JPS54107375A - Photo detector - Google Patents

Photo detector

Info

Publication number
JPS54107375A
JPS54107375A JP1425678A JP1425678A JPS54107375A JP S54107375 A JPS54107375 A JP S54107375A JP 1425678 A JP1425678 A JP 1425678A JP 1425678 A JP1425678 A JP 1425678A JP S54107375 A JPS54107375 A JP S54107375A
Authority
JP
Japan
Prior art keywords
layer
type
substrate
film
thermally
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1425678A
Other languages
Japanese (ja)
Other versions
JPS6032812B2 (en
Inventor
Kenshin Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP53014256A priority Critical patent/JPS6032812B2/en
Publication of JPS54107375A publication Critical patent/JPS54107375A/en
Publication of JPS6032812B2 publication Critical patent/JPS6032812B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

PURPOSE:To realize high speed and obtain a photo detector having excellent characteristics for use in optical communication, by forming a layer showing the reverse conductive type to that of substrate on the surface of a semiconductor substrate, and removing the substrate beneath the light entrance plane. CONSTITUTION:A P<-> type Si layer 2 reverse to substrate is formed on N<+> type Si substrate 1 by epitaxial growth and phosphorus is selectively diffused thermally by using a thermally oxidizing SiO2 film, and N<+> type Si layer 3 and phosphorus are similarly ion-injected and an N type Si layer 4 is formed by thermal diffusion. Using a silane compound having such a thickness that does not cause reflection to the wavelength of incident light, a layer is formed with Si2N4 film 7 by CVD. In order to shield the light from entering from the outside of the upper part of PN junction plane, an aluminum vapor deposition film 9 is provided, and the substrate is selectively removed by etching by using the thermally oxidized SiO2 film. Then, boron is thermally diffused at impurity concentration to form a P+ type Si layer 10. The incident light passing this layer is reflected by an Au film 11.
JP53014256A 1978-02-10 1978-02-10 photodetector Expired JPS6032812B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53014256A JPS6032812B2 (en) 1978-02-10 1978-02-10 photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53014256A JPS6032812B2 (en) 1978-02-10 1978-02-10 photodetector

Publications (2)

Publication Number Publication Date
JPS54107375A true JPS54107375A (en) 1979-08-23
JPS6032812B2 JPS6032812B2 (en) 1985-07-30

Family

ID=11856001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53014256A Expired JPS6032812B2 (en) 1978-02-10 1978-02-10 photodetector

Country Status (1)

Country Link
JP (1) JPS6032812B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61229371A (en) * 1985-04-04 1986-10-13 Kokusai Denshin Denwa Co Ltd <Kdd> Photo diode
JPS6218075A (en) * 1985-07-17 1987-01-27 Agency Of Ind Science & Technol Photoelectric conversion device
JPS63204666A (en) * 1987-02-16 1988-08-24 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Radiation sensing semiconductor device
US5223919A (en) * 1987-02-25 1993-06-29 U. S. Philips Corp. Photosensitive device suitable for high voltage operation
EP0601561A1 (en) * 1992-12-08 1994-06-15 Terumo Kabushiki Kaisha Photoelectric device
US5757057A (en) * 1997-06-25 1998-05-26 Advanced Photonix, Inc. Large area avalanche photodiode array

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61229371A (en) * 1985-04-04 1986-10-13 Kokusai Denshin Denwa Co Ltd <Kdd> Photo diode
JPS6218075A (en) * 1985-07-17 1987-01-27 Agency Of Ind Science & Technol Photoelectric conversion device
JPS63204666A (en) * 1987-02-16 1988-08-24 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Radiation sensing semiconductor device
US4857980A (en) * 1987-02-16 1989-08-15 U.S. Philips Corp. Radiation-sensitive semiconductor device with active screening diode
US5223919A (en) * 1987-02-25 1993-06-29 U. S. Philips Corp. Photosensitive device suitable for high voltage operation
EP0601561A1 (en) * 1992-12-08 1994-06-15 Terumo Kabushiki Kaisha Photoelectric device
US5757057A (en) * 1997-06-25 1998-05-26 Advanced Photonix, Inc. Large area avalanche photodiode array

Also Published As

Publication number Publication date
JPS6032812B2 (en) 1985-07-30

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