DE69033259D1 - Lichtempfangsvorrichtung - Google Patents

Lichtempfangsvorrichtung

Info

Publication number
DE69033259D1
DE69033259D1 DE69033259T DE69033259T DE69033259D1 DE 69033259 D1 DE69033259 D1 DE 69033259D1 DE 69033259 T DE69033259 T DE 69033259T DE 69033259 T DE69033259 T DE 69033259T DE 69033259 D1 DE69033259 D1 DE 69033259D1
Authority
DE
Germany
Prior art keywords
light receiving
receiving device
light
receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69033259T
Other languages
English (en)
Other versions
DE69033259T2 (de
Inventor
Ichiro Tonai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69033259D1 publication Critical patent/DE69033259D1/de
Publication of DE69033259T2 publication Critical patent/DE69033259T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09Devices sensitive to infrared, visible or ultraviolet radiation
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4249Packages, e.g. shape, construction, internal or external details comprising arrays of active devices and fibres
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4292Coupling light guides with opto-electronic elements the light guide being disconnectable from the opto-electronic element, e.g. mutually self aligning arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/1446Devices controlled by radiation in a repetitive configuration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/548Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
DE69033259T 1989-11-14 1990-11-14 Lichtempfangsvorrichtung Expired - Fee Related DE69033259T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1296865A JPH03156980A (ja) 1989-11-14 1989-11-14 受光素子

Publications (2)

Publication Number Publication Date
DE69033259D1 true DE69033259D1 (de) 1999-09-30
DE69033259T2 DE69033259T2 (de) 2000-01-05

Family

ID=17839164

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69033259T Expired - Fee Related DE69033259T2 (de) 1989-11-14 1990-11-14 Lichtempfangsvorrichtung

Country Status (6)

Country Link
US (1) US6114737A (de)
EP (1) EP0428159B1 (de)
JP (1) JPH03156980A (de)
KR (1) KR910010756A (de)
CA (1) CA2030008C (de)
DE (1) DE69033259T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2088612C (en) * 1992-02-03 2003-04-15 Yoshiki Kuhara Semiconductor light detecting device
DE59306694D1 (de) * 1992-10-30 1997-07-10 Klaus Wolter Vorrichtung zum übertragen von daten
WO2000046624A1 (fr) * 1997-08-07 2000-08-10 The Furukawa Electric Co. Ltd. Structure de raccordement collectif d'une pluralite de connecteurs optiques, dispositif d'agencement de connecteurs optiques et adaptateur pour connecteurs optiques
KR100322579B1 (ko) * 1998-10-08 2002-03-08 윤종용 광 커넥터 모듈
JP3959662B2 (ja) * 1999-03-23 2007-08-15 セイコーエプソン株式会社 光信号伝送装置およびその製造方法
US6774578B2 (en) * 2000-09-19 2004-08-10 Semiconductor Energy Laboratory Co., Ltd. Self light emitting device and method of driving thereof
JP2002185032A (ja) * 2000-10-06 2002-06-28 Furukawa Electric Co Ltd:The 受光アレイ素子、受光モジュール及び受光モジュールと光コネクタとの接続構造
US6844607B2 (en) 2000-10-06 2005-01-18 The Furukawa Electric Co., Ltd. Photodiode array device, a photodiode module, and a structure for connecting the photodiode module and an optical connector
JP2003282939A (ja) * 2002-03-26 2003-10-03 Oki Degital Imaging:Kk 半導体発光装置及びその製造方法
FR2855655B1 (fr) 2003-05-26 2005-08-19 Commissariat Energie Atomique Detecteur de rayonnement infrarouge photovoltaique a grille conductrice independante et tridimensionnelle
DE102007037020B3 (de) * 2007-08-06 2008-08-21 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Avalanche-Photodiode
US8039780B2 (en) * 2009-04-08 2011-10-18 Sumitomo Electric Industries, Ltd. Photodiode array and image pickup device using the same
US8247881B2 (en) * 2009-04-27 2012-08-21 University Of Seoul Industry Cooperation Foundation Photodiodes with surface plasmon couplers
DE102013018789A1 (de) * 2012-11-29 2014-06-05 Infineon Technologies Ag Steuern lichterzeugter Ladungsträger
FR3006105B1 (fr) * 2013-05-22 2016-09-09 New Imaging Tech Matrice de photodiode a absorption reglable de charge
US10854646B2 (en) 2018-10-19 2020-12-01 Attollo Engineering, LLC PIN photodetector

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4044373A (en) * 1967-11-13 1977-08-23 Hitachi, Ltd. IGFET with gate protection diode and antiparasitic isolation means
US3703669A (en) * 1971-08-12 1972-11-21 Motorola Inc Photocurrent cross talk isolation
JPS5213918B2 (de) * 1972-02-02 1977-04-18
US3845296A (en) * 1973-10-10 1974-10-29 Us Army Photosensitive junction controlled electron emitter
DE3650362T2 (de) * 1986-01-06 1996-01-25 Semiconductor Energy Lab Photoelektrische Umwandlungsvorrichtung mit hoher Ansprechgeschwindigkeit und Herstellungsverfahren.

Also Published As

Publication number Publication date
US6114737A (en) 2000-09-05
KR910010756A (ko) 1991-06-29
CA2030008C (en) 1997-03-04
EP0428159A1 (de) 1991-05-22
EP0428159B1 (de) 1999-08-25
DE69033259T2 (de) 2000-01-05
CA2030008A1 (en) 1991-05-15
JPH03156980A (ja) 1991-07-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee