KR920001740A - Ccd 영상센서의 차광막 구조 - Google Patents
Ccd 영상센서의 차광막 구조 Download PDFInfo
- Publication number
- KR920001740A KR920001740A KR1019900008529A KR900008529A KR920001740A KR 920001740 A KR920001740 A KR 920001740A KR 1019900008529 A KR1019900008529 A KR 1019900008529A KR 900008529 A KR900008529 A KR 900008529A KR 920001740 A KR920001740 A KR 920001740A
- Authority
- KR
- South Korea
- Prior art keywords
- light shielding
- shielding film
- image sensor
- ccd image
- film structure
- Prior art date
Links
- 150000004767 nitrides Chemical class 0.000 claims 2
- 229910008484 TiSi Inorganic materials 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1제도는 본 발명의 제조과정을 나타낸 단면도
Claims (4)
- 가관위에 P-웰을 형성하고 이 P-웰에 채널스톱부와 포토 다이오드 그리고 트랜스퍼게이트와 VCCD를 형성한 후 폴리게이트와 질화막을 형성한 것에 있어서, 상기 포토 다이오드위의 질화막을 완전히 제거하고 차광막을 형성함을 특징으로 하는 CCD영상센서의 차광막 구조.
- 제1항에 있어서, 차광막을 접지 전극으로 이용하여 포토다이오드 상층부와 P+층에 접지전위를 인가하게 함을 특징으로 하는 CCD영상센서의 차광막 구조.
- 제1항에 있어서, 차광막으로 TaSi2, TiSi2의 실리사이드를 사용함을 특징으로 하는CCD영상센서의 차광막 구조.
- 제1항에 있어서, VCCD아래에 P+매몰층이 형성되게 함을 특징으로 한는 CCD영상센서의 차광막 구조.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900008529A KR930006278B1 (ko) | 1990-06-11 | 1990-06-11 | Ccd 영상센서의 차광막 구조 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900008529A KR930006278B1 (ko) | 1990-06-11 | 1990-06-11 | Ccd 영상센서의 차광막 구조 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR920001740A true KR920001740A (ko) | 1992-01-30 |
| KR930006278B1 KR930006278B1 (ko) | 1993-07-09 |
Family
ID=19299961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019900008529A KR930006278B1 (ko) | 1990-06-11 | 1990-06-11 | Ccd 영상센서의 차광막 구조 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR930006278B1 (ko) |
-
1990
- 1990-06-11 KR KR1019900008529A patent/KR930006278B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR930006278B1 (ko) | 1993-07-09 |
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| A201 | Request for examination | ||
| AMND | Amendment | ||
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| AMND | Amendment | ||
| E601 | Decision to refuse application | ||
| J2X1 | Appeal (before the patent court) |
Free format text: APPEAL AGAINST DECISION TO DECLINE REFUSAL |
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| G160 | Decision to publish patent application | ||
| B701 | Decision to grant | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20090818 Year of fee payment: 17 |
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| EXPY | Expiration of term |