JPS6455878A - Photovoltaic type infrared-ray detector - Google Patents

Photovoltaic type infrared-ray detector

Info

Publication number
JPS6455878A
JPS6455878A JP62213401A JP21340187A JPS6455878A JP S6455878 A JPS6455878 A JP S6455878A JP 62213401 A JP62213401 A JP 62213401A JP 21340187 A JP21340187 A JP 21340187A JP S6455878 A JPS6455878 A JP S6455878A
Authority
JP
Japan
Prior art keywords
layer
photodiode
metal
semiconductor
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62213401A
Other languages
Japanese (ja)
Other versions
JPH0648732B2 (en
Inventor
Yukihiko Maejima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62213401A priority Critical patent/JPH0648732B2/en
Publication of JPS6455878A publication Critical patent/JPS6455878A/en
Publication of JPH0648732B2 publication Critical patent/JPH0648732B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To reduce a diffusing current and to decrease a dark current, by forming a semiconductor layer, which is to become a photodiode part, on an epitaxially grown substrate, through a half-metal semiconductor layer and a semi-insulating semiconductor layer. CONSTITUTION:An Hg0.9Cd0.1Te layer 2 can be regarded as a half-metal layer. The Hg0.9Cd0.1Te layer 2, a semi-insulating CdTe layer 3 and a p-type Hg0.8Cd0.2 Te layer 4 form a MIS (metal-insulator-semiconductor) structure. When a negative voltage is applied to a voltage applying electrode 9, i.e., the Hg0.9Cd0.1Te layer 2 with a p-side electrode showing a reference potential, the lower surface of the p-type Hg0.8Cd0.2Te layer 4 can be made to be an accumulated state. Namely, the same effect when a p<+> layer is formed on a surface on the opposite side of a part where a photodiode is formed is brought about. Since the photodiode substantially becomes an n<+>pp<+> junction, a diffusing current flowing through the diode is decreased. The device is operated as an infrared-ray detecting element having less dark current.
JP62213401A 1987-08-26 1987-08-26 Photovoltaic infrared detector Expired - Lifetime JPH0648732B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62213401A JPH0648732B2 (en) 1987-08-26 1987-08-26 Photovoltaic infrared detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62213401A JPH0648732B2 (en) 1987-08-26 1987-08-26 Photovoltaic infrared detector

Publications (2)

Publication Number Publication Date
JPS6455878A true JPS6455878A (en) 1989-03-02
JPH0648732B2 JPH0648732B2 (en) 1994-06-22

Family

ID=16638606

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62213401A Expired - Lifetime JPH0648732B2 (en) 1987-08-26 1987-08-26 Photovoltaic infrared detector

Country Status (1)

Country Link
JP (1) JPH0648732B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5403760A (en) * 1990-10-16 1995-04-04 Texas Instruments Incorporated Method of making a HgCdTe thin film transistor
JPH08148705A (en) * 1994-11-21 1996-06-07 Nec Corp Infrared detector

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7811673B2 (en) 2003-12-12 2010-10-12 Toyo Boseki Kabushiki Kaisha High strength polyethylene fiber
JP7132658B1 (en) * 2021-12-22 2022-09-07 株式会社久保製作所 air purifier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5403760A (en) * 1990-10-16 1995-04-04 Texas Instruments Incorporated Method of making a HgCdTe thin film transistor
JPH08148705A (en) * 1994-11-21 1996-06-07 Nec Corp Infrared detector

Also Published As

Publication number Publication date
JPH0648732B2 (en) 1994-06-22

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