KR910015076A - Ccd 영상센서에서 포토 다이오드의 ofd 억제를 위한 방법 - Google Patents

Ccd 영상센서에서 포토 다이오드의 ofd 억제를 위한 방법 Download PDF

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Publication number
KR910015076A
KR910015076A KR1019900000951A KR900000951A KR910015076A KR 910015076 A KR910015076 A KR 910015076A KR 1019900000951 A KR1019900000951 A KR 1019900000951A KR 900000951 A KR900000951 A KR 900000951A KR 910015076 A KR910015076 A KR 910015076A
Authority
KR
South Korea
Prior art keywords
ofd
photodiode
suppressing
image sensor
ccd image
Prior art date
Application number
KR1019900000951A
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English (en)
Other versions
KR930000914B1 (ko
Inventor
이성민
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019900000951A priority Critical patent/KR930000914B1/ko
Priority to NL9100082A priority patent/NL9100082A/nl
Priority to GB9101669A priority patent/GB2240429A/en
Priority to DE4102591A priority patent/DE4102591A1/de
Priority to JP3026788A priority patent/JPH04212460A/ja
Publication of KR910015076A publication Critical patent/KR910015076A/ko
Application granted granted Critical
Publication of KR930000914B1 publication Critical patent/KR930000914B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)

Abstract

내용 없음

Description

CCD 영상센서에서 포토 다이오드의 OFD 억제를 위한 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명의 공정순서도.

Claims (1)

  1. N-기판(1)위에 산화막(2)을 형성하는 N+이온주입을 한후 P-에피택셜(3)을 성장시키며 N-PD(4)와 N-웰(5)을 형성하여 PD의 특성을 용이하게 맞출수 있게 함을 특징으로 하는 CCD영상센서에서 포토 다이오드의 OFD 억제을 위한 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900000951A 1990-01-29 1990-01-29 Ccd 영상센서에서 포토 다이오드의 ofd 억제를 위한방법 KR930000914B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019900000951A KR930000914B1 (ko) 1990-01-29 1990-01-29 Ccd 영상센서에서 포토 다이오드의 ofd 억제를 위한방법
NL9100082A NL9100082A (nl) 1990-01-29 1991-01-17 Werkwijze voor de vervaardiging van een fotodiode van een ccd beeldsensor.
GB9101669A GB2240429A (en) 1990-01-29 1991-01-25 Method for manufacturing a photo diode for a CCD image sensor
DE4102591A DE4102591A1 (de) 1990-01-29 1991-01-29 Verfahren zum herstellen einer photodiode fuer einen ccd-bildwandler
JP3026788A JPH04212460A (ja) 1990-01-29 1991-01-29 Ｃｃｄイメージセンサーにおけるフォトダイオードの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900000951A KR930000914B1 (ko) 1990-01-29 1990-01-29 Ccd 영상센서에서 포토 다이오드의 ofd 억제를 위한방법

Publications (2)

Publication Number Publication Date
KR910015076A true KR910015076A (ko) 1991-08-31
KR930000914B1 KR930000914B1 (ko) 1993-02-11

Family

ID=19295572

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900000951A KR930000914B1 (ko) 1990-01-29 1990-01-29 Ccd 영상센서에서 포토 다이오드의 ofd 억제를 위한방법

Country Status (5)

Country Link
JP (1) JPH04212460A (ko)
KR (1) KR930000914B1 (ko)
DE (1) DE4102591A1 (ko)
GB (1) GB2240429A (ko)
NL (1) NL9100082A (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3311004B2 (ja) * 1991-03-28 2002-08-05 株式会社東芝 固体撮像装置
US6580139B1 (en) * 2000-07-20 2003-06-17 Emcore Corporation Monolithically integrated sensing device and method of manufacture
US6852565B1 (en) * 2003-07-10 2005-02-08 Galaxcore, Inc. CMOS image sensor with substrate noise barrier
US7388187B1 (en) * 2007-03-06 2008-06-17 Taiwan Semiconductor Manufacturing Company, Ltd. Cross-talk reduction through deep pixel well implant for image sensors
CN109817736A (zh) * 2019-01-23 2019-05-28 杭州电子科技大学 一种串扰抑制和辐射加固的像素探测器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5755672A (en) * 1980-09-19 1982-04-02 Nec Corp Solid-state image pickup device and its driving method
JPH0828496B2 (ja) * 1987-03-31 1996-03-21 株式会社東芝 固体撮像装置

Also Published As

Publication number Publication date
GB9101669D0 (en) 1991-03-06
NL9100082A (nl) 1991-08-16
DE4102591A1 (de) 1991-08-01
KR930000914B1 (ko) 1993-02-11
GB2240429A (en) 1991-07-31
JPH04212460A (ja) 1992-08-04

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