JPS5526661A - Photo-semiconductor device - Google Patents
Photo-semiconductor deviceInfo
- Publication number
- JPS5526661A JPS5526661A JP9968678A JP9968678A JPS5526661A JP S5526661 A JPS5526661 A JP S5526661A JP 9968678 A JP9968678 A JP 9968678A JP 9968678 A JP9968678 A JP 9968678A JP S5526661 A JPS5526661 A JP S5526661A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- region
- diode
- short
- type region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To lower the spectral sensitivity characteristic by deeply pentrably long wavelength by forming PN iuntions of different depth in a semiconductor substrate and short-circuitting the deeper PN juction at the outside.
CONSTITUTION: A P type region 2 is formed by diffusion in a N-type Si substrate 1, a shallow N+-type region 3 is formed in the region 2 and a N+-type region 4 for an ohmic contact is provided in the end of the substrate 1. A PN-junction 5 is occurred between the region 2 and substrate 1 to form a first photo diode PD1 and a PN junction 6 is produced between the regions 2 and 3 to form a second photo diode PD2. Subsequently, the full surface is covered with a light transmitting insulation layer 7 for preventing a reflection, an opening window is proveded, an electrode 8 to 10 are attached in the regions 2, 3 and 4 and the intermediate line between the electrodes 8 and 9 are jointed by an Al wiring 11. According to such a process, the light output current due to the long wavelength generated in the diode PD1 at the deeper position is short-circuited by the electrodes 8 and 9 and only the light output current of a short wavelength generated in the diode PD1 at the shallow position can be taken out.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9968678A JPS5526661A (en) | 1978-08-15 | 1978-08-15 | Photo-semiconductor device |
US06/060,188 US4318115A (en) | 1978-07-24 | 1979-07-24 | Dual junction photoelectric semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9968678A JPS5526661A (en) | 1978-08-15 | 1978-08-15 | Photo-semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5526661A true JPS5526661A (en) | 1980-02-26 |
Family
ID=14253913
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9968678A Pending JPS5526661A (en) | 1978-07-24 | 1978-08-15 | Photo-semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5526661A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009506543A (en) * | 2005-08-23 | 2009-02-12 | ノーブル ピーク ヴィジョン コーポレーション | Low noise semiconductor photodetector |
JP2012501554A (en) * | 2008-08-29 | 2012-01-19 | タウ−メトリックス インコーポレイテッド | Integrated photodiode for semiconductor substrates |
-
1978
- 1978-08-15 JP JP9968678A patent/JPS5526661A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009506543A (en) * | 2005-08-23 | 2009-02-12 | ノーブル ピーク ヴィジョン コーポレーション | Low noise semiconductor photodetector |
JP2012501554A (en) * | 2008-08-29 | 2012-01-19 | タウ−メトリックス インコーポレイテッド | Integrated photodiode for semiconductor substrates |
JP2014140065A (en) * | 2008-08-29 | 2014-07-31 | Tau-Metrix Inc | Integrated photodiode for semiconductor substrates |
US8872297B2 (en) | 2008-08-29 | 2014-10-28 | Tau-Metrix, Inc. | Integrated photodiode for semiconductor substrates |
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