JPS56165370A - Planar type semiconductor photoelectric converting element - Google Patents

Planar type semiconductor photoelectric converting element

Info

Publication number
JPS56165370A
JPS56165370A JP6916980A JP6916980A JPS56165370A JP S56165370 A JPS56165370 A JP S56165370A JP 6916980 A JP6916980 A JP 6916980A JP 6916980 A JP6916980 A JP 6916980A JP S56165370 A JPS56165370 A JP S56165370A
Authority
JP
Japan
Prior art keywords
type semiconductor
peripheral part
wavelength side
converting element
photoelectric converting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6916980A
Other languages
Japanese (ja)
Inventor
Yoshitaka Shibata
Eiji Ikuta
Yoshiki Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Minolta Co Ltd
Original Assignee
Minolta Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minolta Co Ltd filed Critical Minolta Co Ltd
Priority to JP6916980A priority Critical patent/JPS56165370A/en
Publication of JPS56165370A publication Critical patent/JPS56165370A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To give the higher sensitivity on the comparatively shorter wavelength side, by providing a light screening so that a light enters through only the vicinity of the peripheral part of a PN junction plane. CONSTITUTION:The peripheral part 6a of the PN junction plane 6 is formed at the location slightly farther than the periphery of a window 3, by the diffusion not only in the direction of the depth but also in the lateral direction when a P layer is formed. Therefore, the light enters into only a long and narrow region from the peripheral part 6a of the PN junction 6 to the periphery of an electrode 13. As a result, the sensitivity to the comparatively longer wavelength side is decreased, and the sensitivity to the shorter wavelength side is relatively enhanced.
JP6916980A 1980-05-23 1980-05-23 Planar type semiconductor photoelectric converting element Pending JPS56165370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6916980A JPS56165370A (en) 1980-05-23 1980-05-23 Planar type semiconductor photoelectric converting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6916980A JPS56165370A (en) 1980-05-23 1980-05-23 Planar type semiconductor photoelectric converting element

Publications (1)

Publication Number Publication Date
JPS56165370A true JPS56165370A (en) 1981-12-18

Family

ID=13394936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6916980A Pending JPS56165370A (en) 1980-05-23 1980-05-23 Planar type semiconductor photoelectric converting element

Country Status (1)

Country Link
JP (1) JPS56165370A (en)

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