JPS6455878A - Photovoltaic type infrared-ray detector - Google Patents
Photovoltaic type infrared-ray detectorInfo
- Publication number
- JPS6455878A JPS6455878A JP62213401A JP21340187A JPS6455878A JP S6455878 A JPS6455878 A JP S6455878A JP 62213401 A JP62213401 A JP 62213401A JP 21340187 A JP21340187 A JP 21340187A JP S6455878 A JPS6455878 A JP S6455878A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photodiode
- metal
- semiconductor
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To reduce a diffusing current and to decrease a dark current, by forming a semiconductor layer, which is to become a photodiode part, on an epitaxially grown substrate, through a half-metal semiconductor layer and a semi-insulating semiconductor layer. CONSTITUTION:An Hg0.9Cd0.1Te layer 2 can be regarded as a half-metal layer. The Hg0.9Cd0.1Te layer 2, a semi-insulating CdTe layer 3 and a p-type Hg0.8Cd0.2 Te layer 4 form a MIS (metal-insulator-semiconductor) structure. When a negative voltage is applied to a voltage applying electrode 9, i.e., the Hg0.9Cd0.1Te layer 2 with a p-side electrode showing a reference potential, the lower surface of the p-type Hg0.8Cd0.2Te layer 4 can be made to be an accumulated state. Namely, the same effect when a p<+> layer is formed on a surface on the opposite side of a part where a photodiode is formed is brought about. Since the photodiode substantially becomes an n<+>pp<+> junction, a diffusing current flowing through the diode is decreased. The device is operated as an infrared-ray detecting element having less dark current.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62213401A JPH0648732B2 (en) | 1987-08-26 | 1987-08-26 | Photovoltaic infrared detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62213401A JPH0648732B2 (en) | 1987-08-26 | 1987-08-26 | Photovoltaic infrared detector |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6455878A true JPS6455878A (en) | 1989-03-02 |
JPH0648732B2 JPH0648732B2 (en) | 1994-06-22 |
Family
ID=16638606
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62213401A Expired - Lifetime JPH0648732B2 (en) | 1987-08-26 | 1987-08-26 | Photovoltaic infrared detector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0648732B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5403760A (en) * | 1990-10-16 | 1995-04-04 | Texas Instruments Incorporated | Method of making a HgCdTe thin film transistor |
JPH08148705A (en) * | 1994-11-21 | 1996-06-07 | Nec Corp | Infrared detector |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7811673B2 (en) | 2003-12-12 | 2010-10-12 | Toyo Boseki Kabushiki Kaisha | High strength polyethylene fiber |
JP7132658B1 (en) * | 2021-12-22 | 2022-09-07 | 株式会社久保製作所 | air purifier |
-
1987
- 1987-08-26 JP JP62213401A patent/JPH0648732B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5403760A (en) * | 1990-10-16 | 1995-04-04 | Texas Instruments Incorporated | Method of making a HgCdTe thin film transistor |
JPH08148705A (en) * | 1994-11-21 | 1996-06-07 | Nec Corp | Infrared detector |
Also Published As
Publication number | Publication date |
---|---|
JPH0648732B2 (en) | 1994-06-22 |
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