JPS5460881A - Optical action type semiconductor device - Google Patents
Optical action type semiconductor deviceInfo
- Publication number
- JPS5460881A JPS5460881A JP12787977A JP12787977A JPS5460881A JP S5460881 A JPS5460881 A JP S5460881A JP 12787977 A JP12787977 A JP 12787977A JP 12787977 A JP12787977 A JP 12787977A JP S5460881 A JPS5460881 A JP S5460881A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- region
- light reception
- layer
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thyristors (AREA)
Abstract
PURPOSE: To secure an effective use of the light quantity given from the light source by securing a less depth for the junction from the light irradiation surface functioning effectively by the incident rays than the non-light reception region at the light reception region.
CONSTITUTION: N-type 1st base layer 2 is stacked on P-type 1st emitter layer 1, and PN-junction J1 is caused between layer 1 and 2. P-type 2nd base layer 3 is formed on layer 2, and PN-junction J2a and J2b are caused between layer 3 and 2. In this case, central junction J2b corresponding to the light reception region is protruded a little more than junction J2a at the position corresponding to the non-light reception regions at both sides of J2b. After this, N-type auxiliary region 5 is formed within layer 3 facing to the light reception region, and at the same time N-type 2nd emitter region 4 is formed through diffusion sandwiching region 5. The electrode composed of electrode 7 and 8 is attached to region 4 and 5. Thus, junction J2b of the light reception region is formed shallower than junction J2a of the non-light reception region, so the light travelling from the irradiated surface to J2b functions effectively to increase the irradiation sensitivity
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12787977A JPS5460881A (en) | 1977-10-24 | 1977-10-24 | Optical action type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12787977A JPS5460881A (en) | 1977-10-24 | 1977-10-24 | Optical action type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5460881A true JPS5460881A (en) | 1979-05-16 |
Family
ID=14970890
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12787977A Pending JPS5460881A (en) | 1977-10-24 | 1977-10-24 | Optical action type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5460881A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57192075A (en) * | 1981-05-20 | 1982-11-26 | Fuji Electric Corp Res & Dev Ltd | Photo trigger thyristor |
JPS5895866A (en) * | 1981-12-02 | 1983-06-07 | Hitachi Ltd | Optical trigger switching element |
-
1977
- 1977-10-24 JP JP12787977A patent/JPS5460881A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57192075A (en) * | 1981-05-20 | 1982-11-26 | Fuji Electric Corp Res & Dev Ltd | Photo trigger thyristor |
JPS5895866A (en) * | 1981-12-02 | 1983-06-07 | Hitachi Ltd | Optical trigger switching element |
JPH026232B2 (en) * | 1981-12-02 | 1990-02-08 | Hitachi Ltd |
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