JPS5635479A - Avalanche photodiode - Google Patents

Avalanche photodiode

Info

Publication number
JPS5635479A
JPS5635479A JP11022079A JP11022079A JPS5635479A JP S5635479 A JPS5635479 A JP S5635479A JP 11022079 A JP11022079 A JP 11022079A JP 11022079 A JP11022079 A JP 11022079A JP S5635479 A JPS5635479 A JP S5635479A
Authority
JP
Japan
Prior art keywords
carrier
layer
ratio
degree
quantum efficiency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11022079A
Other languages
Japanese (ja)
Inventor
Masanori Ito
Takao Kaneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11022079A priority Critical patent/JPS5635479A/en
Publication of JPS5635479A publication Critical patent/JPS5635479A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To contrive the improvements in the quantum efficiency and the S/N ratio of the avalanche photodiode by employing one having larger ratio of the ionization degree of of two crystals to multiply the carrier. CONSTITUTION:A semiconductor layer 10 is determined by considering a basic absorption edge, and incident light is exclusively absorbed, and carrier 14 is generated. Assume that the ionization degree beta (positive) of the layer is 10<alpha(electron). When the ionization degree ratio R is in the same degree or higher in a semiconductor 11, which is superimposed thereon, the carrier can be multiplied irrespective of the R of the layer 10, the larger the R is, the lower the noise is reduced. Even if the R is in the same degree, the affect of the carrier recombination is reduced at the hetero junction boundary between the layers 10 and 11, and the quantum efficiency thereof can be improved. The P-N junction 12 is isolated longer than 0.3mum at the side of the layer 11 from the hetero junction boundary, the tunnel current and emission current caused by the high electric field applied to the multiplied region are prevented, and uniform avalanche breakdown can be retained.
JP11022079A 1979-08-31 1979-08-31 Avalanche photodiode Pending JPS5635479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11022079A JPS5635479A (en) 1979-08-31 1979-08-31 Avalanche photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11022079A JPS5635479A (en) 1979-08-31 1979-08-31 Avalanche photodiode

Publications (1)

Publication Number Publication Date
JPS5635479A true JPS5635479A (en) 1981-04-08

Family

ID=14530116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11022079A Pending JPS5635479A (en) 1979-08-31 1979-08-31 Avalanche photodiode

Country Status (1)

Country Link
JP (1) JPS5635479A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58169967A (en) * 1982-03-30 1983-10-06 Fujitsu Ltd Semiconductor light receiving device
JPS62200774A (en) * 1986-02-28 1987-09-04 Hitachi Ltd Semiconductor photodetector
JPS6325961U (en) * 1986-07-31 1988-02-20
JPS63252188A (en) * 1987-04-10 1988-10-19 大房　利隆 Scissors

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS=1979 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58169967A (en) * 1982-03-30 1983-10-06 Fujitsu Ltd Semiconductor light receiving device
JPS62200774A (en) * 1986-02-28 1987-09-04 Hitachi Ltd Semiconductor photodetector
JPS6325961U (en) * 1986-07-31 1988-02-20
JPS63252188A (en) * 1987-04-10 1988-10-19 大房　利隆 Scissors

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