KR920003451A - 자기정렬 방식에 의한 전하 촬상소자의 제조방법 - Google Patents
자기정렬 방식에 의한 전하 촬상소자의 제조방법 Download PDFInfo
- Publication number
- KR920003451A KR920003451A KR1019900010423A KR900010423A KR920003451A KR 920003451 A KR920003451 A KR 920003451A KR 1019900010423 A KR1019900010423 A KR 1019900010423A KR 900010423 A KR900010423 A KR 900010423A KR 920003451 A KR920003451 A KR 920003451A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- imaging device
- self alignment
- charge imaging
- metal
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000003384 imaging method Methods 0.000 title claims 2
- 238000000034 method Methods 0.000 title claims 2
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000003870 refractory metal Substances 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66946—Charge transfer devices
- H01L29/66954—Charge transfer devices with an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종래의 제조공정을 나타낸 단면도.
제2도는 종래의 스미어 현상을 설명하기 위한 단면도.
제3도는 본 발명의 제조공정을 나타낸 단면도.
* 도면의 주요부분에 대한 부호의 설명
1 : 기판 2 : 수광부
3 : 전송부 4 : 게이트 산화막
5 : 폴리게이트 6 : 메탈
7 : 실리사이드
Claims (3)
- 기판내에 수광부와 전송부를 형성하고 기판위에는 폴리게이트를 형성한 후 메탈을 증착하여 어닐링 공정에 의해 실리사이드를 형성하고 이어 수광부 상방에 남아있는 메탈을 식각함을 특징으로 하는 자기정렬방식에 의한 전하 촬상소자의 제조방법.
- 제1항에 있어서, 메탈은 내화메탈을 이용하여 PVD법으로 증착함을 특징으로 하는 자기정렬 방식에 의한 전하 촬상소자의 제조방법.
- 재1항에 있어서, 실리사이드가 자기정렬 방식으로 폴리게이트의 측면까지 덮도록 형성함을 특징으로 하는 자기정렬 방식에 의한 전하 촬상 소자의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900010423A KR920010433B1 (ko) | 1990-07-10 | 1990-07-10 | 자기정렬 방식에 의한 전하 촬상소자의 제조방법 |
GB9114254A GB2246017B (en) | 1990-07-10 | 1991-07-02 | Method for producing a self-alignment type CCD sensor |
FR9108537A FR2665983A1 (fr) | 1990-07-10 | 1991-07-08 | Procede pour produire un detecteur d'image ccd du type a autoalignement. |
DE4122595A DE4122595C2 (de) | 1990-07-10 | 1991-07-08 | Verfahren zum Herstellen eines selbstausgerichteten CCD-Bildsensors |
JP3193640A JPH0775259B2 (ja) | 1990-07-10 | 1991-07-09 | 自己整列方式のccd映像センサーの製造方法 |
SU5001048/25A RU2038652C1 (ru) | 1990-07-10 | 1991-07-09 | Способ изготовления формирователя изображения на пзс саморегулирующегося типа |
NL9101212A NL9101212A (nl) | 1990-07-10 | 1991-07-10 | Werkwijze voor het vervaardigen van een zelf-uitlijnend type ccd-sensor. |
US07/728,199 US5202282A (en) | 1990-07-10 | 1991-07-10 | Method for producing a self-alignment type CCD sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900010423A KR920010433B1 (ko) | 1990-07-10 | 1990-07-10 | 자기정렬 방식에 의한 전하 촬상소자의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920003451A true KR920003451A (ko) | 1992-02-29 |
KR920010433B1 KR920010433B1 (ko) | 1992-11-27 |
Family
ID=19301091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900010423A KR920010433B1 (ko) | 1990-07-10 | 1990-07-10 | 자기정렬 방식에 의한 전하 촬상소자의 제조방법 |
Country Status (8)
Country | Link |
---|---|
US (1) | US5202282A (ko) |
JP (1) | JPH0775259B2 (ko) |
KR (1) | KR920010433B1 (ko) |
DE (1) | DE4122595C2 (ko) |
FR (1) | FR2665983A1 (ko) |
GB (1) | GB2246017B (ko) |
NL (1) | NL9101212A (ko) |
RU (1) | RU2038652C1 (ko) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2853785B2 (ja) * | 1992-01-30 | 1999-02-03 | 松下電子工業株式会社 | 固体撮像装置及びその製造方法 |
JPH07115184A (ja) * | 1993-08-24 | 1995-05-02 | Canon Inc | 積層型固体撮像装置及びその製造方法 |
KR0148734B1 (ko) * | 1995-06-22 | 1998-08-01 | 문정환 | 시시디 촬상소자 제조방법 |
JP3149855B2 (ja) * | 1998-08-27 | 2001-03-26 | 日本電気株式会社 | 固体撮像装置およびその製造方法 |
KR100469109B1 (ko) * | 1998-11-26 | 2005-02-02 | 세이코 엡슨 가부시키가이샤 | 전기 광학 장치 및 그 제조방법 및 전자기기 |
US6607951B2 (en) * | 2001-06-26 | 2003-08-19 | United Microelectronics Corp. | Method for fabricating a CMOS image sensor |
KR100523839B1 (ko) * | 2002-10-07 | 2005-10-27 | 한국전자통신연구원 | 건식 리소그라피 방법 및 이를 이용한 게이트 패턴 형성방법 |
JP2004200321A (ja) * | 2002-12-17 | 2004-07-15 | Fuji Film Microdevices Co Ltd | 固体撮像素子およびその製造方法 |
KR100745595B1 (ko) * | 2004-11-29 | 2007-08-02 | 삼성전자주식회사 | 이미지 센서의 마이크로 렌즈 및 그 형성 방법 |
RU2594615C2 (ru) * | 2014-10-13 | 2016-08-20 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) | Способ изготовления полупроводникового прибора |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8303467A (nl) * | 1983-10-10 | 1985-05-01 | Philips Nv | Werkwijze voor het vervaardigen van een patroon van geleidend materiaal. |
US4548671A (en) * | 1984-07-23 | 1985-10-22 | Rca Corporation | Method of making a charge-coupled device imager which includes an array of Schottky-barrier detectors |
JPS6149465A (ja) * | 1984-08-17 | 1986-03-11 | Matsushita Electronics Corp | 固体撮像装置 |
FR2571177B1 (fr) * | 1984-10-02 | 1987-02-27 | Thomson Csf | Procede de realisation de grilles en siliciure ou en silicium pour circuit integre comportant des elements du type grille - isolant - semi-conducteur |
NL8501339A (nl) * | 1985-05-10 | 1986-12-01 | Philips Nv | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
US4746622A (en) * | 1986-10-07 | 1988-05-24 | Eastman Kodak Company | Process for preparing a charge coupled device with charge transfer direction biasing implants |
EP0309542A1 (en) * | 1987-03-30 | 1989-04-05 | EASTMAN KODAK COMPANY (a New Jersey corporation) | Charge-coupled device with dual layer electrodes |
US4804438A (en) * | 1988-02-08 | 1989-02-14 | Eastman Kodak Company | Method of providing a pattern of conductive platinum silicide |
FR2640808B1 (fr) * | 1988-12-20 | 1991-02-08 | Thomson Composants Militaires | Procede de fabrication d'electrodes de faible dimension, dans un circuit integre |
-
1990
- 1990-07-10 KR KR1019900010423A patent/KR920010433B1/ko not_active IP Right Cessation
-
1991
- 1991-07-02 GB GB9114254A patent/GB2246017B/en not_active Expired - Lifetime
- 1991-07-08 DE DE4122595A patent/DE4122595C2/de not_active Expired - Lifetime
- 1991-07-08 FR FR9108537A patent/FR2665983A1/fr active Pending
- 1991-07-09 JP JP3193640A patent/JPH0775259B2/ja not_active Expired - Lifetime
- 1991-07-09 RU SU5001048/25A patent/RU2038652C1/ru active
- 1991-07-10 NL NL9101212A patent/NL9101212A/nl active Search and Examination
- 1991-07-10 US US07/728,199 patent/US5202282A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB2246017A (en) | 1992-01-15 |
JPH0689993A (ja) | 1994-03-29 |
RU2038652C1 (ru) | 1995-06-27 |
FR2665983A1 (fr) | 1992-02-21 |
DE4122595C2 (de) | 1997-08-14 |
GB2246017B (en) | 1994-10-12 |
JPH0775259B2 (ja) | 1995-08-09 |
GB9114254D0 (en) | 1991-08-21 |
US5202282A (en) | 1993-04-13 |
DE4122595A1 (de) | 1992-01-16 |
NL9101212A (nl) | 1992-02-03 |
KR920010433B1 (ko) | 1992-11-27 |
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