JPS5460881A - Optical action type semiconductor device - Google Patents

Optical action type semiconductor device

Info

Publication number
JPS5460881A
JPS5460881A JP12787977A JP12787977A JPS5460881A JP S5460881 A JPS5460881 A JP S5460881A JP 12787977 A JP12787977 A JP 12787977A JP 12787977 A JP12787977 A JP 12787977A JP S5460881 A JPS5460881 A JP S5460881A
Authority
JP
Japan
Prior art keywords
junction
region
light reception
layer
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12787977A
Other languages
Japanese (ja)
Inventor
Kiyohiko Mihara
Akira Kawakami
Tsutomu Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12787977A priority Critical patent/JPS5460881A/en
Publication of JPS5460881A publication Critical patent/JPS5460881A/en
Pending legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE: To secure an effective use of the light quantity given from the light source by securing a less depth for the junction from the light irradiation surface functioning effectively by the incident rays than the non-light reception region at the light reception region.
CONSTITUTION: N-type 1st base layer 2 is stacked on P-type 1st emitter layer 1, and PN-junction J1 is caused between layer 1 and 2. P-type 2nd base layer 3 is formed on layer 2, and PN-junction J2a and J2b are caused between layer 3 and 2. In this case, central junction J2b corresponding to the light reception region is protruded a little more than junction J2a at the position corresponding to the non-light reception regions at both sides of J2b. After this, N-type auxiliary region 5 is formed within layer 3 facing to the light reception region, and at the same time N-type 2nd emitter region 4 is formed through diffusion sandwiching region 5. The electrode composed of electrode 7 and 8 is attached to region 4 and 5. Thus, junction J2b of the light reception region is formed shallower than junction J2a of the non-light reception region, so the light travelling from the irradiated surface to J2b functions effectively to increase the irradiation sensitivity
COPYRIGHT: (C)1979,JPO&Japio
JP12787977A 1977-10-24 1977-10-24 Optical action type semiconductor device Pending JPS5460881A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12787977A JPS5460881A (en) 1977-10-24 1977-10-24 Optical action type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12787977A JPS5460881A (en) 1977-10-24 1977-10-24 Optical action type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5460881A true JPS5460881A (en) 1979-05-16

Family

ID=14970890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12787977A Pending JPS5460881A (en) 1977-10-24 1977-10-24 Optical action type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5460881A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57192075A (en) * 1981-05-20 1982-11-26 Fuji Electric Corp Res & Dev Ltd Photo trigger thyristor
JPS5895866A (en) * 1981-12-02 1983-06-07 Hitachi Ltd Optical trigger switching element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57192075A (en) * 1981-05-20 1982-11-26 Fuji Electric Corp Res & Dev Ltd Photo trigger thyristor
JPS5895866A (en) * 1981-12-02 1983-06-07 Hitachi Ltd Optical trigger switching element
JPH026232B2 (en) * 1981-12-02 1990-02-08 Hitachi Ltd

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