KR910010756A - 수광수자 - Google Patents
수광수자 Download PDFInfo
- Publication number
- KR910010756A KR910010756A KR1019900018431A KR900018431A KR910010756A KR 910010756 A KR910010756 A KR 910010756A KR 1019900018431 A KR1019900018431 A KR 1019900018431A KR 900018431 A KR900018431 A KR 900018431A KR 910010756 A KR910010756 A KR 910010756A
- Authority
- KR
- South Korea
- Prior art keywords
- light receiving
- regions
- light
- receiving element
- region
- Prior art date
Links
- 230000031700 light absorption Effects 0.000 claims 7
- 239000013078 crystal Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 239000013307 optical fiber Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4249—Packages, e.g. shape, construction, internal or external details comprising arrays of active devices and fibres
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4292—Coupling light guides with opto-electronic elements the light guide being disconnectable from the opto-electronic element, e.g. mutually self aligning arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도(a) (b) 및 (c)는 각각 다른 본 발명의 실시예를 표시한 단면도.
Claims (5)
- 반도체결정의 광흡수영역에 수광영역이 복수개 형성된 수광소자에 있어서, 인접하는 상기 수광영역사이의 광흡수영역의 일부가 공핍화 되어있는 것을 특징으로 하는 수광소자.
- 제1항에 있어서, 상기 수광영역사이의 광흡수영역의 일부를 공핍화 또는 반전하기 위하여 광흡수영역사이에 불순물을 도입한것을 특징으로한 수광소자.
- 제1항에 있어서, 상기 수광영역사이의 광흡수영역의 일부를 공핍화하기 위하여 광흡수영역사이의 수광영역표면에 쇼트키전극을 형성한 것을 특징으로 하는 수광소자.
- 제1항에 있어서, 상기수광소자의 인접하는 수광영역상이의 광흡수영역의 표면에 반사방지막이 형성되어있는것을 특징으로 하는 수광소자.
- 제2항 및 제3항에 있어서, 상기 광파이버를 상기 수광영역에 각각 결합가능한것을 특징으로 하는 수광소자.※ 참고 사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1-296865 | 1989-11-14 | ||
JP1296865A JPH03156980A (ja) | 1989-11-14 | 1989-11-14 | 受光素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR910010756A true KR910010756A (ko) | 1991-06-29 |
Family
ID=17839164
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900018431A KR910010756A (ko) | 1989-11-14 | 1990-11-14 | 수광수자 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6114737A (ko) |
EP (1) | EP0428159B1 (ko) |
JP (1) | JPH03156980A (ko) |
KR (1) | KR910010756A (ko) |
CA (1) | CA2030008C (ko) |
DE (1) | DE69033259T2 (ko) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2088612C (en) * | 1992-02-03 | 2003-04-15 | Yoshiki Kuhara | Semiconductor light detecting device |
DE9321382U1 (de) * | 1992-10-30 | 1997-10-09 | Wolter Klaus | Vorrichtung zum Übertragen von Daten |
KR100322579B1 (ko) * | 1998-10-08 | 2002-03-08 | 윤종용 | 광 커넥터 모듈 |
EP1077384A4 (en) * | 1999-02-05 | 2005-02-09 | Furukawa Electric Co Ltd | COLLECTIVE CONNECTION STRUCTURE OF A PLURALITY OF OPTICAL CONNECTORS, OPTICAL CONNECTOR ARRANGEMENT DEVICE AND ADAPTER FOR OPTICAL CONNECTORS |
JP3959662B2 (ja) * | 1999-03-23 | 2007-08-15 | セイコーエプソン株式会社 | 光信号伝送装置およびその製造方法 |
US6774578B2 (en) * | 2000-09-19 | 2004-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Self light emitting device and method of driving thereof |
US6844607B2 (en) | 2000-10-06 | 2005-01-18 | The Furukawa Electric Co., Ltd. | Photodiode array device, a photodiode module, and a structure for connecting the photodiode module and an optical connector |
JP2002185032A (ja) * | 2000-10-06 | 2002-06-28 | Furukawa Electric Co Ltd:The | 受光アレイ素子、受光モジュール及び受光モジュールと光コネクタとの接続構造 |
JP2003282939A (ja) * | 2002-03-26 | 2003-10-03 | Oki Degital Imaging:Kk | 半導体発光装置及びその製造方法 |
FR2855655B1 (fr) * | 2003-05-26 | 2005-08-19 | Commissariat Energie Atomique | Detecteur de rayonnement infrarouge photovoltaique a grille conductrice independante et tridimensionnelle |
DE102007037020B3 (de) * | 2007-08-06 | 2008-08-21 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Avalanche-Photodiode |
US8039780B2 (en) * | 2009-04-08 | 2011-10-18 | Sumitomo Electric Industries, Ltd. | Photodiode array and image pickup device using the same |
US8247881B2 (en) * | 2009-04-27 | 2012-08-21 | University Of Seoul Industry Cooperation Foundation | Photodiodes with surface plasmon couplers |
DE102013018789A1 (de) | 2012-11-29 | 2014-06-05 | Infineon Technologies Ag | Steuern lichterzeugter Ladungsträger |
FR3006105B1 (fr) * | 2013-05-22 | 2016-09-09 | New Imaging Tech | Matrice de photodiode a absorption reglable de charge |
US10854646B2 (en) * | 2018-10-19 | 2020-12-01 | Attollo Engineering, LLC | PIN photodetector |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4044373A (en) * | 1967-11-13 | 1977-08-23 | Hitachi, Ltd. | IGFET with gate protection diode and antiparasitic isolation means |
US3703669A (en) * | 1971-08-12 | 1972-11-21 | Motorola Inc | Photocurrent cross talk isolation |
JPS5213918B2 (ko) * | 1972-02-02 | 1977-04-18 | ||
US3845296A (en) * | 1973-10-10 | 1974-10-29 | Us Army | Photosensitive junction controlled electron emitter |
DE3650362T2 (de) * | 1986-01-06 | 1996-01-25 | Semiconductor Energy Lab | Photoelektrische Umwandlungsvorrichtung mit hoher Ansprechgeschwindigkeit und Herstellungsverfahren. |
-
1989
- 1989-11-14 JP JP1296865A patent/JPH03156980A/ja active Pending
-
1990
- 1990-11-14 EP EP90121801A patent/EP0428159B1/en not_active Expired - Lifetime
- 1990-11-14 KR KR1019900018431A patent/KR910010756A/ko not_active Application Discontinuation
- 1990-11-14 DE DE69033259T patent/DE69033259T2/de not_active Expired - Fee Related
- 1990-11-14 CA CA002030008A patent/CA2030008C/en not_active Expired - Fee Related
-
1994
- 1994-11-28 US US08/348,991 patent/US6114737A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0428159B1 (en) | 1999-08-25 |
CA2030008C (en) | 1997-03-04 |
JPH03156980A (ja) | 1991-07-04 |
US6114737A (en) | 2000-09-05 |
EP0428159A1 (en) | 1991-05-22 |
DE69033259D1 (de) | 1999-09-30 |
DE69033259T2 (de) | 2000-01-05 |
CA2030008A1 (en) | 1991-05-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR910010756A (ko) | 수광수자 | |
KR910021602A (ko) | 액정표시장치 | |
DE59801875D1 (de) | Integrierte optische schaltung | |
DE3776017D1 (de) | Fiberoptischer polarisator mit indium-ummantelung. | |
KR900005195A (ko) | 광 검출기 | |
KR900008701A (ko) | 반도체 장치의 제조방법 | |
KR910019269A (ko) | 반도체 수광소자 | |
CA2081149A1 (en) | Integrated optical component | |
KR860006851A (ko) | 반도체 레이저 | |
KR920000045A (ko) | 전송표시장치 | |
JPS55151377A (en) | Photo semiconductor device | |
KR880003388A (ko) | 표시장치용면판 | |
KR850002706A (ko) | 반도체 레이저 | |
KR860002020A (ko) | 집광 렌즈 | |
KR920002828A (ko) | 높은 동위체 순도의 단결정 다이아몬드로부터 제조된 방사선에 견고한 광학 제품 | |
JPS57113292A (en) | Semiconductor light sensing device | |
TW428329B (en) | Photointerrupter and case thereof | |
JPS6449282A (en) | Integrated circuit device with built-in photodiode | |
KR920001224A (ko) | 액정 표시소자 | |
KR910008457A (ko) | 액정 표시소자의 제조방법 | |
KR850700180A (ko) | 개량된 p-i-n 및 에벌란치 광 다이오드 | |
KR910017650A (ko) | P+ s/d를 이용한 포토 검출기의 구조 | |
KR910012350A (ko) | GaAs 단결정 제조방법 | |
KR920011003A (ko) | 화합물 반도체 레이저 | |
KR910005356A (ko) | 컬러 음극선관의 노출장치에서의 복합보정렌즈 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |