so dominierend, daß die anschließende Kugelbondbefestigung nicht mehr zuverlässig ist.
  • Eine kostengünstige Anordnung und ein kostengünstiges Verfahren zum Verkappen der Kupfer-Bondkontaktstellen kupfermetallisierter ICs wurden in der am 18. Februar 2001 eingereichten europäischen Patentanmeldung 01000021.4 offenbart. Die vorliegende Erfindung steht in Beziehung zu dieser Anmeldung. Es hat sich ein dringender Bedarf an einem zuverlässigen Verfahren zum Bonden von Drähten an verkappte Bondkontaktstellen ergeben, welches minimale Herstellungskosten mit einer maximalen Aufwärtsdiffusionssteuerung von Metallen, die das anschließende Drahtbonden möglicherweise behindern können, kombiniert. Das Bondverfahren sollte flexibel genug sein, um für verschiedene IC-Produktfamilien und ein breites Spektrum von Entwurfs- und Prozeßvariationen verwendet werden zu können. Vorzugsweise sollten diese Innovationen ausgeführt werden, während die Produktzykluszeit verkürzt und der Durchsatz erhöht wird, und ohne daß kostspielige zusätzliche Herstellungseinrichtungen erforderlich wären.
  • Die vorliegende Erfindung sieht Anordnungen und Verfahren gemäß den Ansprüchen vor.
  • Weitere Beispiele bondbarer Anordnungen können den europäischen Patentanmeldungen EP 0949672 und der britischen Anmeldung GB 2184288 entnommen werden.
  • KURZBESCHREIBUNG DER ZEICHNUNG
  • Die vorliegende Erfindung wird nun beispielhaft mit Bezug auf die bevorzugten und als Beispiel dienenden Ausführungsformen beschrieben, die in den Figuren der anliegenden Zeichnung dargestellt sind, wobei:
  • die 1A und 1B schematische Querschnitte der bevorzugten Ausführungsform der Erfindung zeigen,
  • 1A eine bondbare Verkappung gestapelter Schichten über einer Bondkontaktstelle eines integrierten Schaltkreises mit einer Kupfermetallisierung zeigt,
  • 1B die Bondkontaktstelle aus 1A mit einem kugelgebondeten Draht zeigt,
  • 2 einen detaillierteren, jedoch ebenfalls schematischen Querschnitt einer bevorzugten Ausführungsform der Erfindung zeigt,
  • 3 einen detaillierteren, jedoch ebenfalls schematischen Querschnitt einer bevorzugten Ausführungsform der Erfindung zeigt, und
  • 4 ein Blockdiagramm des Prozeßablaufs zur Herstellung der Bondkontaktstellen-Verkappung gemäß der Erfindung zeigt.
  • ANHANG: In der Tabelle sind die berechneten Dicken der Abgrenzungsmetallschichten angeführt, die erforderlich sind, um die Aufwärtsdiffusion des darunterliegenden Metalls, verglichen mit der Abwesenheit des Abgrenzungsmetalls, um mehr als 80% zu verringern.
  • DETAILLIERTE BESCHREIBUNG DER BEVORZUGTEN AUSFÜHRUNGSFORMEN
  • 1A zeigt einen schematischen Querschnitt der bevorzugten Ausführungsform der Erfindung, die allgemein mit 100 bezeichnet ist. Ein integrierter Schaltkreis (IC) hat eine Kupfer-Verbindungsmetallisierung und ist mit einem feuchtigkeitsundurchlässigen Schutzüberzug 101 bedeckt. Dieser Überzug besteht gewöhnlich aus Siliciumnitrid und ist üblicherweise 0,5 bis 1,0 μm dick. Ein Fenster 102 ist in dem Überzug geöffnet, um einen Teil der Kupfermetallisierung 103 freizulegen. In 1A nicht dargestellt ist die Unterschicht, in der das Kupfer eingebettet ist und die seine Diffusion in Teile des ICs verhindert (gewöhnlich aus Tantalnitrid, Tantalsiliciumnitrid, Wolframnitrid, Wolframsiliciumnitrid, Titan, Titannitrid oder Titanwolfram; siehe 3).
  • In 1A sind die dielektrischen IC-Abschnitte 104 nur zusammenfassend angegeben. Diese elektrisch isolierenden Abschnitte können nicht nur die traditionellen durch plasmaverstärkte chemische Dampfabscheidung aufgebrachten Dielektrika, wie Siliciumdioxid, sondern auch neuere dielektrische Materialien mit kleineren Dielektrizitätskonstanten, wie siliciumhaltiges Wasserstoffsilsesquioxan, organische Polyimide, Aerogele und Parylene oder Stapel dielektrischer Schichten einschließlich plasmaerzeugter dielektrischer Schichten oder Ozontetraethylorthosilicatoxid, enthalten. Weil diese Materialien weniger dicht und mechanisch schwächer sind als die vorstehend erwähnten Standardisolatoren, ist das Dielektrikum unter dem Kupfer häufig verstärkt. Beispiele können den US-Patentanmeldungen 09/312 385, eingereicht am 14.05.1999 (Saran u. a., "Fine Pitch System and Method for Reinforcing Bond Pads in Semiconductors") und 09/347 212, eingereicht am 02.07.1999 (Saran, "System and Method for Bonding over Active Integrated Circuits") entnommen werden.
  • Weil Kupfer korrosionsanfällig ist und sich selbst dünne Kupfer(I)oxidfilme schwer bonden lassen, sieht die vorliegende Erfindung Strukturen und Prozesse einer über dem freigelegten Kupfer gebildeten Verkappung vor, wie in den 1, 2 und 3 dargestellt ist. Gemäß der Erfindung besteht die Verkappung aus einem Stapel von Metallen mit koordinierten Dicken, so daß der Stapel drei Anforderungen erfüllt:
    • – Die Verkappung wirkt als eine Abgrenzung gegen die Aufwärtsdiffusion von Kupfer zur Oberfläche der Verkappung, wo das Kupfer den anschließenden Drahtbondvorgang behindern könnte. Insbesondere werden die Verkappung, die Auswahl und die Dicken der Metalle so koordiniert, daß die Verkappung die Aufwärtsdiffusion von Kupfer bei 250°C um mehr als 80%, verglichen mit der Abwesenheit des Abgrenzungsmetalls, verringert.
    • – Die Verkappung wird durch eine Technik hergestellt, welche kostspielige photolithographische Schritte vermeidet. Insbesondere wird ein stromloser Prozeß verwendet, um die Verkappungsmetallschichten aufzubringen.
    • – Die Verkappung hat eine äußere Metalloberfläche, die bondbar ist. Insbesondere können herkömmliche Kugel- und Keilbondtechniken verwendet werden, um Metalldrähte und andere Kopplungselemente metallurgisch mit der Bondkontaktstelle zu verbinden.
  • Wie in den 1B und 2 angegeben ist, ist das Draht-Kugelbonden das bevorzugte Verfahren zur Verwendung von Kopplungselementen, um elektrische Verbindungen zu erzeugen. Ein anderes Verfahren ist das Bandbonden, bei dem Keilbonder eingesetzt werden. Im Gegensatz zum Keilbonden wird das Kugelbonden bei erhöhten Temperaturen ausgeführt, für die die Materialien und Prozesse gemäß dieser Erfindung harmonisiert werden müssen.
  • Der Drahtbondprozeß beginnt mit dem Positionieren sowohl des IC-Chips mit den Bondkontaktstellen als auch des Objekts, mit dem der Chip zu bonden ist, auf einem erwärmten Sockel, um ihre Temperatur auf 170 bis 300°C zu erhöhen. Ein Draht 110 (in 1B) typischerweise aus Gold, einer Goldberylliumlegierung, einer anderen Goldlegierung, Kupfer, Aluminium oder ihren Legierungen, mit einem Durchmesser, der typischerweise von 18 bis 33 μm reicht, wird durch eine erwärmte Kapillare gefädelt, in der die Temperatur gewöhnlich zwischen 200 und 500°C liegt. An der Spitze des Drahts wird unter Verwendung entweder einer Flammen- oder einer Funkentechnik eine Freiluftkugel erzeugt. Die Kugel hat einen typischen Durchmesser, der in etwa das 1,2 bis 1,6-fache des Drahtdurchmessers ist. Die Kapillare wird zur Chip-Bondkontaktstelle (102 in 1A) bewegt, und die Kugel wird gegen die Metallisierung der Bondkontaktstellen-Verkappung (die Schicht 106 in den 1A und 1B) gedrückt. Eine Kombination einer Kompressionskraft und von Ultraschallenergie erzeugt durch Metall-Interdiffusion eine starke metallurgische Bindung. Zur Zeit des Bondens reicht die Temperatur gewöhnlich von 150 bis 270°C. In 1B stellt die schematische Form 111 ein Beispiel für die endgültige Form der angebrachten "Kugel" beim Drahtkugelbonden dar.
  • Es ist für die vorliegende Erfindung wichtig, daß neuere technische Fortschritte beim Drahtbonden nun die Bildung kleiner, jedoch zuverlässiger Kugelkontakte und eine streng gesteuerte Form der Drahtschleife ermöglichen. Es können Kugelabstände erreicht werden, die lediglich zwischen 75 und 40 μm liegen. Diese Fortschritte können beispielsweise im computergestützten Bonder 8020 von Kulicke & Soffa, Willow Grove, PA, USA oder im ABACUS SA von Texas Instruments, Dallas, TX, USA vorgefunden werden. Durch Bewegen der Kapillare in einer vorgegebenen und computergesteuerten Weise durch die Luft wird eine Drahtschleife mit einer genau definierten Form erzeugt. Schließlich erreicht die Kapillare ihr gewünschtes Ziel und wird abgesenkt, so daß sie die Kontaktstelle des Objekts berührt. Mit einem Aufdrücken der Kapillare wird eine metallurgische Stichkontaktierung gebildet, und der Draht wird abgeflammt, um die Kapillare freizugeben. Stichkontakte sind klein, jedoch zuverlässig. Die seitlichen Abmessungen des Sticheindrucks betragen etwa das 1,5 bis 3-fache des Drahtdurchmessers (seine genaue Form hängt von der Form der verwendeten Kapillaren, wie der Wanddicke und dem Abdruck der Kapillaren, ab).
  • Ein Vorteil der vorliegenden Erfindung besteht darin, daß eine Metallverkappungsfläche der Bondkontaktstelle bereitgestellt wird, die hart genug ist, damit die bei einer elektrischen Mehrfachsondenprüfung verwendeten Nadeln mit feinen Spitzen keine Sondenmarkierungen erzeugen. An eine weiche Metalloberfläche, die durch das Eindrücken der Nadel aufgerissen ist, läßt sich besonders schwer bonden, wenn die Fläche der Bondkontaktstelle so klein ist, was einen Trend bei der heutigen Bondkontaktstellen-Schrumpfung darstellt, daß der Eindruck den größten Teil der verfügbaren Bondfläche stört.
  • Gemäß der Erfindung wird die Metallverkappung über dem Kupfer 103 durch zwei Schichten bereitgestellt.
  • Eine Schicht 105 wird über dem Kupfer 203 angeordnet und manchmal auf eine Keimmetallschicht abgeschieden (siehe die 2 und 3). Beispiele für die Schicht 105 sind Nickel, Kobalt, Chrom, Molybdän, Titan, Wolfram und Legierungen von diesen. Diese Metalle sind kostengünstig und können durch elektrodenfreies Galvanisieren aufgebracht werden, sie sind jedoch schlecht bondbar. Von diesen Metallen hat Kupfer einen Diffusionskoeffizienten von weniger als 1 × 10–23 cm2/s bei 250°C. Folglich sind diese Metalle gute Kupfer-Diffusionsabgrenzungen. Die zum Verringern der Kupferdiffusion um mehr als 80% verglichen mit derjenigen bei Abwesenheit der Schichten erforderlichen Schichtdicken werden durch Diffusionsberechnungen erhalten. Im allgemeinen erfüllt eine Abgrenzungsdicke von etwa 0,5 bis 1,5 μm sicher das Kupfer-Reduktionskriterium.
  • Die Schicht 106 wird über der Schicht 105 als die äußerste Schicht der Verkappung angeordnet. Sie ist bondbar, so daß sie die Drahtbondung 111 annehmen kann. Beispiele für die Schicht 106 sind Gold, Platin, Palladium und Silber. Zusätzlich haben diese Metalle für die in der Abgrenzung 105 verwendeten Metalle (wie Nickel) einen Diffusionskoeffizienten von weniger als 1 × 10–14 cm2/s bei 250°C. Folglich sind diese Metalle für die Materialien der Schicht 105 gute Diffusionsabgrenzungen. Wiederum werden die zum Verringern der Aufwärtsdiffusion des in der Schicht 105 verwendeten Metalls um mehr als 80% verglichen mit derjenigen bei Abwesenheit der Schicht 106 erforderlichen Schichtdicken durch Diffusionsberechnungen erhalten. Im allgemeinen erfüllt eine Dicke der äußersten Schicht von 1,5 μm oder etwas weniger sicher das Reduktionskriterium für die Metalldiffusion aus der Schicht 105.
  • Im allgemeinen erfüllt eine Dicke der äußersten Schicht 106 von etwa 0,4 bis 1,5 μm sicher das Reduktionskriterium für aus der Schicht 105 diffundierendes Metall.
  • Der Prozeßablauf des elektrodenfreien Galvanisierens wird in Zusammenhang mit 4 beschrieben. Gewöhnlich passen die galvanisierten Schichten zur Größe der Bondkontaktstellen-Öffnung (102 in 1A). Für Bondkontaktstellen mit Schutzüberzügen verringerter Dicke können jedoch eine oder mehrere der galvanisierten Schichten über den Rand der Öffnung hinaus stromlos aufwachsen gelassen werden. 2 zeigt schematisch ein Beispiel dieses Schichtwachstums. Die Schutzüberzugschicht 201 hat eine verringerte Dicke 201a (beispielsweise an Stelle der üblichen 1,0 μm 0,5 μm). Wenngleich die Metallkeimschicht 208, die direkt über der nicht oxidierten Oberfläche 203a der Kupfermetallisierung 203 galvanisiert ist, leicht in die Öffnung des Überzugs paßt, wachsen die Abgrenzungsschicht 205 und die bondbare Schicht 206 jenseits des Rands der Öffnung. Dieser Verkappungsbereich ist in 2 mit 205a und 206a bezeichnet, und er beeinträchtigt nicht die metallurgische Befestigung der "Drahtkugel" 211, könnte jedoch den minimalen Abstand zu benachbarten Bondkontaktstellen beeinträchtigen.
  • In 3 ist die bevorzugte Ausführungsform der vorliegenden Erfindung zusammenfassend in weiteren Einzelheiten dargestellt, wobei die meisten Abmessungsbereiche in den 1A und 1B erwähnt wurden und die stromlose Galvanisierung und andere Herstellungs-Prozeßschritte anhand 4 erörtert wurden. Der Schutzüberzug 301 hat eine Öffnung, welche die Größe der Bondkontaktstelle definiert, und eine Dicke, die ausreicht, um allen gestapelten Schichten, welche die Bondkontaktstellen-IC-Kupfermetallisierung 303 verkappen, Platz zu bieten. Die Kupferbahn 303 ist in eine Refraktärmetallabschirmung 302 (beispielsweise aus Tantalnitrid) eingebettet, welche von einem Dielektrikum 304 und Metallverstärkungen 304a umgeben ist, wobei die Verfahren vorstehend erwähnt wurden).
  • Der gesäuberten und nicht oxidierten Kupferoberfläche 303a steht die erste Schicht der Verkappung, eine Dünnschicht 308 aus Keimmetall (beispielsweise Palladium, das 5 bis 10 nm dick ist, wobei Zinn eine andere Wahl ist) direkt gegenüber. Der Keimmetallschicht folgt unmittelbar die Metallschicht 305 (beispielsweise aus Nickel) als eine Abgrenzung gegen eine Aufwärtsdiffusion von Kupfer. Auf dieser Abgrenzungsschicht befindet sich eine Metallschicht 306 (beispielsweise aus Gold oder Palladium) als eine Abgrenzung gegen eine Aufwärtsdiffusion von Abgrenzungsmetall (beispielsweise Nickel) und gleichzeitig als die äußerste Schicht der Verkappung, die metallurgisch bondbar ist.
  • Der zum Herstellen der Bondkontaktstellen-Verkappung aus 3 verwendete stromlose Prozeß ist in 4 detailliert dargestellt. Nachdem die Bondkontaktstellen in dem Schutzüberzug geöffnet worden sind, wodurch die Kupfer-IC-Metallisierung in Bondkontaktstellen-Bereichen freigelegt worden ist, beginnt der Prozeß des Aufbringens der Verkappung in Schritt 401, wobei die Abfolge der Prozeßschritte die folgende ist.
    • • Schritt 402: Beschichten der Rückseite des Silicium-IC-Wafers mit Resist unter Verwendung einer Aufschleudertechnik. Diese Beschichtung verhindert eine versehentliche Metallabscheidung auf der Rückseite des Wafers.
    • • Schritt 403: Ausheizen des Resists, typischerweise bei 110°C über einen Zeitraum von etwa 30 bis 60 Minuten.
    • • Schritt 404: Reinigen der freigelegten Bondkontaktstellen-Kupferoberfläche unter Verwendung eines Plasmaveraschungsprozesses über etwa 2 Minuten:
    • • Schritt 405: Reinigen durch Eintauchen des Wafers, der das freigelegte Kupfer der Bondkontaktstellen aufweist, in eine Lösung von Schwefelsäure, Salpetersäure oder einer anderen Säure über etwa 50 bis 60 Sekunden.
    • • Schritt 406: Spülen in einer Überlauf-Spüleinrichtung über etwa 100 bis 180 Sekunden.
    • • Schritt 407: Eintauchen des Wafers in eine katalytische Metallchloridlösung, wie Palladiumchlorid, über etwa 40 bis 80 Sekunden, wodurch die Kupferoberfläche "aktiviert" wird, so daß eine Dünnschicht aus Keimmetall (wie Palladium) auf die reine nicht oxidierte Kupferoberfläche aufgebracht wird.
    • • Schritt 408: Spülen in einer Ausstoß-Spüleinrichtung über etwa 100 bis 180 Sekunden.
    • • Schritt 409: Stromlose Galvanisierung des Abgrenzungsmetalls gegen die Aufwärtsdiffusion von Kupfer. Falls Nickel ausgewählt ist, scheidet die zwischen 150 und 180 Sekunden dauernde Galvanisierung etwa 0,4 bis 0,6 μm dickes Nickel ab.
    • • Schritt 410: Spülen in einer Ausstoß-Spüleinrichtung über etwa 100 bis 180 Sekunden.
    • • Schritt 411: Stromlose Galvanisierung der äußersten Schicht, die bondbar ist und gleichzeitig eine Abgrenzung gegen die Aufwärtsdiffusion des darunterliegenden Abgrenzungsmetalls bereitstellt. Falls Gold oder Palladium ausgewählt ist, scheidet die zwischen 150 und 180 Sekunden dauernde Galvanisierung etwa 0,4 bis 0,6 μm dickes Gold bzw. Palladium ab. Ein bevorzugter Prozeß verwendet zuerst einen Eintauchschritt mit selbstbegrenzender Ersetzung des Oberflächenmetalls. Falls Gold ausgewählt ist, wird die Galvanisierung zwischen 400 und 450 Sekunden etwa 30 nm dickes Gold abscheiden. Als ein zweiter Schritt für eine dickere Metallschicht (0,5 bis 1,5 μm dick) folgt dem Eintauchprozeß ein autokatalytischer Prozeßschritt.
    • • Schritt 412: Spülen in einer Ausstoß-Spüleinrichtung über etwa 100 bis 180 Sekunden.
    • • Schritt 413: Abheben des Schutzresists der Waferrückseite über etwa 8 bis 12 Minuten.
    • • Schritt 414: Schleuderspülen und Trocknen über etwa 6 bis 8 Minuten.
  • Der Herstellungsprozeß der Bondkontaktstellen-Verkappung endet bei 415.
  • Die anschließende metallurgische Verbindung von Metalldrähten oder Bändern durch einen Kugel- oder Keilbondprozeß wurde vorstehend beschrieben.
  • Wenngleich diese Erfindung anhand als Beispiel dienender Ausführungsformen beschrieben wurde, sollte diese Beschreibung nicht als einschränkend angesehen werden. Verschiedene Modifikationen und Kombinationen der als Beispiel dienenden Ausführungsformen sowie andere Ausführungsformen der Erfindung werden Fachleuten beim Lesen der Beschreibung einfallen. Beispielsweise kann die Erfindung auf andere IC-Bondkontaktstellen-Metallisierungen als Kupfer, wie Legierungen von Refraktärmetallen und Edelmetallen, angewendet werden, welche sich durch herkömmliche Kugel- oder Keilbondtechniken nur schwer oder unmöglich bonden lassen. Als ein weiteres Beispiel kann die Erfindung auf eine Stapelverarbeitung ausgedehnt werden, wodurch die Herstellungskosten weiter verringert werden. Als ein weiteres Beispiel kann die Erfindung bei Hybridtechnologien, bei denen ein Draht-/Bandbonden und Lötverbindungen eingesetzt werden, verwendet werden.

Claims (13)

  1. Anordnung für metallurgische Verbindungen zwischen Metalldrähten (110) und Bondkontaktstellen, die auf einem integrierten Schaltkreis angeordnet sind, der eine Kupfer-Verbindungsmetallisierung aufweist, mit: einer Bondkontaktstellen-Oberfläche aus nicht oxidiertem Kupfer (103/203), einer Schicht (105/205) aus Abgrenzungsmetall, die einer Kupferdiffusion Widerstand entgegensetzt und auf die Kupferoberfläche aufgebracht ist, und einer äußersten Schicht (206/206a) aus bondbarem Metall, wobei einer der Metalldrähte mit dem äußersten bondbaren Metall gebondet ist, dadurch gekennzeichnet, daß: das Abgrenzungsmetall und seine Dicke so koordiniert sind, daß die Schicht die Diffusion von Kupfer bei 250°C, verglichen mit dem Fall, in dem das Abgrenzungsmetall nicht vorhanden ist, um mehr als 80% verringert, die Dicke des bondbaren Metalls derart ist, daß die äußerste Schicht die Diffusion des Abgrenzungsmetalls bei 250°C, verglichen mit dem Fall, in dem das bondbare Metall nicht vorhanden ist, um mehr als 80% verringert, und daß sie weiter aufweist: eine dünne Keimmetallschicht (208) zwischen dem nicht oxidierten Kupfer und der Abgrenzungsmetallschicht, wobei das Keimmetall Palladium oder Zinn ist.
  2. Anordnung nach Anspruch 1, wobei die Abgrenzungsmetallschicht aus einer Gruppe ausgewählt ist, die aus Nickel, Kobalt, Chrom, Molybdän, Titan, Wolfram und Legierungen von diesen besteht.
  3. Anordnung nach Anspruch 1 oder 2, wobei die bondbare Metallschicht aus einer Gruppe ausgewählt ist, die aus Gold, Platin, Palladium und Silber besteht.
  4. Anordnung nach einem der vorstehenden Ansprüche, wobei die Metalldrähte aus einer Gruppe ausgewählt sind, die aus Gold, Kupfer, Aluminium und Legierungen von diesen besteht.
  5. Verfahren zum Bilden metallurgischer Verbindungen zwischen Metalldrähten und Bondkontaktstellen, die auf integrierten Schaltkreisen angeordnet sind, die eine Kupfer-Verbindungsmetallisierung aufweisen, mit den folgenden Schritten: Aufbringen einer Schicht eines Keimmetalls aus Palladium oder Zinn auf die Oberfläche der Kupfermetallisierung der Bondkontaktstellen, Galvanisieren einer Schicht aus Abgrenzungsmetall mit einer ausreichenden Dicke durch stromlose Abscheidung, um eine Kupferdiffusion bei 250°C, verglichen mit dem Fall, in dem das Abgrenzungsmetall nicht vorhanden ist, um mehr als 80% zu verringern, Galvanisieren einer Schicht eines bondbaren Metalls mit einer ausreichenden Dicke durch stromlose Abscheidung, um die Diffusion von Abgrenzungsmetall bei 250°C, verglichen mit dem Fall, in dem das bondbare Metall nicht vorhanden ist, um mehr als 80% zu verringern, um die äußerste bondbare Metallschicht der Bondkontaktstelle zu bilden, und Bonden von einem der Metalldrähte auf das äußerste Metall.
  6. Verfahren nach Anspruch 5, wobei der Drahtbondschritt ein Kugelbonden oder ein Keilbonden einschließt.
  7. Verfahren nach Anspruch 5 oder 6, wobei die Bondkontaktstellen durch einen Prozeß gebildet werden, bei dem: ein Schutzüberzug auf die Oberfläche des integrierten Schaltkreises, einschließlich der Oberflächenabschnitte, die eine Kupfermetallisierung aufweisen, aufgebracht wird, und ausgewählte Bereiche des Überzugs durch photolithographische Techniken geöffnet werden, wodurch die Oberfläche der Kupfermetallisierung freigelegt wird.
  8. Verfahren nach Anspruch 7, welches weiter einen Reinigungsschritt nach dem Öffnungsschritt aufweist, wobei die freigelegte Kupferoberfläche in eine Lösung von Schwefelsäure, Salpetersäure oder einer anderen Säure eingetaucht wird.
  9. Verfahren nach einem der Ansprüche 5 bis 8, wobei bei dem Schritt des Aufbringens des Keimmetalls die Bondkontaktstellen in eine katalytische Metallchloridlösung eingetaucht werden.
  10. Verfahren nach Anspruch 9, wobei das Metallchlorid Palladiumchlorid einschließt.
  11. Verfahren nach einem der Ansprüche 5 bis 10, wobei die stromlose Galvanisierung der bondbaren Metallschicht eine Tauchgalvanisierung ist.
  12. Verfahren nach Anspruch 11, wobei die stromlose Galvanisierung der bondbaren Metallschicht eine Tauchgalvanisierung, gefolgt von einer autokatalytischen Galvanisierung, ist.
  13. Verfahren nach einem der Ansprüche 5 bis 12, mit dem weiteren Schritt des elektrischen Prüfens des äußersten Metalls der Bondkontaktstelle vor dem Bondschritt durch Sonden, wobei im wesentlichen keine Sondenmarkierungen verbleiben.
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EP1139413B1 (de) 2005-03-16
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US20050106851A1 (en) 2005-05-19
EP1139413A3 (de) 2002-06-12
CN1317389A (zh) 2001-10-17
JP2001319946A (ja) 2001-11-16
EP1139413A2 (de) 2001-10-04
US6800555B2 (en) 2004-10-05
KR100741592B1 (ko) 2007-07-20
CN1245272C (zh) 2006-03-15

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