SE8106453L - Fotodiodstruktur med skreddarsydd spektral kenslighet - Google Patents

Fotodiodstruktur med skreddarsydd spektral kenslighet

Info

Publication number
SE8106453L
SE8106453L SE8106453A SE8106453A SE8106453L SE 8106453 L SE8106453 L SE 8106453L SE 8106453 A SE8106453 A SE 8106453A SE 8106453 A SE8106453 A SE 8106453A SE 8106453 L SE8106453 L SE 8106453L
Authority
SE
Sweden
Prior art keywords
photodiod
spectral sensitivity
tailored spectral
absorbing region
diffusion
Prior art date
Application number
SE8106453A
Other languages
English (en)
Inventor
T Brogardh
C Ovren
Original Assignee
Asea Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Ab filed Critical Asea Ab
Priority to SE8106453A priority Critical patent/SE8106453L/sv
Priority to FR8217885A priority patent/FR2515877A1/fr
Priority to DE19823239657 priority patent/DE3239657A1/de
Priority to JP57190665A priority patent/JPS5884473A/ja
Priority to GB08231208A priority patent/GB2108760A/en
Publication of SE8106453L publication Critical patent/SE8106453L/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
SE8106453A 1981-11-02 1981-11-02 Fotodiodstruktur med skreddarsydd spektral kenslighet SE8106453L (sv)

Priority Applications (5)

Application Number Priority Date Filing Date Title
SE8106453A SE8106453L (sv) 1981-11-02 1981-11-02 Fotodiodstruktur med skreddarsydd spektral kenslighet
FR8217885A FR2515877A1 (fr) 1981-11-02 1982-10-26 Photodetecteur a sensibilite spectrale selectionnee
DE19823239657 DE3239657A1 (de) 1981-11-02 1982-10-27 Fotodetektor aus halbleitermaterial
JP57190665A JPS5884473A (ja) 1981-11-02 1982-10-29 ホトダイオ−ド
GB08231208A GB2108760A (en) 1981-11-02 1982-11-01 Semiconductor photodetector having tailored spectral sensitivity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE8106453A SE8106453L (sv) 1981-11-02 1981-11-02 Fotodiodstruktur med skreddarsydd spektral kenslighet

Publications (1)

Publication Number Publication Date
SE8106453L true SE8106453L (sv) 1983-05-03

Family

ID=20344933

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8106453A SE8106453L (sv) 1981-11-02 1981-11-02 Fotodiodstruktur med skreddarsydd spektral kenslighet

Country Status (5)

Country Link
JP (1) JPS5884473A (sv)
DE (1) DE3239657A1 (sv)
FR (1) FR2515877A1 (sv)
GB (1) GB2108760A (sv)
SE (1) SE8106453L (sv)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3743131A1 (de) * 1987-10-26 1989-05-03 Siemens Ag Anordnung zur hochaufloesenden spektroskopie
DE10019089C1 (de) * 2000-04-12 2001-11-22 Epigap Optoelektronik Gmbh Wellenlängenselektive pn-Übergangs-Photodiode

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5516479A (en) * 1978-07-21 1980-02-05 Sumitomo Electric Ind Ltd Heterojunction light receiving diode
US4213138A (en) * 1978-12-14 1980-07-15 Bell Telephone Laboratories, Incorporated Demultiplexing photodetector
GB2095496B (en) * 1981-03-18 1984-08-01 Emi Ltd Doppler radar velocimeter

Also Published As

Publication number Publication date
GB2108760A (en) 1983-05-18
JPS5884473A (ja) 1983-05-20
FR2515877A1 (fr) 1983-05-06
DE3239657A1 (de) 1983-05-19

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