KR940022927A - 적외선 광 검출기 - Google Patents

적외선 광 검출기

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Publication number
KR940022927A
KR940022927A KR1019930004109A KR930004109A KR940022927A KR 940022927 A KR940022927 A KR 940022927A KR 1019930004109 A KR1019930004109 A KR 1019930004109A KR 930004109 A KR930004109 A KR 930004109A KR 940022927 A KR940022927 A KR 940022927A
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KR
South Korea
Prior art keywords
semiconductor layer
infrared
infrared photodetector
layer
delta
Prior art date
Application number
KR1019930004109A
Other languages
English (en)
Other versions
KR960004594B1 (ko
Inventor
안도열
Original Assignee
이헌조
주식회사 금성사
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Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019930004109A priority Critical patent/KR960004594B1/ko
Priority to JP6043496A priority patent/JPH06302846A/ja
Publication of KR940022927A publication Critical patent/KR940022927A/ko
Priority to US08/517,671 priority patent/US5757025A/en
Application granted granted Critical
Publication of KR960004594B1 publication Critical patent/KR960004594B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H01L31/035263—Doping superlattices, e.g. nipi superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)

Abstract

본 발명은 적외선 광검출기에 관한 것으로, 반도체 기판상에 델타도핑층을 형성하여, 여기에 형성되는 양자우물 장벽층을 이용하여, 적외선 검출기에 입사되는 빛으로부터 적외선의 특파장을 감지하도록 하고, 텔타도핑층의 도판트농도를 조절하여 이로부터 감지되는 적외성 파장을 조절하도록 하여 장파장의 적외선을 상온에서 감지하도록 한 것이다.

Description

적외선 광 검출기
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도(a)는 본 발명에 따른 델타도핑 단면도, (b)는 (a)의 양자 장벽을 나타낸 개략도, 제3도는 제2도에 따른 각 델타도핑층의 농도 대광에너지 비를 나타낸 그래프.

Claims (8)

  1. 반도체기판(1)상에 양자 장벽을 형성하기 위해 복수개의 델타도핑층(2a)으로 형성되는 델타도핑 반도체층(2)과, 상기 델타도핑 반도체층(2)위에 전위장벽을 낮추기 위해 형성되는 고농도의 제1도정형 반도체층(3)과, 상기 반도체층(3)상에 형성된 캠용 고농도 제1도전형 반도체층(4)과, 상기 반도체층(4)상에 전극(5)이 형성됨을 특징으로 하는 적외선 광검출기.
  2. 제1항에 있어서, 반도체기판(1)으로 GaAs, 또는 InGaP, 또는 InP을 이용함을 특징으로 하는 적외선 광검출기.
  3. 제1항에 있어서, 델타도핑 반도체층(2)은 반도체기판(1)상에 결정성장중 성장을 중지하고, 1∼2개의 단일층의 도판트(Dopant)를 적층한뒤 단결정 상장을 계속하여 형성됨을 특징으로 하는 적외선 광검출기.
  4. 제3항에 있어서, 델타도핑층(2a)의 도판트(Dopant)로는 Si 및 Ba을 사용함을 특징으로 하는 적외선 광검출기.
  5. 제3항에 있어서, 델타도핑층(2a)이 도판트층은 5∼30Å의 두께로 형성됨을 특징으로 하는 적외선 광검출기.
  6. 제3항에 있어서, 델타도핑층(2a)의 도핑농도는 흡수광의 감지하고자 하는 적외선 파장을 고려하여 결정됨을 특징으로 하는 적외성 광검출기.
  7. 제1항에 있어서, 제1도전형 반도체층(3)은 반도체기판(1) 및 델타도핑 반도체층(2)보다 에너지 밴드갭이 낮은 반도체층으로 형성됨을 특징으로 하는 적외선 광검출기.
  8. 제1항에 있어서, 델타도핑 반도체층(2)은 반도체기판(1)과 동일한 종류의 반도체로 형성됨을 특징으로 하는 적외선 광검출기.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930004109A 1993-03-17 1993-03-17 적외선 광 검출기 KR960004594B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019930004109A KR960004594B1 (ko) 1993-03-17 1993-03-17 적외선 광 검출기
JP6043496A JPH06302846A (ja) 1993-03-17 1994-03-15 デルタドーピングされた半導体を利用した赤外線光検出器
US08/517,671 US5757025A (en) 1993-03-17 1995-08-22 Infrared photodetector using delta-doped semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930004109A KR960004594B1 (ko) 1993-03-17 1993-03-17 적외선 광 검출기

Publications (2)

Publication Number Publication Date
KR940022927A true KR940022927A (ko) 1994-10-22
KR960004594B1 KR960004594B1 (ko) 1996-04-09

Family

ID=19352325

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930004109A KR960004594B1 (ko) 1993-03-17 1993-03-17 적외선 광 검출기

Country Status (3)

Country Link
US (1) US5757025A (ko)
JP (1) JPH06302846A (ko)
KR (1) KR960004594B1 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170010371A (ko) * 2014-05-27 2017-01-31 더 실라나 그룹 피티와이 리미티드 n-형 및 p-형 초격자를 포함하는 전자 디바이스
US11862750B2 (en) 2014-05-27 2024-01-02 Silanna UV Technologies Pte Ltd Optoelectronic device

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000021731A (ja) * 1998-07-02 2000-01-21 Advantest Corp 荷電粒子ビーム露光装置
US6344650B1 (en) * 1999-04-23 2002-02-05 Sandia Corporation Electron gas grid semiconductor radiation detectors
GB0030204D0 (en) * 2000-12-12 2001-01-24 Secr Defence Reduced noise semiconductor photodetector
US20090218563A1 (en) * 2008-02-28 2009-09-03 Bruce Alvin Gurney Novel fabrication of semiconductor quantum well heterostructure devices
WO2010077984A2 (en) * 2008-12-16 2010-07-08 California Institute Of Technology Digital alloy absorber for photodetectors
KR101376976B1 (ko) * 2012-06-29 2014-03-21 인텔렉추얼디스커버리 주식회사 반도체 발광 디바이스

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4882609A (en) * 1984-11-19 1989-11-21 Max-Planck Gesellschaft Zur Forderung Der Wissenschafter E.V. Semiconductor devices with at least one monoatomic layer of doping atoms
US5060234A (en) * 1984-11-19 1991-10-22 Max-Planck Gesellschaft Zur Forderung Der Wissenschaften Injection laser with at least one pair of monoatomic layers of doping atoms
US4894526A (en) * 1987-01-15 1990-01-16 American Telephone And Telegraph Company, At&T Bell Laboratories Infrared-radiation detector device
US4873555A (en) * 1987-06-08 1989-10-10 University Of Pittsburgh Of The Commonwealth System Of Higher Education Intraband quantum well photodetector and associated method
US5023685A (en) * 1988-06-06 1991-06-11 Bethea Clyde G Quantum-well radiation-interactive device, and methods of radiation detection and modulation
US4929064A (en) * 1988-07-21 1990-05-29 American Telephone And Telegraph Company Optical communications modulator device
US4974044A (en) * 1989-04-21 1990-11-27 At&T Bell Laboratories Devices having asymmetric delta-doping
US5031012A (en) * 1989-04-21 1991-07-09 At&T Bell Laboratories Devices having asymmetric delta-doping
US5013685A (en) * 1989-11-02 1991-05-07 At&T Bell Laboratories Method of making a non-alloyed ohmic contact to III-V semiconductors-on-silicon
US5311009A (en) * 1992-07-31 1994-05-10 At&T Bell Laboratories Quantum well device for producing localized electron states for detectors and modulators

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170010371A (ko) * 2014-05-27 2017-01-31 더 실라나 그룹 피티와이 리미티드 n-형 및 p-형 초격자를 포함하는 전자 디바이스
US11862750B2 (en) 2014-05-27 2024-01-02 Silanna UV Technologies Pte Ltd Optoelectronic device

Also Published As

Publication number Publication date
JPH06302846A (ja) 1994-10-28
KR960004594B1 (ko) 1996-04-09
US5757025A (en) 1998-05-26

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