KR910002013A - 양자-웰 방사 검출기 장치 - Google Patents

양자-웰 방사 검출기 장치 Download PDF

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KR910002013A
KR910002013A KR1019890007684A KR890007684A KR910002013A KR 910002013 A KR910002013 A KR 910002013A KR 1019890007684 A KR1019890007684 A KR 1019890007684A KR 890007684 A KR890007684 A KR 890007684A KR 910002013 A KR910002013 A KR 910002013A
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quantum
well
radiation detector
detector device
layer
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KR1019890007684A
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KR920009918B1 (ko
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조지 베세아 클라이드
프랭클린 레빈 베리
죤 매릭 로져
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엘리 와이스
아메리칸 텔리폰 앤드 텔레그라프 캄파니
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    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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    • H01L27/144—Devices controlled by radiation
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    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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Abstract

내용 없음

Description

양자-웰 방사 검출기 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 본 발명의 제1 제시된 실시예에 따른 방사 검출기의 개략 측면도,
제 2도는 전기적으로 바이어스되고 반도체 헤테로 구조체를 사용하는 것이 수행된 바와 같이 제1도의 방사 검출기에 대응하는 것과 같은 개략 에너지대 다이아그램도,
제 3도는 전기적으로 바이어스 되고 양자가 도프된 영역으로 잘 형성되어 있는 반도체 호모 구조를 사용하는 것이 수행된 바와 같이 제1도의 방사 검출기에 대응하는 것과 같은 개략 에너지대 다이아그램도,

Claims (10)

  1. 흥미있는 파장에서의 입사 전자 방사에 응답하는 전기 효과를 생성하는 검출기는, 접촉층(예컨대 12,14)간의 기판 지지 반도체 초격자(예컨대 13)를 구비하며, 상기 초격자(예컨대 13)는 층간 삽입지된 양자 웰(예컨대 21)과 장벽(예컨대 22)층을 구비하며, 상기 층으로 형성된 양자 웰은 가전자대 속박 에너지 상태(예컨대 24)를 가지며, 상기 양자 웰은 상기 방사에 의해 캐리어 여기용으로 적합하게 되어 있으며, 여기는 가전자대 속박 에너지 상태에서 가전자대 연속 에너지 상태이거나 그렇지 않으면 상기 전도대 속박 에너지 상태로부터 전도대 연속 에너지 상태중인 것을 구비하는 양자-웰 방사 검출기 장치에 있어서, 상기 장벽(예컨대 22)층의 두께는 상기 양자 웰(예컨대 21)층의 두께보다 암시적으로 훨씬 두꺼운 것을 특징으로 하는 양자-웰 방사 검출기 장치.
  2. 제1항에 있어서,상기 장벽층의 두께는 상기 양자 웰층 두께의 3배보다 훨씬 두껍거나 같은 것을 특징으로 하는 양자-웰 방사 검출기 장치.
  3. 제1항에 있어서,상기 파장은 3㎛보다 훨씬 길거나 같은 것을 특징으로 하는 양자-웰 방사 검출기 장치.
  4. 제3항에 있어서,상기 파장은 3 내지 15㎛범위인 것을 것을 특징으로 하는 양자-웰 방사 검출기 장치.
  5. 제1항에 있어서,상기 초격자는 상이한 재료의 층간 삽입지된 층을 구비하는 것을 특징으로 하는 양자-웰 방사 검출기 장치.
  6. 제5항에 있어서,상기 초격자는 그룹IV반도체 재료를 구비하고 상기 양자 웰 층은 p-도프된 것을 특징으로 하는 양자-웰 방사 검출기 장치.
  7. 제6항에 있어서,상기 검출기는 실리콘 반도체 소자로 모놀리스적으로 집적된 것을 특징으로 하는 양자-웰 방사 검출기 장치.
  8. 제5항에 있어서, 상기 초격자는 그룹IIIV반도체 재료를 구비하고, 상기 양자 웰 층은 n-도프된 것을 특징으로 하는 양자-웰 방사 검출기 장치.
  9. 제8항에 있어서, 상기 검출기는 칼륨 비소화 반도체 소자로 모놀리스적으로 집적된 것을 특징으로 하는 양자-웰 방사 검출기 장치.
  10. 제1항에 있어서, 상기 장치는 흥미있는 상이한 파장에 대응하는 것처럼 상기 검출기를 구비하는 스텍을 형성한 다수의 검출기를 구비하는 것을 특징으로 하는 양자-웰 방사 검출기 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890007684A 1988-06-06 1989-06-05 양자-웰 방사선 검출 소자 KR920009918B1 (ko)

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US20286088A 1988-06-06 1988-06-06
US202860 1988-06-06

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KR920009918B1 KR920009918B1 (ko) 1992-11-06

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EP (1) EP0345972B1 (ko)
JP (1) JPH0766980B2 (ko)
KR (1) KR920009918B1 (ko)
CA (1) CA1314614C (ko)
DE (1) DE68916867T2 (ko)
ES (1) ES2056218T3 (ko)

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FR2671882B1 (fr) * 1989-12-28 1993-05-28 France Etat Dispositif de conversion d'un rayonnement infrarouge en un autre rayonnement d'energie superieure a celle de ce rayonnement infrarouge.
WO1992008250A1 (en) * 1990-10-31 1992-05-14 Martin Marietta Corporation Miniband transport quantum well infrared detector
JP2797738B2 (ja) * 1991-03-15 1998-09-17 富士通株式会社 赤外線検知装置
US5272356A (en) * 1991-11-12 1993-12-21 Hughes Aircraft Company Multiple quantum well photodetector for normal incident radiation
US5223704A (en) * 1992-03-31 1993-06-29 At&T Bell Laboratories Planar buried quantum well photodetector
FR2724768B1 (fr) * 1994-09-16 1997-01-24 Sgs Thomson Microelectronics Groupement en serie de thyristors photosensibles
US5539206A (en) * 1995-04-20 1996-07-23 Loral Vought Systems Corporation Enhanced quantum well infrared photodetector
FR2756666B1 (fr) * 1996-12-04 1999-02-19 Thomson Csf Detecteur d'ondes electromagnetiques
FR2756667B1 (fr) * 1996-12-04 1999-02-19 Thomson Csf Detecteur d'ondes electromagnetiques bispectral
US6054718A (en) * 1998-03-31 2000-04-25 Lockheed Martin Corporation Quantum well infrared photocathode having negative electron affinity surface
JP4029420B2 (ja) * 1999-07-15 2008-01-09 独立行政法人科学技術振興機構 ミリ波・遠赤外光検出器
JP4330210B2 (ja) 1999-07-30 2009-09-16 富士通株式会社 光半導体装置及びその製造方法
JP2001044453A (ja) 1999-07-30 2001-02-16 Fujitsu Ltd 光検出素子

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US4688068A (en) * 1983-07-08 1987-08-18 The United States Of America As Represented By The Department Of Energy Quantum well multijunction photovoltaic cell
US4679061A (en) * 1985-06-14 1987-07-07 American Telephone And Telegraph Company, At&T Bell Laboratories Superlattice photoconductor
CA1282671C (en) * 1985-11-18 1991-04-09 John Condon Bean Device having strain induced region
US4711857A (en) * 1986-08-28 1987-12-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Tailorable infrared sensing device with strain layer superlattice structure

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KR920009918B1 (ko) 1992-11-06
EP0345972B1 (en) 1994-07-20
DE68916867T2 (de) 1994-12-22
CA1314614C (en) 1993-03-16
EP0345972A1 (en) 1989-12-13
DE68916867D1 (de) 1994-08-25
ES2056218T3 (es) 1994-10-01
JPH0766980B2 (ja) 1995-07-19
JPH0243777A (ja) 1990-02-14

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