KR970030868A - 고체촬상소자 및 그 제조방법 - Google Patents

고체촬상소자 및 그 제조방법 Download PDF

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Publication number
KR970030868A
KR970030868A KR1019950044907A KR19950044907A KR970030868A KR 970030868 A KR970030868 A KR 970030868A KR 1019950044907 A KR1019950044907 A KR 1019950044907A KR 19950044907 A KR19950044907 A KR 19950044907A KR 970030868 A KR970030868 A KR 970030868A
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KR
South Korea
Prior art keywords
photodiode
solid state
transfer
image pickup
pickup device
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Application number
KR1019950044907A
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English (en)
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KR0183761B1 (ko
Inventor
박상식
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김광호
삼성전자 주식회사
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950044907A priority Critical patent/KR0183761B1/ko
Priority to US08/758,045 priority patent/US5714753A/en
Priority to JP8316407A priority patent/JPH09181976A/ja
Publication of KR970030868A publication Critical patent/KR970030868A/ko
Application granted granted Critical
Publication of KR0183761B1 publication Critical patent/KR0183761B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

고체촬상소자 및 그 제조방법에 대해 기재되어 있다. 이는, 제1광다이오드와 제1광다이오드 보다 전위 우물이 깊고 광감도가 낮은 제2광다이오드로 구성되는 수광부 및 제1광다이오드에 축적되는 전하를 전송소자로 전달하는 제1전달게이트와 제2광다이오드에 축척되는 전하를 전송소자로 전달하는 제2전달게이트로 구성되는 전달부를 포함하는 것을 특징으로 한다. 따라서, 넓은 다이나믹 범위를 가질 수 있다.

Description

고체촬상소자 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 의한 고체촬상소자의 수광부 및 전달부를 개략적으로 도시한 평면도이다.

Claims (4)

  1. 제1광다이오드와 상기 제1광다이오드 보다 전위 우물이 깊고 광감도가 낮은 제2광다이오드로 구성되는 수광부; 및 상기 제1광다이오드에 축적되는 전하를 전송소자로 전달하는 제1전달게이트와 상기 제2광다이오드에 축적되는 전하를 전송소자로 전달하는 제2전달게이트로 구성되는 전달부를 포함하는 것을 특징으로 하는 고체촬상소자.
  2. 제1항에 있어서, 상기 제2광다이오드에 도핑되어 있는 불순물이온의 농도는 상기 제1광다이오드에 도핑되어 있는 불순물이온의 농도보다 높은 것을 특징으로 하는 고체촬상소자.
  3. 제1항에 있어서, 상기 제2광다이오드는 상기 제1광다이오드 보다 작은 것을 특징으로 하는 고체촬상소자.
  4. 제1항에 있어서, 그 촛점이 상기 제1광다이오드에 맞춰지도록 형성된 마이크로 렌즈를 더 포함하는 것을 특징으로 하는 고체촬상소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950044907A 1995-11-29 1995-11-29 고체촬상소자 및 그 제조방법 KR0183761B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019950044907A KR0183761B1 (ko) 1995-11-29 1995-11-29 고체촬상소자 및 그 제조방법
US08/758,045 US5714753A (en) 1995-11-29 1996-11-27 Solid state imaging device
JP8316407A JPH09181976A (ja) 1995-11-29 1996-11-27 固体撮像素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950044907A KR0183761B1 (ko) 1995-11-29 1995-11-29 고체촬상소자 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR970030868A true KR970030868A (ko) 1997-06-26
KR0183761B1 KR0183761B1 (ko) 1999-03-20

Family

ID=19436549

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950044907A KR0183761B1 (ko) 1995-11-29 1995-11-29 고체촬상소자 및 그 제조방법

Country Status (3)

Country Link
US (1) US5714753A (ko)
JP (1) JPH09181976A (ko)
KR (1) KR0183761B1 (ko)

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JP3440722B2 (ja) * 1996-09-20 2003-08-25 ソニー株式会社 固体撮像装置およびその駆動方法並びにカメラ
US7199410B2 (en) * 1999-12-14 2007-04-03 Cypress Semiconductor Corporation (Belgium) Bvba Pixel structure with improved charge transfer
US6815791B1 (en) * 1997-02-10 2004-11-09 Fillfactory Buried, fully depletable, high fill factor photodiodes
US6972794B1 (en) * 1999-06-15 2005-12-06 Micron Technology, Inc. Dual sensitivity image sensor
US6809768B1 (en) * 2000-02-14 2004-10-26 Foveon, Inc. Double slope pixel sensor and array
US7623168B2 (en) * 2000-07-13 2009-11-24 Eastman Kodak Company Method and apparatus to extend the effective dynamic range of an image sensing device
US6909461B1 (en) * 2000-07-13 2005-06-21 Eastman Kodak Company Method and apparatus to extend the effective dynamic range of an image sensing device
JP4050906B2 (ja) * 2002-01-25 2008-02-20 富士フイルム株式会社 固体撮像装置
US6777661B2 (en) * 2002-03-15 2004-08-17 Eastman Kodak Company Interlined charge-coupled device having an extended dynamic range
JP2004048561A (ja) * 2002-07-15 2004-02-12 Fuji Photo Film Co Ltd 撮像装置及び測光装置
US7489352B2 (en) * 2002-11-15 2009-02-10 Micron Technology, Inc. Wide dynamic range pinned photodiode active pixel sensor (APS)
JP4264251B2 (ja) * 2002-12-09 2009-05-13 富士フイルム株式会社 固体撮像装置とその動作方法
JP4051701B2 (ja) * 2003-01-17 2008-02-27 富士フイルム株式会社 固体撮像素子の欠陥画素補正方法及び撮影装置
US7430011B2 (en) * 2003-01-22 2008-09-30 Omnivision Technologies, Inc. Image sensor having dual automatic exposure control
JP4307862B2 (ja) * 2003-02-05 2009-08-05 富士フイルム株式会社 信号処理方法、信号処理回路、及び撮像装置
US7750958B1 (en) 2005-03-28 2010-07-06 Cypress Semiconductor Corporation Pixel structure
US7808022B1 (en) 2005-03-28 2010-10-05 Cypress Semiconductor Corporation Cross talk reduction
DE102005049228B4 (de) * 2005-10-14 2014-03-27 Siemens Aktiengesellschaft Detektor mit einem Array von Photodioden
JP4649623B2 (ja) * 2006-01-18 2011-03-16 国立大学法人静岡大学 固体撮像装置及びその画素信号の読みだし方法
US20070285547A1 (en) * 2006-05-30 2007-12-13 Milligan Edward S CMOS image sensor array optimization for both bright and low light conditions
US7825966B2 (en) * 2007-06-29 2010-11-02 Omnivision Technologies, Inc. High dynamic range sensor with blooming drain
JP4954905B2 (ja) * 2008-01-15 2012-06-20 富士フイルム株式会社 固体撮像装置とその動作方法
US8476567B2 (en) 2008-09-22 2013-07-02 Semiconductor Components Industries, Llc Active pixel with precharging circuit
GB201011640D0 (en) * 2010-07-12 2010-08-25 Univ Sheffield Radiation detection and method
GB201102478D0 (en) 2011-02-11 2011-03-30 Isdi Ltd Radiation detector and method
GB2525625B (en) 2014-04-29 2017-05-31 Isdi Ltd Device and method

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US5648654A (en) * 1995-12-21 1997-07-15 General Electric Company Flat panel imaging device with patterned common electrode

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Publication number Publication date
US5714753A (en) 1998-02-03
KR0183761B1 (ko) 1999-03-20
JPH09181976A (ja) 1997-07-11

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