KR940016964A - 초격자구조(superlattice)의 증폭층을 갖는 애벌란체 포토다이오드(APD:Avalanche Photodiode) - Google Patents

초격자구조(superlattice)의 증폭층을 갖는 애벌란체 포토다이오드(APD:Avalanche Photodiode) Download PDF

Info

Publication number
KR940016964A
KR940016964A KR1019920025002A KR920025002A KR940016964A KR 940016964 A KR940016964 A KR 940016964A KR 1019920025002 A KR1019920025002 A KR 1019920025002A KR 920025002 A KR920025002 A KR 920025002A KR 940016964 A KR940016964 A KR 940016964A
Authority
KR
South Korea
Prior art keywords
layer
type
avalanche photodiode
superlattice
apd
Prior art date
Application number
KR1019920025002A
Other languages
English (en)
Other versions
KR960001467B1 (ko
Inventor
유지범
박찬용
김흥만
Original Assignee
양승택
재단법인 한국전자통신연구소
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 양승택, 재단법인 한국전자통신연구소 filed Critical 양승택
Priority to KR1019920025002A priority Critical patent/KR960001467B1/ko
Priority to US08/149,775 priority patent/US5369292A/en
Priority to JP5318157A priority patent/JP2695112B2/ja
Publication of KR940016964A publication Critical patent/KR940016964A/ko
Application granted granted Critical
Publication of KR960001467B1 publication Critical patent/KR960001467B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)

Abstract

초격자구조를 증폭층으로 사용하는 애벌란체 포토다이오드의 구조에 있어서, n+형 InP기판(10)과, 기판(10)상에 버퍼층으로 형성된 n+형 InP에피택셜층(11)과, 에피택셜층(11)상에 형성된 n형 In1-xAlxAs층(12)과, In1-xAlxAs층(12)보다 불순물 농도가 상대적으로 크게하여 층(12)상에 형성된 n+형 In1-xAlxAs층(13)과, 층(13)상에 형성된 In0.53Ga0.47As/In1-xAlxAs의 초격자 구조를 갖는 증폭층(14)과, 증폭층(14)상에 순차형성된 p형 In1-xAlxAs층(15)(16)과, 층(16)상에 형성된 In0.53Ga0.47As로된 흡수층(17)과 흡수층(17)상에 순차 형성된 표면누설 전류량 감소용 p형 InP층(18)과 오믹접합용 In0.53Ga0.47As층(19)을 포함하는 구성을 특징으로 하는 애벌란체 포토다이오드의 구조.

Description

초격자구조(superlattice)의 증폭층을 갖는 애벌란체 포토다이오드(APD : Avalanche Photodiode)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 일반적인 InAlAs/InGaAs(P) 초격자의 증폭층을 갖는 종래의 APD의 구조적 단면도, 제 2 도는 본 발명에 따라 InAlAs/InGaAs의 초격자 구조를 증폭층으로 이용한 APD의 단면도.

Claims (3)

  1. 초격자구조를 증폭층으로 사용하는 애벌란체 포토다이오드의 구조에 있어서, n-형 InP기판(10)과, 상기 기판(10)상에 버퍼층으로 형성된 n+형 InP에피택셜층(11)과, 상기 에피택셜층(11)상에 형성된 n형 In1-xAlxAs층 (12)과, 상기 In1-xAlxAs층(12)보다 불순물 농도가 상대적으로 크게하여 상기 층(12)상에 형성된 n+형 In1-xAlxAs층(13)과, 상기 층(13)상에 형성된 In0.53Ga0.47AsIn1-xAlxAs의 초격자 구조를 갖는 증폭층(14)과, 상기 증폭층(14)상에 순차 형성된 P형 In1-xAlxAs층(15)(16)과, 상기 층(16)상에 형성된 In0.53Ga0.47As로 된 흡수층(17)과, 상기 흡수층(17)상에 순차 형성된 표면누설 전류량 감소용 p형 InP층(18)과 오믹접합용 In0.53Ga0.47As층(19)을 포함하는 구성을 특징으로 하는 애벌란체 포토다이오드의 구조.
  2. 제 1 항에 있어서, 상기 에피택셜층(11)은 두께가 약 3㎜이고, 불순물 농도가 약 1×1018㎝-3인 것을 특징으로하는 초격자 구조(superlattice)의 증폭층을 갖는 애벌란체 포토 다이오도(APD : Avalanche Photodiode).
  3. 제 1 항에 있어서, 상기 P형 In1-xAlxAs층(15)은 불순물 농도가 약 1×1018㎝|-3이고, 두께는 300Å~400Å인것을 특징으로하는 초격자구조(superlattice)의 증폭층을 갖는 애벌란체 포토다이오드(APD : Avalanche Photodiode).
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920025002A 1992-12-22 1992-12-22 초격자구조(superlattice)의 증폭층을 갖는 애벌란체 포토다이오드(APD:Avalanche Photodiode) KR960001467B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019920025002A KR960001467B1 (ko) 1992-12-22 1992-12-22 초격자구조(superlattice)의 증폭층을 갖는 애벌란체 포토다이오드(APD:Avalanche Photodiode)
US08/149,775 US5369292A (en) 1992-12-22 1993-11-10 Avalanche photodiode having a multiplication layer with superlattice
JP5318157A JP2695112B2 (ja) 1992-12-22 1993-12-17 超格子構造の増幅層を有するアバランシュフォトダイオード

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920025002A KR960001467B1 (ko) 1992-12-22 1992-12-22 초격자구조(superlattice)의 증폭층을 갖는 애벌란체 포토다이오드(APD:Avalanche Photodiode)

Publications (2)

Publication Number Publication Date
KR940016964A true KR940016964A (ko) 1994-07-25
KR960001467B1 KR960001467B1 (ko) 1996-01-30

Family

ID=19346190

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920025002A KR960001467B1 (ko) 1992-12-22 1992-12-22 초격자구조(superlattice)의 증폭층을 갖는 애벌란체 포토다이오드(APD:Avalanche Photodiode)

Country Status (3)

Country Link
US (1) US5369292A (ko)
JP (1) JP2695112B2 (ko)
KR (1) KR960001467B1 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09106946A (ja) * 1995-10-11 1997-04-22 Mitsubishi Electric Corp 半導体装置，及び半導体レーザ，並びに高電子移動度トランジスタ装置
US6074892A (en) 1996-05-07 2000-06-13 Ciena Corporation Semiconductor hetero-interface photodetector
US6359322B1 (en) * 1999-04-15 2002-03-19 Georgia Tech Research Corporation Avalanche photodiode having edge breakdown suppression
JP2001332759A (ja) 2000-03-16 2001-11-30 Matsushita Electric Ind Co Ltd アバランシェフォトダイオード
US7045833B2 (en) * 2000-09-29 2006-05-16 Board Of Regents, The University Of Texas System Avalanche photodiodes with an impact-ionization-engineered multiplication region
US6794631B2 (en) * 2002-06-07 2004-09-21 Corning Lasertron, Inc. Three-terminal avalanche photodiode
EP2200096B1 (en) * 2008-12-18 2019-09-18 Alcatel Lucent Avalanche photodiode
CN112968071B (zh) * 2021-04-15 2022-09-06 长春工业大学 一种雪崩二极管及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016474A (ja) * 1983-07-08 1985-01-28 Nec Corp ヘテロ多重接合型光検出器
JPH02119274A (ja) * 1988-10-28 1990-05-07 Fujitsu Ltd アバランシェフォトダイオード
JP2700492B2 (ja) * 1989-08-03 1998-01-21 日本電信電話株式会社 アバランシェフォトダイオード
JP2796601B2 (ja) * 1990-02-17 1998-09-10 日本電信電話株式会社 アバランシェフォトダイオード
JPH03248482A (ja) * 1990-02-26 1991-11-06 Nec Corp アバランシェ・フォトダイオード
JP2671569B2 (ja) * 1990-06-22 1997-10-29 日本電気株式会社 アバランシェフォトダイオード
JPH0493088A (ja) * 1990-08-09 1992-03-25 Nec Corp アバランシェフォトダイオード
JP2978572B2 (ja) * 1991-02-19 1999-11-15 日本電気株式会社 半導体受光素子
JP2877215B2 (ja) * 1991-03-11 1999-03-31 日本電信電話株式会社 アバランシェフォトダイオ―ド
DE69229369T2 (de) * 1991-03-28 2000-01-27 Nec Corp Halbleiterphotodetektor mit Lawinenmultiplikation
JPH0521829A (ja) * 1991-07-12 1993-01-29 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
US5369292A (en) 1994-11-29
JP2695112B2 (ja) 1997-12-24
KR960001467B1 (ko) 1996-01-30
JPH06244451A (ja) 1994-09-02

Similar Documents

Publication Publication Date Title
AU4854693A (en) Ohmic contact structure between platinum and silicon carbide
GB1514548A (en) Multi-layer semiconductor photovoltaic device
GB1531633A (en) Heterojunction photodetectors
KR850002178A (ko) 광검출 집적회로 소자
KR860006843A (ko) 전계효과 반도체장치
GB1236986A (en) Low bulk leakage current avalanche photo-diode
KR850008558A (ko) 애벌란시 광전 다이오우드의 제조방법 및 애벌란시 광전 다이오우드
KR940022713A (ko) 반도체장치 및 그 제조방법
KR920005395A (ko) 광전장치
KR940016964A (ko) 초격자구조(superlattice)의 증폭층을 갖는 애벌란체 포토다이오드(APD:Avalanche Photodiode)
KR100343814B1 (en) Photodetector using high electron mobility transistor
FR2371776A1 (fr) Structure semi-conductrice a heterojonctions
ES8104640A1 (es) Perfeccionamientos en detectores de ionizacion acumulativa
KR850005165A (ko) 반도체 장치
GB1152708A (en) Improvements in or relating to Semiconductor Devices.
KR950034771A (ko) 화합물 반도체 집적회로
KR910003781A (ko) 선택적으로 도핑된 헤테로 구조를 갖는 반도체 장치
US4833512A (en) Heterojunction photo-detector with transparent gate
EP1195864A3 (en) Semiconductor laser device
Wake et al. InGaAs/InP junction field-effect transistors with high transconductance made using metal organic vapor phase epitaxy
GB1215557A (en) A semiconductor photosensitive device
JPS6455878A (en) Photovoltaic type infrared-ray detector
GB2168527A (en) Photo-detector
KR970051989A (ko) 전력소자 기판구조
EP1130722A3 (en) Semiconductor laser device

Legal Events

Date Code Title Description
A201 Request for examination
N231 Notification of change of applicant
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20031231

Year of fee payment: 9

LAPS Lapse due to unpaid annual fee