JPS57197877A - Photo detector - Google Patents
Photo detectorInfo
- Publication number
- JPS57197877A JPS57197877A JP56082322A JP8232281A JPS57197877A JP S57197877 A JPS57197877 A JP S57197877A JP 56082322 A JP56082322 A JP 56082322A JP 8232281 A JP8232281 A JP 8232281A JP S57197877 A JPS57197877 A JP S57197877A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- window layer
- photodetector
- gasb
- light absorbing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910005542 GaSb Inorganic materials 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000035945 sensitivity Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To expand a responsive wave length range by a photodetector wherein a light absorbing layer which contains Sb and a window layer comprising a mixed crystal which contains Al are laminated on a GaSb substrate. CONSTITUTION:A light absorbing layer 2 comprising either one of GaSb, InPSb, InAsSb or a mixed crystal of them is formed through epitaxial growth on GaSb substrate 1. Then a window layer 3 consisting of AlGaAsSb, AlInAsSb, AlInPSb or AlGaPSb is formed through epitaxial growth thereon. Subsequently, impurities are diffused or ion-injected into the window layer so as to form an impurity doped layer, (7 shows P-N junction), thus constituting a photodetector. By so doing, it becomes possible to attain photodetectors which have sensitivity in a wide wave length range from the visible region to the infrared region.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56082322A JPS57197877A (en) | 1981-05-29 | 1981-05-29 | Photo detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56082322A JPS57197877A (en) | 1981-05-29 | 1981-05-29 | Photo detector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57197877A true JPS57197877A (en) | 1982-12-04 |
Family
ID=13771321
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56082322A Pending JPS57197877A (en) | 1981-05-29 | 1981-05-29 | Photo detector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57197877A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2775388A1 (en) * | 1998-02-26 | 1999-08-27 | Sagem | INDIUM-BASED ALLOY AND INFRARED TRANSDUCER USING SUCH ALLOY |
FR2800201A1 (en) * | 1999-10-26 | 2001-04-27 | Thomson Csf | Photovoltaic detector comprising n and p-doped layers connected by electrodes |
WO2001031685A3 (en) * | 1999-10-28 | 2002-01-10 | Hrl Lab | InPSb/InAs BJT DEVICE AND METHOD OF MAKING |
WO2014002082A3 (en) * | 2012-06-28 | 2014-08-28 | Elta Systems Ltd. | Infrared photodetector device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5320881A (en) * | 1976-08-11 | 1978-02-25 | Nippon Telegr & Teleph Corp <Ntt> | Photo semiconductor device |
JPS55162263A (en) * | 1979-06-01 | 1980-12-17 | Mitsubishi Electric Corp | Semiconductor device |
-
1981
- 1981-05-29 JP JP56082322A patent/JPS57197877A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5320881A (en) * | 1976-08-11 | 1978-02-25 | Nippon Telegr & Teleph Corp <Ntt> | Photo semiconductor device |
JPS55162263A (en) * | 1979-06-01 | 1980-12-17 | Mitsubishi Electric Corp | Semiconductor device |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2775388A1 (en) * | 1998-02-26 | 1999-08-27 | Sagem | INDIUM-BASED ALLOY AND INFRARED TRANSDUCER USING SUCH ALLOY |
EP0939447A1 (en) * | 1998-02-26 | 1999-09-01 | Sagem Sa | Indium based alloy and infrared transducer using the same |
US6274882B1 (en) | 1998-02-26 | 2001-08-14 | Sagem Sa | Indium-based alloy and an infrared transducer using such an alloy |
FR2800201A1 (en) * | 1999-10-26 | 2001-04-27 | Thomson Csf | Photovoltaic detector comprising n and p-doped layers connected by electrodes |
WO2001031685A3 (en) * | 1999-10-28 | 2002-01-10 | Hrl Lab | InPSb/InAs BJT DEVICE AND METHOD OF MAKING |
US6482711B1 (en) | 1999-10-28 | 2002-11-19 | Hrl Laboratories, Llc | InPSb/InAs BJT device and method of making |
US6806512B2 (en) | 1999-10-28 | 2004-10-19 | Hrl Laboratories, Llc | InPSb/InAs BJT device and method of making |
WO2014002082A3 (en) * | 2012-06-28 | 2014-08-28 | Elta Systems Ltd. | Infrared photodetector device |
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