KR920007240A - 포토디텍터 제조방법 - Google Patents

포토디텍터 제조방법 Download PDF

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Publication number
KR920007240A
KR920007240A KR1019900014508A KR900014508A KR920007240A KR 920007240 A KR920007240 A KR 920007240A KR 1019900014508 A KR1019900014508 A KR 1019900014508A KR 900014508 A KR900014508 A KR 900014508A KR 920007240 A KR920007240 A KR 920007240A
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KR
South Korea
Prior art keywords
photo detector
detector manufacturing
manufacturing
shallow
ccd
Prior art date
Application number
KR1019900014508A
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English (en)
Other versions
KR940000260B1 (ko
Inventor
정원영
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019900014508A priority Critical patent/KR940000260B1/ko
Publication of KR920007240A publication Critical patent/KR920007240A/ko
Application granted granted Critical
Publication of KR940000260B1 publication Critical patent/KR940000260B1/ko

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

내용 없음

Description

포토디텍터 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도(a)(b)는 본 발명에 따른 포토디텍터 제조 공정도
제3도(a)(b)는 포텐셜 상태도

Claims (1)

  1. P+/N/P 구조의 포토 디텍터를 갖는 CCD이 제조공정에 있어서, 도핑된 폴리를 디포지션한후 패터닝하고, 어넬링하여 P웰과 포토디텍터 표면상에 디퓨젼시켜 얕은 P+영역을 형성하는 것을 특징으로 하는 포토 디텍터 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900014508A 1990-09-13 1990-09-13 포토디텍터 제조방법 KR940000260B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900014508A KR940000260B1 (ko) 1990-09-13 1990-09-13 포토디텍터 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900014508A KR940000260B1 (ko) 1990-09-13 1990-09-13 포토디텍터 제조방법

Publications (2)

Publication Number Publication Date
KR920007240A true KR920007240A (ko) 1992-04-28
KR940000260B1 KR940000260B1 (ko) 1994-01-12

Family

ID=19303585

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900014508A KR940000260B1 (ko) 1990-09-13 1990-09-13 포토디텍터 제조방법

Country Status (1)

Country Link
KR (1) KR940000260B1 (ko)

Also Published As

Publication number Publication date
KR940000260B1 (ko) 1994-01-12

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