JPS54132183A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54132183A
JPS54132183A JP4091078A JP4091078A JPS54132183A JP S54132183 A JPS54132183 A JP S54132183A JP 4091078 A JP4091078 A JP 4091078A JP 4091078 A JP4091078 A JP 4091078A JP S54132183 A JPS54132183 A JP S54132183A
Authority
JP
Japan
Prior art keywords
layer
type
depth
transistor
conversion element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4091078A
Other languages
Japanese (ja)
Other versions
JPS5812744B2 (en
Inventor
Toshibumi Yoshikawa
Kiyoshi Ebina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP53040910A priority Critical patent/JPS5812744B2/en
Publication of JPS54132183A publication Critical patent/JPS54132183A/en
Publication of JPS5812744B2 publication Critical patent/JPS5812744B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE: To enhance the operation characteristics of the device by setting the depth of the buried layer where the conversion element is to be provided larger than the depth of the buried layer where the IC element is to be provided when both the IC element and the photoelectric conversion element are provided on each buried layer within the same chip.
CONSTITUTION: N-type buried layer 11 and 12 are formed by diffusion on the surface of P-type Si substrate 10 in opposition to the IC element and the photoelectric conversion element to be provided later. In this case, the depth of layer 11 corresponding to the IC element such as the diode, transistor, etc. is set to several μm ∼ several tens of μm; while the depth of layer 12 corresponding to the photoelectric conversion element such as the photo diode, photo transistor, etc. is set to about 50μm (deeper than layer 12). After this, N-type layer 13 is epitaxial-grown on the entire surface to form P+-type isolation region 14 by diffusion. Then N-type impurity is diffused within island region 15 on layer 11 enclosed by region 14 with the diode, transistor, etc. provided. At the same time, P- or N-type impurity is diffused to island 15' on layer 12 to form the photo diode or photo transistor. Thus, the illumination light can be utilized effectively.
COPYRIGHT: (C)1979,JPO&Japio
JP53040910A 1978-04-06 1978-04-06 semiconductor equipment Expired JPS5812744B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53040910A JPS5812744B2 (en) 1978-04-06 1978-04-06 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53040910A JPS5812744B2 (en) 1978-04-06 1978-04-06 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS54132183A true JPS54132183A (en) 1979-10-13
JPS5812744B2 JPS5812744B2 (en) 1983-03-10

Family

ID=12593655

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53040910A Expired JPS5812744B2 (en) 1978-04-06 1978-04-06 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5812744B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5041392A (en) * 1984-10-18 1991-08-20 Matsushita Electronics Corporation Method for making solid state image sensing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5041392A (en) * 1984-10-18 1991-08-20 Matsushita Electronics Corporation Method for making solid state image sensing device

Also Published As

Publication number Publication date
JPS5812744B2 (en) 1983-03-10

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