JPS5683979A - Light-receiving element - Google Patents

Light-receiving element

Info

Publication number
JPS5683979A
JPS5683979A JP16102679A JP16102679A JPS5683979A JP S5683979 A JPS5683979 A JP S5683979A JP 16102679 A JP16102679 A JP 16102679A JP 16102679 A JP16102679 A JP 16102679A JP S5683979 A JPS5683979 A JP S5683979A
Authority
JP
Japan
Prior art keywords
layer
light
light absorbing
wave length
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16102679A
Other languages
Japanese (ja)
Inventor
Kazuo Nakajima
Masanori Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16102679A priority Critical patent/JPS5683979A/en
Publication of JPS5683979A publication Critical patent/JPS5683979A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To efficiently absorb lights in a broad wave-length region by a method wherein an AlyGazIn1-y-zAs window layer is formed on an In1-xGaxAs light absorbing layer which constitutes semiconductor light-receiving elements. CONSTITUTION:The In1-xGaAs light absorbing layer 2 having a p<+>n type junction part is made a liquidus-epitaxial growth on an n<+> type In-P substrate, and the AlyGazIn1-y-z window layer 3 is made a liquidus-epitaxial growth on the p<+> type layer as well to make the layer 2 a mesalike to the extent of the bottom. Thus, the window layer 3 of 0.9-1.65mum in the wave length at the absorption edge is piled on the light absorbing layer 2 of 1.65mum in the wave length at the absorption edge to broden the light-receiving wave length region. Whereby a quantum efficiency is improved also and becomes suitable for an avalanche photodiode to amplify photoelectric currents.
JP16102679A 1979-12-12 1979-12-12 Light-receiving element Pending JPS5683979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16102679A JPS5683979A (en) 1979-12-12 1979-12-12 Light-receiving element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16102679A JPS5683979A (en) 1979-12-12 1979-12-12 Light-receiving element

Publications (1)

Publication Number Publication Date
JPS5683979A true JPS5683979A (en) 1981-07-08

Family

ID=15727171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16102679A Pending JPS5683979A (en) 1979-12-12 1979-12-12 Light-receiving element

Country Status (1)

Country Link
JP (1) JPS5683979A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320881A (en) * 1976-08-11 1978-02-25 Nippon Telegr & Teleph Corp <Ntt> Photo semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320881A (en) * 1976-08-11 1978-02-25 Nippon Telegr & Teleph Corp <Ntt> Photo semiconductor device

Similar Documents

Publication Publication Date Title
JPS5345119A (en) Solid state pickup element
JPS5513938A (en) Photoelectronic conversion semiconductor device and its manufacturing method
JPS5513907A (en) Avalnche photo diode with semiconductor hetero construction
US4525731A (en) Semiconductor conversion of optical-to-electrical energy
KR870010640A (en) Avalanche Photodiode
JPS5718372A (en) Semiconductor photoreceiving element
JPS5366390A (en) Longitudinal multi junction solar cell
JPS5683979A (en) Light-receiving element
GB1509144A (en) Avalanche photodiode
JPS577166A (en) Amorphous thin solar cell
JPS53136987A (en) Photo diode
JPS57107082A (en) Detector for infrared ray
JPS5763867A (en) Compound semiconductor avalanche diode
JPS6461964A (en) Semiconductor device
JPS5771191A (en) Photosemiconductor element
JPS5680178A (en) Gaas solar cell
JPS52146580A (en) Photo semiconductor element
JPS577978A (en) Opto-electronic switch
JPS57197877A (en) Photo detector
JPS5635479A (en) Avalanche photodiode
SU448821A1 (en) Semiconductor photocell
JPS53137686A (en) Semiconductor laser unit
JPS6412583A (en) Photodetector
JPS52100982A (en) Semiconductor device
JPS5654080A (en) Avalanche photodiode