FR3006105B1 - Matrice de photodiode a absorption reglable de charge - Google Patents

Matrice de photodiode a absorption reglable de charge

Info

Publication number
FR3006105B1
FR3006105B1 FR1354597A FR1354597A FR3006105B1 FR 3006105 B1 FR3006105 B1 FR 3006105B1 FR 1354597 A FR1354597 A FR 1354597A FR 1354597 A FR1354597 A FR 1354597A FR 3006105 B1 FR3006105 B1 FR 3006105B1
Authority
FR
France
Prior art keywords
adjustable load
load absorption
photodiode matrix
photodiode
matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1354597A
Other languages
English (en)
Other versions
FR3006105A1 (fr
Inventor
Yang Ni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
New Imaging Technologies SAS
Original Assignee
New Imaging Technologies SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by New Imaging Technologies SAS filed Critical New Imaging Technologies SAS
Priority to FR1354597A priority Critical patent/FR3006105B1/fr
Priority to PCT/EP2014/060395 priority patent/WO2014187840A1/fr
Priority to EP14725184.7A priority patent/EP3000132A1/fr
Publication of FR3006105A1 publication Critical patent/FR3006105A1/fr
Application granted granted Critical
Publication of FR3006105B1 publication Critical patent/FR3006105B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14694—The active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
FR1354597A 2013-05-22 2013-05-22 Matrice de photodiode a absorption reglable de charge Active FR3006105B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1354597A FR3006105B1 (fr) 2013-05-22 2013-05-22 Matrice de photodiode a absorption reglable de charge
PCT/EP2014/060395 WO2014187840A1 (fr) 2013-05-22 2014-05-21 Matrice de photodiode à absorption réglable de charge
EP14725184.7A EP3000132A1 (fr) 2013-05-22 2014-05-21 Matrice de photodiode à absorption réglable de charge

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1354597A FR3006105B1 (fr) 2013-05-22 2013-05-22 Matrice de photodiode a absorption reglable de charge

Publications (2)

Publication Number Publication Date
FR3006105A1 FR3006105A1 (fr) 2014-11-28
FR3006105B1 true FR3006105B1 (fr) 2016-09-09

Family

ID=49378370

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1354597A Active FR3006105B1 (fr) 2013-05-22 2013-05-22 Matrice de photodiode a absorption reglable de charge

Country Status (3)

Country Link
EP (1) EP3000132A1 (fr)
FR (1) FR3006105B1 (fr)
WO (1) WO2014187840A1 (fr)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03156980A (ja) * 1989-11-14 1991-07-04 Sumitomo Electric Ind Ltd 受光素子
JP3221402B2 (ja) * 1998-06-22 2001-10-22 住友電気工業株式会社 受光素子と受光装置
US6555890B2 (en) * 2000-05-23 2003-04-29 Sensors Unlimited, Inc. Method for combined fabrication of indium gallium arsenide/indium phosphide avalanche photodiodes and p-i-n photodiodes
JP2005259829A (ja) * 2004-03-10 2005-09-22 Sumitomo Electric Ind Ltd 裏面入射型受光素子アレイ
US7755079B2 (en) * 2007-08-17 2010-07-13 Sandia Corporation Strained-layer superlattice focal plane array having a planar structure
US7968963B2 (en) * 2009-04-08 2011-06-28 Sumitomo Electric Industries, Ltd. Photodiode array and image pickup device using the same
EP2491600A4 (fr) * 2009-10-23 2015-04-22 Lockheed Corp Photo-détecteur à barrière comportant une couche supérieure plane
JP5435065B2 (ja) * 2012-04-16 2014-03-05 住友電気工業株式会社 受光装置

Also Published As

Publication number Publication date
FR3006105A1 (fr) 2014-11-28
EP3000132A1 (fr) 2016-03-30
WO2014187840A1 (fr) 2014-11-27

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