JPS5683979A - Light-receiving element - Google Patents

Light-receiving element

Info

Publication number
JPS5683979A
JPS5683979A JP16102679A JP16102679A JPS5683979A JP S5683979 A JPS5683979 A JP S5683979A JP 16102679 A JP16102679 A JP 16102679A JP 16102679 A JP16102679 A JP 16102679A JP S5683979 A JPS5683979 A JP S5683979A
Authority
JP
Japan
Prior art keywords
layer
light
light absorbing
wave length
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16102679A
Other languages
Japanese (ja)
Inventor
Kazuo Nakajima
Masanori Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16102679A priority Critical patent/JPS5683979A/en
Publication of JPS5683979A publication Critical patent/JPS5683979A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To efficiently absorb lights in a broad wave-length region by a method wherein an AlyGazIn1-y-zAs window layer is formed on an In1-xGaxAs light absorbing layer which constitutes semiconductor light-receiving elements. CONSTITUTION:The In1-xGaAs light absorbing layer 2 having a p<+>n type junction part is made a liquidus-epitaxial growth on an n<+> type In-P substrate, and the AlyGazIn1-y-z window layer 3 is made a liquidus-epitaxial growth on the p<+> type layer as well to make the layer 2 a mesalike to the extent of the bottom. Thus, the window layer 3 of 0.9-1.65mum in the wave length at the absorption edge is piled on the light absorbing layer 2 of 1.65mum in the wave length at the absorption edge to broden the light-receiving wave length region. Whereby a quantum efficiency is improved also and becomes suitable for an avalanche photodiode to amplify photoelectric currents.
JP16102679A 1979-12-12 1979-12-12 Light-receiving element Pending JPS5683979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16102679A JPS5683979A (en) 1979-12-12 1979-12-12 Light-receiving element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16102679A JPS5683979A (en) 1979-12-12 1979-12-12 Light-receiving element

Publications (1)

Publication Number Publication Date
JPS5683979A true JPS5683979A (en) 1981-07-08

Family

ID=15727171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16102679A Pending JPS5683979A (en) 1979-12-12 1979-12-12 Light-receiving element

Country Status (1)

Country Link
JP (1) JPS5683979A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320881A (en) * 1976-08-11 1978-02-25 Nippon Telegr & Teleph Corp <Ntt> Photo semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320881A (en) * 1976-08-11 1978-02-25 Nippon Telegr & Teleph Corp <Ntt> Photo semiconductor device

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