KR920005395A - 광전장치 - Google Patents

광전장치 Download PDF

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Publication number
KR920005395A
KR920005395A KR1019910015188A KR910015188A KR920005395A KR 920005395 A KR920005395 A KR 920005395A KR 1019910015188 A KR1019910015188 A KR 1019910015188A KR 910015188 A KR910015188 A KR 910015188A KR 920005395 A KR920005395 A KR 920005395A
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South Korea
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region
semiconductor
photovoltaic device
semiconductor layer
layer
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KR1019910015188A
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KR950003950B1 (ko
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이찌로 토나이
Original Assignee
나까하라 쯔네오
스미도모덴기 고오교오 가부시기가이샤
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Publication of KR920005395A publication Critical patent/KR920005395A/ko
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Publication of KR950003950B1 publication Critical patent/KR950003950B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)

Abstract

내용 없음

Description

제목 광전장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도(A) 및 제3도(B)는 각각 본 발명의 광전장치의 기본구조를 도시한 도면,
제4도(A) 및 제3도(B)는 각각 본 발명의 제1실시예에 의한 광전장치의 구조를 도시한 도면,
제5도는 제1실시예의 광전구조의 밴드갭에너지 차아트를 도시한 도면.

Claims (16)

  1. 광전영역으로서, 제1도전형의 반도체층의 일부분에 제2도전형의 제1영역을 선택적으로 설치하므로서 형성된 pn접합영역을 가진 상부유입형 광전 장치에 있어서, 상기 제1영역이 상기 반도체층의 일부분에 형성된 제2도전형의 제2영역에 의해 둘러싸여 있는 것을 특징으로 하는 광전장치.
  2. 제1항에 있어서, 상기 반도체층이 상기 반도체기판과 동일한 조성을 가지는 반도체의 결정성장에 의해 형성되는 것을 특징으로 하는 광전장치.
  3. 제1항에 있어서, 상기 반도체층은, 불순물의 농도가 상기 반도체 기판보다 낮은 복수개의 반도체층을 적층하여 형성되고, 상기 복수개의 반도체중 상기 반도체기판과 접촉하지 않는 적어도 한층은, 조성이 상기 반도체 기판과 상이한 것을 특징으로 하는 광전장치.
  4. 제3항에 있어서, 상기 반도체 기판은 n+형 InP(인듐-인)기판이며, 상기 반도체층은 n형 InP버퍼층과, n형 InGaAs(인듐-갈륨-비소)광흡수층과, n형 InP윈도층을 순차로 적층하여 형성된 것을 특징으로 하는 광전장치.
  5. 제2항에 있어서, 상기 제2영역과 상기 제1영역의 길이가 동일한 것을 특징으로 하는 광전장치.
  6. 제3항에 있어서, 상기 제2영역과 상기 제1영역의 길이가 동일한 것을 특징으로 하는 광전장치.
  7. 제2항에 있어서, 상기 제2영역의 깊이가 상기 제1영역보다 깊은 것을 특징으로 하는 광전장치.
  8. 제3항에 있어서, 상기 제2영역의 깊이가 상기 제1영역보다 깊은 것을 특징으로 하는 광전장치.
  9. 제5항에 있어서, 상기 제1영역과 상기 반도체층사이에는 역전압이 인가되는 것을 특징으로 하는 광전장치.
  10. 제6항에 있어서, 상기 제1영역과 상기 반도체층사이에는 역전압이 인가되는 것을 특징으로 하는 광전장치.
  11. 제7항에 있어서, 상기 제2영역상에는 전하유출전극이 형성되어 있는 것을 특징으로 하는 광전장치.
  12. 제5항에 있어서, 상기 제1영역을 제외한 상기 반도체의 상부면이 금속막으로 피복되어 있는 것을 특징으로 하는 광전장치.
  13. 제6항에 있어서, 상기 제1영역을 제외한 상기 반도체의 상부면이 금속막으로 피복되어 있는 것을 특징으로 하는 광전장치.
  14. 제5항에 있어서, 상기 제2영역상에 전하유출전극이 형성되어 있는 것을 특징으로 하는 광전장치.
  15. 제6항에 있어서, 상기 제2영역상에 전하유출전극이 형성되어 있는 것을 특징으로 하는 광전장치.
  16. 제8항에 있어서, 상기 제2영역상에 전하유출전극이 형성되어 있는 것을 특징으로 하는 광전장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910015188A 1990-08-31 1991-08-31 수광소자 KR950003950B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP90-230206 1990-08-31
JP2230206A JPH04111477A (ja) 1990-08-31 1990-08-31 受光素子

Publications (2)

Publication Number Publication Date
KR920005395A true KR920005395A (ko) 1992-03-28
KR950003950B1 KR950003950B1 (ko) 1995-04-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910015188A KR950003950B1 (ko) 1990-08-31 1991-08-31 수광소자

Country Status (6)

Country Link
US (1) US5304824A (ko)
EP (1) EP0473198B1 (ko)
JP (1) JPH04111477A (ko)
KR (1) KR950003950B1 (ko)
CA (1) CA2050435C (ko)
DE (1) DE69128751T2 (ko)

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JP3245838B2 (ja) * 1992-02-03 2002-01-15 住友電気工業株式会社 半導体レーザ装置
US5542018A (en) * 1990-08-31 1996-07-30 Kuhara; Yoshiki Semiconductor laser device making use of photodiode chip
CA2119176C (en) * 1993-03-19 1998-06-23 Masahiro Kobayashi Semiconductor light detecting device
US5668395A (en) * 1994-11-22 1997-09-16 Northwestern University Composition for InSB and GaAs thin film on silicon substrate for use in photodetectors
JPH08204224A (ja) * 1995-01-23 1996-08-09 Sumitomo Electric Ind Ltd 化合物半導体受光素子及びその製造方法
JPH09289333A (ja) * 1996-04-23 1997-11-04 Mitsubishi Electric Corp 半導体受光素子
JP3436009B2 (ja) * 1996-07-31 2003-08-11 住友電気工業株式会社 光半導体素子
CA2227804C (en) * 1997-02-03 2002-10-01 Yasushi Fujimura Photodiode module and method of making same
US6081020A (en) * 1998-02-20 2000-06-27 Lucent Technologies Inc. Linear PIN photodiode
US6326649B1 (en) * 1999-01-13 2001-12-04 Agere Systems, Inc. Pin photodiode having a wide bandwidth
JP2008066497A (ja) * 2006-09-07 2008-03-21 Sony Corp 受光装置および受光装置の製造方法
JP5560818B2 (ja) 2010-03-25 2014-07-30 住友電気工業株式会社 受光素子、受光素子アレイ、ハイブリッド型検出装置、光学センサ装置
WO2020121852A1 (ja) 2018-12-12 2020-06-18 浜松ホトニクス株式会社 光検出装置
WO2020121851A1 (ja) * 2018-12-12 2020-06-18 浜松ホトニクス株式会社 光検出装置
JP7454917B2 (ja) 2018-12-12 2024-03-25 浜松ホトニクス株式会社 光検出装置
US11513002B2 (en) 2018-12-12 2022-11-29 Hamamatsu Photonics K.K. Light detection device having temperature compensated gain in avalanche photodiode

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JPS5833881A (ja) * 1981-08-21 1983-02-28 Mitsubishi Electric Corp 光電変換装置
JPS60171768A (ja) * 1984-02-17 1985-09-05 Internatl Rectifier Corp Japan Ltd プレ−ナ型半導体装置
JPS60182778A (ja) * 1984-02-29 1985-09-18 Fujitsu Ltd 半導体受光装置
JPS6195580A (ja) * 1984-10-17 1986-05-14 Hitachi Ltd 受光素子およびこの受光素子を内臓した光電子装置
JPH0799782B2 (ja) * 1985-06-18 1995-10-25 株式会社ニコン 半導体光検出装置
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Also Published As

Publication number Publication date
EP0473198A1 (en) 1992-03-04
DE69128751D1 (de) 1998-02-26
EP0473198B1 (en) 1998-01-21
JPH04111477A (ja) 1992-04-13
KR950003950B1 (ko) 1995-04-21
US5304824A (en) 1994-04-19
CA2050435C (en) 1999-02-02
DE69128751T2 (de) 1998-08-27
CA2050435A1 (en) 1992-03-01

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