FR2367353A1 - Dispositif de formation d'image a semi-conducteur - Google Patents

Dispositif de formation d'image a semi-conducteur

Info

Publication number
FR2367353A1
FR2367353A1 FR7730050A FR7730050A FR2367353A1 FR 2367353 A1 FR2367353 A1 FR 2367353A1 FR 7730050 A FR7730050 A FR 7730050A FR 7730050 A FR7730050 A FR 7730050A FR 2367353 A1 FR2367353 A1 FR 2367353A1
Authority
FR
France
Prior art keywords
training device
semiconductor image
image training
junction diode
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7730050A
Other languages
English (en)
Other versions
FR2367353B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2367353A1 publication Critical patent/FR2367353A1/fr
Application granted granted Critical
Publication of FR2367353B1 publication Critical patent/FR2367353B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

L'invention concerne un dispositif photo-électrique semi-conducteur. Il comporte des photodiodes, des transistors de commutation MOS et un dispositif de sortie de signaux, le tout dans un même substrat semi-conducteur. Chaque photodiode consiste en une diode à jonction PN et une diode MIS, des dispositions étant prises pour que la lumière incidente ne rencontre que la diode à jonction PN. L'invention s'applique à la réalisation de détecteurs de lumière.
FR7730050A 1976-10-06 1977-10-06 Dispositif de formation d'image a semi-conducteur Granted FR2367353A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11934776A JPS5345119A (en) 1976-10-06 1976-10-06 Solid state pickup element

Publications (2)

Publication Number Publication Date
FR2367353A1 true FR2367353A1 (fr) 1978-05-05
FR2367353B1 FR2367353B1 (fr) 1982-02-26

Family

ID=14759228

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7730050A Granted FR2367353A1 (fr) 1976-10-06 1977-10-06 Dispositif de formation d'image a semi-conducteur

Country Status (6)

Country Link
US (1) US4155094A (fr)
JP (1) JPS5345119A (fr)
DE (1) DE2745046C3 (fr)
FR (1) FR2367353A1 (fr)
GB (1) GB1531180A (fr)
NL (1) NL179775C (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2376517A1 (fr) * 1976-12-30 1978-07-28 Ibm Structure photosensible a l'etat solide presentant une linearite de charge amelioree
EP0026380A2 (fr) * 1979-09-28 1981-04-08 Siemens Aktiengesellschaft Procédé de balayage d'une image en mouvement continuel par balayage d'images partielles par lignes alternées
EP0038725A1 (fr) * 1980-04-23 1981-10-28 Thomson-Csf Dispositif photosensible lu par transfert de charges, et caméra de télévision comportant un tel dispositif
FR2501943A1 (fr) * 1981-03-13 1982-09-17 Thomson Csf Dispositif photosensible solide a deux dimensions et dispositif d'analyse d'image, utilisant le transfert de charges electriques, comportant un tel dispositif
FR2503502A1 (fr) * 1981-03-31 1982-10-08 Thomson Csf Dispositif d'analyse d'images en couleur utilisant le transfert de charges electriques et camera de television comportant un tel dispositif
EP0132870A1 (fr) * 1983-07-06 1985-02-13 Agfa-Gevaert N.V. Dispositif semi-conducteur sensible à la radiation
EP0562523A1 (fr) * 1992-03-24 1993-09-29 Seiko Instruments Inc. Détecteur de radiation à semi-conducteur comprenant un condensateur de lecture
EP0714134A1 (fr) * 1994-11-22 1996-05-29 AT&T Corp. Pixel actif CMOS à couche de silicium polycristallin unique

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53125791A (en) * 1977-04-08 1978-11-02 Toshiba Corp Solidstate pick up unit
JPS6017196B2 (ja) * 1978-01-23 1985-05-01 株式会社日立製作所 固体撮像素子
US4236829A (en) * 1978-01-31 1980-12-02 Matsushita Electric Industrial Co., Ltd. Solid-state image sensor
JPS54114922A (en) * 1978-02-27 1979-09-07 Nec Corp Two dimentional pick up element and its drive
JPS54154382A (en) * 1978-05-25 1979-12-05 Canon Inc Photo sensor device
FR2433868A1 (fr) * 1978-08-17 1980-03-14 Hitachi Ltd Dispositif de formation d'image a semi-conducteur
DE2943143A1 (de) * 1979-10-25 1981-05-07 Siemens AG, 1000 Berlin und 8000 München Infrarotempfindler x-y-ccd-sensor und verfahren zu seiner herstellung
US4322638A (en) * 1980-01-16 1982-03-30 Eastman Kodak Company Image sensor adaptable for fast frame readout
US4484210A (en) * 1980-09-05 1984-11-20 Nippon Electric Co., Ltd. Solid-state imaging device having a reduced image lag
DE3138294A1 (de) * 1981-09-25 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler halbleiter-bildsensor mit steuerung oder regelung der integrationszeit
US4481522A (en) * 1982-03-24 1984-11-06 Rca Corporation CCD Imagers with substrates having drift field
US4807007A (en) * 1983-10-03 1989-02-21 Texas Instruments Incorporated Mis infrared detector having a storage area
US4665325A (en) * 1984-01-30 1987-05-12 Matsushita Electric Industrial Co., Ltd. Solid state image sensor with signal amplification
US4606115A (en) * 1985-05-14 1986-08-19 Motorola, Inc. Method of manufacturing optically sensitive semiconductor devices including anti-reflective coatings
US4720746A (en) * 1985-08-05 1988-01-19 Eastman Kodak Company Frame transfer CCD area image sensor with improved horizontal resolution
DE3706278A1 (de) * 1986-02-28 1987-09-03 Canon Kk Halbleitervorrichtung und herstellungsverfahren hierfuer
JPS6431062A (en) * 1987-07-27 1989-02-01 Ngk Insulators Ltd Inferior insulator detector
JPS6475977A (en) * 1987-09-18 1989-03-22 Ngk Insulators Ltd Faulty insulator detector
US5051797A (en) * 1989-09-05 1991-09-24 Eastman Kodak Company Charge-coupled device (CCD) imager and method of operation
US6021172A (en) 1994-01-28 2000-02-01 California Institute Of Technology Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter
USRE42918E1 (en) 1994-01-28 2011-11-15 California Institute Of Technology Single substrate camera device with CMOS image sensor
US6456326B2 (en) 1994-01-28 2002-09-24 California Institute Of Technology Single chip camera device having double sampling operation
US6486503B1 (en) 1994-01-28 2002-11-26 California Institute Of Technology Active pixel sensor array with electronic shuttering
US5471515A (en) 1994-01-28 1995-11-28 California Institute Of Technology Active pixel sensor with intra-pixel charge transfer
US5563429A (en) * 1994-06-14 1996-10-08 Nikon Corp. Solid state imaging device
EP0940029B1 (fr) * 1996-01-22 2004-06-23 California Institute Of Technology Matrice de detecteurs actifs de pixels fournissant plusieurs resolutions de resultats
US5942775A (en) * 1997-04-30 1999-08-24 Lucent Technologies Inc. Photosensing device with improved spectral response and low thermal leakage
US6353240B2 (en) * 1999-06-02 2002-03-05 United Microelectronics Corp. CMOS sensor with shallow and deep regions
US6376868B1 (en) * 1999-06-15 2002-04-23 Micron Technology, Inc. Multi-layered gate for a CMOS imager
CA2350416A1 (fr) * 2000-12-20 2002-06-20 Symagery Microsystems Inc. Capteur d'image utilisant la technologie des condensateurs commutes et permettant le double echantillonnage avec correlation
CA2351025A1 (fr) * 2001-06-19 2002-12-19 Symagery Microsystems Inc. Methode et appareil de controle de la consommation de puissance dans un reseau detecteur de pixels actifs

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3883437A (en) * 1974-01-25 1975-05-13 Hughes Aircraft Co Monolithic IR detector arrays with direct injection charge coupled device readout
NL180157C (nl) * 1975-06-09 1987-01-02 Philips Nv Halfgeleider beeldopneeminrichting.

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2376517A1 (fr) * 1976-12-30 1978-07-28 Ibm Structure photosensible a l'etat solide presentant une linearite de charge amelioree
EP0026380A3 (en) * 1979-09-28 1982-12-29 Siemens Aktiengesellschaft Monolithic integrated circuit for picture line scanning
EP0026380A2 (fr) * 1979-09-28 1981-04-08 Siemens Aktiengesellschaft Procédé de balayage d'une image en mouvement continuel par balayage d'images partielles par lignes alternées
EP0038725A1 (fr) * 1980-04-23 1981-10-28 Thomson-Csf Dispositif photosensible lu par transfert de charges, et caméra de télévision comportant un tel dispositif
FR2481553A1 (fr) * 1980-04-23 1981-10-30 Thomson Csf Dispositif photosensible lu par transfert de charges et camera de television comportant un tel dispositif
US4477835A (en) * 1981-03-13 1984-10-16 Thomson-Csf Charge transfer photosensitive device
EP0060752A1 (fr) * 1981-03-13 1982-09-22 Thomson-Csf Dispositif photosensible solide à deux dimensions, et dispositif d'analyse d'image, utilisant le transfert de charges électriques, comportant un tel dispositif
FR2501943A1 (fr) * 1981-03-13 1982-09-17 Thomson Csf Dispositif photosensible solide a deux dimensions et dispositif d'analyse d'image, utilisant le transfert de charges electriques, comportant un tel dispositif
FR2503502A1 (fr) * 1981-03-31 1982-10-08 Thomson Csf Dispositif d'analyse d'images en couleur utilisant le transfert de charges electriques et camera de television comportant un tel dispositif
EP0063061A1 (fr) * 1981-03-31 1982-10-20 Thomson-Csf Dispositif d'analyse d'images en couleur utilisant le transfert de charges électriques, et caméra de télévision comportant un tel dispositif
US4453177A (en) * 1981-03-31 1984-06-05 Thomson-Csf Color television camera
EP0132870A1 (fr) * 1983-07-06 1985-02-13 Agfa-Gevaert N.V. Dispositif semi-conducteur sensible à la radiation
EP0562523A1 (fr) * 1992-03-24 1993-09-29 Seiko Instruments Inc. Détecteur de radiation à semi-conducteur comprenant un condensateur de lecture
US5589705A (en) * 1992-03-24 1996-12-31 Seiko Instruments Inc. Real-time semiconductor radiation detector
EP0788167A2 (fr) * 1992-03-24 1997-08-06 Seiko Instruments Inc. Détecteur semi-conducteur de radiations radiales comprenant un condensateur de lecture
EP0790650A2 (fr) * 1992-03-24 1997-08-20 Seiko Instruments Inc. Détecteur de radiations à semi-conducteur comprenant un condensateur de lecture
EP0790650A3 (fr) * 1992-03-24 1998-03-11 Seiko Instruments Inc. Détecteur de radiations à semi-conducteur comprenant un condensateur de lecture
EP0788167A3 (fr) * 1992-03-24 1998-03-11 Seiko Instruments Inc. Détecteur semi-conducteur de radiations radiales comprenant un condensateur de lecture
US5757040A (en) * 1992-03-24 1998-05-26 Seiko Instruments Inc. Real-time semiconductor radiation detector
EP0714134A1 (fr) * 1994-11-22 1996-05-29 AT&T Corp. Pixel actif CMOS à couche de silicium polycristallin unique

Also Published As

Publication number Publication date
FR2367353B1 (fr) 1982-02-26
US4155094A (en) 1979-05-15
JPS5345119A (en) 1978-04-22
NL179775C (nl) 1986-11-03
JPS5714063B2 (fr) 1982-03-20
GB1531180A (en) 1978-11-01
NL179775B (nl) 1986-06-02
DE2745046C3 (de) 1981-01-29
DE2745046A1 (de) 1978-04-20
DE2745046B2 (de) 1980-05-29
NL7711000A (nl) 1978-04-10

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