KR920003451A - 자기정렬 방식에 의한 전하 촬상소자의 제조방법 - Google Patents

자기정렬 방식에 의한 전하 촬상소자의 제조방법 Download PDF

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Publication number
KR920003451A
KR920003451A KR1019900010423A KR900010423A KR920003451A KR 920003451 A KR920003451 A KR 920003451A KR 1019900010423 A KR1019900010423 A KR 1019900010423A KR 900010423 A KR900010423 A KR 900010423A KR 920003451 A KR920003451 A KR 920003451A
Authority
KR
South Korea
Prior art keywords
manufacturing
imaging device
self alignment
charge imaging
metal
Prior art date
Application number
KR1019900010423A
Other languages
English (en)
Other versions
KR920010433B1 (ko
Inventor
손동균
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019900010423A priority Critical patent/KR920010433B1/ko
Priority to GB9114254A priority patent/GB2246017B/en
Priority to FR9108537A priority patent/FR2665983A1/fr
Priority to DE4122595A priority patent/DE4122595C2/de
Priority to JP3193640A priority patent/JPH0775259B2/ja
Priority to SU5001048/25A priority patent/RU2038652C1/ru
Priority to NL9101212A priority patent/NL9101212A/nl
Priority to US07/728,199 priority patent/US5202282A/en
Publication of KR920003451A publication Critical patent/KR920003451A/ko
Application granted granted Critical
Publication of KR920010433B1 publication Critical patent/KR920010433B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66946—Charge transfer devices
    • H01L29/66954—Charge transfer devices with an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

내용 없음.

Description

자기정렬 방식에 의한 전하 촬상소자의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종래의 제조공정을 나타낸 단면도.
제2도는 종래의 스미어 현상을 설명하기 위한 단면도.
제3도는 본 발명의 제조공정을 나타낸 단면도.
* 도면의 주요부분에 대한 부호의 설명
1 : 기판 2 : 수광부
3 : 전송부 4 : 게이트 산화막
5 : 폴리게이트 6 : 메탈
7 : 실리사이드

Claims (3)

  1. 기판내에 수광부와 전송부를 형성하고 기판위에는 폴리게이트를 형성한 후 메탈을 증착하여 어닐링 공정에 의해 실리사이드를 형성하고 이어 수광부 상방에 남아있는 메탈을 식각함을 특징으로 하는 자기정렬방식에 의한 전하 촬상소자의 제조방법.
  2. 제1항에 있어서, 메탈은 내화메탈을 이용하여 PVD법으로 증착함을 특징으로 하는 자기정렬 방식에 의한 전하 촬상소자의 제조방법.
  3. 재1항에 있어서, 실리사이드가 자기정렬 방식으로 폴리게이트의 측면까지 덮도록 형성함을 특징으로 하는 자기정렬 방식에 의한 전하 촬상 소자의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900010423A 1990-07-10 1990-07-10 자기정렬 방식에 의한 전하 촬상소자의 제조방법 KR920010433B1 (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1019900010423A KR920010433B1 (ko) 1990-07-10 1990-07-10 자기정렬 방식에 의한 전하 촬상소자의 제조방법
GB9114254A GB2246017B (en) 1990-07-10 1991-07-02 Method for producing a self-alignment type CCD sensor
FR9108537A FR2665983A1 (fr) 1990-07-10 1991-07-08 Procede pour produire un detecteur d'image ccd du type a autoalignement.
DE4122595A DE4122595C2 (de) 1990-07-10 1991-07-08 Verfahren zum Herstellen eines selbstausgerichteten CCD-Bildsensors
JP3193640A JPH0775259B2 (ja) 1990-07-10 1991-07-09 自己整列方式のｃｃｄ映像センサーの製造方法
SU5001048/25A RU2038652C1 (ru) 1990-07-10 1991-07-09 Способ изготовления формирователя изображения на пзс саморегулирующегося типа
NL9101212A NL9101212A (nl) 1990-07-10 1991-07-10 Werkwijze voor het vervaardigen van een zelf-uitlijnend type ccd-sensor.
US07/728,199 US5202282A (en) 1990-07-10 1991-07-10 Method for producing a self-alignment type CCD sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900010423A KR920010433B1 (ko) 1990-07-10 1990-07-10 자기정렬 방식에 의한 전하 촬상소자의 제조방법

Publications (2)

Publication Number Publication Date
KR920003451A true KR920003451A (ko) 1992-02-29
KR920010433B1 KR920010433B1 (ko) 1992-11-27

Family

ID=19301091

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900010423A KR920010433B1 (ko) 1990-07-10 1990-07-10 자기정렬 방식에 의한 전하 촬상소자의 제조방법

Country Status (8)

Country Link
US (1) US5202282A (ko)
JP (1) JPH0775259B2 (ko)
KR (1) KR920010433B1 (ko)
DE (1) DE4122595C2 (ko)
FR (1) FR2665983A1 (ko)
GB (1) GB2246017B (ko)
NL (1) NL9101212A (ko)
RU (1) RU2038652C1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2853785B2 (ja) * 1992-01-30 1999-02-03 松下電子工業株式会社 固体撮像装置及びその製造方法
JPH07115184A (ja) * 1993-08-24 1995-05-02 Canon Inc 積層型固体撮像装置及びその製造方法
KR0148734B1 (ko) * 1995-06-22 1998-08-01 문정환 시시디 촬상소자 제조방법
JP3149855B2 (ja) * 1998-08-27 2001-03-26 日本電気株式会社 固体撮像装置およびその製造方法
KR100469109B1 (ko) * 1998-11-26 2005-02-02 세이코 엡슨 가부시키가이샤 전기 광학 장치 및 그 제조방법 및 전자기기
US6607951B2 (en) * 2001-06-26 2003-08-19 United Microelectronics Corp. Method for fabricating a CMOS image sensor
KR100523839B1 (ko) * 2002-10-07 2005-10-27 한국전자통신연구원 건식 리소그라피 방법 및 이를 이용한 게이트 패턴 형성방법
JP2004200321A (ja) * 2002-12-17 2004-07-15 Fuji Film Microdevices Co Ltd 固体撮像素子およびその製造方法
KR100745595B1 (ko) * 2004-11-29 2007-08-02 삼성전자주식회사 이미지 센서의 마이크로 렌즈 및 그 형성 방법
RU2594615C2 (ru) * 2014-10-13 2016-08-20 Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления полупроводникового прибора

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8303467A (nl) * 1983-10-10 1985-05-01 Philips Nv Werkwijze voor het vervaardigen van een patroon van geleidend materiaal.
US4548671A (en) * 1984-07-23 1985-10-22 Rca Corporation Method of making a charge-coupled device imager which includes an array of Schottky-barrier detectors
JPS6149465A (ja) * 1984-08-17 1986-03-11 Matsushita Electronics Corp 固体撮像装置
FR2571177B1 (fr) * 1984-10-02 1987-02-27 Thomson Csf Procede de realisation de grilles en siliciure ou en silicium pour circuit integre comportant des elements du type grille - isolant - semi-conducteur
NL8501339A (nl) * 1985-05-10 1986-12-01 Philips Nv Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
US4746622A (en) * 1986-10-07 1988-05-24 Eastman Kodak Company Process for preparing a charge coupled device with charge transfer direction biasing implants
EP0309542A1 (en) * 1987-03-30 1989-04-05 EASTMAN KODAK COMPANY (a New Jersey corporation) Charge-coupled device with dual layer electrodes
US4804438A (en) * 1988-02-08 1989-02-14 Eastman Kodak Company Method of providing a pattern of conductive platinum silicide
FR2640808B1 (fr) * 1988-12-20 1991-02-08 Thomson Composants Militaires Procede de fabrication d'electrodes de faible dimension, dans un circuit integre

Also Published As

Publication number Publication date
GB2246017A (en) 1992-01-15
JPH0689993A (ja) 1994-03-29
RU2038652C1 (ru) 1995-06-27
FR2665983A1 (fr) 1992-02-21
DE4122595C2 (de) 1997-08-14
GB2246017B (en) 1994-10-12
JPH0775259B2 (ja) 1995-08-09
GB9114254D0 (en) 1991-08-21
US5202282A (en) 1993-04-13
DE4122595A1 (de) 1992-01-16
NL9101212A (nl) 1992-02-03
KR920010433B1 (ko) 1992-11-27

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