JPS5664477A - Hetero-junction avalanche-photodiode - Google Patents
Hetero-junction avalanche-photodiodeInfo
- Publication number
- JPS5664477A JPS5664477A JP14061779A JP14061779A JPS5664477A JP S5664477 A JPS5664477 A JP S5664477A JP 14061779 A JP14061779 A JP 14061779A JP 14061779 A JP14061779 A JP 14061779A JP S5664477 A JPS5664477 A JP S5664477A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light absorbing
- type
- junction
- absorbing layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000005684 electric field Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000005284 excitation Effects 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To obtain a device having excellent characteristics by a method wherein a semiconductor layer, prohibiting band width thereof is larger than that of a light absorbing layer and an inside thereof has a P-N junction, is formed onto the light absorbing layer forming electrons and holes due to optical excitation, and the maximum electric field in the light absorbing layer is made 300V/cm or less when applying inverse bias. CONSTITUTION:An N<+> type InP layer 12 and an N type In0.79Ga0.21As0.47P0.53 light absorbing layer 13 are laminated on an N<+> type InP substrate 11 and grown in liquid-phase epitaxial shapes, an N type InP layer 14 is made up on the layer 13, Cd is diffused into the layer 14 by using Cd3P2 as a diffusion source to form a region 14', and a P-N junction 15 is built up in the layer 14. A surface of the layer 14' is coated with a protective film 16 in Si3N4 or SiO2, a circular window is bored, a P type electrode 17 is mounted to the layer 14', the back of the substrate 11 is covered with an N type electrode 18, the electrode is used as a diode, and inverse bias, the maximum electric field thereof is made 300V/cm or less, is applied to the layer 13. Thus, the diode having excellent reverse direction characteristics and noise characteristics is obtained even when a semiconductor having an inferior crystallizing property is used for a semiconductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14061779A JPS5664477A (en) | 1979-10-30 | 1979-10-30 | Hetero-junction avalanche-photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14061779A JPS5664477A (en) | 1979-10-30 | 1979-10-30 | Hetero-junction avalanche-photodiode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5664477A true JPS5664477A (en) | 1981-06-01 |
Family
ID=15272865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14061779A Pending JPS5664477A (en) | 1979-10-30 | 1979-10-30 | Hetero-junction avalanche-photodiode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5664477A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5856364A (en) * | 1981-09-08 | 1983-04-04 | ア−・エヌ・テ−・ナッハリヒテンテヒニ−ク・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | Input stage for photoreceiver formed as monolithic |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5416196A (en) * | 1977-07-06 | 1979-02-06 | Nec Corp | Hetero junction avalanche photo diode |
-
1979
- 1979-10-30 JP JP14061779A patent/JPS5664477A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5416196A (en) * | 1977-07-06 | 1979-02-06 | Nec Corp | Hetero junction avalanche photo diode |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5856364A (en) * | 1981-09-08 | 1983-04-04 | ア−・エヌ・テ−・ナッハリヒテンテヒニ−ク・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | Input stage for photoreceiver formed as monolithic |
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