KR940022713A - 반도체장치 및 그 제조방법 - Google Patents

반도체장치 및 그 제조방법 Download PDF

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Publication number
KR940022713A
KR940022713A KR1019940006710A KR19940006710A KR940022713A KR 940022713 A KR940022713 A KR 940022713A KR 1019940006710 A KR1019940006710 A KR 1019940006710A KR 19940006710 A KR19940006710 A KR 19940006710A KR 940022713 A KR940022713 A KR 940022713A
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layer
semiconductor device
compound semiconductor
alloy
inp
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KR1019940006710A
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KR0132008B1 (ko
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마사히코 휴가지
레이지 오노
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사토 후미오
가부시키가이샤 도시바
신토 요시게이
도시바 전자 엔지니어링 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Light Receiving Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 전극접촉부의 오믹성과 박리강도의 향상, 공정의 간략화를 도모한다.
본 발명에 있어서, InP기판(1)상에는 InP버퍼층(2), InGaAs 광흡수층(3) 및 InP갭층(4)이 각각 형성된다. InP갭층(4)에는 p형 InP영역(5)이 형성된다. 이 p형 InP영역(5)에 접촉하는 적층전극은 Au(21)로 구성되는 제1층과, Ti(22) 등으로 구성되는 제2층, Pt(23) 등으로 구성되는 제3층 및 Au(24) 등으로 구성되는 제4층을 구비한다. 당해 적층전극의 제1층의 Au의 두께는 1∼500nm이다.

Description

반도체장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 한 실시예에 따른 반도체장치의 전극구조를 나타낸 단면도.
제2도는 본 발명의 전극구조를 표면입사형 수광소자에 적용한 경우의 단면도.
제3도는 본 발명의 전극구조를 플립칩형 수광소자에 적용한 경우의 단면도.

Claims (5)

  1. In과 P를 포함하는 III-V족 화합물 반도체와, 이 III-V족 화합물 반도체에 접촉하는 적층전극을 갖추고, 상기 적층전극은, 상기 III-V족 화합물 반도체에 접촉하며 Au 또는 Au를 주성분으로 하는 합금으로 구성되는 제1층과, 이 제1층상에 형성되며 Ti, Cr 혹은 W, 또는 이들중 어느것이든 하나이상의 원소를 주성분으로 하는 합금으로 구성되는 제2층, 이 제2층상에 형성되며 Pt, Rh, Pd, Ni, Ta 혹은 Mo, 또는 이들중 어느것이든 하나이상의 원소를 주성분으로 하는 합금으로 구성되는 제3층 및, 이 제3층상에 형성되며 Au, Al 혹은 Pb, 또는 이들중 어느것이든 하나이상의 원소를 주성분으로 하는 합금으로 구성되는 제4층을 구비한 것을 특징으로 하는 반도체장치.
  2. 제1항에 있어서, 상기 적층전극의 제1층의 층두께는 1[nm]이상, 500[nm] 이하인 것을 특징으로 하는 반도체장치.
  3. 제1항 또는 제2항에 있어서, 상기 III-V족 화합물 반도체는, p형 영역과 n형 영역을 포함하고, 당해 p형 영역의 III-V족 화합물 반도체상 및 당해 n형 영역의 III-V족 화합물 반도체상에 각각 상기 적층전극이 형성되어 있는 것을 특징으로 하는 반도체장치.
  4. In과 P를 포함하는 III-V족 화합물 반도체상에 도펀트를 포함하지 않는 Au로 구성되는 제1층을 형성하는 공정과, 상기 제1층상에 Ti, Cr 혹은 W, 또는 이들중 어느것이든 하나이상의 원소를 주성분으로 하는 합금으로 구성되는 제2층을 형성하는 공정, 상기 제2층상에 Pt, Rh, Pd, Ni, Ta 혹은 Mo, 또는 이들중 어느것이든 하나이상의 원소를 주성분으로 하는 합금으로 구성되는 제3층을 형성하는 공정 및, 상기 제3층상에 Au, Al 혹은 Pb, 또는 이들중 어느것이든 하나이상의 원소를 주성분으로 하는 합금으로 구성되는 제4층을 형성하는 공정을 포함하는 것을 특징으로 하는 반도체장치의 제조방법.
  5. 제4항에 있어서, 상기 제1층의 Au는, 당해 제1층을 형성한 후의 공정에 있어서, 상기 반도체의 In, P 혹은 도펀트, 또는 상기 제3층을 구성하는 원소와 반응하여 합금을 형성하는 것을 특징으로 하는 반도체장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940006710A 1993-03-31 1994-03-31 반도체장치 및 그 제조방법 KR0132008B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP93-73233 1993-03-31
JP05073233A JP3115148B2 (ja) 1993-03-31 1993-03-31 半導体装置の製造方法

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KR940022713A true KR940022713A (ko) 1994-10-21
KR0132008B1 KR0132008B1 (ko) 1998-04-14

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EP1179836A3 (en) * 2000-08-11 2003-05-28 Agere Systems Optoelectronics Guardian Corporation A contact for indium semiconductor devices incorporating gold solders
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JP5011607B2 (ja) * 2001-04-16 2012-08-29 住友電気工業株式会社 受光素子
KR100454230B1 (ko) * 2001-12-24 2004-10-26 광주과학기술원 유전체 특성이 개선된 ＩｎＧａＡｓ산화막의 형성방법
TWI272641B (en) * 2002-07-16 2007-02-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US6770919B2 (en) * 2002-12-30 2004-08-03 Xindium Technologies, Inc. Indium phosphide heterojunction bipolar transistor layer structure and method of making the same
EP1761960A4 (en) * 2004-06-24 2010-07-21 Showa Denko Kk REFLECTIVE POSITIVE ELECTRODE AND THIS USING LIGHT EMITTING SEMICONDUCTOR DEVICE FROM A GALLIUM NITRIDE COMPOUND
US7384826B2 (en) * 2004-06-29 2008-06-10 International Rectifier Corporation Method of forming ohmic contact to a semiconductor body
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KR100640661B1 (ko) * 2005-08-05 2006-11-01 삼성전자주식회사 ｐ형 광대역 밴드 갭 화합물 반도체층에의 저저항 접촉콘택을 가지는 반도체 소자 및 제조 방법
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JP2011253987A (ja) 2010-06-03 2011-12-15 Mitsubishi Electric Corp 半導体受光素子及び光モジュール
DE102019006099B4 (de) * 2019-08-29 2022-03-17 Azur Space Solar Power Gmbh Stapelförmige Mehrfachsolarzelle mit einer ein Mehrschichtsystem umfassenden Metallisierung
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Publication number Publication date
JPH06291079A (ja) 1994-10-18
KR0132008B1 (ko) 1998-04-14
US5412249A (en) 1995-05-02
JP3115148B2 (ja) 2000-12-04

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