KR980005659A - 반도체 장치 및 그 제조방법 - Google Patents

반도체 장치 및 그 제조방법 Download PDF

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KR980005659A
KR980005659A KR1019970023983A KR19970023983A KR980005659A KR 980005659 A KR980005659 A KR 980005659A KR 1019970023983 A KR1019970023983 A KR 1019970023983A KR 19970023983 A KR19970023983 A KR 19970023983A KR 980005659 A KR980005659 A KR 980005659A
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input
semiconductor substrate
output terminal
terminal portion
metal
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KR100290193B1 (ko
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아키토 요시다
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니시무로 타이조
가부시기가이샤 도시바
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Abstract

반도체 장치에 형성되는 입·출력 단자가 다이소트 단자부(101)와 범프를 갖는 입·출력 단자부(102)로 이루어져 종래의 프로브 카드를 이용하여도 다이소트를 용이하게 행하 수 있는 반도체 장치 및 그 제조 방법을 제공한다. 반도체 기판(1)에는 입·출력 단자 및 입·출력 회로가 형성되어 있다. 반도체 기판(1)의 주면은 집적 회로가 형성되어 있는내부 영역부(1a)와 입·출력 회로(11)가 형성되어 있는 주변 영역(1b)으로 나누어진다. 임·출력 회로(11)는 양 영역의 경계에 배치되어 있다. 입·출력 단자는 주변 영역(1b)에 배치되고, 범프가 형성되지 않은 테스트용의 다이소트 단자부(101)와 내부 영역 (1a)에 배치되며, 범프가 형성된 접속용 입·출력 단자부(102)로 구성되어 있다. 다이소트 단자부 (101)와 입·출력 단자부(102)는 예컨대, 양 단자부를 구성하는 금속 배선으로로부터 하층의 접속 배선 (103)에 의해 적기적으로 접속되어 있다.

Description

반도체 장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 본 발명의 제1 실시예의 반도체 장치의 평면도.

Claims (10)

  1. 반도체 기판과,
    상기 반도체 기판상에 형성된 복수의 입·출력 단자를 구비하고, 상기 입·출력 단자는, 상기 반도체 기판상의 주변 영역에 설치된 다이소트 단자부와 상기 반도체 기판상의 내부 영역에 설치되고, 범프가 형성되어 있는 입·출력 단자부를 가지며, 이 다이소트 단자부와 입·출력 단자부는 전기적으로 접속되어 있는 것을 특징으로 하는 반도체 장치.
  2. 제 1 항에 있어서, 상기 반도체 기판의 상기 주변 영역에는 상기 반도체 기판의 변을 따라 입·출력 회로부가 형성되어 있고, 상기 다이소트 단자부는 이 입·출력 회로부와 상기 반도체 기판의 변과의 사이에 형성되어 있는 것을 특징으로 하는 반도체 장치.
  3. 제 1 항에 있어서, 상기 입·출력 단자부는 상기 반도체 기판상의 내부 영역에 있어서 등간격으로 배열되어 있는 것을 특징으로 하는 반도체 장치.
  4. 제 3 항에 있어서, 상기 입·출력 단자부는 거의 정방형이고, 그 대향하는 2변에 평행한 중심선은 상기 반도체 기판의 임의의 변에 대하여 45° 기울어 있는 것을 특징으로 하는 반도체 장치.
  5. 제 1 항에 있어서, 상기 반도체 기판상에는 금속 배선으로 구성된 다층 배선이 형성되어 있고 이 다층 배선의 상기 입·출력 단자부와 상기 다이소트 단자부를 전기적으로 접속하는 배선에는 이 다층 배선의 소정 층의 배선을 이용하고, 상기 입·출력 단자부 및 상기 다이소트 단자부에는 이 소정 층의 배선으로부터 상층의 배선을 이용하는 것을 특징으로 하는 반도체 장치.
  6. 제 1 항에 있어서, 다이소트 단자부가 입·출력 단자부만으로 이루어지는 입·출력 단자를 추가로 갖는 것을 특징으로 하는 반도체 장치.
  7. 제 1 항에 있어서, 상기 다이소트 단자부는 표면에 도전성의 내에칭성 보호막이 피복되어 있는 금속 배선으로 이루어지는 것을 특징으로 하는 반도체 장치.
  8. 제 7 항에 있어서, 상기 내에칭성 보호막은 상기 배리어 메탈을 에칭하는 에칭액에 대하여 이 배리어 메탈보다 내에칭성이 높은 것을 특징으로 하는 반도체 장치.
  9. 반도체 기판상에 금속막을 형성하는 공정과,
    상기 금속막을 패터닝하여 상기 반도체 기판의 내부 영역상에 금속 배선으로 이루어지는 복수의 입·출력 단자부와, 상기 반도체 기판의 주변 영역상에 금속 배선으로 이루어지고, 이 입·출력 단자부와는 전기적으로 접속되어 있는 다이소트 단자부를 형성하는 공정과,
    상기 입·출력 단자부및 상기 다이소트 단자부의 상기 금속 배선상에 도전성의 내에칭 보호막을 형성하는 공정과, 상기 반도체 기판상에 배리어 메탈 형성용 금속막을 형성하는 공정과,
    상기 입·출력 단자부 위에 상기 내에칭 보호막 및 상기 배리어 메탈 형성용 금속막을 통해 범프를 형성하는 공정과,
    상기 배리어 메탈 형서용 금속막을 패터닝하여, 상기 입·출력 단자부의 상기 범프와 상기 내에칭 보호막과의 사이에 배리어 메탈을 형성하는 공정을 갖는 것을 특징으로 하는 반도체 장치의 제조방법.
  10. 반도체 기판상에 금속막을 형성하는 공정과, 상기 금속막상에 도전성의 내에칭 보호막을 형성하는 공정과, 상기 금속막 및 상기 내에칭 보호막을 패터닝하여 상기 반도체 기판의 내부 영역상에 상기 내에칭 보호막으로 피복된 금속 배선으로 이루어지는 복수의 입·출력 단자부와, 상기 반도체 기판의 주변 영역상에 상기 내에칭 보호막으로 피복된 금속 배선으로 이루어지며, 이 입·출력 단자부와는 전기적으로 접속되어 있는 다이소트 단자부를 형성하는 공정과, 상기 반도체 기판상에 배리어 메탈 형성용 금속막을 형성하는 공정과, 상기 입·출력 단자부 위에 상기 내에칭 보호막 및 상기 배리어 메탈 형성용 금속막을 통해 범프를 형성하는 공정과, 상기 배리어 메탈 형성용 금속막을 패터닝하여, 상기 입·출력 단자부의 상기 범프와 상기 내에칭 보호막과의 사이에 배리어 메탈을 형성하는 공정을 갖는 것을 특징으로 하는 반도체 장치의 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970023983A 1996-06-12 1997-06-11 반도체장치및그제조방법 KR100290193B1 (ko)

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TW332900B (en) 1998-06-01
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JPH09330934A (ja) 1997-12-22
US6445001B2 (en) 2002-09-03
US20010011771A1 (en) 2001-08-09

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