KR950034771A - 화합물 반도체 집적회로 - Google Patents

화합물 반도체 집적회로 Download PDF

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Publication number
KR950034771A
KR950034771A KR1019950004674A KR19950004674A KR950034771A KR 950034771 A KR950034771 A KR 950034771A KR 1019950004674 A KR1019950004674 A KR 1019950004674A KR 19950004674 A KR19950004674 A KR 19950004674A KR 950034771 A KR950034771 A KR 950034771A
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South Korea
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integrated circuit
compound semiconductor
layer
semiconductor integrated
semi
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KR1019950004674A
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KR100329682B1 (ko
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오사무 가가야
히로유끼 다까자와
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가나이 쯔도무
가부시끼가이샤 히다찌세이사꾸쇼
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Element Separation (AREA)

Abstract

전계효과 트랜지스터를 사용한 화합물 반도체 집적회로에 관한 것으로써, 초고속 동작에 적합하게 하기 위해, 반절연성기판과 그 위에 마련된 전계효과 트랜지스터 사이에 반절연성기판측에서 차례로 산소를 불순물로써 첨가한 화합물 반도체로 이루어지는 고저항층 및 언도프 화합물 반도체층을 마련한다.
이러한 구성에 의해, 저주파진동이 억제되어 있어 초고속동작에 적합하다.
선택도 : 제1도

Description

화합물 반도체 집적회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 있어서의 화합물 반도체집적회로의 구조를 도시한 단면도.

Claims (12)

  1. 반절연성기판상에 깊은 도너준위를 형성하는 물질의 불순물로써 첨가한 고저항층, 언도프 반도체층 및 여러개의 전계효과 트랜지스터를 이 순서로 마련해서 이루어지는 화합물 반도체집적회로.
  2. 제1항에 있어서, 상기 반절연성기판과 상기 고저항층 사이에 언도프 버퍼층을 마련해서 이루어지는 화합물 반도체집적회로.
  3. 제1항에 있어서, 상기 언도프 반도체층과 상기 전계효과 트랜지스터 사이에 p형 불순물 반도체층이 형성되어 있는 화합물 반도체집적회로.
  4. 제2항에 있어서, 상기 언도프 반도체층과 상기 전계효과 트랜지스터 사이에 P형 불순물 반도체층이 형성되어 있는 화합물 반도체집적회로.
  5. 제1항에 있어서, 상기 전계효과 트랜지스터와 상기 반절연성 기판의 이면전극의 최대 전위차를 적어도 7V로 할때 상기 반절연성기판중의 최대전계강도가 200V/㎝미만인 화합물 반도체집적회로.
  6. 제2항에 있어서, 상기 전계효과 트랜지스터와 상기 반절연성 기판의 이면전극의 최대 전위차를 적어도 7V로 할때 상기 반절연성기판중의 최대전계강도가 200V/㎝미만인 화합물 반도체집적회로.
  7. 제1항에 있어서, 상기 반절연성기판이 GaAs로 이루어지고, 상기 깊은 도너준위를 형성하는 물질이 산소인 화합물 반도체집적회로.
  8. 제1항에 있어서, 상기 반절연성기판이 InP로 이루어지고, 상기 깊은 도너준위를 형성하는 물질이 산소인 화합물 반도체집적회로.
  9. GaAs로 이루어지는 반절연성기판상에 언도프 GaAs버퍼층, 깊은 도너준위를 형성하는 불순물로써 산소를 첨가한 GaAs또는 AlGaAs로 이루어지는 고저항층, 언도프 GaAs반도체층, P형 GaAs층 및 N형 GaAs층을 능동층으로 하는 여러개의 전계효과 트랜지스터를 이 순서로 마련해서 이루어지는 화합물 반도체집적회로.
  10. InP로 이루어지는 반절연성기판상에 언도프 InAlAs버퍼층, 깊은 도너준위를 형성하는 불순물로써 산소를 첨가한 InAlAs로 이루어지는 고저항층, 언도프 InAlAs반도체층, P형 InGaAs층 및 N형 InGaAs층을 능동층으로 하는 여러개의 전계효과 트랜지스터를 이 순서로 마련해서 이루어지는 화합물 반도체집적회로.
  11. 제2항에 있어서, 상기 깊은 도너준위를 형성하는 물질을 불순물로써 첨가한 고저항층이 상기 언도프 버퍼층에 산소의 이온주입을 실행하는 것에 의해서 형성되어 이루어지는 화합물 반도체집적회로.
  12. 제1항에 있어서, 상기 여러개의 전계효과 트랜지스터 사이에 상기 집적회로의 상기 기판측과 반대측의 표면부터 형성된 소자분리홈을 갖는 화합물 반도체집적회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950004674A 1994-03-17 1995-03-08 화합물반도체집적회로 KR100329682B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-046719 1994-03-17
JP6046719A JPH07263644A (ja) 1994-03-17 1994-03-17 化合物半導体集積回路

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KR950034771A true KR950034771A (ko) 1995-12-28
KR100329682B1 KR100329682B1 (ko) 2002-08-13

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JP2003051507A (ja) * 2001-08-07 2003-02-21 Nec Kagobutsu Device Kk Ｆｅｔ装置
JP2006295073A (ja) * 2005-04-14 2006-10-26 Mitsubishi Electric Corp 半導体装置およびその製造方法
US7808016B2 (en) * 2006-09-14 2010-10-05 Teledyne Licensing, Llc Heterogeneous integration of low noise amplifiers with power amplifiers or switches
US7820541B2 (en) * 2006-09-14 2010-10-26 Teledyne Licensing, Llc Process for forming low defect density heterojunctions
JP5264089B2 (ja) * 2006-12-07 2013-08-14 三星ディスプレイ株式會社 半導体要素、これを備えた有機発光ディスプレイ装置及び該半導体要素の製造方法
JP2009027081A (ja) * 2007-07-23 2009-02-05 Hitachi Cable Ltd 半導体集積回路装置及びこれを用いた半導体スイッチ装置
US7989842B2 (en) * 2009-02-27 2011-08-02 Teledyne Scientific & Imaging, Llc Method and apparatus for heterojunction barrier diode detector for ultrahigh sensitivity
WO2011135809A1 (ja) * 2010-04-30 2011-11-03 住友化学株式会社 半導体基板、半導体基板の製造方法、電子デバイス、および電子デバイスの製造方法
US11139290B2 (en) * 2018-09-28 2021-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage cascode HEMT device

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JP2884596B2 (ja) * 1988-05-24 1999-04-19 富士通株式会社 化合物半導体装置、および素子分離帯の製造方法
JPH0387044A (ja) * 1989-06-14 1991-04-11 Fujitsu Ltd 化合物半導体装置
US5276340A (en) * 1989-11-21 1994-01-04 Fujitsu Limited Semiconductor integrated circuit having a reduced side gate effect
US5172197A (en) * 1990-04-11 1992-12-15 Hughes Aircraft Company Hemt structure with passivated donor layer
JP3087370B2 (ja) * 1991-09-10 2000-09-11 株式会社日立製作所 高速論理回路
JPH05283517A (ja) * 1992-03-31 1993-10-29 Hitachi Ltd 半導体集積回路
JPH05283439A (ja) * 1992-04-06 1993-10-29 Hitachi Ltd 半導体装置
JP3092298B2 (ja) * 1992-03-30 2000-09-25 株式会社日立製作所 化合物半導体集積回路および光再生中継器

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US5739559A (en) 1998-04-14
KR100329682B1 (ko) 2002-08-13
JPH07263644A (ja) 1995-10-13

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