JPS54107376A - Photo detector - Google Patents
Photo detectorInfo
- Publication number
- JPS54107376A JPS54107376A JP1424878A JP1424878A JPS54107376A JP S54107376 A JPS54107376 A JP S54107376A JP 1424878 A JP1424878 A JP 1424878A JP 1424878 A JP1424878 A JP 1424878A JP S54107376 A JPS54107376 A JP S54107376A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light
- type
- phosphorus
- entering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 230000035945 sensitivity Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- -1 silane compound Chemical class 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To obtain a high speed, high sensitivity photo detector, by removing the region having a junction plane in an element structure possessing a planar junction structure, and covering with an insulation film layer so as to prevent the light in the intended wavelength range from entering the element by absorbing such light. CONSTITUTION:On a P<+> type Si substrate 1, a pi type Si layer 2 identical with the substrate is formed by epitaxial growth, and phosphorus is selectively diffused thermally by using a thermally oxidized SiO2 film, and N+ type Si layer 3 and phosphorus are similarly ion-injected to form an n-type Si layer 4 by thermal diffusion. Using a silane compound having such thickness that does not reflect to the wavelength of the incident light, a layer is formed with Si3N4 film 7 by CVD. In order to prevent the light from entering from the outisde of the upper part of the junction plane, polycrystalline GaAs is grown to form a layer 9, so that a majority of light having an energy larger than the forbidden band width of GaAs may be absorbed, thereby never reaching the Si layer. Thus, a high speed, high sensitivity detector may be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1424878A JPS54107376A (en) | 1978-02-10 | 1978-02-10 | Photo detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1424878A JPS54107376A (en) | 1978-02-10 | 1978-02-10 | Photo detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54107376A true JPS54107376A (en) | 1979-08-23 |
Family
ID=11855779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1424878A Pending JPS54107376A (en) | 1978-02-10 | 1978-02-10 | Photo detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54107376A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5693027A (en) * | 1979-12-27 | 1981-07-28 | Hitachi Ltd | Photodetector |
| JPS61131572A (en) * | 1984-11-30 | 1986-06-19 | Hamamatsu Photonics Kk | Semiconductor photodetector |
| US5315148A (en) * | 1990-08-31 | 1994-05-24 | Sumitomo Electric Industries, Ltd. | Photo-sensing device |
-
1978
- 1978-02-10 JP JP1424878A patent/JPS54107376A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5693027A (en) * | 1979-12-27 | 1981-07-28 | Hitachi Ltd | Photodetector |
| JPS61131572A (en) * | 1984-11-30 | 1986-06-19 | Hamamatsu Photonics Kk | Semiconductor photodetector |
| US5315148A (en) * | 1990-08-31 | 1994-05-24 | Sumitomo Electric Industries, Ltd. | Photo-sensing device |
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