JPS5526661A - Photo-semiconductor device - Google Patents

Photo-semiconductor device

Info

Publication number
JPS5526661A
JPS5526661A JP9968678A JP9968678A JPS5526661A JP S5526661 A JPS5526661 A JP S5526661A JP 9968678 A JP9968678 A JP 9968678A JP 9968678 A JP9968678 A JP 9968678A JP S5526661 A JPS5526661 A JP S5526661A
Authority
JP
Japan
Prior art keywords
substrate
region
diode
short
type region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9968678A
Other languages
Japanese (ja)
Inventor
Toshibumi Yoshikawa
Yoshihei Tani
Akira Aso
Hitoshi Kawakunibe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP9968678A priority Critical patent/JPS5526661A/en
Priority to US06/060,188 priority patent/US4318115A/en
Publication of JPS5526661A publication Critical patent/JPS5526661A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To lower the spectral sensitivity characteristic by deeply pentrably long wavelength by forming PN iuntions of different depth in a semiconductor substrate and short-circuitting the deeper PN juction at the outside.
CONSTITUTION: A P type region 2 is formed by diffusion in a N-type Si substrate 1, a shallow N+-type region 3 is formed in the region 2 and a N+-type region 4 for an ohmic contact is provided in the end of the substrate 1. A PN-junction 5 is occurred between the region 2 and substrate 1 to form a first photo diode PD1 and a PN junction 6 is produced between the regions 2 and 3 to form a second photo diode PD2. Subsequently, the full surface is covered with a light transmitting insulation layer 7 for preventing a reflection, an opening window is proveded, an electrode 8 to 10 are attached in the regions 2, 3 and 4 and the intermediate line between the electrodes 8 and 9 are jointed by an Al wiring 11. According to such a process, the light output current due to the long wavelength generated in the diode PD1 at the deeper position is short-circuited by the electrodes 8 and 9 and only the light output current of a short wavelength generated in the diode PD1 at the shallow position can be taken out.
COPYRIGHT: (C)1980,JPO&Japio
JP9968678A 1978-07-24 1978-08-15 Photo-semiconductor device Pending JPS5526661A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9968678A JPS5526661A (en) 1978-08-15 1978-08-15 Photo-semiconductor device
US06/060,188 US4318115A (en) 1978-07-24 1979-07-24 Dual junction photoelectric semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9968678A JPS5526661A (en) 1978-08-15 1978-08-15 Photo-semiconductor device

Publications (1)

Publication Number Publication Date
JPS5526661A true JPS5526661A (en) 1980-02-26

Family

ID=14253913

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9968678A Pending JPS5526661A (en) 1978-07-24 1978-08-15 Photo-semiconductor device

Country Status (1)

Country Link
JP (1) JPS5526661A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009506543A (en) * 2005-08-23 2009-02-12 ノーブル ピーク ヴィジョン コーポレーション Low noise semiconductor photodetector
JP2012501554A (en) * 2008-08-29 2012-01-19 タウ−メトリックス インコーポレイテッド Integrated photodiode for semiconductor substrates

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009506543A (en) * 2005-08-23 2009-02-12 ノーブル ピーク ヴィジョン コーポレーション Low noise semiconductor photodetector
JP2012501554A (en) * 2008-08-29 2012-01-19 タウ−メトリックス インコーポレイテッド Integrated photodiode for semiconductor substrates
JP2014140065A (en) * 2008-08-29 2014-07-31 Tau-Metrix Inc Integrated photodiode for semiconductor substrates
US8872297B2 (en) 2008-08-29 2014-10-28 Tau-Metrix, Inc. Integrated photodiode for semiconductor substrates

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