KR860006843A - 전계효과 반도체장치 - Google Patents

전계효과 반도체장치 Download PDF

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KR860006843A
KR860006843A KR1019860001428A KR860001428A KR860006843A KR 860006843 A KR860006843 A KR 860006843A KR 1019860001428 A KR1019860001428 A KR 1019860001428A KR 860001428 A KR860001428 A KR 860001428A KR 860006843 A KR860006843 A KR 860006843A
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South Korea
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layer
semiconductor device
type
field effect
doped
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KR1019860001428A
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KR890004959B1 (ko
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도모노리 이시가와
도모노리 이시가와 (외 2)
시게히꼬 사사
사또시 히야미주
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후지쓰가부시끼가이샤
야마모도 다꾸마
후지쓰가부시끼사이샤
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Publication of KR860006843A publication Critical patent/KR860006843A/ko
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Publication of KR890004959B1 publication Critical patent/KR890004959B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H01L29/365—Planar doping, e.g. atomic-plane doping, delta-doping

Abstract

내용 없음

Description

전계효과 반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 2DEG를 사용하는 전계효과 반도체 장치의 개략단면도. 제2도는 제1도의 반도체장치에서 AlAs의 분자비(X)를 나타내는 도면. 제3도는 원자평면(또는 n-형 AlGaAs층)과 GaAs 능동층간의 거리의 함수로서 종래의 HEMT에 대한 층구조와 본 발명에 의한 층구조의 2DEG 이동도, 박판전자농도 그리고 박판 저항율을 나타내는 도면.

Claims (8)

  1. 반절연 기판과, 상기 기판상에 형성된 i형 능동층과, 상기 능동층상의 제1의 i-형 박층, 원자평면 도우핑 방법에 의해 도우판트로서 도우프되는 상기 제1박층상에 형성되는 우물박층 그리고 상기 도우프된 우물박층상에 형성되는 제2의 i-형 박층을 포함하되, 이 층들이 양자우물을 형성하는 초격자 구조층과, 그리고 소오스, 드레인 및 게이트용 전극들을 포함하는 것이 특징인 2차원 전자가스를 이용하는 전계효과 반도체장치.
  2. 제1항에서, 상기 초격자 구조층은 상기 제1 및 제2 i-형 박층과 상기 도우프된 우물층으로 구성되며, 상기 장치는 상기 초격자 구조층상에 형성된 도우프된 층을 더 포함하는 것이 특징인 2차원 전자가스를 이용하는 전계효과 반도체 장치.
  3. 제1항에서, 상기 도우프된 우물박층은 적어도 하나의 도우판트 원자평면을 갖고있는 것이 특징인 2차원 전자가스를 이용하는 전계효과 반도체 장치.
  4. 제1항에서, 상기 초격자 구조층은 i-형 박층들과 우물박층들이 교대로 형성되는 복수양자 우물구조를 갖고 있으며, 상기 우물박층의 적어도 하나가 도우판트 원자평면으로 도우프되는 것이 특징인 2차원 전자가스를 이용하는 전계효과 반도체 장치.
  5. 제1항에서, 상기 반절연기판은 GaAs이며, 상기 i-형 능동층은 GaAs이고, 상기 제1 및 제2 i-형 박층들은 AlAs이고, 그리고 상기 도우프된 우물박층은 GaAs인 것이 특징인 2차원 전자가스를 이용하는 전계효과 반도체 장치.
  6. 제1항에서, 상기 반절연기판은 lnP이고, 상기 i-형 능동층은 lnGaAs이고, 상기 제1 및 제2 i-형 박층들이 InAlAs이고, 그리고 상기 도우프된 우물박층은 InGaAs인 것이 특징인 2차원 전자가스를 이용하는 전계효과 반도체 장치.
  7. 반절연 GaAs기판과, 상기 기판상에 형성된 i-형 GaAs 능동층과, 상기 능동층상의 제1 i-형 AlAs박층, 원자평면도우핑방법에 의해 도우판트로서 도우프되어 상기 제1 AlAs 박층상에 형성되는 GaAs 박층, 그리고 상기 도우프된 GaAs 박층상에 형성되는 제2의 i-형 AlAs 박층을 포함하되, 이 층들은 GaAs 양자우물을 형성하는 초격자 구조층과, 그리고 상기 초격자 구조층상에 형성되는 n-형 AlGaAs층을 포함하는 것이 특징인 2차원 전자가스를 이용하는 전계효과 반도체 장치.
  8. 제7항에서, 상기 AlxGa1-xAs층의 AlAs의 분자비(x)가 0.2인 것이 특징인 2차원 전자가스를 이용하는 전계효과 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860001428A 1985-02-28 1986-02-28 전계효과 반도체 장치 KR890004959B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP60-37433 1985-02-28
JP60037433A JPS61198784A (ja) 1985-02-28 1985-02-28 電界効果型半導体装置
JP37433 1985-02-28

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KR860006843A true KR860006843A (ko) 1986-09-15
KR890004959B1 KR890004959B1 (ko) 1989-12-02

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US (1) US4833508A (ko)
EP (1) EP0199435B1 (ko)
JP (1) JPS61198784A (ko)
KR (1) KR890004959B1 (ko)
DE (1) DE3682421D1 (ko)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216260A (en) * 1984-11-19 1993-06-01 Max-Planck Gesellschaft Zur Foerderung Der Wissenschaften E.V. Optically bistable semiconductor device with pairs of monoatomic layers separated by intrinsic layers
US4827320A (en) * 1986-09-19 1989-05-02 University Of Illinois Semiconductor device with strained InGaAs layer
JPS63316484A (ja) * 1987-06-19 1988-12-23 Fujitsu Ltd 量子効果半導体装置
DE3828885A1 (de) * 1988-08-26 1990-03-01 Mitsubishi Electric Corp Feldeffekttransistor
DE69031813T2 (de) * 1989-04-04 1998-04-09 Siemens Ag HEMT-Struktur
US5436470A (en) * 1991-01-14 1995-07-25 Sumitomo Electric Industries, Ltd. Field effect transistor
JP3173080B2 (ja) * 1991-12-05 2001-06-04 日本電気株式会社 電界効果トランジスタ
US5488237A (en) * 1992-02-14 1996-01-30 Sumitomo Electric Industries, Ltd. Semiconductor device with delta-doped layer in channel region
US5278444A (en) * 1992-02-26 1994-01-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Planar varactor frequency multiplier devices with blocking barrier
DE4216030A1 (de) * 1992-05-15 1993-11-18 Forschungszentrum Juelich Gmbh Elektronisches Bauelement mit wenigstens einem Stromkanal, der ein zweidimensionales Ladungsträgergas enthält
JP2914049B2 (ja) * 1992-10-27 1999-06-28 株式会社デンソー ヘテロ接合を有する化合物半導体基板およびそれを用いた電界効果トランジスタ
US5686737A (en) * 1994-09-16 1997-11-11 Cree Research, Inc. Self-aligned field-effect transistor for high frequency applications
JP3458349B2 (ja) * 1996-11-19 2003-10-20 株式会社デンソー 半導体装置
JP3429700B2 (ja) 1999-03-19 2003-07-22 富士通カンタムデバイス株式会社 高電子移動度トランジスタ
TWI222750B (en) * 2003-04-25 2004-10-21 Univ Nat Cheng Kung Voltage adjustable multi-stage extrinsic transconductance amplification HEMT
US20050104087A1 (en) * 2003-11-19 2005-05-19 Lan Ellen Y. InGaP pHEMT device for power amplifier operation over wide temperature range
FR2875337A1 (fr) * 2004-09-13 2006-03-17 Picogiga Internat Soc Par Acti Structures hemt piezoelectriques a desordre d'alliage nul
FR2875338B1 (fr) * 2004-09-13 2007-01-05 Picogiga Internat Soc Par Acti Methode d'elaboration de structures hemt piezoelectriques a desordre d'alliage nul
US7821030B2 (en) * 2005-03-02 2010-10-26 Panasonic Corporation Semiconductor device and method for manufacturing the same
US7253455B2 (en) * 2005-04-05 2007-08-07 Freescale Semiconductor, Inc. pHEMT with barrier optimized for low temperature operation
JP5762049B2 (ja) * 2011-02-28 2015-08-12 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4205329A (en) * 1976-03-29 1980-05-27 Bell Telephone Laboratories, Incorporated Periodic monolayer semiconductor structures grown by molecular beam epitaxy
US4194935A (en) * 1978-04-24 1980-03-25 Bell Telephone Laboratories, Incorporated Method of making high mobility multilayered heterojunction devices employing modulated doping
US4410902A (en) * 1981-03-23 1983-10-18 The United States Of America As Represented By The Secretary Of The Army Planar doped barrier semiconductor device
DE3480631D1 (de) * 1983-06-24 1990-01-04 Nec Corp Halbleiterstruktur mit uebergitter hoher traegerdichte.
US4882609A (en) * 1984-11-19 1989-11-21 Max-Planck Gesellschaft Zur Forderung Der Wissenschafter E.V. Semiconductor devices with at least one monoatomic layer of doping atoms
JPS61271874A (ja) * 1985-05-27 1986-12-02 Fujitsu Ltd 半導体装置
JPH0628273A (ja) * 1991-01-09 1994-02-04 Nec Corp 入力電文振分方式

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Publication number Publication date
DE3682421D1 (de) 1991-12-19
US4833508A (en) 1989-05-23
JPS61198784A (ja) 1986-09-03
JPH0156543B2 (ko) 1989-11-30
EP0199435B1 (en) 1991-11-13
EP0199435A3 (en) 1988-03-02
EP0199435A2 (en) 1986-10-29
KR890004959B1 (ko) 1989-12-02

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