ES2056218T3 - Detector de radiacion de cavidad cuantica. - Google Patents
Detector de radiacion de cavidad cuantica.Info
- Publication number
- ES2056218T3 ES2056218T3 ES89305313T ES89305313T ES2056218T3 ES 2056218 T3 ES2056218 T3 ES 2056218T3 ES 89305313 T ES89305313 T ES 89305313T ES 89305313 T ES89305313 T ES 89305313T ES 2056218 T3 ES2056218 T3 ES 2056218T3
- Authority
- ES
- Spain
- Prior art keywords
- quantic
- radiation detector
- cavity radiation
- infrared
- south
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005855 radiation Effects 0.000 title abstract 2
- 230000005670 electromagnetic radiation Effects 0.000 abstract 1
- 230000004438 eyesight Effects 0.000 abstract 1
- ZEKANFGSDXODPD-UHFFFAOYSA-N glyphosate-isopropylammonium Chemical compound CC(C)N.OC(=O)CNCP(O)(O)=O ZEKANFGSDXODPD-UHFFFAOYSA-N 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
- H01L25/043—Stacked arrangements of devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14868—CCD or CID colour imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14875—Infrared CCD or CID imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Measurement Of Radiation (AREA)
Abstract
RADIACION ELECTROMAGNETICA COMO, EN PARTICULAR, RADIACION INFRARROJA ES DETECTADA OPTO - ELECTRONICAMENTE MEDIANTE MECANISMOS DE ESTRUCTURA SUPERENREJADA FORMANDO FUENTES CUANTICAS (21) QUE TIENEN UN ESTADO FRONTERA UNICA (24) CON EL FIN DE MINIMIZAR LA CORRIENTE OSCURA, BARRERAS RELATIVAMENTE ANCHAS (22) SON USADAS ENTRE LAS FUENTES CUANTICAS. LOS DETECTORES DE ALTA VELOCIDAD, ALTAMENTE SENSITIVOS, RESULTANTES PUEDEN SER USADOS EN COMUNICACIONES OPTICAS, PARA LEVANTAMIENTO DE PLANOS DE TERRENO Y PARA VISION INFRARROJA.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US20286088A | 1988-06-06 | 1988-06-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2056218T3 true ES2056218T3 (es) | 1994-10-01 |
Family
ID=22751541
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES89305313T Expired - Lifetime ES2056218T3 (es) | 1988-06-06 | 1989-05-25 | Detector de radiacion de cavidad cuantica. |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0345972B1 (es) |
JP (1) | JPH0766980B2 (es) |
KR (1) | KR920009918B1 (es) |
CA (1) | CA1314614C (es) |
DE (1) | DE68916867T2 (es) |
ES (1) | ES2056218T3 (es) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2671882B1 (fr) * | 1989-12-28 | 1993-05-28 | France Etat | Dispositif de conversion d'un rayonnement infrarouge en un autre rayonnement d'energie superieure a celle de ce rayonnement infrarouge. |
AU9030791A (en) * | 1990-10-31 | 1992-05-26 | Martin Marietta Corporation | Miniband transport quantum well infrared detector |
JP2797738B2 (ja) * | 1991-03-15 | 1998-09-17 | 富士通株式会社 | 赤外線検知装置 |
US5272356A (en) * | 1991-11-12 | 1993-12-21 | Hughes Aircraft Company | Multiple quantum well photodetector for normal incident radiation |
US5223704A (en) * | 1992-03-31 | 1993-06-29 | At&T Bell Laboratories | Planar buried quantum well photodetector |
FR2724768B1 (fr) * | 1994-09-16 | 1997-01-24 | Sgs Thomson Microelectronics | Groupement en serie de thyristors photosensibles |
US5539206A (en) * | 1995-04-20 | 1996-07-23 | Loral Vought Systems Corporation | Enhanced quantum well infrared photodetector |
FR2756667B1 (fr) * | 1996-12-04 | 1999-02-19 | Thomson Csf | Detecteur d'ondes electromagnetiques bispectral |
FR2756666B1 (fr) * | 1996-12-04 | 1999-02-19 | Thomson Csf | Detecteur d'ondes electromagnetiques |
US6054718A (en) * | 1998-03-31 | 2000-04-25 | Lockheed Martin Corporation | Quantum well infrared photocathode having negative electron affinity surface |
JP4029420B2 (ja) * | 1999-07-15 | 2008-01-09 | 独立行政法人科学技術振興機構 | ミリ波・遠赤外光検出器 |
JP2001044453A (ja) | 1999-07-30 | 2001-02-16 | Fujitsu Ltd | 光検出素子 |
JP4330210B2 (ja) | 1999-07-30 | 2009-09-16 | 富士通株式会社 | 光半導体装置及びその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4688068A (en) * | 1983-07-08 | 1987-08-18 | The United States Of America As Represented By The Department Of Energy | Quantum well multijunction photovoltaic cell |
US4679061A (en) * | 1985-06-14 | 1987-07-07 | American Telephone And Telegraph Company, At&T Bell Laboratories | Superlattice photoconductor |
CA1282671C (en) * | 1985-11-18 | 1991-04-09 | John Condon Bean | Device having strain induced region |
US4711857A (en) * | 1986-08-28 | 1987-12-08 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Tailorable infrared sensing device with strain layer superlattice structure |
-
1989
- 1989-05-17 CA CA000599886A patent/CA1314614C/en not_active Expired - Fee Related
- 1989-05-25 ES ES89305313T patent/ES2056218T3/es not_active Expired - Lifetime
- 1989-05-25 DE DE68916867T patent/DE68916867T2/de not_active Expired - Fee Related
- 1989-05-25 EP EP89305313A patent/EP0345972B1/en not_active Expired - Lifetime
- 1989-06-05 KR KR1019890007684A patent/KR920009918B1/ko not_active IP Right Cessation
- 1989-06-06 JP JP1145036A patent/JPH0766980B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE68916867D1 (de) | 1994-08-25 |
JPH0243777A (ja) | 1990-02-14 |
EP0345972A1 (en) | 1989-12-13 |
EP0345972B1 (en) | 1994-07-20 |
JPH0766980B2 (ja) | 1995-07-19 |
CA1314614C (en) | 1993-03-16 |
DE68916867T2 (de) | 1994-12-22 |
KR910002013A (ko) | 1991-01-31 |
KR920009918B1 (ko) | 1992-11-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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