KR950021299A - 화합물 반도체장치 - Google Patents

화합물 반도체장치 Download PDF

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Publication number
KR950021299A
KR950021299A KR1019940037328A KR19940037328A KR950021299A KR 950021299 A KR950021299 A KR 950021299A KR 1019940037328 A KR1019940037328 A KR 1019940037328A KR 19940037328 A KR19940037328 A KR 19940037328A KR 950021299 A KR950021299 A KR 950021299A
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South Korea
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electrode
layer
semiconductor device
compound semiconductor
electrode pad
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KR1019940037328A
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English (en)
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KR0184025B1 (ko
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마사히코 휴가지
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사토 후미오
가부시키가이샤 도시바(Kabushiki Kaisha Toshiba)
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Publication of KR950021299A publication Critical patent/KR950021299A/ko
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Publication of KR0184025B1 publication Critical patent/KR0184025B1/ko

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Abstract

본 발명은, 장치의 신뢰성의 저하를 방지함과 동시에 마운트부재에 소자를 마운트 한 후의 소자의 박리강도를 크게 한다.
N+-InP기판(21)상에 N-InP버퍼층(22)을 퇴적하고, 버퍼층(22)상에 InGaAs광흡수층(23)을 퇴적하며, 광흡수층(23)상에 N-InP캡층(24)을 퇴적하고, 광흡수층(23)과, 캡층(24)내에 P형 불순물영역(25)을 형성한다. 다음, 캡층(24)상에 마스크를 형성하고, 마스크막을 마스크로서 캡층(24)과, 광흡수층(23)및, 버퍼층(22)을 에칭제거하며, P전극 형성영역(27)과 N전극 형성영역(28)을 형성한다. 다음, 캡층(24)의 P형 불순물영역(25)의 주변부상에 절연막(29)를 설치하고, P전극 형성영역(27), N전극 형성영역(28) 각각의 위에 적층도랑으로 이루어지는 전극패드(33,34)를 형성하고, 절연막(29)의 위, P전극의 전극패드(33)의 표면의 주위와 측면의 비금속물질(35)을 형성한다. 따라서, 장치의 신뢰성의 저하를 방지할 수 있다.

Description

화합물 반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 따른 이면입사 플립치형 반도체 수광소자를 도시한 단면도이다.
제2도는 본 발명의 제2실시예에 의한 이면입사 플립칩형 반도체 수광소자를 도시한 단면도이다.

Claims (8)

  1. 반도체 기판의 위에 전극이 설치된 반도체 칩과, 상기 전극의 위에 설치된 전극패드, 상기 전극패드의 표면의 주위 및 측면에 설치된 비금속물질 및, 상기 반도체칩을 상기 전극패드의 상면을 접합면으로 땜납을 매개로 마운트 하는 마운트부재를 구비하여 이루어진 것을 특징으로 하는 화합물 반도체장치.
  2. 제1항에 있어서, 상기 전극의 표면상에 설치된 땜납돌기를 더 구비한 것을 특징으로 하는 화합물 반도체장치.
  3. 제1항 또는 제2항에 있어서, 상기 비금속물질은 산화실리콘과, 질화 실리콘 및, 폴리이미드로 이루어진 것을 특징으로 하는 화합물 반도체장치.
  4. 제1항 또는 제2항에 있어서, 상기 전극패드는 적어도 Ni와,Pd,Rh및,Ti중 하나로 이루어진 금속층을 갖춘 것을 특징으로 하는 화합물 반도체장치.
  5. 제1항 또는 제2항에 있어서, 상기 전극패드는 단층 또는 복수의 금속층으로 이루어진 것을 특징으로 하는 화합물 반도체장치.
  6. 제1항에 있어서, 상기 땜납은 적어도 Au와,Sn,Pb및,In중의 하나를 주성분으로 하는 것을 특징으로 하는 화합물 반도체장치.
  7. 제2항에 있어서, 상기 땜납돌기는 적어도 Au와,Sn,Pb및,In중의 하나를 주성분으로 하는 것을 특징으로 하는 화합물 반도체장치.
  8. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940037328A 1993-12-27 1994-12-27 화합물 반도체장치 KR0184025B1 (ko)

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JP5347237A JP3054021B2 (ja) 1993-12-27 1993-12-27 化合物半導体装置
JP93-347237 1993-12-27

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EP0660403B1 (en) 1999-06-16
JPH07193070A (ja) 1995-07-28
JP3054021B2 (ja) 2000-06-19
EP0660403A1 (en) 1995-06-28
KR0184025B1 (ko) 1999-04-15

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